AT45DB321D_12_技术文档

AT45DB321D

32Mb, 2.5V or 2.7V

DataFlash

DATASHEET

Features

● Single 2.5V - 3.6V or 2.7V - 3.6V supply

● RapidS^™serial interface: 66MHz maximum clock frequency

● SPI compatible modes 0 and 3

● User configurable page size

● 512 bytes per page

● 528 bytes per page

● Page size can be factory preconfigured for 512 bytes

● Page program operation

● Intelligent programming operation

● 8,192 pages (512/528 bytes/page) main memory

● Flexible erase options

● Page erase (512 bytes)

● Block erase (4KB)

● Sector erase (64KB)

● Chip erase (32Mb)

● Two SRAM data buffers (512/528 bytes)

● Allows receiving data while reprogramming the flash array

● Continuous read capability through entire array

● Ideal for code shadowing applications

● Low power dissipation

● 7mA active read current ,typical

● 25μA standby current, typical

● 15μA deep power down, typical

● Hardware and software data protection features

● Individual sector

● Sector lockdown for secure code and data storage

● Individual sector

● Security: 128-byte security register

● 64-byte user programmable space

● Unique 64-byte device identifier

● JEDEC standard manufacturer and device ID read

● 100,000 program/erase cycles per page, minimum

● Data retention: 20 years

● Industrial temperature range

● Green (Pb/halide-free/RoHS compliant) packaging options

3597R–DFLASH–11/2012

1.

Description

The AT45DB321D is a 2.5V or 2.7V, serial interface, sequential access flash memory ideally suited for a wide variety of digital

voice-, image-, program code-, and data-storage applications. The AT45DB321D supports the RapidS serial interface for

applications requiring very high speed operations. The RapidS serial interface is SPI compatible for frequencies up to 66MHz.

The 34,603,008-bits of memory are organized as 8,192 pages of 512 bytes or 528 bytes each. In addition to the main memory,

the AT45DB321D also contains two SRAM buffers of 512/528 bytes each. These buffers allow the receiving of data while a

page in the main memory is being reprogrammed, as well as the writing of a continuous data stream. EEPROM (electrically

erasable and programmable read-only memory) emulation (bit or byte alterability) is easily handled with a self-contained,

three-step read-modify-write operation. Unlike conventional flash memories, which are accessed randomly with multiple

address lines and a parallel interface, DataFlash^®devices use a RapidS serial interface to sequentially access its data. The

simple sequential access dramatically reduces active pin count, facilitates hardware layout, increases system reliability,

minimizes switching noise, and reduces package size. The device is optimized for use in many commercial and industrial

applications where high density, low pin count, low voltage and low power are essential.

To allow for simple, in-system reprogrammability, the AT45DB321D does not require high input voltages for programming. The

device operates from a single power supply, 2.7V to 3.6V, for both the program and read operations. The AT45DB321D is

enabled through the chip select pin (CS) and accessed via a three-wire interface consisting of the serial input (SI), serial output

(SO), and serial clock (SCK) lines.

All programming and erase cycles are self timed.

Figure 1-1. Pin configurations and pinouts.

MLF⁽¹⁾(VDFN)

Top View

SOIC

Top View

SI

SCK

RESET

CS

1

2

3

4

8

7

6

5

SO

SI

SCK

RESET

CS

1

2

3

4

8

SO

GND

VCC

WP

7

6

5

GND

VCC

WP

Note:

1. The metal pad on the bottom of

the MLF package is floating.

This pad can be a “No Connect” or

connected to GND.

BGA Package Ball-out

Top View

TSOP: Type 1

Top View

1

2

3

4

5

RDY/BUSY

RESET

WP

1

28

27

26

25

24

23

22

21

20

19

18

17

16

15

NC

2

3

NC

4

A

B

C

D

E

NC

5

NC

VCC

GND

NC

6

7

NC

SCK

GND

VCC

8

NC

9

NC

CS RDY/BSY WP

NC

10

11

12

13

14

CS

SO

NC

SI

RESET

NC

SCK

SI

NC

SO

Note:

TSOP package is not recommended for new designs.

Future die shrinks will support 8-pin packages only.

AT45DB321D [DATASHEET]

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3597R–DFLASH–11/2012

Table 1-1. Pin Configurations

Symbol

Asserted

State

Name and Function

Type

Chip Select: Asserting the CS pin selects the device. When the CS pin is deasserted, the

device will be deselected and normally be placed in the standby mode (not deep power-

down mode), and the output pin (SO) will be in a high-impedance state. When the device

is deselected, data will not be accepted on the input pin (SI).

CS

Low

Input

A high-to-low transition on the CS pin is required to start an operation, and a low-to-high

transition is required to end an operation. When ending an internally self-timed operation

such as a program or erase cycle, the device will not enter the standby mode until the

completion of the operation.

Serial Clock: This pin is used to provide a clock to the device, and is used to control the

flow of data to and from the device. Command, address, and input data present on the SI

pin are always latched on the rising edge of SCK, while output data on the SO pin are

always clocked out on the falling edge of SCK.

SCK

SI

–

Input

Serial Input: The SI pin is used to shift data into the device. The SI pin is used for all data

input, including command and address sequences. Data on the SI pin are always latched

on the rising edge of SCK.

Serial Output: The SO pin is used to shift data out from the device. Data on the SO pin

are always clocked out on the falling edge of SCK.

SO

–

Output

Input

Write Protect: When the WP pin is asserted, all sectors specified for protection by the

sector protection register will be protected against program and erase operations,

regardless of whether the enable sector protection command has been issued or not. The

WP pin functions independently of the software controlled protection method. After the

WP pin goes low, the content of the sector protection register cannot be modified.

WP

Low

If a program or erase command is issued to the device while the WP pin is asserted, the

device will simply ignore the command and perform no operation. The device will return to

the idle state once the CS pin has been deasserted. The enable sector protection

command and sector lockdown command, however, will be recognized by the device

when the WP pin is asserted.

The WP pin is internally pulled high, and may be left floating if hardware controlled

protection will not be used. However, it is recommended that the WP pin also be

externally connected to V_CCwhenever possible.

Reset: A low state on the reset pin (RESET) will terminate the operation in progress and

reset the internal state machine to an idle state. The device will remain in the reset

condition as long as a low level is present on the RESET pin. Normal operation can

resume once the RESET pin is brought back to a high level.

RESET

Low

Input

The device incorporates an internal power-on reset circuit, and so there are no restrictions

on the RESET pin during power-on sequences. If this pin and feature are not utilized, it is

recommended that the RESET pin be driven high externally.

Ready/Busy: This open drain output pin will be driven low when the device is busy in an

internally self-timed operation. This pin, which is normally in a high state (through

an external pull-up resistor), will be pulled low during programming/erase operations,

compare operations, and page-to-buffer transfers.

RDY/BUSY

–

Output

The busy status indicates that the flash memory array and one of the buffers cannot be

accessed; read and write operations to the other buffer can still be performed.

Device Power Supply: The V_CCpin is used to supply the source voltage to the device.

V_CC

–

Power

Operations at invalid V_CCvoltages may produce spurious results and should not be

attempted.

Ground: The ground reference for the power supply. GND should be connected to the

GND

Ground

system ground.

AT45DB321D [DATASHEET]

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3597R–DFLASH–11/2012

Figure 1-2. Block Diagram

WP

Flash Memory Array

Page (512-/528-bytes)

Buffer 1 (512-/528-bytes)

Buffer 2 (512-/528-bytes)

SCK

CS

RESET

VCC

I/O Interface

GND

RDY/BUSY

SI

SO

2.

Memory Array

To provide optimal flexibility, the AT45DB321D memory array is divided into three levels of granularity comprising sectors,

blocks, and pages. The “Memory Architecture Diagram” illustrates the breakdown of each level, and details the number of

pages per sector and block. All program operations to the DataFlash device occur on a page-by-page basis. The erase

operations can be performed at the chip, sector, block, or page level.

Figure 2-1. Memory Architecture Diagram

Sector Architecture

Block Architecture

Page Architecture

BLOCK 0

BLOCK 1

BLOCK 2

8 Pages

PAGE 0

SECTOR 0a

SECTOR 0a = 8 Pages

4,096-/4,224-bytes

PAGE 1

SECTOR 0b = 120 Pages

61,440-/63,360-bytes

PAGE 6

PAGE 7

PAGE 8

PAGE 9

BLOCK 62

BLOCK 63

BLOCK 64

BLOCK 65

SECTOR 1 = 128 Pages

65,536-/67,584-bytes

SECTOR 2 = 128 Pages

65,536-/67,584-bytes

PAGE 14

PAGE 15

PAGE 16

PAGE 17

PAGE 18

BLOCK 126

BLOCK 127

BLOCK 128

BLOCK 129

SECTOR 62 = 128 Pages

65,536-/67,584-bytes

SECTOR 63 = 128 Pages

65,536-/67,586-bytes

BLOCK 1,022

BLOCK 1,023

PAGE 8,190

PAGE 8,191

Block = 4,096-/4,224-bytes

Page = 512-/528-bytes

AT45DB321D [DATASHEET]

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3.

Device Operation

The device operation is controlled by instructions from the host processor. The list of instructions and their associated opcodes

are contained in Table 13-1 on page 24 through Table 13-7 on page 27. A valid instruction starts with the falling edge of CS,

followed by the appropriate 8-bit opcode and the desired buffer or main memory address location. While the CS pin is low,

toggling the SCK pin controls the loading of the opcode and the desired buffer or main memory address location through the SI

(serial input) pin. All instructions, addresses, and data are transferred with the most-significant bit (msb) first.

Buffer addressing for the standard DataFlash page size (528 bytes) is referenced in the datasheet using the terminology BFA9

- BFA0 to denote the ten address bits required to designate a byte address within a buffer. Main memory addressing is

referenced using the terminology PA12 - PA0 and BA9 - BA0, where PA12 - PA0 denotes the 13 address bits required to

designate a page address and BA9 - BA0 denotes the ten address bits required to designate a byte address within the page.

For a “power of two” binary page size (512 bytes), the buffer addressing is referenced in the datasheet using the conventional

terminology BFA8 - BFA0 to denote the nine address bits required to designate a byte address within a buffer. Main memory

addressing is referenced using the terminology A21 - A0, where A21 - A9 denotes the 13 address bits required to designate a

page address and A8 - A0 denotes the nine address bits required to designate a byte address within a page.

4.

Read Commands

By specifying the appropriate opcode, data can be read from the main memory or from either one of the two SRAM data buffers.

The DataFlash device supports RapidS protocols for Mode 0 and Mode 3. Please refer to Section 22., Detailed Bit-level Read

Waveform – RapidS Serial Interface Mode 0/Mode 3 diagrams in this datasheet for details on the clock cycle sequences for

each mode.

4.1

Continuous Array Read (Legacy Command: E8H): Up to 66MHz

By supplying an initial starting address for the main memory array, the continuous array read command can be utilized to

sequentially read a continuous stream of data from the device by simply providing a clock signal; no additional addressing

information or control signals need to be provided. The DataFlash device incorporates an internal address counter that will

automatically increment on every clock cycle, allowing one continuous read operation without the need of additional address

sequences. To perform a continuous read from the standard DataFlash page size (528 bytes), an opcode of E8H must be

clocked into the device, followed by three address bytes (which comprise the 24-bit page and byte address sequence) and four

“don’t care” bytes. The first 13 bits (PA12 - PA0) of the 23-bit address sequence specify which page of the main memory array

to read, and the last 10 bits (BA9 - BA0) of the 23-bit address sequence specify the starting byte address within the page. To

perform a continuous read from the binary page size (512-bytes), the opcode (E8H) must be clocked into the device followed by

three address bytes and four don’t care bytes. The first 13 bits (A21 - A9) of the 22-bit sequence specify which page of the main

memory array to read, and the last 9 bits (A8 - A0) of the 22-bit address sequence specify the starting byte address within the

page. The don’t care bytes that follow the address bytes are needed to initialize the read operation. Following the don’t care

bytes, additional clock pulses on the SCK pin will result in data being output on the SO (serial output) pin.

The CS pin must remain low during the loading of the opcode, the address bytes, the don’t care bytes, and the reading of data.

When the end of a page in main memory is reached during a continuous array read, the device will continue reading at the

beginning of the next page, with no delays incurred during the page boundary crossover (the crossover from the end of one

page to the beginning of the next page). When the last bit in the main memory array has been read, the device will continue

reading back at the beginning of the first page of memory. As with crossing over page boundaries, no delays will be incurred

when wrapping around from the end of the array to the beginning of the array.

A low-to-high transition on the CS pin will terminate the read operation and tri-state the output pin (SO). The maximum SCK

frequency allowable for the continuous array read is defined by the f_CAR1specification. The continuous array read bypasses

both data buffers and leaves the contents of the buffers unchanged.

