DG419 [ADI]
LC2MOS Precision Mini-DIP Analog Switch; LC2MOS精密的Mini- DIP模拟开关
| 型号： | DG419 |
| 厂家： | 
ADI |
| 描述： | LC2MOS Precision Mini-DIP Analog Switch |
| 文件： | 总8页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LC2MOS Precision
a
Mini-DIP Analog Switch
ADG417
FEATURES
FUNCTIONAL BLOCK DIAGRAM
44 V Supply Maximum Ratings
VSS to VDD Analog Signal Range
Low On Resistance (<35 ⍀)
Ultralow Power Dissipation (<35 W)
Fast Switching Times
D
S
tON (160 ns max)
tOFF (100 ns max)
Break-Before-Make Switching Action
Plug-In Replacement for DG417
IN
ADG417
APPLICATIONS
SWITCH SHOWN FOR A
LOGIC "1" INPUT
Precision Test Equipment
Precision Instrumentation
Battery Powered Systems
Sample Hold Systems
PRODUCT HIGHLIGHTS
1. Extended Signal Range
GENERAL DESCRIPTION
The ADG417 is a monolithic CMOS SPST switch. This switch
is designed on an enhanced LC2MOS process that provides low
power dissipation yet gives high switching speed, low on resis-
tance and low leakage currents.
The ADG417 is fabricated on an enhanced LC2MOS process,
giving an increased signal range that extends to the supply
rails.
2. Ultralow Power Dissipation
3. Low RON
The on resistance profile of the ADG417 is very flat over the
full analog input range ensuring excellent linearity and low
distortion. The part also exhibits high switching speed and high
signal bandwidth. CMOS construction ensures ultralow power
dissipation making the parts ideally suited for portable and
battery powered instruments.
4. Single Supply Operation
For applications where the analog signal is unipolar, the
ADG417 can be operated from a single rail power supply.
The part is fully specified with a single +12 V power supply
and will remain functional with single supplies as low as
+5 V.
The ADG417 switch, which is turned ON with a logic low on
the control input, conducts equally well in both directions when
ON and has an input signal range that extends to the supplies.
In the OFF condition, signal levels up to the supplies are
blocked. The ADG417 exhibits break-before-make switching
action for use in multiplexer applications. Inherent in the design
is low charge injection for minimum transients when switching
the digital input.
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
Fax: 781/326-8703
World Wide Web Site: http://www.analog.com
© Analog Devices, Inc., 1998
ADG417–SPECIFICATIONS
Dual Supply1
(VDD = +15 V ؎ 10%, VSS = –15 V ؎ 10%, VL = +5 V ؎ 10%, GND = 0 V, unless otherwise noted)
B Version
–40؇C to
T Version
–55؇C to
+25؇C +125؇C
Parameter
+25؇C
+85؇C
Units
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
RON
VSS to VDD
45
VSS to VDD
V
25
35
25
35
Ω typ
Ω max
VD = ±12.5 V, IS = –10 mA
VDD = +13.5 V, VSS = –13.5 V
45
LEAKAGE CURRENTS
VDD = +16.5 V, VSS = –16.5 V
Source OFF Leakage IS (OFF)
±0.1
±0.25
±0.1
±0.25
±0.1
±0.4
±0.1
±0.25
±0.1
±0.25
±0.1
±0.4
nA typ
nA max
