ADR3512WCRMZ-R7 [ADI]
Micropower, High Accuracy Voltage Reference ;
| 型号： | ADR3512WCRMZ-R7 |
| 厂家： | 
ADI |
| 描述： | Micropower, High Accuracy Voltage Reference 光电二极管 |
| 文件： | 总17页 (文件大小：849K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Micropower, High Accuracy
Voltage Reference
Data Sheet
ADR3512
FEATURES
PIN CONFIGURATION
ENABLE
GND SENSE
GND FORCE
DNC
1
2
3
4
8
7
6
5
V
V
V
Maximum temperature coefficient
4 ppm/°C (C grade, −40°C to +85°C)
IN
ADR3512
SENSE
FORCE
OUT
OUT
TOP VIEW
(Not to Scale)
Low long-term drift (LTD): 30 ppm (initial 1 khr typical)
Initial output voltage error: 0.1% (maximum)
Operating temperature range: −40°C to +125°C
Output current: +10 mA source/−3 mA sink
Low quiescent current: 100 µA (maximum)
Low dropout voltage: 1.15 V at 2 mA
DNC
NOTES
1. DNC = DO NOT CONNECT. DO NOT CONNECT TO THIS PIN.
Figure 1. 8-Lead MSOP (RM-8 Suffix)
Output voltage noise (0.1 Hz to 10 Hz): 8 µV p-p (typical)
Qualified for automotive applications
APPLICATIONS
Automotive battery monitors
Portable instrumentation
Process transmitters
Remote sensors
Medical instrumentation
GENERAL DESCRIPTION
The ADR3512 is a low cost, low power, high precision CMOS
voltage reference, featuring a maximum temperature coefficient
(TC) of 4 ppm/°C (C grade, −40°C to +85°C), low operating
current, and low output noise in an 8-lead MSOP package. For
high accuracy, the output voltage and temperature coefficient
are trimmed digitally during final assembly using the Analog
Devices, Inc., patented DigiTrim® technology.1
The low output voltage hysteresis and low long-term output voltage
drift improve lifetime system accuracy.
This CMOS reference is specified over the automotive temperature
range of −40°C to +125°C.
Table 1. Selection Guide
Output
Voltage (V)
Input Voltage
Range (V)
Model
ADR3512WCRMZ-R7
1.200
2.3 to 5.5
1 At least U.S. Patent No. 6,696,894 covers this technology.
Rev. E
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Data Sheet
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ADR3512
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Long-Term Output Voltage Drift............................................. 13
Power Dissipation....................................................................... 13
Applications Information .............................................................. 14
Basic Voltage Reference Connection....................................... 14
Input and Output Capacitors.................................................... 14
4-Wire Kelvin Connections ...................................................... 14
VIN Slew Rate Considerations................................................... 14
Shutdown/Enable Feature ......................................................... 14
Sample Applications................................................................... 15
Outline Dimensions ....................................................................... 16
Ordering Guide .......................................................................... 16
Automotive Products................................................................. 16
Applications....................................................................................... 1
Pin Configuration............................................................................. 1
General Description......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Electrical Characteristics............................................................. 3
Absolute Maximum Ratings............................................................ 4
Thermal Resistance ...................................................................... 4
ESD Caution.................................................................................. 4
Pin Configuration and Function Descriptions............................. 5
Typical Performance Characteristics ............................................. 6
Terminology .................................................................................... 12
Theory of Operation ...................................................................... 13
REVISION HISTORY
11/15—Rev. D to Rev. E
Change to Figure 39 ....................................................................... 15
8/15—Revision D: Initial Version
Rev. E | Page 2 of 16
Data Sheet
ADR3512
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VIN = 2.3 V to 5.5 V, IL = 0 mA, TA = 25°C, unless otherwise noted.
Table 2.