4.2

Continuous Array Read (High Frequency Mode: 0BH): Up to 66MHz

This command can be used with the serial interface to read the main memory array sequentially in high-speed mode for any

clock frequency up to the maximum specified by f_CAR1. To perform a continuous read array with the page size set to 528 bytes,

CS must first be asserted, and then a 0BH opcode must be clocked into the device, followed by three address bytes and a

dummy byte. The first 13 bits (PA12 - PA0) of the 23-bit address sequence specify which page of the main memory array to

read, and the last 10 bits (BA9 - BA0) of the 23-bit address sequence specify the starting byte address within the page. To

perform a continuous read with the page size set to 512 bytes, the 0BH opcode must be clocked into the device, followed by

three address bytes (A21 - A0) and a dummy byte. Following the dummy byte, additional clock pulses on the SCK pin will result

in data being output on the SO (serial output) pin.

AT45DB321D [DATASHEET]

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3597R–DFLASH–11/2012

The CS pin must remain low during the loading of the opcode, the address bytes, and the reading of data. When the end of a

page in the main memory is reached during a continuous array read, the device will continue reading at the beginning of the

next page, with no delays incurred during the page boundary crossover (the crossover from the end of one page to the

beginning of the next page). When the last bit in the main memory array has been read, the device will continue reading back at

the beginning of the first page of memory. As with crossing over page boundaries, no delays will be incurred when wrapping

around from the end of the array to the beginning of the array. A low-to-high transition on the CS pin will terminate the read

operation and tri-state the output pin (SO). The maximum SCK frequency allowable for the continuous array read is defined by

the f_CAR1specification. The continuous array read bypasses both data buffers and leaves the contents of the buffers unchanged.

4.3

Continuous Array Read (Low Frequency Mode: 03H): Up to 33MHz

This command can be used with the serial interface to read the main memory array sequentially without a dummy byte up to the

maximum frequency specified by f_CAR2. To perform a continuous read array with the page size set to 528 bytes, the CS must

first be asserted, and then a 03H opcode must be clocked into the device, followed by three address bytes (which comprise the

24-bit page and byte address sequence). The first 13 bits (PA12 - PA0) of the 23-bit address sequence specify which page of

the main memory array to read, and the last 10 bits (BA9 - BA0) of the 23-bit address sequence specify the starting byte

address within the page. To perform a continuous read with the page size set to 512 bytes, the 03H opcode must be clocked

into the device, followed by three address bytes (A21 - A0). Following the address bytes, additional clock pulses on the SCK pin

will result in data being output on the SO (serial output) pin.

The CS pin must remain low during the loading of the opcode, the address bytes, and the reading of data. When the end of a

page in the main memory is reached during a continuous array read, the device will continue reading at the beginning of the

next page with no delays incurred during the page boundary crossover (the crossover from the end of one page to the beginning

of the next page). When the last bit in the main memory array has been read, the device will continue reading back at the

beginning of the first page of memory. As with crossing over page boundaries, no delays will be incurred when wrapping around

from the end of the array to the beginning of the array. A low-to-high transition on the CS pin will terminate the read operation

and tri-state the output pin (SO). The continuous array read bypasses both data buffers and leaves the contents of the buffers

unchanged.

4.4

Main Memory Page Read

A main memory page read allows the user to read data directly from any one of the 8,192 pages in the main memory, bypassing

both of the data buffers and leaving the contents of the buffers unchanged. To start a page read from the standard DataFlash

page size (528 bytes), an opcode of D2H must be clocked into the device, followed by three address bytes (which comprise the

24-bit page and byte address sequence) and four don’t care bytes. The first 13 bits (PA12 - PA0) of the 23-bit address

sequence specify the page in main memory to be read, and the last 10 bits (BA9 - BA0) of the 23-bit address sequence specify

the starting byte address within that page. To start a page read from the binary page size (512 bytes), the D2H opcode must be

clocked into the device, followed by three address bytes and four don’t care bytes. The first 13 bits (A21 - A9) of the 22-bit

sequence specify which page of the main memory array to read, and the last 9 bits (A8 - A0) of the 22-bit address sequence

specify the starting byte address within the page. The don’t care bytes that follow the address bytes are sent to initialize the

read operation. Following the don’t care bytes, additional pulses on SCK result in data being output on the SO (serial output)

pin. The CS pin must remain low during the loading of the opcode, the address bytes, the don’t care bytes, and the reading of

data. When the end of a page in main memory is reached, the device will continue reading back at the beginning of the same

page. A low-to-high transition on the CS pin will terminate the read operation and tri-state the output pin (SO). The maximum

SCK frequency allowable for the main memory page read is defined by the f_SCKspecification. The main memory page read

bypasses both data buffers and leaves the contents of the buffers unchanged.

4.5

Buffer Read

The SRAM data buffers can be accessed independently of the main memory array, and utilizing the buffer read command

allows data to be sequentially read directly from the buffers. Four opcodes, D4H or D1H for buffer 1 and D6H or D3H for buffer

2, can be used for the buffer read command. The use of each opcode depends on the maximum SCK frequency that will be

used to read data from the buffer. The D4H and D6H opcodes can be used at any SCK frequency, up to the maximum specified

by f_CAR1. The D1H and D3H opcodes can be used for lower frequency read operations, up to the maximum specified by f_CAR2

.

To perform a buffer read from the standard DataFlash buffer (528 bytes), the opcode must be clocked into the device, followed

by three address bytes comprised of 14 don’t care bits and 10 buffer address bits (BFA9 - BFA0). To perform a buffer read from

the binary buffer (512 bytes), the opcode must be clocked into the device, followed by three address bytes comprised of 15

don’t care bits and 9 buffer address bits (BFA8 - BFA0). Following the address bytes, one don’t care byte must be clocked in to

initialize the read operation. The CS pin must remain low during the loading of the opcode, the address bytes, the don’t care

byte, and the reading of data. When the end of a buffer is reached, the device will continue reading back at the beginning of the

buffer. A low-to-high transition on the CS pin will terminate the read operation and tri-state the output pin (SO).

AT45DB321D [DATASHEET]

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5.

Program and Erase Commands

5.1

Buffer Write

Data can be clocked in from the input pin (SI) into either buffer 1 or buffer 2. To load data into the standard DataFlash buffer

(528 bytes), a 1-byte opcode, 84H for buffer 1 or 87H for buffer 2, must be clocked into the device, followed by three address

bytes comprised of 14 don’t care bits and 10 buffer address bits (BFA9 - BFA0). The 10 buffer address bits specify the first byte

in the buffer to be written. To load data into the binary buffers (512 bytes each), a 1-byte 84H opcode for buffer 1 or 87H opcode

for buffer 2 must be clocked into the device, followed by three address bytes comprised of 15 don’t care bits and 9 buffer

address bits (BFA8 - BFA0). The nine buffer address bits specify the first byte in the buffer to be written. After the last address

byte has been clocked into the device, data can then be clocked in on subsequent clock cycles. If the end of the data buffer is

reached, the device will wrap around back to the beginning of the buffer. Data will continue to be loaded into the buffer until a

low-to-high transition is detected on the CS pin.

5.2

Buffer to Main Memory Page Program with Built-in Erase

Data written into either buffer 1 or buffer 2 can be programmed into the main memory. A 1-byte opcode, 83H for buffer 1 or 86H

for buffer 2, must be clocked into the device. For the standard DataFlash page size (528 bytes), the opcode must be followed by

three address bytes consist of 1 don’t care bit, 13 page address bits (PA12 - PA0) that specify the page in the main memory to

be written, and 10 don’t care bits. To perform a buffer to main memory page program with built-in erase for the binary page size

(512 bytes), the 83H opcode for buffer 1 or 86H opcode for buffer 2 must be clocked into the device, followed by three address

bytes consisting of 2 don’t care bits, 13 page address bits (A21 - A9) that specify the page in the main memory to be written, and

9 don’t care bits. When a low-to-high transition occurs on the CS pin, the part will first erase the selected page in main memory

(the erased state is a logic one) and then program the data stored in the buffer into the specified page in main memory. The

erase and the programming of the page are internally self-timed, and should take place in a maximum time of t_EP. During this

time, the status register and the RDY/BUSY pin will indicate that the part is busy.

5.3

Buffer to Main Memory Page Program without Built-in Erase

A previously-erased page within main memory can be programmed with the contents of either buffer 1 or buffer 2. A one-byte

opcode, 88H for buffer 1 or 89H for buffer 2, must be clocked into the device. For the standard DataFlash page size (528 bytes),

the opcode must be followed by three address bytes that consist of 1 don’t care bit, 13 page address bits (PA12 - PA0) that

specify the page in the main memory to be written, and 10 don’t care bits. To perform a buffer to main memory page program

without built-in erase for the binary page size (512 bytes), the 88H opcode for buffer 1 or 89H opcode for buffer 2 must be

clocked into the device, followed by three address bytes consisting of 2 don’t care bits, 13 page address bits (A21 - A9) that

specify the page in the main memory to be written, and 9 don’t care bits. When a low-to-high transition occurs on the CS pin, the

part will program the data stored in the buffer into the specified page in the main memory. It is necessary that the page in main

memory being programmed has been previously erased using one of the erase commands (page erase or block erase). The

programming of the page is internally self-timed, and should take place in a maximum time of t_P. During this time, the status

register and the RDY/BUSY pin will indicate that the part is busy.

5.4

Page Erase

The page erase command can be used to individually erase any page in the main memory array, allowing the buffer to main

memory page program to be utilized at a later time. To perform a page erase in the standard DataFlash page size (528 bytes),

an opcode of 81H must be loaded into the device, followed by three address bytes comprised of 1 don’t care bit, 13 page

address bits (PA12 - PA0) that specify the page in the main memory to be erased, and 10 don’t care bits. To perform a page

erase in the binary page size (512 bytes), the 81H opcode must be loaded into the device, followed by three address bytes

consisting of 2 don’t care bits, 13 page address bits (A21 - A9) that specify the page in the main memory to be erased, and 9

don’t care bits. When a low-to-high transition occurs on the CS pin, the part will erase the selected page (the erased state is a

logical 1). The erase operation is internally self-timed, and should take place in a maximum time of t_PE. During this time, the

status register and the RDY/BUSY pin will indicate that the part is busy.

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5.5

Block Erase

A block of eight pages can be erased at one time. This command is useful when large amounts of data have to be written into

the device. This will avoid using multiple page erase commands. To perform a block erase for the standard DataFlash page size

(528-bytes), an opcode of 50H must be loaded into the device, followed by three address bytes comprised of 1 don’t care bit,

10 page address bits (PA12-PA3), and 13 don’t care bits. The 10 page address bits are used to specify which block of eight

pages is to be erased. To perform a block erase for the binary page size (512 bytes), the 50H opcode must be loaded into the

device, followed by three address bytes consisting of 2 don’t care bits, 10 page address bits (A21 - A12), and 12 don’t care bits.

The 10 page address bits are used to specify which block of eight pages is to be erased. When a low-to-high transition occurs

on the CS pin, the part will erase the selected block of eight pages. The erase operation is internally self-timed, and should take

place in a maximum time of t_BE. During this time, the status register and the RDY/BUSY pin will indicate that the part is busy.

Table 5-1. Block Erase Addressing

PA12/

A21

PA11/

A20

PA10/

A19

PA9/

A18

PA8/

A17

PA7/

A16

PA6/

A15

PA5/

A14

PA4/

A13

PA3/

A12

PA2/

A11

PA1/

A10

PA0/

A9

Block

0

●

1

0

●

1

0

●

1

0

●

1

0

●

1

0

●

1

0

●

1

0

●

1

0

1

●

0

1

0

1

0

1

●

0

1

0

1

X

●

X

●

X

●

X

0

1

2

3

●

1020

1021

1022

1023

5.6

Sector Erase

The sector erase command can be used to individually erase any sector in the main memory. There are 64 sectors, and only

one sector can be erased at a time. To perform a sector 0a or sector 0b erase for the standard DataFlash page size (528 bytes),

an opcode of 7CH must be loaded into the device, followed by three address bytes comprised of 1 don’t care bit, 10 page

address bits (PA12 - PA3), and 13 don’t care bits. To perform a sector 1-63 erase, the 7CH opcode must be loaded into the

device, followed by three address bytes comprised of 1 don’t care bit, 6 page address bits (PA12 - PA7), and 17 don’t care bits.

To perform a sector 0a or sector 0b erase for the binary page size (512 bytes), an opcode of 7CH must be loaded into the

device, followed by three address bytes comprised of 2 don’t care bits, 10 page address bits (A21 - A12), and 12 don’t care bits.