nA typ
nA max
nA typ
nA max
VD = ±15.5 V, VS = ϯ15.5 V;
Test Circuit 2
VD = ±15.5 V, VS = ϯ15.5 V;
Test Circuit 2
VS = VD = ±15.5 V;
Test Circuit 3
±5
±5
±5
±15
±15
±30
Drain OFF Leakage ID (OFF)
Channel ON Leakage ID, IS (ON)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
2.4
0.8
2.4
0.8
V min
V max
IINL or IINH
±0.005
±0.5
±0.005
±0.5
µA typ
µA max
VIN = VINL or VINH
DYNAMIC CHARACTERISTICS2
tON
100
160
60
100
7
100
145
60
100
7
ns typ
ns max
ns typ
ns max
pC typ
RL = 300 Ω, CL = 35 pF;
VS = ±10 V; Test Circuit 4
RL = 300 Ω, CL = 35 pF;
VS = ±10 V; Test Circuit 4
VS = 0 V, RL = 0 Ω,
CL = 10 nF; Test Circuit 5
RL = 50 Ω, f = 1 MHz;
Test Circuit 6
200
150
200
150
tOFF
Charge Injection
OFF Isolation
CS (OFF)
80
80
dB typ
6
6
55
6
6
55
pF typ
pF typ
pF typ
CD (OFF)
CD, CS (ON)
POWER REQUIREMENTS
IDD
VDD = +16.5 V, VSS = –16.5 V
VIN = 0 V or 5 V
0.0001
1
0.0001
1
0.0001
1
0.0001
1
0.0001
1
0.0001
1
µA typ
µA max
µA typ
µA max
µA typ
µA max
2.5
2.5
2.5
2.5
2.5
2.5
ISS
IL
VL = +5.5 V
NOTES
1Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. A
ADG417
Single Supply1
(VDD = +12 V ؎ 10%, VSS = 0 V, VL = +5 V ؎ 10%, GND = 0 V, unless otherwise noted)
B Version
–40؇C to
T Version
–55؇C to
Parameter
+25؇C +85؇C
+25؇C +125؇C
Units
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
RON
0 to VDD
0 to VDD
V
40
40
Ω typ
Ω max
VD = +3 V, +8.5 V, IS = –10 mA
VDD = +10.8 V
60
70
LEAKAGE CURRENT
VDD = +13.2 V
Source OFF Leakage IS (OFF)
±0.1
±0.25
±0.1
±0.25
±0.1
±0.4
±0.1
±0.25
±0.1
±0.25
±0.1
±0.4
nA typ
nA max
nA typ
nA max
nA typ
nA max
VD = 12.2 V/1 V, VS = 1 V/12.2 V;
Test Circuit 2
VD = 12.2 V/1 V, VS = 1 V/12.2 V;
Test Circuit 2
VS = VD = 12.2 V/1 V;
Test Circuit 3
±5
±5
±5
±15
±15
±30
Drain OFF Leakage ID (OFF)
Channel ON Leakage ID, IS (ON)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
2.4
0.8
2.4
0.8
V min
V max
IINL or IINH
±0.005
±0.5
±0.005
±0.5
µA typ
µA max
VIN = VINL or VINH
DYNAMIC CHARACTERISTICS2
tON
180
85
250
110
180
85
250
110
ns max
ns max
pC typ
dB typ
RL = 300 Ω, CL = 35 pF;
VS = +8 V; Test Circuit 4
RL = 300 Ω, CL = 35 pF;
VS = +8 V; Test Circuit 4
VS = 0 V, RS = 0 Ω,
CL = 10 nF; Test Circuit 5
RL = 50 Ω, f = 1 MHz;
Test Circuit 6
tOFF
Charge Injection
OFF Isolation
CS (OFF)
11
11
80
80
13
13
65
13
13
65
pF typ
pF typ
pF typ
CD (OFF)
CD, CS (ON)
POWER REQUIREMENTS
IDD
VDD = +13.2 V
VIN = 0 V or 5 V
0.0001
1
0.0001
1
0.0001
1
0.0001
1
µA typ
µA max
µA typ
µA max
2.5
2.5
2.5
2.5
IL
VL = +5.5 V
NOTES
1Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
PIN CONFIGURATION
DIP/SOIC
Table I. Truth Table
Logic
Switch Condition
0
1
ON
OFF
8
7
6
5
1
2
3
4
D
S
NC
ADG417
TOP VIEW
(Not to Scale)
V
SS
GND
IN
V
V
L
DD
ORDERING GUIDE
Temperature Range
NC = NO CONNECT
Model
Package Options*
ADG417BN
ADG417BR
–40°C to +85°C
–40°C to +85°C
N-8
SO-8
*N = Plastic DIP, SO = 0.15" Small Outline IC (SOIC).