Parameter
Symbol
VOUT
Test Conditions/Comments
Min
Typ
Max
Unit
OUTPUT VOLTAGE
1.1988
1.2000 1.2012
V
INITIAL OUTPUT VOLTAGE ERROR
VOERR
0.1
1.2
%
mV
TEMPERATURE COEFFICIENT1
LINE REGULATION1
TCVOUT
−40°C ≤ TA ≤ +85°C
−40°C ≤ TA ≤ +125°C
2.5
2.8
5
4
8
ppm/°C
ppm/°C
ppm/V
ppm/V
ΔVOUT/ΔVIN VIN = 2.7 V to 5.5 V
VIN = 2.7 V to 5.5 V, −40°C ≤ TA ≤ +125°C
50
160
LOAD REGULATION1
Sourcing
ΔVOUT/ΔIL
IL = 0 mA to 10 mA, VIN = 3.0 V,
−40°C ≤ TA ≤ +125°C
IL = 0 mA to −3 mA, VIN = 3.0 V,
−40°C ≤ TA ≤ +125°C
14
7
30
50
ppm/mA
ppm/mA
Sinking
OUTPUT CURRENT CAPACITY
Sourcing
Sinking
IL
VIN = 3.0 V to 5.5 V
VIN = 3.0 V to 5.5 V
10
−3
mA
mA
QUIESCENT CURRENT
Normal Operation
IQ
ENABLE ≥ VIN × 0.85
ENABLE = VIN, −40°C ≤ TA ≤ +125°C
ENABLE ≤ 0.7 V
85
100
5
µA
µA
µA
V
Shutdown
DROPOUT VOLTAGE2
VDO
IL = 0 mA, TA = −40°C ≤ TA ≤ +125°C
IL = 2 mA, TA = −40°C ≤ TA ≤ +125°C
1
1
1.1
1.15
V
ENABLE PIN
Shutdown Voltage
ENABLE Voltage
ENABLE Pin Leakage Current
OUTPUT VOLTAGE NOISE
VL
VH
IEN
0
0.7
VIN
3
V
V
µA
VIN × 0.85
ENABLE = VIN, TA = −40°C ≤ TA ≤ +125°C
f = 0.1 Hz to 10 Hz
f = 10 Hz to 10 kHz
1
en p-p
8
µV p-p
µV rms
µV/√Hz
ppm
dB
28
0.6
70
−60
30
100
OUTPUT VOLTAGE NOISE DENSITY
OUTPUT VOLTAGE HYSTERESIS3
RIPPLE REJECTION RATIO
en
f = 1 kHz
ΔVOUT_HYS
RRR
TA = +25°C to −40°C to +125°C to +25°C
fIN = 60 Hz
LONG-TERM OUTPUT VOLTAGE DRIFT1 ΔVOUT_LTD
1000 hours at 50°C
ppm
µs
TURN-ON SETTLING TIME
tR
CIN = 0.1 µF, CL = 0.1 µF, RL = 1 kΩ
1 See the Terminology section.
2 Dropout voltage refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Terminology section.
3 See the Terminology section. The device is placed through the temperature cycle in the order of the temperatures shown.
Rev. E | Page 3 of 16
ADR3512
Data Sheet
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
Table 3.
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Parameter
Rating
Supply Voltage
6 V
ENABLE to GND SENSE Voltage
Operating Temperature Range
Storage Temperature Range
Junction Temperature Range
VIN
Table 4. Thermal Resistance
Package Type
−40°C to +125°C
−65°C to +150°C
−65°C to +150°C
θJA
θJC
Unit
8-Lead MSOP (RM-8 Suffix)
132.5
43.9
°C/W
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
Rev. E | Page 4 of 16
Data Sheet
ADR3512
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
ENABLE
GND SENSE
GND FORCE
DNC
1
2
3
4
8
7
6
5
V
V
V
IN
ADR3512
SENSE
FORCE
OUT
OUT
TOP VIEW
(Not to Scale)
DNC
NOTES
1. DNC = DO NOT CONNECT. DO NOT CONNECT TO THIS PIN.
Figure 2. Pin Configuration
Table 5. Pin Function Descriptions
Pin No. Mnemonic Description
Enable Connection. This pin enables or disables the device.
1
2
3
4
5
6
7
8
ENABLE
GND SENSE
GND FORCE
DNC
Ground Voltage Sense Connection. Connect this pin directly to the point of the lowest potential in the application.
Ground Force Connection.
Do Not Connect. Do not connect to this pin.
Do Not Connect. Do not connect to this pin.