To perform a sector 1-63 erase, the 7CH opcode must be loaded into the device, followed by three address bytes comprised of

2 don’t care bits, 6 page address bits (A21 - A16), and 16 don’t care bits. The page address bits are used to specify any valid

address location within the sector to be erased. When a low-to-high transition occurs on the CS pin, the part will erase the

selected sector. The erase operation is internally self-timed, and should take place in a maximum time of t_SE. During this time,

the status register and the RDY/BUSY pin will indicate that the part is busy.

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Table 5-2. Sector Erase Addressing

PA12/

A21

PA11/

A20

PA10/

A19

PA9/

A18

PA8/

A17

PA7/

A16

PA6/

A15

PA5/

A14

PA4/

A13

PA3/

A12

PA2/

A11

PA1/

A10

PA0/

A9

Sector

0a

0b

1

0

●

1

0

●

1

0

●

1

0

●

1

0

1

●

0

1

0

1

0

●

0

1

0

1

0

1

X

●

X

●

X

●

X

●

X

●

X

●

X

●

X

2

●

60

61

62

63

5.7

Chip Erase⁽¹⁾

The entire main memory can be erased at one time by using the chip erase command.

To execute the chip erase command, a four-byte command sequence, C7H, 94H, 80H, and 9AH, must be clocked into the

device. Since the entire memory array is to be erased, no address bytes need to be clocked into the device, and any data

clocked in after the opcode will be ignored. After the last bit of the opcode sequence has been clocked in, the CS pin can be

deasserted to start the erase process. The erase operation is internally self-timed, and should take place in a time of t_CE. During

this time, the status register will indicate that the device is busy.

The chip erase command will not affect sectors that are protected or locked down; the contents of those sectors will remain

unchanged. Only those sectors that are not protected or locked down will be erased.

Note:

1. Refer to the errata regarding chip erase on page 51.

The WP pin can be asserted while the device is erasing, but protection will not be activated until the internal erase cycle

completes.

Table 5-3. Chip Erase Command

Command

Byte 1

Byte 2

Byte 3

Byte 4

Chip erase

C7H

94H

80H

9AH

Figure 5-1. Chip Erase

CS

Opcode

Byte 2

Opcode

Byte 3

Opcode

Byte 4

SI

Byte 1

Each transition

represents 8 bits

Note:

1. Refer to the errata regarding chip erase on page 51.

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5.8

Main Memory Page Program through Buffer

This operation is a combination of the buffer write and buffer to main memory page program with built-in erase operations. Data

are first clocked into buffer 1 or buffer 2 from the input pin (SI), and then programmed into a specified page in the main memory.

To perform a main memory page program through buffer for the standard DataFlash page size (528 bytes), a one-byte opcode,

82H for buffer 1 or 85H for buffer 2, must first be clocked into the device, followed by three address bytes. The address bytes

are comprised of 1 don’t care bit, 13 page address bits, (PA12 - PA0) that select the page in the main memory where data is to

be written, and 10 buffer address bits (BFA9 - BFA0) that select the first byte in the buffer to be written. To perform a main

memory page program through buffer for the binary page size (512 bytes), the 82H opcode for buffer 1 or 85H opcode for buffer

2 must be clocked into the device, followed by three address bytes consisting of 2 don’t care bits, 13 page address bits (A21 -

A9) that specify the page in the main memory to be written, and 9 buffer address bits (BFA8 - BFA0) that select the first byte in

the buffer to be written. After all address bytes are clocked in, the part will take data from the input pins and store them in the

specified data buffer. If the end of the buffer is reached, the device will wrap around back to the beginning of the buffer. When

there is a low-to-high transition on the CS pin, the part will first erase the selected page in main memory to all ones, and then

program the data stored in the buffer into that memory page. Both the erase and the programming of the page are internally

self-timed, and should take place in a maximum time of t_EP. During this time, the status register and the RDY/BUSY pin will

indicate that the part is busy.

6.

Sector Protection

Two protection methods, hardware and software controlled, are provided for protection against inadvertent or erroneous

program and erase cycles. The software controlled method relies on the use of software commands to enable and disable

sector protection, while the hardware controlled method employs the use of the write protect (WP) pin. The selection of which

sectors are to be protected or unprotected against program and erase operations is specified in the nonvolatile sector protection

register. The status of whether or not sector protection has been enabled or disabled by either the software or the hardware

controlled methods can be determined by checking the status register.

6.1

Software Sector Protection

6.1.1 Enable Sector Protection Command

Sectors specified for protection in the sector protection register can be protected from program and erase operations by issuing

the enable sector protection command. To enable sector protection using the software controlled method, the CS pin must first

be asserted, as it would be with any other command. Once the CS pin has been asserted, the appropriate four-byte command

sequence must be clocked in via the input pin (SI). After the last bit of the command sequence has been clocked in, the CS pin

must be deasserted, after which the sector protection will be enabled.

Table 6-1. Enable Sector Protection Command

Command

Byte 1

Byte 2

Byte 3

Byte 4

Enable Sector Protection

3DH

2AH

7FH

A9H

Figure 6-1. Enable Sector Protection

CS

Opcode

Byte 1

Opcode

Byte 2

Opcode

Byte 3

Opcode

Byte 4

SI

Each transition

represents 8 bits

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3597R–DFLASH–11/2012

6.1.2 Disable Sector Protection Command

To disable sector protection using the software controlled method, the CS pin must first be asserted, as it would be with any

other command. Once the CS pin has been asserted, the appropriate four-byte sequence for the disable sector protection

command must be clocked in via the input pin (SI). After the last bit of the command sequence has been clocked in, the CS pin

must be deasserted, after which the sector protection will be disabled. The WP pin must be in the deasserted state; otherwise,

the disable sector protection command will be ignored.

Table 6-2. Disenable Sector Protection Command

Command

Byte 1

Byte 2

Byte 3

Byte 4

Disable sector protection

3DH

2AH

7FH

9AH

Figure 6-2. Disable Sector Protection

CS

Opcode

Byte 1

Opcode

Byte 2

Opcode

Byte 3

Opcode

Byte 4

SI

Each transition

represents 8 bits

6.1.3 Various Aspects About Software Controlled Protection

Software controlled protection is useful in applications in which the WP pin is not or cannot be controlled by a host processor. In

such instances, the WP pin may be left floating (the WP pin is internally pulled high), and sector protection can be controlled

using the enable sector protection and disable sector protection commands.

If the device is power cycled, then the software controlled protection will be disabled. Once the device is powered up, the enable

sector protection command should be reissued if sector protection is desired and if the WP pin is not used.

7.

Hardware Controlled Protection

Sectors specified in the sector protection register for protection, and the sector protection register itself, can be protected from

program and erase operations by asserting the WP pin and keeping the pin in its asserted state. The sector protection register

and any sector specified for protection cannot be erased or reprogrammed as long as the WP pin is asserted. In order to modify

the sector protection register, the WP pin must be deasserted. If the WP pin is permanently connected to GND, then the content

of the sector protection register cannot be changed. If the WP pin is deasserted or permanently connected to V_CC, then the

content of the sector protection register can be modified.

The WP pin will override the software controlled protection method, but only for protecting the sectors. For example, if the

sectors were not previously protected by the enable sector protection command, then simply asserting the WP pin would enable

sector protection within the maximum specified t_WPEtime. However, when the WP pin is deasserted, sector protection would no

longer be enabled (after the maximum specified t_WPDtime) as long as the enable sector protection command was not issued

while the WP pin was asserted. If the enable sector protection command was issued before or while the WP pin was asserted,

then simply deasserting the WP pin would not disable sector protection. In this case, the disable sector protection command

would need to be issued while the WP pin is deasserted to disable sector protection. The disable sector protection command is

also ignored whenever the WP pin is asserted.

A noise filter is incorporated to help protect against spurious noise that may inadvertently assert or deassert the WP pin.

The table below details the sector protection status for various scenarios of the WP pin, the enable sector protection command,

and the disable sector protection command.

Figure 7-1. WP Pin and Protection Status

1

2

3

WP

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3597R–DFLASH–11/2012

Table 7-1. WP Pin and Protection Status

Sector

Protection

Status

Sector

Protection

Register

Time

Period

Enable Sector Protection

Disable Sector

Protection Command

WP Pin

Command

1

High

Command not issued previously

X

Disabled

Enabled

Read/write

–

Issue command

–

Issue command

2

3

Low

X

Enabled

Read only

Command issued during period 1 or 2

–

High

Not issued yet

issue command

–

Enabled

Disabled

Enabled

Read/write

Issue command

7.1

Sector Protection Register

The nonvolatile sector protection register specifies which sectors are to be protected or unprotected with either the software or

hardware controlled protection method. The sector protection register contains 64 bytes of data, in which byte locations 0

through 63 contain values that specify whether sectors 0 through 63 will be protected or unprotected. The sector protection

register is user modifiable, and must first be erased before it can be reprogrammed. Table 7-3 illustrates the format of the sector

protection register.

Table 7-2. Sector Protection Register

Sector Number

Protected

0 (0a, 0b)

1 to 63

FFH

See Table 7-3

Unprotected

00H

Table 7-3. Sector 0 (0a, 0b)

0a

0b

(Pages 0-7)

(Pages 8-127)

Data

Value

Bit 7, 6

00

Bit 5, 4

00

Bit 3, 2

xx

Bit 1, 0

xx

Sectors 0a, 0b unprotected

0xH

CxH

3xH

FxH

Protect sector 0a (pages 0-7)

11

00

xx

Protect sector 0b (pages 8-127)

Protect sectors 0a (pages 0-7), 0b (pages 8-127)⁽¹⁾

00

11

xx

11

xx

Note:

1. The default value for bytes 0 through 63 when shipped from Adesto^®is 00H.

x = don’t care.

7.1.1 Erase Sector Protection Register Command

In order to modify and change the value of the sector protection register, it must first be erased using the erase sector protection

register command.

To erase the sector protection register, the CS pin must first be asserted, as it would be with any other command. Once the CS

pin has been asserted, the appropriate four-byte opcode sequence must be clocked into the device via the SI pin. The four-byte

opcode sequence must start with 3DH, and be followed by 2AH, 7FH, and CFH. After the last bit of the opcode sequence has

been clocked in, the CS pin must be deasserted to initiate the internally self-timed erase cycle. The erasing of the sector

protection register should take place in a maximum time of t_PE, during which time the status register will indicate that the device

is busy. If the device is powered down before the completion of the erase cycle, then the contents of the sector protection

register cannot be guaranteed.

AT45DB321D [DATASHEET]

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3597R–DFLASH–11/2012

The sector protection register can be erased with sector protection enabled or disabled. Since the erased state (FFH) of each

byte in the sector protection register is used to indicate that a sector is specified for protection, leaving sector protection enabled

during the erasing of the register allows the protection scheme to be more effective in the prevention of accidental programming

or erasing of the device. If for some reason an erroneous program or erase command is sent to the device immediately after

erasing the sector protection register and before the register can be reprogrammed, then the erroneous program or erase

command will not be processed because all sectors will be protected.

Table 7-4. Erase Sector Protection Register Command

Command

Byte 1

Byte 2

Byte 3

Byte 4

Erase sector protection register

3DH

2AH

7FH

CFH

Figure 7-2. Erase Sector Protection Register

CS

Opcode

byte 1

Opcode

byte 2

Opcode

byte 3

Opcode

byte 4

SI

Each transition

represents 8 bits

7.1.2 Program Sector Protection Register Command

Once the sector protection register has been erased, it can be reprogrammed using the program sector protection register

command.

To program the sector protection register, the CS pin must first be asserted, and then the appropriate four-byte opcode

sequence must be clocked into the device via the SI pin. The four-byte opcode sequence must start with 3DH, and be followed

by 2AH, 7FH, and FCH. After the last bit of the opcode sequence has been clocked into the device, the data for the contents of

the sector protection register must be clocked in. As described in Section 7.1, the sector protection register contains 64 bytes of

data, and so 64 bytes must be clocked into the device. The first byte of data corresponds to sector 0, the second byte

corresponds to sector 1, and so on, with the last byte of data corresponding to sector 63.

After the last data byte has been clocked in, the CS pin must be deasserted to initiate the internally self-timed program cycle.

The programming of the sector protection register should take place in a maximum time of t_P, during which the status register

will indicate that the device is busy. If the device is powered down during the program cycle, the contents of the sector

protection register cannot be guaranteed.

If the proper number of data bytes is not clocked in before the CS pin is deasserted, then the protection status of the sectors

corresponding to the bytes not clocked in can not be guaranteed. For example, if only the first two bytes are clocked in instead

of the complete 62 bytes, then the protection status of the last 62 sectors cannot be guaranteed. Furthermore, if more than 64

bytes of data are clocked into the device, then the data will wrap back around to the beginning of the register. For instance, if 65

bytes of data are clocked in, then the 65^thbyte will be stored at byte location 0 of the sector protection register.