REV. A
–3–
ADG417
ABSOLUTE MAXIMUM RATINGS1
(TA = +25°C unless otherwise noted)
Plastic Package, Power Dissipation . . . . . . . . . . . . . . . 400 mW
θJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 100°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +260°C
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . . 400 mW
θJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 155°C/W
Lead Temperature, Soldering
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +44 V
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +25 V
VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –25 V
VL to GND . . . . . . . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V
Analog, Digital Inputs2 . . . . . . . . . . . . . VSS – 2 V to VDD +2 V
or 30 mA, Whichever Occurs First
Vapor Phase (60 sec). . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle Max)
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C
Extended (T Version) . . . . . . . . . . . . . . . . –55°C to +125°C
Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
2Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG417 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
TERMINOLOGY
VDD
VSS
VD (VS)
Analog voltage on terminals D, S.
“OFF” switch source capacitance.
“OFF” switch drain capacitance.
“ON” switch capacitance.
Delay between applying the digital control
input and the output switching on.
Delay between applying the digital control
input and the output switching off.
Maximum input voltage for logic “0.”
Minimum input voltage for logic “1.”
Input current of the digital input.
Most positive power supply potential.
CS (OFF)
CD (OFF)
CD, CS (ON)
tON
Most negative power supply potential in dual
supplies. In single supply applications, it
may be connected to GND.
VL
GND
S
Logic power supply (+5 V).
Ground (0 V) reference.
Source terminal. May be an input or an
output.
Drain terminal. May be an input or an
output.
tOFF
VINL
VINH
D
I
INL (IINH)
IN
RON
IS (OFF)
Logic control input.
Charge Injection A measure of the glitch impulse transferred
from the digital input to the analog output
during switching.
Ohmic resistance between D and S.
Source leakage current with the switch
“OFF.”
Drain leakage current with the switch
“OFF.”
Off Isolation
A measure of unwanted signal coupling
through an “OFF” channel.
Positive supply current.
Negative supply current.
Logic supply current.
ID (OFF)
IDD
ISS
IL
ID, IS (ON)
Channel leakage current with the switch
“ON.”
–4–
REV. A
Typical Performance Characteristics–ADG417
100
50
40
30
20
10
0
T = +25؇C
A
V
V
= +5V
= –5V
T
= +25؇C
DD
SS
A
80
60
40
20
0
V
V
= +5V
= 0V
DD
SS
V
V
= +12V
= –12V
DD
SS
V
V
= +10V
= –10V
DD
SS
V
V
= +10V
= 0V
DD
SS
V
V
= +12V
= 0V
DD
SS
V
V
= +15V
= –15V
DD
SS
V
V
= +15V
= 0V
DD
SS
0
5
10
15
–15
–10
–5