Reference Voltage Output.
DNC
VOUT FORCE
VOUT SENSE
VIN
Reference Voltage Output Sensing Connection. Connect this pin directly to the voltage input of the load devices.
Input Voltage Connection.
Rev. E | Page 5 of 16
ADR3512
Data Sheet
TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25°C, unless otherwise noted.
2.5010
5.0025
5.0020
5.0015
5.0010
5.0005
5.0000
4.9995
4.9990
4.9985
4.9980
4.9975
V
= 5.5V
V
= 5.5V
IN
IN
2.5008
2.5006
2.5004
2.5002
2.5000
2.4998
2.4996
2.4994
2.4992
2.4990
–40 –25 –10
5
20
35
50
65
80
95 110 125
–40 –25 –10
5
20
35
50
65
80
95 110 125
TEMPERATURE (ºC)
TEMPERATURE (ºC)
Figure 3. ADR3525 Output Voltage vs. Temperature
Figure 6. ADR3550 Output Voltage vs. Temperature
45
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
0
0
0
1
2
3
4
5
6
7
8
9
10
11
0
1
2
3
4
5
6
7
8
9
10
11
TEMPERATURE COEFFICIENT (ppm/°C)
TEMPERATURE COEFFICIENT (ppm/°C)
Figure 4. ADR3525 Temperature Coefficient Distribution
Figure 7. ADR3550 Temperature Coefficient Distribution
24
22
20
18
16
14
12
10
8
35
30
25
20
15
10
5
ADR3525
ADR3530
ADR3533
ADR3540
ADR3550
ADR3525
ADR3530
ADR3533
ADR3540
ADR3550
I
= 0mA TO 10mA
I
= 0mA TO –3mA
L
L
SOURCING
SINKING
6
4
2
0
–40 –25 –10
5
20
35
50
65
80
95 110 125
–40 –25 –10
5
20
35
50
65
80
95 110 125
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 5. Load Regulation vs. Temperature (Sourcing)
Figure 8. Load Regulation vs. Temperature (Sinking)
Rev. E | Page 6 of 16
Data Sheet
ADR3512
400
–40°C
+25°C
350
+125°C
300
250
200
150
100
50
1
10µV/DIV
TIME = 1s/DIV
CH1 RMS = 3.14µV
0
CH1 pk-pk = 18µV
–3 –2 –1
0
1
2
3
4
5
6
7
8
9
10
LOAD CURRENT (mA)
Figure 12. ADR3525 Output Voltage Noise (0.1 Hz to 10 Hz)
Figure 9. ADR3525 Dropout Voltage vs. Load Current
350
300
250
200
150
100
50
–40°C
+25°C
+125°C
1
100µV/DIV
TIME = 1s/DIV
0
CH1 pk-pk = 300µV
CH1 RMS = 42.0µV
–3 –2 –1
0
1
2
3
4
5
6
7
8
9
10
LOAD CURRENT (mA)
Figure 13. ADR3525 Output Voltage Noise (10 Hz to 10 kHz)
Figure 10. ADR3550 Dropout Voltage vs. Load Current
12
140
120
100
80
ADR3525
ADR3530
ADR3533
ADR3540
ADR3550
10
8
6
60
4
40
2
20
0
0
–40 –25 –10
5
20
35
50
65
80
95 110 125
0.1
1
10
100
1k
10k
FREQUENCY (Hz)
TEMPERATURE (°C)
Figure 11. Line Regulation vs. Temperature
Figure 14. ADR3525 Output Noise Spectral Density
Rev. E | Page 7 of 16
ADR3512
Data Sheet
0
C
C
= 1.1µF
L
= 0.1µF
IN
–10
–20
–30
–40
–50
–60
–70
–80
1
10µV/DIV
–90
CH1 pk-pk = 33.4µV
CH1 RMS = 5.68µV
10
100
1k
10k
100k
FREQUENCY (Hz)
Figure 15. ADR3525 Ripple Rejection Ratio vs. Frequency
Figure 18. ADR3550 Output Voltage Noise (0.1 Hz to 10 Hz)
C
R
= C = 0.1µF
L
IN
L
=
∞
1
V
= 2V/DIV
IN
1
TIME = 200µs/DIV
100µV/DIV
2
V
= 1V/DIV
OUT
CH1 pk-pk = 446µV
CH1 RMS = 60.3µV
Figure 16. ADR3525 Start-Up Response
Figure 19. ADR3550 Output Voltage Noise (10 Hz to 10 kHz)
12
ENABLE
10
8
V
V
C
= 1V/DIV
= 3.0V
= C = 0.1µF