If a value other than 00H or FFH is clocked into a byte location of the sector protection register, then the protection status of the

sector corresponding to that byte location cannot be guaranteed. For example, if a value of 17H is clocked into byte location 2 of

the sector protection register, then the protection status of sector 2 cannot be guaranteed.

The sector protection register can be reprogrammed while sector protection is enabled or disabled. Being able to reprogram the

sector protection register with sector protection enabled allows the user to temporarily disable the sector protection of an

individual sector rather than disabling sector protection completely.

The program sector protection register command utilizes the internal SRAM buffer 1 for processing. Therefore, the contents of

buffer 1 will be altered from its previous state when this command is issued.

Table 7-5. Program Sector Protection Register Command

Command

Byte 1

Byte 2

Byte 3

Byte 4

Program sector protection register

3DH

2AH

7FH

FCH

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Figure 7-3. Program Sector Protection Register

CS

Opcode

byte 1

Opcode

byte 2

Opcode

byte 3

Opcode

byte 4

Data byte

n

Data byte

n + 1

Data byte

n + 63

SI

Each transition

represents 8 bits

7.1.3 Read Sector Protection Register Command

To read the sector protection register, the CS pin must first be asserted. Once the CS pin has been asserted, an opcode of 32H

and three dummy bytes must be clocked in via the SI pin. After the last bit of the opcode and dummy bytes has been clocked in,

any additional clock pulses on the SCK pins will result in data for the content of the sector protection register being output on the

SO pin. The first byte corresponds to sector 0 (0a, 0b), the second byte corresponds to sector 1, and the last byte (byte 64)

corresponds to sector 63. Once the last byte of the sector protection register has been clocked out, any additional clock pulses

will result in undefined data being output on the SO pin. The CS pin must be deasserted to terminate the read sector protection

register operation and put the output into a high-impedance state.

Table 7-6. Read Sector Protection Register Command

Command

Byte 1

Byte 2

Byte 3

Byte 4

Read sector protection register

32H

xxH

Note:

xx = Dummy byte

Figure 7-4. Read Sector Protection Register

CS

Opcode

X

SI

Data byte

n

Data byte

n + 1

Data byte

n + 63

SO

Each transition

represents 8 bits

7.1.4 Various Aspects About the Sector Protection Register

The sector protection register is subject to a limit of 10,000 erase/program cycles. Users are encouraged to carefully evaluate

the number of times the sector protection register will be modified during the course of the application’s life cycle. If the

application requires the sector protection register to be modified more than the specified limit of 10,000 cycles because the

application needs to temporarily unprotect individual sectors (sector protection remains enabled while the sector protection

register is reprogrammed), then the application will need to limit this practice. Instead, a combination of temporarily unprotecting

individual sectors, along with disabling sector protection completely, will need to be implemented by the application to ensure

that the limit of 10,000 cycles is not exceeded.

AT45DB321D [DATASHEET]

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8.

Security Features

8.1

Sector Lockdown

The device incorporates a sector lockdown mechanism that allows each individual sector to be permanently locked so that it

becomes read only. This is useful for applications that require the ability to permanently protect a number of sectors against

malicious attempts at altering program code or security information. Once a sector is locked down, it can never be erased or

programmed, and it can never be unlocked.

To issue the sector lockdown command, the CS pin must first be asserted, as it would be for any other command. Once the CS

pin has been asserted, the appropriate four-byte opcode sequence must be clocked into the device in the correct order. The

four-byte opcode sequence must start with 3DH, and be followed by 2AH, 7FH, and 30H. After the last byte of the command

sequence has been clocked in, three address bytes specifying any address within the sector to be locked down must be clocked

into the device. After the last address bit has been clocked in, the CS pin must be deasserted to initiate the internally self-timed

lockdown sequence.

The lockdown sequence should take place in a maximum time of t_P, during which the status register will indicate that the device

is busy. If the device is powered down before the completion of the lockdown sequence, then the lockdown status of the sector

cannot be guaranteed. In this case, it is recommended that the user read the sector lockdown register to determine the status of

the appropriate sector lockdown bits or bytes and reissue the sector lockdown command, if necessary.

Table 8-1. Sector Lockdown

Command

Byte 1

Byte 2

Byte 3

Byte 4

Sector lockdown

3DH

2AH

7FH

30H

Figure 8-1. Sector Lockdown

CS

Address

bytes

Opcode

byte 1

Opcode

byte 2

Opcode

byte 3

Opcode

byte 4

Address

bytes

Address

bytes

SI

Each transition

represents 8 bits

8.1.1 Sector Lockdown Register

The nonvolatile sector lockdown register contains 64 bytes of data, as shown below:

Table 8-2. Sector Lockdown Register

Sector Number

Locked

0 (0a, 0b)

1 to 63

FFH

See Table 8-3

Unlocked

00H

Table 8-3. Sector 0 (0a, 0b)

0a

0b

(Pages 0-7)

Bit 7, 6

(Pages 8-127)

Bit 5, 4

Data

Bit 3, 2

Bit 1, 0

00

Value

00H

C0H

30H

F0H

Sectors 0a, 0b unlocked

00

11

00

11

00

11

00

Sector 0a locked (pages 0-7)

Sector 0b locked (pages 8-127)

Sectors 0a, 0b locked (pages 0-127)

00

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3597R–DFLASH–11/2012

8.1.2 Reading the Sector Lockdown Register

The sector lockdown register can be read to determine which sectors in the memory array are permanently locked down. To

read the sector lockdown register, the CS pin must first be asserted. Once the CS pin has been asserted, an opcode of 35H and

three dummy bytes must be clocked into the device via the SI pin. After the last bit of the opcode and dummy bytes has been

clocked in, the data for the content of the sector lockdown register will be clocked out on the SO pin. The first byte corresponds

to sector 0 (0a, 0b) the second byte corresponds to sector 1, and the last byte (byte 16) corresponds to sector 15. After the last

byte of the sector lockdown register has been read, additional pulses on the SCK pin will simply result in undefined data being

output on the SO pin.

Deasserting the CS pin will terminate the read sector lockdown register operation and put the SO pin into a high-impedance

state.

Table 8-4 details the values read from the sector lockdown register.

Table 8-4. Sector Lockdown Register

Command

Byte 1

Byte 2

Byte 3

Byte 4

Read sector lockdown register

35H

xxH

Note:

xx = Dummy byte.

Figure 8-2. Read Sector Lockdown Register

CS

Opcode

X

SI

Data byte

n + 1

Data byte

n + 63

SO

n

Each transition

represents 8 bits

8.2

Security Register

The device contains a specialized security register that can be used for purposes such as unique device serialization or locked

key storage. The register is comprised of a total of 128 bytes that are divided into two portions. The first 64 bytes (byte locations

0 through 63) of the security register are allocated as a one-time user programmable space. Once these 64 bytes have been

programmed, they cannot be reprogrammed. The remaining 64 bytes of the register (byte locations 64 through 127) are factory

programmed by Adesto, and contain a unique value for each device. The factory programmed data are fixed and cannot be

changed.

Table 8-5. Security Register

Security Register Byte Number

62 63 64 65

One-time user programmable

0

1

· · ·

126

127

Data type

Adesto factory programmed

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3597R–DFLASH–11/2012

8.2.1 Programming the Security Register

The user programmable portion of the security register does not need to be erased before it is programmed.

To program the security register, the CS pin must first be asserted, and then the appropriate four-byte opcode sequence must

be clocked into the device in the correct order. The four-byte opcode sequence must start with 9BH, and be followed by 00H,

00H, and 00H. After the last bit of the opcode sequence has been clocked into the device, the data for the content of the 64-byte

user programmable portion of the security register must be clocked in.

After the last data byte has been clocked in, the CS pin must be deasserted to initiate the internally self-timed program cycle.

The programming of the security register should take place in a maximum time of t_P, during which the status register will indicate

that the device is busy. If the device is powered down during the program cycle, then the contents of the 64-byte user

programmable portion of the security register cannot be guaranteed.

If the full 64 bytes of data are not clocked in before the CS pin is deasserted, then the values of the byte locations not clocked in

cannot be guaranteed. For example, if only the first two bytes are clocked in instead of the complete 64 bytes, then the

remaining 62 bytes of the user programmable portion of the security register cannot be guaranteed. Furthermore, if more than

64 bytes of data are clocked into the device, then the data will wrap back around to the beginning of the register. For instance, if

65 bytes of data are clocked in, then the 65^thbyte will be stored at byte location 0 of the security register.

The user programmable portion of the security register can be programmed only once. Therefore, it is not possible to program

only the first two bytes of the register and then program the remaining 62 bytes at a later time.

The program security register command utilizes the internal SRAM buffer 1 for processing. Therefore, the contents of buffer 1

will be altered from its previous state when this command is issued.

Figure 8-3. Program Security Register

CS

Opcode

byte 1

Opcode

byte 2

Opcode

byte 3

Opcode

byte 4

Data byte

n

Data byte

n + 1

Data byte

n + x

SI

Each transition

represents 8 bits

8.2.2 Reading the Security Register

The security register can be read by first asserting the CS pin and then clocking in an opcode of 77H, followed by three dummy

bytes. After the last don't care bit has been clocked in, the content of the security register can be clocked out on the SO pin.

After the last byte of the security register has been read, additional pulses on the SCK pin will simply result in undefined data

being output on the SO pin.

Deasserting the CS pin will terminate the read security register operation and put the SO pin into a high-impedance state.

Figure 8-4. Read Security Register

CS

SI

Opcode

X

Data byte

n

Data byte

n + 1

Data byte

n + x

SO

Each transition

represents 8 bits

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3597R–DFLASH–11/2012

9.

Additional Commands

9.1

Main Memory Page to Buffer Transfer

A page of data can be transferred from the main memory to either buffer 1 or buffer 2. To start the operation for the standard

DataFlash page size (528 bytes), a one-byte opcode, 53H for buffer 1 or 55H for buffer 2, must be clocked into the device,

followed by three address bytes comprised of 1 don’t care bit, 13 page address bits (PA12 - PA0) that specify the page in main

memory that is to be transferred, and 10 don’t care bits. To perform a main memory page to buffer transfer for the binary page

size (512 bytes), the 53H opcode for buffer 1 or 55H opcode for buffer 2 must be clocked into the device, followed by three

address bytes consisting of 2 don’t care bits, 13 page address bits (A21 - A9) that specify the page in the main memory that is

to be transferred, and 9 don’t care bits. The CS pin must be low while toggling the SCK pin to load the opcode and the address

bytes from the input pin (SI). The transfer of page of data from the main memory to the buffer will begin when the CS pin

transitions from a low to a high state. During the transfer of a page of data (t_XFR), the status register can be read or the

RDY/BUSY can be monitored to determine whether the transfer has been completed.

9.2

Main Memory Page to Buffer Compare

A page of data in the main memory can be compared to the data in buffer 1 or buffer 2. To initiate the operation for a standard

DataFlash page size (528 bytes), a one-byte opcode, 60H for buffer 1 or 61H for buffer 2, must be clocked into the device,

followed by three address bytes consisting of 1 don’t care bit, 13 page address bits (PA12 - PA0) that specify the page in the

main memory that is to be compared to the buffer, and 10 don’t care bits. To start a main memory page to buffer compare for a

binary page size (512 bytes), the 60H opcode for buffer 1 or 61H opcode for buffer 2 must be clocked into the device, followed

by three address bytes consisting of 2 don’t care bits, 13 page address bits (A21 - A9) that specify the page in the main memory

that is to be compared to the buffer, and 9 don’t care bits. The CS pin must be low while toggling the SCK pin to load the opcode

and the address bytes from the input pin (SI). On the low-to-high transition of the CS pin, the data bytes in the selected main

memory page will be compared with the data bytes in buffer 1 or buffer 2. During this time (t_COMP), the status register and the

RDY/BUSY pin will indicate that the part is busy. On completion of the compare operation, bit 6 of the status register is updated

with the result of the compare.

9.3

Auto Page Rewrite

This mode is needed only when multiple bytes within a page or multiple pages of data are modified in a random fashion within a

sector. This mode is a combination of two operations:

1. Main memory page to buffer transfer, and

2. Buffer to main memory page program, with built-in erase.

A page of data is first transferred from the main memory to buffer 1 or buffer 2, and then the same data (from buffer 1 or buffer

2) are programmed back into their original page of main memory. To start the rewrite operation for the standard DataFlash page

size (528 bytes), a one-byte opcode, 58H for buffer 1 or 59H for buffer 2, must be clocked into the device, followed by three

address bytes comprised of 1 don’t care bit, 13 page address bits (PA12-PA0) that specify the page in main memory to be

rewritten, and 10 don’t care bits. To initiate an auto page rewrite for a binary page size (512 bytes), the 58H opcode for buffer 1

or 59H opcode for buffer 2 must be clocked into the device, followed by three address bytes consisting of 2 don’t care bits, 13

page address bits (A21 - A9) that specify the page in the main memory that is to be written, and 9 don’t care bits. When a low-

to-high transition occurs on the CS pin, the part will first transfer data from the page in main memory to a buffer and then

program the data from the buffer back into same page of main memory. The operation is internally self-timed, and should take

place in a maximum time of t_EP. During this time, the status register and the RDY/BUSY pin will indicate that the part is busy.

