HMC326MS8GRTR [ADI]

IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,BIPOLAR,TSSOP,8PIN,PLASTIC;


型号：	HMC326MS8GRTR
厂家：	ADI
描述：	IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,BIPOLAR,TSSOP,8PIN,PLASTIC 放大器
文件：	总6页 (文件大小：220K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HMC326MS8G / 326MS8GE

v08.0808

GaAs InGaP HBT MMIC DRIVER

AMPLIFIER, 3.0 - 4.5 GHz

Typical Applications

Features

The HMC326MS8G / HMC326MS8GE is ideal for:

Psat Output Power: +26 dBm

• Microwave Radios

> 40% PAE

• Broadband Radio Systems

Output IP3: +36 dBm

High Gain: 21 dB

• Wireless Local Loop Driver Ampliﬁer

Vs: +5V

Ultra Small Package: MSOP8G

Functional Diagram

General Description

The HMC326MS8G & HMC326MS8GE are high

efficiency GaAs InGaP Heterojunction Bipolar

Transistor (HBT) MMIC driver ampliﬁers which

operate between 3.0 and 4.5 GHz. The ampliﬁer

is packaged in a low cost, surface mount 8 leaded

package with an exposed base for improved RF and

thermal performance. The ampliﬁer provides 21 dB

of gain and +26 dBm of saturated power from a +5V

supply voltage. Power down capability is available to

conserve current consumption when the ampliﬁer is

not in use. Internal circuit matching was optimized to

provide greater than 40% PAE.

Electrical Speciﬁcations, T_A= +25° C, Vs = 5V, Vpd = 5V

Parameter

Min.

Typ.

Max.

Units

GHz

Frequency Range

3.0 - 4.5

Gain

Gain Variation Over Temperature

Input Return Loss

0.025

0.035

dB / °C

Output Return Loss

Output Power for 1dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Noise Figure

23.5

dBm

Supply Current (Icc)

Control Current (Ipd)

Switching Speed

Vpd = 0V / 5V

tOn/tOff

0.001 / 130

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

5 - 34

HMC326MS8G / 326MS8GE

v08.0808

GaAs InGaP HBT MMIC DRIVER

AMPLIFIER, 3.0 - 4.5 GHz

Broadband Gain & Return Loss

Gain vs. Temperature

S21

S11

S22

-5

-10

-15

-20

+25C

+85C

-40C

2.5

3.5

4.5

5.5

3.25

3.5

3.75

4.25

4.5

FREQUENCY (GHz)

P1dB vs. Temperature

Psat vs. Temperature

+25C

+85C

-40C

+25C

+85C

-40C

3.25

3.5

3.75

4.25

4.5

3.25

3.5

3.75

4.25

4.5

FREQUENCY (GHz)

Output IP3 vs. Temperature

Power Compression @ 3.5 GHz

+25C

+85C

Output Power (dBm)

Gain (dB)

PAE (%)

-40C

3.25

3.5

3.75

4.25

4.5

-8

-6

-4

-2

FREQUENCY (GHz)

INPUT POWER (dBm)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

5 - 35

HMC326MS8G / 326MS8GE

v08.0808

GaAs InGaP HBT MMIC DRIVER

AMPLIFIER, 3.0 - 4.5 GHz

Input Return Loss vs. Temperature

Output Return Loss vs. Temperature

-3

-6

+25C

-5

+85C

-40C

-10

-9

-15

-20

+25C

+85C

-40C

-12

-15

3.25

3.5

3.75

4.25

4.5

3.25

3.5

3.75

4.25

4.5

FREQUENCY (GHz)

Reverse Isolation vs. Temperature

Noise Figure vs. Temperature

-10

-20

+25C

+85C

-40C

-30

-40

-50

-60

+25C

+85C

-40C

3.25

3.5

3.75

4.25

4.5

3.25

3.5

3.75

4.25

4.5

FREQUENCY (GHz)

Gain, Power & Quiescent Supply

Current vs. Vpd @3.5 GHz

150

PSAT

P1dB

120

GAIN

Icc

1.5

2.5

3.5

4.5

Vpd (Vdc)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

5 - 36

HMC326MS8G / 326MS8GE

v08.0808

GaAs InGaP HBT MMIC DRIVER

AMPLIFIER, 3.0 - 4.5 GHz

Absolute Maximum Ratings

Collector Bias Voltage (Vcc)

Control Voltage Range (Vpd)

RF Input Power (RFIN)(Vs = Vpd = +5Vdc)

Junction Temperature

+5.5 Vdc

+15 dBm

150 °C

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Continuous Pdiss (T = 85 °C)

(derate 14 mW/°C above 85 °C)

0.916 W

71 °C/W

Thermal Resistance

(junction to ground paddle)

Storage Temperature

Operating Temperature

ESD Sensitivity (HBM)

-65 to +150 °C

-40 to +85 °C

Class 1A

Outline Drawing

NOTES:

1. LEADFRAME MATERIAL: COPPER ALLOY

2. DIMENSIONS ARE IN INCHES [MILLIMETERS]

3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO

PCB RF GROUND.

Package Information

Part Number

Package Body Material

Lead Finish

MSL Rating

MSL1 ^[1]

Package Marking ^[3]

H326

XXXX

HMC326MS8G

Low Stress Injection Molded Plastic

Sn/Pb Solder

H326

XXXX

MSL1 ^[2]

HMC326MS8GE

RoHS-compliant Low Stress Injection Molded Plastic

100% matte Sn

[1] Max peak reﬂow temperature of 235 °C

[2] Max peak reﬂow temperature of 260 °C

[3] 4-Digit lot number XXXX

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

5 - 37

HMC326MS8G / 326MS8GE

v08.0808

GaAs InGaP HBT MMIC DRIVER

AMPLIFIER, 3.0 - 4.5 GHz

Evaluation PCB

List of Materials for Evaluation PCB 104356 ^[1]

The circuit board used in the ﬁnal application should

use RF circuit design techniques. Signal lines

should have 50 ohm impedance while the package

ground leads and exposed paddle should be con-

nected directly to the ground plane similar to that

shown. A sufficient number of via holes should be

used to connect the top and bottom ground planes.

The evaluation board should be mounted to an

appropriate heat sink. The evaluation circuit board

shown is available from Hittite upon request.

Item

J1 - J2

Description

PCB Mount SMA RF Connector

2mm DC Header

C1 - C2

330 pF Capacitor, 0603 Pkg.

0.7 pF Capacitor, 0603 Pkg.

3.0 pF Capacitor, 0402 Pkg.

2.2 μF Capacitor, Tantalum

3.3 nH Inductor, 0805 Pkg.

HMC326MS8G / HMC326MS8GE

Ampliﬁer

[2]

PCB

104106 Eval Board

[1] Reference this number when ordering complete evaluation PCB

[2] Circuit Board Material: Rogers 4350, 10 mil thick, tr = 3.48

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

5 - 38

HMC326MS8G / 326MS8GE

v08.0808

GaAs InGaP HBT MMIC DRIVER

AMPLIFIER, 3.0 - 4.5 GHz

Application Circuit

Impedance

TL1

TL2

256

TL3

128

Physical Length (mils)

Electrical Length (degs)

23.3

Recommended Component Values

3.3 nH

330 pF

C1 - C2

0.7 pF

3.0 pF

2.2 μF

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

5 - 39

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