ENABLE
IN
IN
L
L
R
=
∞
1
6
V
= 1V/DIV
4
OUT
TIME = 200µs/DIV
2
2
0
0.1
1
10
100
1k
10k
FREQUENCY (Hz)
Figure 17. ADR3525 Restart Response from Shutdown
Figure 20. ADR3550 Output Noise Spectral Density
Rev. E | Page 8 of 16
Data Sheet
ADR3512
0
C
C
= 1.1µF
L
= 0.1µF
IN
–10
–20
–30
–40
–50
–60
–70
–80
ENABLE
1V/DIV
C
V
R
= C = 0.1µF
L
= 3V
= 1kΩ
IN
IN
L
1
V
= 1V/DIV
2
OUT
TIME = 200µs/DIV
–90
10
100
1k
10k
100k
FREQUENCY (Hz)
Figure 21. ADR3550 Ripple Rejection Ratio vs. Frequency
Figure 24. ADR3525 Shutdown Response
3.2V
2.7V
C
C
R
= 0µF
= 0.1µF
IN
L
L
500mV/DIV
=
∞
C
= C = 0.1µF
L
IN
V
IN
2V/DIV
1
2
V
= 10mV/DIV
OUT
V
OUT
2V/DIV
TIME = 200µs/DIV
2
TIME = 1ms/DIV
1
Figure 22. ADR3550 Start-Up Response
Figure 25. ADR3525 Line Transient Response
SOURCING
I
+10mA
–3mA
L
ENABLE
V
V
C
= 2V/DIV
= 5.5V
= C = 0.1µF
SINKING
SINKING
ENABLE
IN
IN
L
L
1
R
=
∞
C
C
R
=
=
0.1µF
0.1µF
= 250Ω
IN
L
L
V
= 2V/DIV
OUT
2.5V
V
= 20mV/DIV
TIME = 200µs/DIV
OUT
2
TIME = 1ms/DIV
Figure 23. ADR3550 Restart Response from Shutdown
Figure 26. ADR3525 Load Transient Response
Rev. E | Page 9 of 16
ADR3512
Data Sheet
100
90
80
70
60
50
40
30
20
10
0
V
= 5.5 V
IN
ENABLE
2V/DIV
C
= C = 0.1µF
L
= 5V
= 1kΩ
IN
V
R
IN
L
1
V
= 2V/DIV
OUT
2
TIME = 200µs/DIV
–40 –25 –10
5
20
35
50
65
80
95 110 125
TEMPERATURE (°C)
Figure 27. ADR3550 Shutdown Response
Figure 30. Supply Current vs. Temperature
2.0
V
= 100mV/DIV
C
IN
–40°C
+25°C
+125°C
5.5V
5.2V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
= C = 0.1µF
L
IN
1
2
V
= 5mV/DIV
OUT
TIME = 1ms/DIV
0
0
10
20
30
40
50
60
70
80
90
100
ENABLE VOLTAGE (% of V
)
IN
Figure 31. Supply Current vs. ENABLE Pin Voltage
Figure 28. ADR3550 Line Transient Response
10
C
C
= 0.1µF
= 1.1µF
L
L
I
L
+10mA
–3mA
SOURCING
SINKING
SINKING
1
C
C
R
=
=
0.1µF
0.1µF
= 500Ω
IN
L
L
5.0V
0.1
V
= 20mV/DIV
OUT
TIME = 1ms/DIV
0.01
0.01
0.1
1
10
100
1k
10k
FREQUENCY (Hz)
Figure 29. ADR3550 Load Transient Response
Figure 32. ADR3550 Output Impedance vs. Frequency
Rev. E | Page 10 of 16
Data Sheet
ADR3512
80
60
9
8
7
6
40
20
5
0
4
3
2
1
–20
–40
–60
–80
0
0
200
400
600
800
1000
ELAPSED TIME (Hours)
RELATIVE SHIFT IN V
(%)
OUT
Figure 33. Output Voltage Drift Distribution After Reflow (SHR Drift)
Figure 35. ADR3550 Typical Long-Term Output Voltage Drift
(Four Devices, 1000 Hours)
8
T
= +25°C → –40°C → +125°C → +25°C
A
7
6
5
4
3
2
1
0
OUTPUT VOLTAGE HYSTERESIS (ppm)
Figure 34. ADR3550 Thermally Induced Output Voltage Hysteresis
Distribution
Rev. E | Page 11 of 16
ADR3512
Data Sheet
TERMINOLOGY
Dropout Voltage (VDO
)
ΔVOUT_HYS = VOUT(25°C) – VOUT_TC [V]
OUT (25°C)−VOUT _TC
Dropout voltage, sometimes referred to as supply voltage
headroom or supply output voltage differential, is defined as the
minimum voltage differential between the input and output such
that the output voltage is maintained to within 0.1% accuracy.