If a sector is programmed or reprogrammed sequentially page by page, then the programming algorithm shown in Figure 23-1,

page 41 is recommended. Otherwise, if multiple bytes in a page or several pages are programmed randomly in a sector, then

the programming algorithm shown in Figure 23-2, page 42 is recommended. Each page within a sector must be

updated/rewritten at least once within every 20,000 cumulative page erase/program operations in that sector. Please contact

Adesto for availability of devices that are specified to exceed the 20,000 cycle cumulative limit.

AT45DB321D [DATASHEET]

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3597R–DFLASH–11/2012

9.4

Status Register Read

The status register can be used to determine the device’s ready/busy status, page size, a main memory page to buffer compare

operation result, the sector protection status, or the device density. The status register can be read at any time, including during

an internally self-timed program or erase operation. To read the status register, the CS pin must be asserted and the opcode of

D7H must be loaded into the device. After the opcode is clocked in, the one-byte status register will be clocked out on the output

pin (SO), starting with the next clock cycle. The data in the status register, starting with the msb (bit 7), will be clocked out on the

SO pin during the next eight clock cycles. After the one byte of the status register has been clocked out, the sequence will

repeat itself (as long as CS remains low and SCK is being toggled). The data in the status register is constantly updated, and so

each repeating sequence will output new data.

Ready/busy status is indicated using bit 7 of the status register. If bit 7 is a one, then the device is not busy and is ready to

accept the next command. If bit 7 is a zero, then the device is in a busy state. Since the data in the status register is constantly

updated, the user must toggle the SCK pin to check the ready/busy status.

There are several operations that can cause the device to be in a busy state:

●

Main memory page to buffer transfer

Main memory page to buffer compare

Buffer to main memory page program

Main memory page program through buffer

Page erase, block erase, sector erase, and chip erase

Auto page rewrite

The result of the most recent main memory page to buffer compare operation is indicated using bit 6 of the status register. If bit

6 is a zero, then the data in the main memory page matches the data in the buffer. If bit 6 is a one, then at least one bit of the

data in the main memory page does not match the data in the buffer.

Bit 1 of the status register is used to provide information to the user whether sector protection has been enabled or disabled,

either by the software-controlled or hardware-controlled method. A logic one indicates that sector protection has been enabled,

and logic zero indicates that sector protection has been disabled.

Bit 0 o the status register indicates whether the page size of the main memory array is configured for a “power of two” binary

page size (512 bytes) or a standard DataFlash page size (528 bytes). If bit 0 is a one, then the page size is set to 512 bytes. If

bit 0 is a zero, then the page size is set to 528 bytes.

The device density is indicated using bits 5, 4, 3, and 2 of the status register. For the AT45DB321D, the four bits are 1101. The

decimal value of these four binary bits does not equate to the device density — the four bits represent a combinational code

relating to differing densities of DataFlash devices. The device density is not the same as the density code indicated in the

JEDEC device ID information. The device density is provided only for backward compatibility.

Table 9-1. Status Register Format

Bit 7

Bit 6

Bit 5

Bit 4

Bit 3

Bit 2

Bit 1

Bit 0

RDY/BUSY

COMP

1

0

1

Protect

Page size

AT45DB321D [DATASHEET]

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3597R–DFLASH–11/2012

10. Deep Power-down

After an initial power-up, the device will default to standby mode. The deep power-down command allows the device to enter

into the lowest power-consumption mode. To enter the deep power-down mode, the CS pin must first be asserted. Once the CS

pin has been asserted, an opcode of B9H must be clocked in via the input pin (SI). After the last bit of the command has been

clocked in, the CS pin must be deasserted to initiate deep power-down operation. After the CS pin is deasserted, the device will

enter the deep power-down mode within a maximum time of t_EDPD. Once the device has entered the deep power-down mode, all

instructions are ignored, except for the resume from deep power-down commands.

Table 10-1. Deep Power-down

Command

Opcode

Deep power-down

B9H

Figure 10-1. Deep Power-down

CS

Opcode

SI

Each transition

represents 8 bits

10.1 Resume from Deep Power-down

The resume from deep power-down command takes the device out of the deep power-down mode and returns it to the normal

standby mode. To resume from deep power-down mode, the CS pin must first be asserted, and an opcode of ABH must be

clocked in via the input pin (SI). After the last bit of the command has been clocked in, the CS pin must be deasserted to

terminate the deep power-down mode. After the CS pin is deasserted, the device will return to the normal standby mode within

a maximum time of t_RDPD. The CS pin must remain high during the t_RDPDtime before the device can receive any commands.

After resuming from deep power-down, the device will return to the normal standby mode.

Table 10-2. Resume from Deep Power-down

Command

Opcode

Resume from deep power-down

ABH

Figure 10-2. Resume from Deep Power-Down

CS

Opcode

SI

Each transition

represents 8 bits

AT45DB321D [DATASHEET]

20

3597R–DFLASH–11/2012

11. “Power of Two” Binary Page Size Option

“Power of two” binary page size configuration register is a user programmable, nonvolatile register that allows the page size of

the main memory to be configured for binary page size (512 bytes) or standard DataFlash page size (528 bytes). The power of

two page size is a one-time programmable configuration register, and once the device is configured for power of two page size,

it cannot be reconfigured again. The devices are initially shipped with the page size set to 528 bytes. The user has the option of

ordering binary page size (512-byte) devices from the factory. For details, please refer to Section 24., “Ordering Information” on

page 43.

For the binary power of two page size to become effective, the following steps must be followed:

1. Program the one-time programmable configuration resister using the opcode sequence: 3DH, 2AH, 80H, and A6H

(see Section 11.1).

2. Power cycle the device (i.e., power down and power up again).

3. The page for the binary page size can now be programmed.

If the above steps to set the page size prior to page programming are not followed, incorrect data during a read operation may

be encountered.

11.1 Programming the Configuration Register

To program the configuration register for power of two binary page size, the CS pin must first be asserted, as it would be with

any other command. Once the CS pin has been asserted, the appropriate four-byte opcode sequence must be clocked into the

device in the correct order. The four-byte opcode sequence must start with 3DH, followed by 2AH, 80H, and A6H. After the last

bit of the opcode sequence has been clocked in, the CS pin must be deasserted to initiate the internally self-timed program

cycle. The programming of the configuration register should take place in a maximum time of t_P, during which time the status

register will indicate that the device is busy. The device must be power cycled after the completion of the program cycle to set

the power of two page size. If the device is powered-down before the completion of the program cycle, then setting the

configuration register cannot be guaranteed. However, the user should check bit 0 of the status register to see whether the

page size was configured for binary page size or not. If not, the command can be issued again.

Table 11-1. Programming the Configuration Register

Command

Byte 1

Byte 2

Byte 3

Byte 4

Power of two page size

3DH

2AH

80H

A6H

Figure 11-1. Erase Sector Protection Register

CS

Opcode

byte 1

Opcode

byte 2

Opcode

byte 3

Opcode

byte 4

SI

Each transition

represents 8 bits

12. Manufacturer and Device ID Read

Identification information can be read from the device to enable systems to electronically query and identify the device while it is

in the system. The identification method and the command opcode comply with the JEDEC standard for “Manufacturer and

Device ID Read Methodology for SPI Compatible Serial Interface Memory Devices.” The type of information that can be read

from the device includes the JEDEC-defined manufacturer ID, the vendor-specific device ID, and the vendor-specific extended

device information.

To read the identification information, the CS pin must first be asserted, and then the opcode of 9FH must be clocked into the

device. After the opcode has been clocked in, the device will begin outputting the identification data on the SO pin during the

subsequent clock cycles. The first byte to be output will be the manufacturer ID, followed by two bytes of device ID information.

The fourth byte output will be the extended device information string length, which will be 00H to indicate that no extended

AT45DB321D [DATASHEET]

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3597R–DFLASH–11/2012

device information follows. As indicated in the JEDEC standard, reading the extended device information string length and any

subsequent data is optional.

Deasserting the CS pin will terminate the manufacturer and device ID read operation and put the SO pin into a high-impedance

state. The CS pin can be deasserted at any time, and does not require that a full byte of data be read.

12.1 Manufacturer and Device ID Information

12.1.1 Byte 1 – Manufacturer ID

JEDEC Assigned Code

Hex

Value

Bit 7

Bit 6

Bit 5

Bit 4

Bit 3

Bit 2

Bit 1

Bit 0

1FH

0

1

Manufacturer ID

1FH = Adesto

12.1.2 Byte 2 – Device ID (Part 1)

Family Code

Hex

Density Code

Family code

Density code

001 = DataFlash

00111 = 32Mb

Value

Bit 7

Bit 6

Bit 5

Bit 4

Bit 3

Bit 2

Bit 1

Bit 0

27H

0

1

0

1

12.1.3 Byte 3 – Device ID (Part 2)

MLC Code

Hex

Product Version Code

MLC code

000 = 1-bit/cell technology

00001 = Second version

Value

Bit 7

Bit 6

Bit 5

Bit 4

Bit 3

Bit 2

Bit 1

Bit 0

00H

0

1

Product version

12.1.4 Byte 4 – Extended Device Information String Length

Byte Count

Hex

Value

Bit 7

Bit 6

Bit 5

Bit 4

Bit 3

Bit 2

Bit 1

Bit 0

00H

0

Byte count

00H = 0 bytes of Information

CS

9FH

SI

Opcode

1FH

27H

00H

01H

Data

SO

Manufacturer ID

Byte 1

Device ID

Byte 2

Device ID

Byte 3

Extended

device

Extended

device

Extended

device

information

string length

information

Byte x

information

Byte x + 1

Each transition

represents 8 bits

This information would only be output

if the extended device information string length

value was something other than 00H

Note:

Based on JEDEC publication 106 (JEP106), manufacturer ID data can be comprised of any number of bytes.

Some manufacturers may have manufacturer ID codes that are two, three, or even four bytes long, with the first

byte(s) in the sequence being 7FH. A system should detect code 7FH as a “continuation code” and continue to

read manufacturer ID bytes. The first non-7FH byte would signify the last byte of manufacturer ID data. For Adesto

(and some other manufacturers), the manufacturer ID data is comprised of only one byte.

AT45DB321D [DATASHEET]

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3597R–DFLASH–11/2012

12.2 Operation Mode Summary

The commands described previously can be grouped into four different categories to make clearer which commands can be

executed at what times.

Group A commands consist of:

1. Main memory page read

2. Continuous array read

3. Read sector protection register

4. Read sector lockdown register

5. Read security register

Group B commands consist of:

1. Page erase

2. Block erase

3. Sector erase

4. Chip erase

5. Main memory page to buffer 1 (or 2) transfer

6. Main memory page to buffer 1 (or 2) compare

7. Buffer 1 (or 2) to main memory page program, with built-in erase

8. Buffer 1 (or 2) to main memory page program, without built-in erase

9. Main memory page program through buffer 1 (or 2)

10. Auto page rewrite

Group C commands consist of:

1. Buffer 1 (or 2) read

2. Buffer 1 (or 2) write

3. Status register read

4. Manufacturer and device ID read

Group D commands consist of:

1. Erase sector protection register

2. Program sector protection register

3. Sector lockdown

4. Program security register

If a group A command is in progress (not fully completed), then another command from group A, B, C, or D should not be

started. However, during the internally self-timed portion of group B commands, any command in group C can be executed. The

group B commands using buffer 1 should use group C commands using buffer 2, and vice versa. Finally, during the internally

self-timed portion of a group D command, only the status register read command should be executed.