0
5
10
15
V , V – Volts
S
D
V , V – Volts
S
D
Figure 1. RON as a Function of VD (VS): Dual Supply Voltage
Figure 4. RON as a Function of VD (VS): Single Supply
Voltage
50
100
V
V
V
= +15V
= –15V
= +5V
DD
SS
V
V
V
= +12V
= 0V
= +5V
DD
L
SS
40
30
20
10
0
80
60
40
20
0
L
+125؇C
+25؇C
+125؇C
+85؇C
+85؇C
+25؇C
0
3
6
9
12
–15
–10
–5
0
5
10
15
V , V – Volts
V , V – Volts
S
D
S
D
Figure 2. RON as a Function of VD (VS) for Different
Temperatures
Figure 5. RON as a Function of VD (VS) for Different
Temperatures
0.02
0.006
V
V
T
= +15V
= –15V
= +25؇C
V
V
T
= +12V
= 0V
= +25؇C
DD
DD
SS
SS
I
(ON)
D
A
A
0.01
0.00
0.004
0.002
I
(ON)
D
I
(OFF)
S
I
(OFF)
D
I
(OFF)
I
(OFF)
S
D
–0.01
–0.02
–0.03
0.000
–0.002
–0.004
–15
–10
–5
0
5
10
15
0
2
4
6
8
10
12
V , V – Volts
S
D
V , V – Volts
S D
Figure 3. Leakage Currents as a Function of VS (VD)
Figure 6. Leakage Currents as a Function of VS (VD)
REV. A
–5–
ADG417
10mA
1mA
300
250
V
V
V
= +15V
= –15V
= +5V
DD
V
IN
= +5V
SS
L
100A
10A
1A
I+, I–
200
150
100
50
tON – SINGLE SUPPLY
I
L
tON – DUAL SUPPLY
100nA
10nA
tOFF – DUAL SUPPLY
tOFF – SINGLE SUPPLY
1nA
10
0
2
3
4
5
6
7
10
11
SUPPLY VOLTAGE – Volts
7
9
13
15
5
10
10
10
10
FREQUENCY – Hz
Figure 7. Supply Current vs. Input Switching Frequency
Figure 8. Switching Time vs. Power Supply
–6–
REV. A
ADG417
Test Circuits
I
DS
V1
I
(ON)
I
(OFF)
I
(OFF)
D
D
S
S
D
S
D
S
D
V
V
D
V
V
D
S
V
S
S
R
= V /I
1 DS
ON
Test Circuit 2. Off Leakage
Test Circuit 3. On Leakage
Test Circuit 1. On Resistance
V
V
L
DD
0.1F
0.1F
3V
V
V
50%
50%
V
DD
L
IN
D
S2
V
OUT
R
V
C
L
L
S
300⍀
35pF
IN
90%
90%
V
OUT
V
GND
SS
tON
tOFF
0.1F
V
SS
Test Circuit 4. Switching Times
V
V
V
DD
L
0.1F
0.1F
3V
V
V
DD
L
IN
R
L
D
S2
IN
V
OUT
C
L
V
V
⌬V
OUT
S
OUT
10nF
Q
= C
؋
⌬V L OUT
INJ
V
GND
SS
0.1F
V
SS
Test Circuit 5. Charge Injection
V
V
DD
DD
L
L
0.1F
0.1F
V
V
S
D
V
OUT
R
L
50⍀
IN
V
GND
SS
V
S
V
IN
0.1F
V
SS
Test Circuit 6. Off Isolation
–7–
REV. A
ADG417
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
8-Lead Plastic DIP (N-8)
0.430 (10.92)
0.348 (8.84)
8
5
0.280 (7.11)
0.240 (6.10)
PIN 1
1
4
0.325 (8.25)
0.300 (7.62)
0.100 (2.54)
BSC
0.060 (1.52)
0.015 (0.38)
0.195 (4.95)
0.115 (2.93)
0.210 (5.33)
MAX
0.130
(3.30)
MIN
0.160 (4.06)
0.115 (2.93)
0.015 (0.381)
0.022 (0.558) 0.070 (1.77) SEATING
0.014 (0.356) 0.045 (1.15)
0.008 (0.204)
PLANE
8-Lead SOIC (SO-8)
(Narrow Body)
0.1968 (5.00)
0.1890 (4.80)
8
5
4
0.2440 (6.20)
0.2284 (5.80)
0.1574 (4.00)
0.1497 (3.80)
1
PIN 1
0.0196 (0.50)
0.0099 (0.25)
0.0500 (1.27)
BSC
x 45؇
0.0688 (1.75)
0.0532 (1.35)
0.0098 (0.25)
0.0040 (0.10)
SEATING
PLANE
8؇
0؇
0.0500 (1.27)
0.0160 (0.41)
0.0192 (0.49)
0.0138 (0.35)
0.0098 (0.25)
0.0075 (0.19)
–8–
REV. A
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DG419BDQ-E3
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