V
∆VOUT _ HYS
=
×106 [ppm]
VOUT (25°C)
where:
V
V
OUT(25°C) is the output voltage at 25°C.
OUT_TC is the output voltage after temperature cycling.
V
DO = (VIN − VOUT)MIN|IL = Constant
Because the dropout voltage depends on the current passing
through the device, it is always specified for a given load current.
In series mode devices, dropout voltage typically increases
proportionally to load current (see Figure 9 and Figure 10).
Long-Term Output Voltage Drift (ΔVOUT_LTD
)
Long-term output voltage drift refers to the shift in output voltage
after 1000 hours of operation in a constant 50°C environment.
This is expressed as either a shift in voltage or a difference in
ppm from the nominal output.
Temperature Coefficient (TCVOUT
)
The temperature coefficient relates the change in the output
voltage to the change in ambient temperature of the device, as
normalized by the output voltage at 25°C. This parameter is
determined by the box method and is calculated using the
following equation:
ΔVOUT_LTD = |VOUT(t1) – VOUT(t0)| [V]
VOUT (t1 ) −VOUT (t0 )
∆VOUT _ LTD
=
×106 [ppm]
VOUT (t0 )
where:
max(VOUT (T ,T2 ,T3 )) − min(V (T ,T2 ,T3 ))
TCVOUT
=
×106
1
1
OUT
VOUT(t0) is the VOUT at 50°C at Time 0.
OUT(t1) is the VOUT at 50°C after 1000 hours of operation at 50°C.
VOUT (T2 )×(T3 −T2 )
V
Line Regulation
where:
Line regulation refers to the change in output voltage in response to
a given change in input voltage and is expressed in percent per volt,
ppm per volt, or microvolts per volt change in input voltage. This
parameter accounts for the effects of self heating.
TCVOUT is expressed in ppm/°C.
OUT(Tx) is the output voltage at Temperature TX.
T1 = −40°C.
T2 = +25°C.
T3 = +125°C.
V
Load Regulation
Load regulation refers to the change in output voltage in response
to a given change in load current and is expressed in microvolts
per mA, ppm per mA, or ohms of dc output resistance. This
parameter accounts for the effects of self heating.
This three-point method ensures that TCVOUT accurately portrays
the maximum difference between any of the three temperatures
at which the output voltage of the device is measured.
The ADR3512 is tested at three temperatures to determine
TCVOUT: −40°C, +25°C, and +85°C.
Solder Heat Resistance (SHR) Drift
SHR drift refers to the permanent shift in output voltage induced
by exposure to reflow soldering, expressed in units of ppm. SHR
drift is caused by changes in the stress exhibited upon the die by
the package materials when exposed to high temperatures. This
effect is more pronounced in lead-free soldering processes due
to higher reflow temperatures.
Thermally Induced Output Voltage Hysteresis (ΔVOUT_HYS
)
Thermally induced output voltage hysteresis represents the change
in output voltage after the device is exposed to a specified
temperature cycle. This is expressed as either a shift in voltage
or a difference in ppm from the nominal output.