AT45DB321D [DATASHEET]

23

3597R–DFLASH–11/2012

13. Command Tables

Table 13-1. Read Commands

Command

Opcode

D2H

E8H

Main memory page read

Continuous array read (legacy command)

Continuous array read (low frequency)

Continuous array read (high frequency)

Buffer 1 read (low frequency)

Buffer 2 read (low frequency)

Buffer 1 read

03H

0BH

D1H

D3H

D4H

D6H

Buffer 2 read

Table 13-2. Program and Erase Commands

Command

Opcode

Buffer 1 write

84H

Buffer 2 write

87H

Buffer 1 to main memory page program, with built-in erase

Buffer 2 to main memory page program, with built-in erase

Buffer 1 to main memory page program, without built-in erase

Buffer 2 to main memory page program, without built-in erase

Page erase

83H

86H

88H

89H

81H

Block erase

50H

Sector erase

7CH

Chip erase

C7H, 94H, 80H, 9AH

Main memory page program through buffer 1

Main memory page program through buffer 2

82H

85H

Table 13-3. Protection and Security Commands

Command

Opcode

3DH + 2AH + 7FH + A9H

3DH + 2AH + 7FH + 9AH

3DH + 2AH + 7FH + CFH

3DH + 2AH + 7FH + FCH

32H

Enable sector protection

Disable sector protection

Erase sector protection register

Program sector protection register

Read sector protection register

Sector lockdown

3DH + 2AH + 7FH + 30H

35H

Read sector lockdown register

Program security register

Read security register

9BH + 00H + 00H + 00H

77H

AT45DB321D [DATASHEET]

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3597R–DFLASH–11/2012

Table 13-4. Additional Commands

Command

Opcode

53H

Main memory page to buffer 1 transfer

Main memory page to buffer 2 transfer

Main memory page to buffer 1 compare

Main memory page to buffer 2 compare

Auto page rewrite through buffer 1

Auto page rewrite through buffer 2

Deep power-down

55H

60H

61H

58H

59H

B9H

ABH

D7H

9FH

Resume from deep power-down

Status register read

Manufacturer and device ID read

Table 13-5. Legacy Commands⁽¹⁾

Command

Opcode

54H

Buffer 1 read

Buffer 2 read

56H

Main memory page read

Continuous array read

Status register read

52H

68H

57H

Note:

1. These legacy commands are not recommended for new designs.

AT45DB321D [DATASHEET]

25

3597R–DFLASH–11/2012

Table 13-6. Detailed Bit-level Addressing Sequence for Binary Page Size (512 Bytes)

Page Size = 512-bytes

Address Byte

Additional

Don’t Care

Bytes

Opcode

03h

0Bh

50h

53h

55h

58h

59h

60h

61h

77h

7Ch

81h

82h

83h

84h

85h

86h

87h

88h

89h

9Fh

B9h

ABh

D1h

D2h

D3h

D4h

D6h

D7h

E8h

Opcode

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

N/A

1

N/A

4

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

N/A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

x

A

N/A

1

x

1

N/A

4

x

A

Note:

x = Don’t care.

AT45DB321D [DATASHEET]

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3597R–DFLASH–11/2012

Table 13-7. Detailed Bit-level Addressing Sequence for Standard DataFlash Page Size (528 Bytes)

Page Size = 528-bytes

Address Byte

Additional

Don’t Care

Bytes

Opcode

03h

0Bh

50h

53h

55h

58h

59h

60h

61h

77h

7Ch

81h

82h

83h

84h

85h

86h

87h

88h

89h

9Fh

B9h

ABh

D1h

D2h

D3h

D4h

D6h

D7h

E8h

Opcode

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

B

x

B

x

B

x

B

x

B

x

B

x

B

x

B

x

B

x

B

x

N/A

1

N/A

4

P

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

B

x

B

x

B

x

B

x

B

x

B

x

B

x

B

x

B

x

B

x

B

x

B

x

B

x

B

x

B

x

B

x

B

x

B

x

B

x

B

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

B

x

B

x

B

x

B

x

B

x

B

x

B

x

B

x

B

x

B

x

P

x

N/A

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

P

x

B

P

x

P

x

B

N/A

1

x

1

N/A

4

x

P

B

Note:

P = Page address bit.

B = Byte/buffer address bit.

x = Don’t care.

AT45DB321D [DATASHEET]

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3597R–DFLASH–11/2012

14. Power-on/Reset State

When power is first applied to the device, or when recovering from a reset condition, the device will default to Mode 3. In

addition, the output pin (SO) will be in a high-impedance state, and a high-to-low transition on the CS pin will be required to start

a valid instruction. The mode (Mode 3 or Mode 0) will be automatically selected on every falling edge of CS by sampling the

inactive clock state.

14.1 Initial Power-up/Reset Timing Restrictions

At power-up, the device must not be selected until the supply voltage reaches V_CC(min.) and a further delay of t_VCSL. During

power-up, the internal power-on reset circuitry keeps the device in reset mode until V_CCrises above the power-on reset

threshold value (V_POR). At this time, all operations are disabled and the device does not respond to any commands. After power-

up is applied and V_CCis at the minimum operating voltage, V_CC(min.), the t_VCSLdelay is required before the device can be

selected in order to perform a read operation.

Similarly, the t_PUWdelay is required after V_CCrises above the power-on reset threshold value (V_POR) before the device can

perform a write (program or erase) operation. After initial power-up, the device will default to standby mode.

Table 14-1. Initial Power-up/Reset Timing Restrictions

Symbol

t_VCSL

Parameter

Min

Typ

Max

Unit

μs

V_CC(min.) to chip select low

Power-up device delay before write allowed

Power-on reset voltage

70

t_PUW

20

ms

V

V_POR

1.5

2.5

15. System Considerations

The RapidS serial interface is controlled by the SCK clock, SI serial input, and CS chip select pins. These signals must rise and

fall monotonically and be free from noise. Excessive noise or ringing on these pins can be misinterpreted as multiple edges and

cause improper operation of the device. The PC board traces must be kept to a minimum distance or appropriately terminated

to ensure proper operation. If necessary, decoupling capacitors can be added on these pins to provide filtering against noise

glitches.

As system complexity continues to increase, voltage regulation is becoming more important. A key element of any voltage

regulation scheme is its current sourcing capability. Like all flash memories, the peak current for a DataFlash device occurs

during the programming and erase operation. The regulator needs to supply this peak current requirement. An under-specified

regulator can cause current starvation. Besides increasing system noise, current starvation during programming or erase can

lead to improper operation and possible data corruption.

AT45DB321D [DATASHEET]

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3597R–DFLASH–11/2012

16. Electrical Specifications

*Notice:

Stresses beyond those listed under “Absolute Maximum

Ratings” may cause permanent damage to the device. The

"Absolute Maximum Ratings" are stress ratings only, and

functional operation of the device at these or any other

conditions beyond those indicated in the operational sections

of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability. Voltage Extremes referenced in the "Absolute

Maximum Ratings" are intended to accommodate short

duration undershoot/overshoot conditions and does not imply

or guarantee functional device operation at these levels for any

extended period of time.

Temperature under bias . . . . . . . . -55C to +125C

Storage temperature . . . . . . . . . . . -65C to +150C

All input voltages (except V_CCbut including NC pins)

with respect to ground . . . . . . . . . . . -0.6V to +6.25V

All output voltages

with respect to ground . . . . . . . . -0.6V to V_CC+ 0.6V

Table 16-1. DC and AC Operating Range

AT45DB321D (2.5V Version)

-40°C to 85°C

AT45DB321D

-40C to 85C

2.7V to 3.6V

Operating temperature (case)

V_CCpower supply

2.5V to 3.6V

Table 16-2. DC Characteristics

Symbol

Parameter

Condition

Min

Typ

Max

Unit

CS, RESET, WP = V_IH,

all inputs at CMOS levels

I_DP

Deep power-down current

15

25

7

25

μA

CS, RESET, WP = V_IH,

all inputs at CMOS levels

I_SB

Standby current

50

10

12

14

15

17

μA

mA

f = 20MHz; I_OUT= 0mA;

V_CC= 3.6V

f = 33MHz; I_OUT= 0mA;

8

V_CC= 3.6V

(1)

I_CC1

Active current, read operation

f = 50MHz; I_OUT= 0mA;

10

11

12

V_CC= 3.6V

f = 66MHz; I_OUT= 0mA;

V_CC= 3.6V

Active current, program/erase

operation

I_CC2

V_CC= 3.6V

I_LI

Input load current

Output leakage current

Input low voltage

V_IN= CMOS levels

V_I/O= CMOS levels

1

μA

V

I_LO

V_IL

V_IH

V_OL

V_OH

V_CC× 0.3

Input high voltage

Output low voltage

Output high voltage

V_CC× 0.7

V_CC- 0.2V

V

I_OL= 1.6mA; V_CC= 2.7V

0.4

V

I_OH= -100μA

V

Notes: 1. I_CC1during a buffer read is 20mA, maximum, @ 20MHz.

2. All inputs (SI, SCK, CS#, WP#, and RESET#) are guaranteed by design to be 5V tolerant.

AT45DB321D [DATASHEET]

29

3597R–DFLASH–11/2012

Table 16-3. AC Characteristics – RapidS / Serial Interface

AT45DB321D

(2.5V Version)

AT45DB321D

Typ

Symbol

f_SCK

Parameter

Min

Typ

Max

50

Min

Max

66

Unit

MHz

SCK frequency

f_CAR1

SCK frequency for continuous array read

50

66

SCK frequency for continuous array read

(Low frequency)

f_CAR2

33

MHz

t_WH

t_WL

SCK high time

6.8

0.1

50

5

6.8

0.1

50

5

ns

SCK low time

(1)

t_SCKR

SCK rise time, peak-to-peak (slew rate)

SCK fall time, peak-to-peak (slew rate)

Minimum CS high time

CS setup time

V/ns

ns

(1)

t_SCKF

t_CS

t_CSS

t_CSH

t_CSB

t_SU

ns

CS hold time

5

ns

CS high to RDY/BUSY low

Data in setup time

100

ns

2

3

0

2

3

0

ns

t_H

Data in hold time

ns

t_HO

Output hold time

ns

t_DIS

Output disable time

27

35

8

27

35

6

ns

t_V

Output valid

ns

t_WPE

t_WPD

t_EDPD

t_RDPD

t_XFR

t_comp

WP low to protection enabled

WP high to protection disabled

CS high to deep power-down mode

CS high to standby mode

Page to buffer transfer time

Page to buffer compare time

1

μs

1

μs

3

μs

35

300

35

300

μs

Page erase and programming time

(512-/528-bytes)

t_EP

17

40

17

40

ms

t_P

Page programming time (512/528 bytes)

Page erase time (512/528 bytes)

Block erase time (4,096/4,224 bytes)

Sector erase time (131,072/135,168 bytes)

Chip erase time

3

15

6

35

3

15

6

35

ms

s

t_PE

t_BE

t_SE

t_CE

t_RST

t_REC

45

100

5

45

100

5

1.6

TBD

1.6

TBD

s

RESET pulse width

10

μs

RESET recovery time

1

AT45DB321D [DATASHEET]

30

3597R–DFLASH–11/2012

17. Input Test Waveforms and Measurement Levels

2.4V

AC

Driving

Levels

1.5V

Measurement

Level

0.45V

t_R, t_F< 2ns (10% to 90%)

18. Output Test Load

Device

under

test

30pF

19. AC Waveforms

Six different timing waveforms are shown on page 31. Waveform 1 shows the SCK signal being low when CS makes a high-to-

low transition, and waveform 2 shows the SCK signal being high when CS makes a high-to-low transition. In both cases, output

SO becomes valid while the SCK signal is still low (SCK low time is specified as t_WL). Timing waveforms 1 and 2 conform to

RapidS serial interface, but for frequencies up to 66MHz. Waveforms 1 and 2 are compatible with SPI Mode 0 and SPI Mode 3,

respectively.

Waveform 3 and waveform 4 illustrate general timing diagram for RapidS serial interface. These are similar to waveform 1 and

waveform 2, except that output SO is not restricted to become valid during the t_WLperiod. These timing waveforms are valid

over the full frequency range (maximum frequency = 66MHz) of the RapidS serial case.

Table 19-1. Waveform 1 – SPI Mode 0 Compatible (for frequencies up to 66MHz)

t_CS

CS

t_CSS

t_WH

t_WL

t_CSH

SCK

SO

SI

t_V

t_HO

t_DIS

High impedance

t_SU

Valid out

t_H

Valid in

AT45DB321D [DATASHEET]

31

3597R–DFLASH–11/2012

Table 19-2. Waveform 2 – SPI Mode 3 Compatible (for frequencies up to 66MHz)

t_CS

CS

t_CSS

t_WL

t_WH

t_CSH

SCK

SO

t_V

t_HO

t_DIS

High Z

High impedance

Valid out

t_H

t_SU

Valid in

SI

Table 19-3. Waveform 3 – RapidS Mode 0 (F_MAX= 66MHz)

t_CS

CS

t_CSS

t_WH

t_WL

t_CSH

SCK

SO

SI

t_V

t_HO

t_DIS

High impedance

t_SU

High impedance

Valid out

t_H

Valid in

Table 19-4. Waveform 4 – RapidS Mode 3 (F_MAX= 66MHz)

t_CS

CS

t_CSS

t_WL

t_WH

t_CSH

SCK

SO

t_V

t_HO

t_DIS

High Z

High impedance

Valid out

t_H

t_SU

Valid in

SI

AT45DB321D [DATASHEET]

32

3597R–DFLASH–11/2012

19.1 Utilizing the RapidS Function

To take advantage of the RapidS function's ability to operate at higher clock frequencies, a full clock cycle must be used to

transmit data back and forth across the serial bus. The DataFlash device is designed to always clock its data out on the falling

edge of the SCK signal and clock data in on the rising edge of SCK.

For full clock cycle operation to be achieved when the DataFlash device is clocking data out on the falling edge of SCK, the host

controller should wait until the next falling edge of SCK to latch the data in. Similarly, the host controller should clock its data out

on the rising edge of SCK in order to give the DataFlash device a full clock cycle to latch the incoming data in on the next rising

edge of SCK.

Figure 19-1. RapidS Mode

Slave CS

1

8

1

8

1

2

3

4

5

6

7

2

3

4

5

6

7

SCK

MOSI

MISO

B

E

A

C

D

MSB

LSB

BYTE-MOSI

H

G

I

F

MSB

LSB

BYTE-SO

MOSI = Master Out, Slave In

MISO = Master In, Slave Out

The Master is the host controller and the Slave is the DataFlash

The Master always clocks data out on the rising edge of SCK and always clocks data in on the falling edge of SCK.

The Slave always clocks data out on the falling edge of SCK and always clocks data in on the rising edge of SCK.

A. Master clocks out first bit of BYTE-MOSI on the rising edge of SCK

B. Slave clocks in first bit of BYTE-MOSI on the next rising edge of SCK

C. Master clocks out second bit of BYTE-MOSI on the same rising edge of SCK

D. Last bit of BYTE-MOSI is clocked out from the Master

E. Last bit of BYTE-MOSI is clocked into the slave

F. Slave clocks out first bit of BYTE-SO

G. Master clocks in first bit of BYTE-SO

H. Slave clocks out second bit of BYTE-SO

I. Master clocks in last bit of BYTE-SO

Figure 19-2. Reset Timing

CS

t

CSS

REC

SCK

RESET

t

RST

High impedance

SO (OUTPUT)

SI (INPUT)

Note:

The CS signal should be in the high state before the RESET signal is deasserted.

AT45DB321D [DATASHEET]

33

3597R–DFLASH–11/2012

Figure 19-3. Command Sequence for Read/Write Operations for a 512-Byte Page Size

(Except Status Register Read, Manufacturer, and Device ID Read)

SI (INPUT)

CMD

8-bits

X X X X X X X X X X X X X X X X

X X X X X X X X

LSB

MSB

Don’t care

bits

Page address

(A21 - A9)

Byte/Buffer address

(A8 - A0/BFA8 - BFA0)

Figure 19-4. Command Sequence for Read/Write Operations for a 528-Byte Page Size

(Except Status Register Read, Manufacturer, and Device ID Read)

SI (INPUT)

CMD

8-bits

X X X XX X X X X X X X X X X X

X X X X X X X X

LSB

MSB

1 Don’t care

Page address

(PA12 - PA0)

Byte/Buffer address

(BA9 - BA0/BFA9 - BFA0)

bit

20. Write Operations

The following block diagram and waveforms illustrate the various write sequences available.

Figure 20-1. Block Diagram

Flash Memory Array

Page (512-/528-bytes)

Buffer 1 to

Main Memory

Page Program

Buffer 2 to

Main Memory

Page Program

Buffer 1 (512-/528-bytes)

Buffer 2 (512-/528-bytes)

Buffer 1

WRITE

Buffer 2

WRITE

I/O Interface

SI

AT45DB321D [DATASHEET]

34

3597R–DFLASH–11/2012

Figure 20-2. Buffer Write

Completes writing into selected buffer

CS

Binary Page Size

15 don't care + BFA8-BFA0

SI (INPUT)

n

n+1

CMD

X

BFA7-0

X···X, BFA9-8

Last byte

Figure 20-3. Buffer to Main Memory Page Program (Data from Buffer Programmed into Flash Page)

Starts self-timed erase/program operation

CS

Binary Page Size

A21-A9 + 9 don't care bits

SI (INPUT)

XXXX XX

CMD

PA12-6

PA5-0, XX

Each transition

represents 8 bits

n = 1st byte read

n+1 = 2nd byte read

21. Read Operations

The following block diagram and waveforms illustrate the various read sequences available.

Figure 21-1. Block Diagram

Flash Memory Array

Page (512-/528-bytes)

Main Memory

Page to

Main Memory

Page to

Buffer 2

Buffer 1

Buffer 1 (512-/528-bytes)

Buffer 2 (512-/528-bytes)

Buffer 1

Read

Main Memory

Page Read

Buffer 2

Read

I/O Interface

SO

AT45DB321D [DATASHEET]

35

3597R–DFLASH–11/2012

Figure 21-2. Main Memory Page Read

CS

Address for Binary Page Size

A15-A8

A21-A16

A7-A0

SI (INPUT)

PA12-6

BA7-0

X

PA5-0, BA9-8

CMD

4 Dummy bytes

SO (OUTPUT)

n

n+1

Figure 21-3. Main Memory Page to Buffer Transfer (Data from Flash Page Read into Buffer)

Starts reading page data into buffer

CS

Binary Page Size

A21-a9 + 9 Don't care bits

CMD

PA12-6

SI (INPUT)

PA5-0, XX

XXXX XXXX

SO (OUTPUT)

Figure 21-4. Buffer Read

CS

Binary Page Size

15 Don't care + Bfa8-bfa0

CMD

X

X..X, BFA9-8

BFA7- 0

X

SI (INPUT)

No dummy byte (opcodes D1H and D3H)

1 dummy byte (opcodes D4H and D6H)

n

n+1

SO (OUTPUT)

Each transition

represents 8 bits

AT45DB321D [DATASHEET]

36

3597R–DFLASH–11/2012

22. Detailed Bit-level Read Waveform –

RapidS Serial Interface Mode 0/Mode 3

Figure 22-1. Continuous Array Read (Legacy Opcode E8H)

CS

0

1

2

3

4

5

6

7

8

9

10 11 12

29 30 31 32 33 34

62 63 64 65 66 67 68 69 70 71 72

SCK

SI

OPCODE

Address bits

32 Don't care bits

1

MSB

1

0

1

0

A

MSB

A

X

MSB

X

Data byte 1

High-impedance

D

MSB

D

MSB

D

SO

Bit 0 of

Page N+1

Bit 4095/4223

of Page N

Figure 22-2. Continuous Array Read (Opcode 0BH)

CS

0

1

2

3

4

5

6

7

8

9

10 11 12

29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48

SCK

SI

OPCODE

Address bits a21 - a0

Don't care

X

0

MSB

0

1

0

1

A

MSB

A

X

MSB

X

Data byte 1

High-impedance

D

MSB

D

MSB

D

SO

Figure 22-3. Continuous Array Read (Low Frequency: Opcode 03H)

CS

0

1

2

3

4

5

6

7

8

9

10 11 12

29 30 31 32 33 34 35 36 37 38 39 40

SCK

SI

OPCODE

Address bits a21-a0

0

MSB

0

1

A

MSB

A

Data byte 1

High-impedance

D

MSB

D

MSB

D

SO

AT45DB321D [DATASHEET]

37

3597R–DFLASH–11/2012

Figure 22-4. Main Memory Page Read (Opcode: D2H)

CS

0

1

2

3

4

5

6

7

8

9

10 11 12

29 30 31 32 33 34

62 63 64 65 66 67 68 69 70 71 72

SCK

SI

OPCODE

Address bits

32 don't care bits

1

MSB

1

0

1

0

1

0

A

MSB

A

X

MSB

X

Data byte 1

High-impedance

D

MSB

D

MSB

D

SO

Figure 22-5. Buffer Read (Opcode D4H or D6H)

CS

0

1

2

3

4

5

6

7

8

9

10 11 12

29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48

SCK

Address bits

Binary page size = 15 don't care + BFA8-BFA0

Standard dataflash page size =

14 don't care + BFA9-BFA0

Don't care

OPCODE

1

MSB

1

0

1

0

1

0

X

MSB

X

A

X

MSB

X

SI

Data byte 1

High-impedance

D

MSB

D

MSB

D

SO

Figure 22-6. Buffer Read (Low Frequency: Opcode D1H or D3H)

CS

0

1

2

3

4

5

6

7

8

9

10 11 12

29 30 31 32 33 34 35 36 37 38 39 40

SCK

Address bits

Binary page size = 15 don't care + BFA8-BFA0

Standard Dataflash page size =

14 don't care + BFA9-BFA0

OPCODE

1

MSB

1

0

1

0

1

X

MSB

X

A

SI

Data byte 1

High-impedance

D

MSB

D

MSB

D

SO

AT45DB321D [DATASHEET]

38

3597R–DFLASH–11/2012

Figure 22-7. Read Sector Protection Register (Opcode 32H)

CS

0

1

2

3

4

5

6

7

8

9

10 11 12

29 30 31 32 33 34 35 36 37 38 39 40

SCK

SI

OPCODE

Don't care

0

MSB

0

1

0

1

0

X

MSB

X

Data byte 1

High-impedance

D

MSB

D

MSB

SO

Figure 22-8. Read Sector Lockdown Register (Opcode 35H)

CS

0

1

2

3

4

5

6

7

8

9

10 11 12

29 30 31 32 33 34 35 36 37 38 39 40

SCK

SI

OPCODE

Don't care

0

MSB

0

1

0

1

0

1

X

MSB

X

Data byte 1

High-impedance

D

MSB

D

MSB

SO

Figure 22-9. Read Security Register (Opcode 77H)

CS

0

1

2

3

4

5

6

7

8

9

10 11 12

29 30 31 32 33 34 35 36 37 38 39 40

SCK

SI

OPCODE

Don't care

0

MSB

1

0

1

X

MSB

X

Data byte 1

High-impedance

D

MSB

D

MSB

SO

AT45DB321D [DATASHEET]

39

3597R–DFLASH–11/2012

Figure 22-10.Status Register Read (Opcode D7H)

CS

0

1

2

3

4

5

6

7

8

9

10 11 12 13 14 15 16 17 18 19 20 21 22 23 24

SCK

SI

OPCODE

1

MSB

1

0

1

0

1

Status register data

High-impedance

D

MSB

D

MSB

D

MSB

D

SO

Figure 22-11.Manufacturer and Device Read (Opcode 9FH)

CS

0

6

7

8

14 15 16

22 23 24

30 31 32

38

SCK

SI

OPCODE

9FH

High-impedance

1FH

Device Id byte 1

Device Id byte 2

00H

SO

Note: Each transition

shown for SI and SO represents one byte (8 bits)

AT45DB321D [DATASHEET]

40

3597R–DFLASH–11/2012

23. Auto Page Rewrite Flowchart

Figure 23-1. Algorithm for Programming or Reprogramming of the Entire Array Sequentially

START

Provide Address

and Data

Buffer Write

(84h, 87h)

Main Memory Page Program

through Buffer

(82h, 85h)

Buffer to Main

Memory Page Program

(83h, 86h)

END

Notes: 1. This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array

page by page.

2. A page can be written using either a main memory page program operation, or a buffer write operation followed by

a buffer to main memory page program operation.

3. The algorithm above shows the programming of a single page. The algorithm will be repeated sequentially for

each page within the entire array.

AT45DB321D [DATASHEET]

41

3597R–DFLASH–11/2012

Figure 23-2. Algorithm for Randomly Modifying Data

START

provide address of

page to modify

Main Memory Page

to Buffer Transfer

(53h, 55h)

If planning to modify multiple

bytes currently stored within

a page of the Flash array

Buffer Write

(84h, 87h)

Main Memory Page Program

through Buffer

(82h, 85h)

Buffer to Main

Memory Page Program

(83h, 86h)

Auto Page Rewrite⁽²⁾

(58h, 59h)

Increment Page

Address Pointer⁽²⁾

END

Notes: 1. To preserve data integrity, each page of an DataFlash sector must be updated/rewritten at least once within every

20,000 cumulative page erase and program operations.

2. A page address pointer must be maintained to indicate which page is to be rewritten. The auto page rewrite com-

mand must use the address specified by the page address pointer.

3. Other algorithms can be used to rewrite portions of the flash array. Low-power applications may choose to wait

until 20,000 cumulative page erase and program operations have accumulated before rewriting all pages of the

sector. See application note AN-4 (“Using Serial DataFlash”) for more details.