Rev. E | Page 12 of 16
Data Sheet
ADR3512
THEORY OF OPERATION
The ADR3512 uses a patented voltage reference architecture to
achieve high accuracy, low TC, and low noise in a CMOS
process. Like all band gap references, the reference combines
two voltages of opposite TCs to create an output voltage that is
nearly independent of ambient temperature. However, unlike
traditional band gap voltage references, the temperature
independent voltage of the reference is arranged to be the base
emitter voltage, VBE, of a bipolar transistor at room temperature
rather than the VBE extrapolated to 0 K (the VBE of a bipolar
transistor at 0 K is approximately VG0, the band gap voltage of
the silicon). Then, a corresponding positive TC voltage is added
to the VBE voltage to compensate for its negative TC.
LONG-TERM OUTPUT VOLTAGE DRIFT
One of the key parameters of the ADR3512 reference is long-term
output voltage drift. Independent of the output voltage model
and in a 50°C environment, this device exhibits a typical drift
of approximately 30 ppm after 1000 hours of continuous, unloaded
operation.
It is important to understand that long-term output voltage drift
is not tested or guaranteed by design and that the output from the
device may shift beyond the typical 30 ppm specification. Because
most of the drift occurs in the first 200 hours of device operation,
burning in the system board with the reference mounted can
reduce subsequent output voltage drift over time. See the
AN-713 Application Note, The Effect of Long-Term Drift on Voltage
References, for more information regarding the effects of long-term
drift and how it can be minimized.
The key benefit of this technique is that the trimming of the
initial accuracy and TC can be performed without interfering
with one another, thereby increasing overall accuracy across
temperature. Curvature correction techniques further reduce
the temperature variation.
POWER DISSIPATION
The ADR3512 voltage reference is capable of sourcing up to 10 mA
of load current at room temperature across the rated input voltage
range. However, when used in applications subject to high ambient
temperatures, carefully monitor the input voltage and load current
to ensure that the device does not exceed its maximum power
dissipation rating. The maximum power dissipation of the
device can be calculated by
The band gap voltage (VBG) is then buffered and amplified to
produce stable output voltages of 2.5 V and 5.0 V. The output buffer
can source up to +10 mA and sink up to −3 mA of load current.
V
IN
BAND GAP
VOLTAGE
REFERENCE
V
BG
ENABLE
V
V
FORCE
SENSE
TJ − TA
OUT
PD =
[W]
OUT
θJA
R
FB1
GND FORCE
where:
PD is the device power dissipation.
TJ is the device junction temperature.
TA is the ambient temperature.
R
FB2
GND SENSE
θ
JA is the package (junction to air) thermal resistance.
Figure 36. Block Diagram
Because of this relationship, the acceptable load current in high
temperature conditions may be less than the maximum current
sourcing capability of the device. The device must not be operated
outside of its maximum power rating because doing so can
result in premature failure or permanent damage to the device.
The ADR3512 reference leverages Analog Devices patented
DigiTrim technology to achieve high initial accuracy and low
TC. Precision layout techniques lead to very low long-term drift
and thermal hysteresis.
Rev. E | Page 13 of 16
ADR3512
Data Sheet
APPLICATIONS INFORMATION
These voltages are fed back into the internal amplifier and are used
to automatically correct for the voltage drop across the current
carrying output and ground lines, resulting in a highly accurate
output voltage across the load. To achieve the best performance,
connect the sense connections directly to the point in the load
where the output voltage is the most accurate. See Figure 38 for an
example application.
BASIC VOLTAGE REFERENCE CONNECTION
The circuit shown in Figure 37 shows the basic configuration for
the ADR3512 reference. Connect bypass capacitors according to
the guidelines in the following sections.
V
1.2V
OUT
V
IN
8
1
6
2.7V TO
V
V
FORCE
SENSE
IN
OUT
5.5V
7
ENABLE
V
OUT
OUTPUT CAPACITOR(S) SHOULD
BE MOUNTED AS CLOSE
FORCE PIN AS POSSIBLE.
0.1µF
1µF
0.1µF
TO V
OUT
ADR3512
0.1µF
2
3
GND SENSE
GND FORCE
8
1
6
7
V
V
V
OUT
FORCE
SENSE
IN
IN
ENABLE
V
OUT
Figure 37. Basic Reference Connection
CONNECT SENSE
CONNECTIONS AS
CLOSE AS POSSIBLE
TO LOAD DEVICE.
LOAD
INPUT AND OUTPUT CAPACITORS
1µF
0.1µF
ADR3512
Connect a 1 µF to 10 µF electrolytic or ceramic capacitor to the
input to improve transient response in applications where the
supply voltage may fluctuate. Connect an additional 0.1 µF ceramic
capacitor in parallel to reduce high frequency supply noise.
GND SENSE
GND FORCE
2
3
Figure 38. Application Showing Kelvin Connection
Connect a ceramic capacitor of at least a 0.1 µF to the output to
improve stability and help filter out high frequency noise. An
additional 1 µF to 10 µF electrolytic or ceramic capacitor can be
added in parallel to improve transient performance in response
to sudden changes in load current; however, note that doing so
increases the turn-on time of the device.
It is always advantageous to use Kelvin connections whenever
possible. However, in applications where the IR drop is negligible
or an extra set of traces cannot be routed to the load, the
GND FORCE pin and the GND SENSE pin for both VOUT and
ground can simply be tied together, and the device can be used
in the same way as a normal 3-terminal reference (see Figure 37).
Best performance and stability is attained with low equivalent
series resistance (ESR) (for example, less than 1 Ω), low inductance,
ceramic chip type output capacitors (X5R, X7R, or similar). If using
an electrolytic capacitor on the output, place a 0.1 µF ceramic
capacitor in parallel to reduce overall ESR on the output.
VIN SLEW RATE CONSIDERATIONS
In applications with slow rising input voltage signals, the reference
exhibits overshoot or other transient anomalies that appear on
the output. These phenomena also appear during shutdown as
the internal circuitry loses power.
4-WIRE KELVIN CONNECTIONS
To avoid such conditions, ensure that the input voltage waveform
has both a rising and falling slew rate of at least 0.1 V/ms.
Current flowing through a printed circuit board (PCB) trace
produces an IR voltage drop. With longer traces, this drop can
reach several millivolts or more, introducing a considerable error
into the output voltage of the reference. A 1 inch long, 5 mm wide
trace of 1 ounce copper has a resistance of approximately 100 mΩ
at room temperature; at a load current of 10 mA, this can introduce
a full millivolt of error. In an ideal board layout, the reference is
mounted as close to the load as possible to minimize the length of
the output traces, and, therefore, the error introduced by the
voltage drop. However, in applications where this is not possible
or convenient, force and sense connections (sometimes referred
to as Kelvin sensing connections) are provided as a means of
minimizing the IR drop and improving accuracy.
SHUTDOWN/ENABLE FEATURE
The ADR3512 reference can be switched to a low power shutdown
mode when a voltage of 0.7 V or lower is input to the ENABLE pin.
Likewise, the reference becomes operational for ENABLE voltages
of 0.85 × VIN or higher. During shutdown, the supply current drops
to less than 5 µA, useful in applications that are sensitive to power
consumption.
If using the shutdown feature, ensure that the ENABLE pin
voltage does not fall between 0.7 V and 0.85 × VIN because this
causes a large increase in the supply current of the device and
may keep the reference from starting up correctly (see Figure 31).
If not using the shutdown feature, however, the ENABLE pin
can be tied to the VIN pin and the reference remains continuously
operational.
Kelvin connections work by providing a set of high impedance,
voltage sensing lines to the output and ground nodes. Because
very little current flows through these connections, the IR drop
across their traces is negligible, and the output and ground voltages
can be sensed accurately.
Rev. E | Page 14 of 16
Data Sheet
ADR3512
SAMPLE APPLICATIONS
Negative Reference
8
1
6
7
+1.2V
V
V
V
OUT
FORCE
SENSE
IN
IN
R1
10kΩ
ENABLE
V
OUT
1µF
0.1µF
Figure 39 shows how to connect the ADR3512 and a standard
CMOS operational amplifier, such as the AD8663, to provide a
negative reference voltage. This configuration provides two main
advantages: first, it requires only two devices and, therefore, does
not require excessive board space. Second, it does not require any
external resistors, meaning that the performance of this circuit
does not rely on choosing expensive devices with low temperature
coefficients to ensure accuracy.