AT45DB321D [DATASHEET]

42

3597R–DFLASH–11/2012

24. Ordering Information

Ordering Code Detail

A T 4 5 D B 3 2 1 D – MWU

Designator

Product Family

Device Grade

U = Matte Sn lead finish, industrial

temperature range (-40°C to +85°C)

Device Density

32 = 32-megabit

Package Option

M

=

8-pad, 6 x 5 x 1mm MLF (VDFN)

8-pad, 8 x 6 x 1mm MLF (VDFN)

8-lead, 0.209" wide SOIC

28-lead, TSOP

MW

S

T

C

Interface

1 = Serial

24 Ball BGA

Device Revision

Green Package Options (Pb/Halide-free/RoHS Compliant)

Operating

Voltage

Ordering Code⁽¹⁾⁽²⁾

Package

Lead Finish

f_SCK(MHz) Operation Range

AT45DB321D-MU

AT45DB321D-MU-SL954⁽³⁾

AT45DB321D-MU-SL955⁽⁴⁾

8M1-A

AT45DB321D-MWU

AT45DB321D-MWU-SL954⁽³⁾

AT45DB321D-MWU-SL955⁽⁴⁾

8MW

8S2

Matte Sn

2.7V to 3.6V

66

Industrial

AT45DB321D-SU

(-40C to 85C)

2.7V to 3.6V

AT45DB321D-SU-SL954⁽³⁾

AT45DB321D-SU-SL955⁽⁴⁾

AT45DB321D-TU

28T

24C3

8M1-A

8S2

AT45DB321D-CU

Matte Sn

2.7V to 3.6V

2.5V to 3.6V

66

50

AT45DB321D-MU-2.5

AT45DB321D-SU-2.5

Notes: 1. The shipping carrier option is not marked on the devices.

2. Standard parts are shipped with the page size set to 528 bytes.

The user is able to configure these parts to a 512-byte page size, if desired.

3. Parts ordered with suffix SL954 are shipped in bulk, with the page size set to 512 bytes.

Parts will have “954” or “SL954” marked on them.

4. Parts ordered with suffix SL955 are shipped in tape and reel, with the page size set to 512 bytes.

Parts will have “955” or “SL955” marked on them.

Package Type

8M1-A

8MW

8S2

8-pad, 6 x 5 x 1.0mm, very thin micro lead-frame package MLF^™(VDFN)

8-pad, 8 x 6 x 1.0mm, very thin micro lead-frame package MLF (VDFN)

8-lead, 0.209in-wide, plastic gull wing small outline package (EIAJ SOIC)

28-lead, 8mm x 13.4mm, plastic thin small outline package, type I (TSOP)

24-ball, 6mm x 8mm x 1.4mm ball grid array with a 1mm pitch 5 x 5 ball matrix

28T

24C3

AT45DB321D [DATASHEET]

43

3597R–DFLASH–11/2012

25. Packaging Information

8M1-A – MLF (VDFN)

D

D1

0

Pin 1 ID

E

E1

SIDE VIEW

TOP VIEW

A3

A1

A2

A

0.08

C

COMMON DIMENSIONS

D2

(Unit of Measure = mm)

0.45

MIN

–

MAX

1.00

0.05

NOM

0.85

–

NOTE

SYMBOL

Pin #1 Notch

(0.20 R)

e

A

A1

A2

A3

b

–

E2

0.65 TYP

0.20 TYP

0.40

6.00

5.75

3.40

5.00

4.75

4.00

1.27

0.60

–

b

0.35

5.90

5.70

3.20

4.90

4.70

3.80

0.48

6.10

5.80

3.60

5.10

4.80

4.20

D

D1

D2

E

L

K

BOTTOM VIEW

E1

E2

e

L

0

0.50

–

0.75

12^o

–

K

0.25

–

8/28/08

GPC

YBR

DRAWING NO.

TITLE

REV.

Package Drawing Contact:

contact@adestotech.com

8M1-A, 8-pad, 6 x 5 x 1.00mm Body, Thermally

Enhanced Plastic Very Thin Dual Flat No

Lead Package (VDFN)

8M1-A

D

AT45DB321D [DATASHEET]

44

3597R–DFLASH–11/2012

8MW – MLF (VDFN)

D

Pin 1 ID

E

SIDE VIEW

A1

TOP VIEW

A

D1

COMMON DIMENSIONS

(Unit of Measure = mm)

1

Pin #1 ID

Option A

Option B

Pin #1

Chamfer

(C 0.30)

MIN

–

MAX

1.00

0.05

0.48

8.10

6.50

6.10

4.90

NOM

–

NOTE

SYMBOL

A

E1

A1

b

–

0.35

7.90

6.30

5.90

4.70

0.40

8.00

6.40

6.00

4.80

1.27

0.50

0.30 REF

e

D

D1

E

b

Pin #1

Notch

L

K

E1

e

(0.20 R)

BOTTOM VIEW

L

0.45

0.55

K

5/25/06

DRAWING NO. REV.

TITLE

Package Drawing Contact:

contact@adestotech.com

8MW, 8-pad, 8 x 6 x 1.0mm Body, Very Thin Dual Flat Package

8MW

B

No Lead (MLF)

AT45DB321D [DATASHEET]

45

3597R–DFLASH–11/2012

8S2 – EIAJ SOIC

C

1

E

E1

L

N

q

TOP VIEW

END VIEEWW

e

b

COMMON DIMENSIONS

(Unit of Measure = mm)

A

MIN

1.70

0.05

0.35

0.15

5.13

5.18

7.70

0.51

0°

MAX

2.16

0.25

0.48

0.35

5.35

5.40

8.26

0.85

8°

NOM

NOTE

SYMBOL

A1

A

A1

b

4

C

D

E1

E

D

2

L

SIDDEE VVIIEEWW

q

e

1.27 BSC

3

Notes: 1. This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.

2. Mismatch of the upper and lower dies and resin burrs aren't included.

3. Determines the true geometric position.

4. Values b,C apply to plated terminal. The standard thickness of the plating layer shall measure between 0.007 to .021 mm.

4/15/08

REV.

GPC

DRAWING NO.

TITLE

8S2, 8-lead, 0.208” Body, Plastic Small

Outline Package (EIAJ)

Package Drawing Contact:

contact@adestotech.com

STN

8S2

F

AT45DB321D [DATASHEET]

46

3597R–DFLASH–11/2012

28T – TSOP, Type 1

PIN 1

0º ~ 5º

c

Pin 1 Identifier Area

D1

D

L

b

L1

e

A2

E

GAGE PLANE

A

SEATING PLANE

COMMON DIMENSIONS

(Unit of Measure = mm)

A1

MIN

–

MAX

1.20

0.15

1.05

13.60

NOM

–

NOTE

SYMBOL

A

A1

A2

D

0.05

0.90

13.20

11.70

7.90

0.50

–

1.00

Notes:

1. This package conforms to JEDEC reference MO-183.

2. Dimensions D1 and E do not include mold protrusion. Allowable

protrusion on E is 0.15mm per side and on D1 is 0.25mm per side.

3. Lead coplanarity is 0.10mm maximum.

13.40

11.80

8.00

D1

E

11.90 Note 2

8.10

0.70

Note 2

L

0.60

L1

b

0.25 BASIC

0.22

0.17

0.10

0.27

0.21

c

–

e

0.55 BASIC

12/06/02

DRAWING NO. REV.

28T

TITLE

Package Drawing Contact:

contact@adestotech.com

28T, 28-lead (8 x 13.4mm) Plastic Thin Small Outline

Package, Type I (TSOP)

C

AT45DB321D [DATASHEET]

47

3597R–DFLASH–11/2012

24C3 – CBGA

E

A1 Ball ID

D

A1

Top View

E1

A

1.00 REF

Side View

A1 Ball Corner

e

2.00 REF

A

COMMON DIMENSIONS

(Unit of Measure = mm)

B

C

D

E

D1

MIN

5.90

MAX

6.10

NOM

6.00

NOTE

SYMBOL

E

E1

D

4.0 TYP

8.00

e

7.90

8.10

D1

A

4.0 TYP

–

5

4

3

2

1

–

1.20

–

Øb

A1

e

0.25

–

Bottom View

1.00 BSC

0.40 TYP

b

9/10/04

DRAWING NO. REV.

24C3

TITLE

Package Drawing Contact:

contact@adestotech.com

24C3, 24-ball (5 x 5 Array), 1.0 mm Pitch, 6 x 8 x 1.20 mm,

Chip-scale Ball Grid Array Package (CBGA)

A

AT45DB321D [DATASHEET]

48

3597R–DFLASH–11/2012

26. Revision History

Doc. Rev.

3597R

Date

Comments

11/2012

06/2011

Update to Adesto.

3597Q

In Table 16-3,

- Increased t_XFR,page to buffer transfer time and t_COMP,page to buffer compare time max

values from 200us to 300us

- Changed t_CEtypical time and max time are TBD, see errata

- Changed t_SEtypical time is 1.6s and the max time is 5s

Replace 24C1 with 24C3

Updated template

3597P

05/2010

Changed t_SE(Typ) 1.6 to 0.7 and (Max) 5 to 1.3

Changed from 10,000 to 20,000 cumulative page erase/program operations and added the

please contact Adesto statement in section 11.3

3597O

3597N

10/2009

04/2009

Added the 2.5V V_CCoption

Removed AT45DB321D-MWU-2.5 and AT45DB321D-TU-2.5 from the ordering Information table

Updated Absolute Maximum Ratings

Added 24C1 24 Ball BGA package Option

Deleted DataFlash Card Package Option

3597M

03/2009

Changed deep power-down current values

- Increased typical value from 5μA to 15μA

- Increased maximum value from 15μA to 25μA

3597L

3597K

02/2009

09/2008

Changed t_DIS(Typ and Max) to 27ns and 35ns, respectively

Corrected typographical errors in Sector Erase section.

Corrected A17+A16 from x (Don’t care) to A for opcode 7Ch in Table 15-6

Corrected PA8+PA7 from x (Don’t care) to P for opcode 7Ch in Table 15-7

3597J

3597I

04/2008

08/2007

Added part number ordering code details for suffixes SL954/955

Added ordering code details

Added additional text to “power of two” binary page size option

Changed t_VSCLfrom 50μs to 70μs

Changed t_RDPDfrom 30μs to 35μs

Changed t_XFRand t_COMPvalues from 400μs to 200μs

Removed AT45DB321D-CNU from ordering information and corresponding 8CN3 package

3597H

02/2007

Added AT45DB321D-CNU to ordering information and corresponding 8CN3 package

Removed “not recommended for new designs” comment from 8MW package drawing

3597G

3597F

09/2006

08/2006

Removed “not recommended for new designs” note from ordering information for 8MW package

Added errata regarding Chip Erase

Added AT45DB321D-SU to ordering information and corresponding 8S2 package

3597E

3597D

07/2006

04/2006

Corrected typographical errors

Added 8 x 6mm MLF (VDFN) package

Changed the sector size of 0a and 0b to 8 pages and 120 pages respectively

Changed the Product Version Code to 00001

3597C

03/2006

Added preliminary

Changed the sector size from 256-Kbytes to 64-Kbytes

Added the “Legacy Commands” table

AT45DB321D [DATASHEET]

49

3597R–DFLASH–11/2012

Doc. Rev.

Date

Comments

3597B

01/2006

Added 6 x 5mm MLF (VDFN) package

Added text, in “Programming the Configuration Register”, to indicate that power cycling is

required to switch to “power of two” page size after the opcode enable has been executed.

Corrected typographical error regarding the opcode for chip erase in “Program and Erase

Commands” table

3597A

11/2005

Initial release

27. Errata

27.1 Chip Erase

27.1.1 Issue

In a certain percentage of units, the chip erase feature may not function correctly and may adversely affect device operation.

Therefore, it is recommended that the chip erase commands (opcodes C7H, 94H, 80H, and 9AH) not be used.

27.1.2 Workaround

Use block erase (opcode 50H) as an alternative. The block erase function is not affected by the chip erase issue.

27.1.3 Resolution

The chip erase feature may be fixed with a new revision of the device. Please contact Adesto for the estimated availability of

devices with the fix.

AT45DB321D [DATASHEET]

50

3597R–DFLASH–11/2012

Corporate Office

California | USA

Adesto Headquarters

1250 Borregas Avenue

Sunnyvale, CA 94089

Phone: (+1) 408.400.0578

Email: contact@adestotech.com

Adesto^®, the Adesto logo, CBRAM^®, and DataFlash^®are registered trademarks or trademarks of Adesto Technologies. All other marks are the property of their respective

owners.

Disclaimer: Adesto Technologies Corporation makes no warranty for the use of its products, other than those expressly contained in the Company's standard warranty which is detailed in Adesto's Terms

and Conditions located on the Company's web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications

detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Adesto are granted by the

Company in connection with the sale of Adesto products, expressly or by implication. Adesto's products are not authorized for use as critical components in life support devices or systems.


型号：	AT45DB321D_12
厂家：	ADI
描述：	32Mb, 2.5V or 2.7V DataFlash 32MB， 2.5V或2.7V的DataFlash
文件：	总51页 (文件大小：2135K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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