0.1µF
ADR3512
R2
10kΩ
2
3
GND SENSE
GND FORCE
+15V
–1.2V
ADA4000-1
R3
5kΩ
VDD
–15V
Figure 40. Bipolar Output Reference
AD8663
8
1
6
7
V
V
FORCE
SENSE
IN
OUT
–1.2V
Boosted Output Current Reference
ENABLE
V
OUT
Figure 41 shows a configuration for obtaining higher current
drive capability from the ADR3512 reference without sacrificing
accuracy. The operational amplifier regulates the current flow
through the MOSFET until VOUT equals the output voltage of
the reference; current is then drawn directly from VIN rather
than from the reference itself, allowing increased current
drive capability.
0.1µF
–VDD
1µF
0.1µF
0.1µF
ADR3512
2
3
GND SENSE
GND FORCE
Figure 39. Negative Reference
In Figure 39, the VOUT FORCE pin and the VOUT SENSE pin of
the reference sit at virtual ground. The negative reference voltage
and load current are taken directly from the output of the
operational amplifier. Note that, in applications where the negative
supply voltage is close to the reference output voltage, a dual-
supply, low offset, rail-to-rail output amplifier must be used to
ensure an accurate output voltage. The operational amplifier must
also be able to source or sink an appropriate amount of current
for the application.
V
IN
+16V
U6
R1
2N7002
100Ω
8
1
6
V
V
FORCE
SENSE
IN
OUT
AD8663
ENABLE
V
7
OUT
V
OUT
1µF 0.1µF
0.1µF
ADR3512
C
L
0.1µF
R
L
200Ω
Bipolar Output Reference
2
3
GND SENSE
GND FORCE
Figure 40 shows a bipolar reference configuration. By connecting
the output of the ADR3512 to the inverting terminal of an
operational amplifier, it is possible to obtain both positive and
negative reference voltages. Match Resistors R1 and R2 as close as
possible to ensure minimal difference between the negative and
positive outputs. Use resistors with low temperature coefficients
if the circuit is used in environments with large temperature swings;
otherwise, a voltage difference develops between the two outputs as
the ambient temperature changes.
Figure 41. Boosted Output Current Reference
Because the current sourcing capability of this circuit depends only
on the ID rating of the MOSFET, the output drive capability can be
adjusted to the application simply by choosing an appropriate
MOSFET. In all cases, tie the VOUT SENSE pin directly to the
load device to maintain maximum output voltage accuracy.
Rev. E | Page 15 of 16
ADR3512
Data Sheet
OUTLINE DIMENSIONS
3.20
3.00
2.80
8
1
5
4
5.15
4.90
4.65
3.20
3.00
2.80
PIN 1
IDENTIFIER
0.65 BSC
0.95
0.85
0.75
15° MAX
1.10 MAX
0.80
0.55
0.40
0.15
0.05
0.23
0.09
6°
0°
0.40
0.25
COPLANARITY
0.10
COMPLIANT TO JEDEC STANDARDS MO-187-AA
Figure 42. 8-Lead Mini Small Outline Package [MSOP]
(RM-8)
Dimensions show in millimeters
ORDERING GUIDE
Ordering
Output Voltage (V) Temperature Range Package Description Package Option Quantity Branding
Model1, 2
ADR3512WCRMZ-R7 1.200
−40°C to +125°C
8-Lead MSOP
RM-8
1000
R3K
1 W = Qualified for Automotive Applications.
2 Z = RoHS Compliant Part.
AUTOMOTIVE PRODUCTS
The ADR3512W models are available with controlled manufacturing to support the quality and reliability requirements of automotive
applications. Note that these automotive models may have specifications that differ from the commercial models; therefore, designers
should review the Specifications section of this data sheet carefully. Only the automotive grade products shown are available for use in
automotive applications. Contact your local Analog Devices account representative for specific product ordering information and to
obtain the specific Automotive Reliability reports for these models.
©2015 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D11113-0-11/15(E)
Rev. E | Page 16 of 16
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