HMC407MS8GE [ADI]
GaAs InGaP HBT MMIC Power Amplifier, 5 - 7 GHz;
| 型号： | HMC407MS8GE |
| 厂家： | 
ADI |
| 描述： | GaAs InGaP HBT MMIC Power Amplifier, 5 - 7 GHz 射频 微波 |
| 文件： | 总7页 (文件大小：355K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC407MS8G / 407MS8GE
v03.1006
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 7 GHz
Typical Applications
Features
This amplifier is ideal for use as a power
amplifier for 5 - 7 GHz applications:
Gain: 15 dB
Saturated Power: +29 dBm
28% PAE
• UNII
• HiperLAN
Supply Voltage: +5V
Power Down Capability
No External Matching Required
11
Functional Diagram
General Description
The HMC407MS8G & HMC407MS8GE are high
efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) MMIC Power amplifiers which
operate between 5 and 7 GHz. The amplifier requires
no external matching to achieve operation and is
thus truly 50 Ohm matched at input and output. The
amplifier is packaged in a low cost, surface mount
8 leaded package with an exposed base for im-
proved RF and thermal performance. The amplifier
provides 15 dB of gain, +29 dBm of saturated power
at 28% PAE from a +5V supply voltage. Power down
capability is available to conserve current consum-
ption when the amplifier is not in use.
Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V
Parameter
Min.
Typ.
Max.
Min.
12
Typ.
Max.
Units
GHz
dB
Frequency Range
Gain
5 - 7
5.6 - 6.0
10
15
18
15
18
Gain Variation Over Temperature
Input Return Loss
0.025
0.035
0.025
0.035
dB/ °C
dB
12
12
Output Return Loss
15
15
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
21
32
25
22
36
25
dBm
dBm
dBm
dB
29
29
37
40
5.5
5.5
Supply Current (Icq)
Vpd = 0V/5V
Vpd = 5V
0.002 / 230
0.002 / 230
mA
Control Current (Ipd)
7
7
mA
Switching Speed
tON, tOFF
30
30
ns
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders: Analog Devices, Inc.,
responsibility is assumed byAnalogDevices foritsuse, nor for anyinfringementsofpatentsor other
rights of third parties thatmay resultfromitsuse.Specificationssubject to changewithout notice. NoPOhnoenTee:c7h8n1o-3lo2g9y-4W7a0y0, •P.OOr.dBeorxon9l1in0e6,aNtworwwwoo.adn,aMloAg.0c2o0m62-9106
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
11 - 28
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
HMC407* PRODUCT PAGE QUICK LINKS
Last Content Update: 11/29/2017
COMPARABLE PARTS
View a parametric search of comparable parts.
REFERENCE MATERIALS
Product Selection Guide
• RF, Microwave, and Millimeter Wave IC Selection Guide
2017
EVALUATION KITS
Quality Documentation
• HMC407MS8G Evaluation Board
• HMC Legacy PCN: MS##, MS##E and MS##G,MS##GE
packages - Relocation of pre-existing production
equipment to new building
DOCUMENTATION
Application Notes
• Package/Assembly Qualification Test Report: MS8G (QTR:
2014-00393)
• AN-1363: Meeting Biasing Requirements of Externally
Biased RF/Microwave Amplifiers with Active Bias
Controllers
• PCN: MS, QS, SOT, SOIC Packages - Sn/Pb Plating Vendor
Change
• Broadband Biasing of Amplifiers General Application Note
• MMIC Amplifier Biasing Procedure Application Note
• Semiconductor Qualification Test Report: GaAs HBT-B
(QTR: 2013-00229)
• Thermal Management for Surface Mount Components
General Application Note
DESIGN RESOURCES
• HMC407 Material Declaration
• PCN-PDN Information
• Quality And Reliability
• Symbols and Footprints
Data Sheet
• HMC407 Data Sheet
TOOLS AND SIMULATIONS
• HMC407 S-Parameter
DISCUSSIONS
View all HMC407 EngineerZone Discussions.
SAMPLE AND BUY
Visit the product page to see pricing options.
TECHNICAL SUPPORT
Submit a technical question or find your regional support
number.
DOCUMENT FEEDBACK
Submit feedback for this data sheet.
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HMC407MS8G / 407MS8GE
v03.1006
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 7 GHz
Broadband Gain & Return Loss
Gain vs. Temperature
20
15
10
5
20
16
S21
S11
S22
12
0
-5
+25 C
+85 C
-40 C
8
4
0
-10
-15
-20
-25
11
2
3
4
5
6
7
8
9
10
4
4.5
5
5.5
6
6.5
7
7.5
8
8
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
+25 C
+85 C
-40 C
-5
-10
-15
-20
-25
+25 C
+85 C
-40 C
-5
-10
-15
-20
4
4.5
5
5.5
6
6.5
7
7.5
8
4
4.5
5
5.5
6
6.5
7
7.5
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature
Psat vs. Temperature
34
34
30
26
22
18
14
30
26
22
18
14
+25 C
+85 C
-40 C
+25 C
+85 C
-40 C
4
4.5
5
5.5
6
6.5
7
7.5
8
4
4.5
5
5.5
6
6.5
7
7.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders: Analog Devices, Inc.,
responsibility is assumed byAnalogDevices foritsuse, nor for anyinfringementsofpatentsor other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
11 - 29
HMC407MS8G / 407MS8GE
v03.1006
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 7 GHz
Power Compression @ 5.8 GHz
Output IP3 vs.Temperature
30
25
20
15
10
5
44
39
34
29
+25 C
+85 C
-40 C
24
19
14
11
Pout (dBm)
Gain (dB)
PAE (%)
0
0
4
8
12
16
20
4
4.5
5
5.5
6
6.5
7
7.5
8
INPUT POWER (dBm)
FREQUENCY (GHz)
Noise Figure vs.Temperature
Gain & Power vs. Supply Voltage
10
30
28
26
24
22
20
18
8
6
16
14
12
10
8
4
+25C
2
+85C
-40C
0
5
5.5
6
6.5
7
4.75
5
5.25
FREQUENCY (GHz)
Vcc SUPPLY VOLTAGE (Vdc)
Reverse Isolation vs.Temperature
Power Down Isolation
0
0
-10
-10
-20
-30
-40
+25 C
+85 C
-40 C
-20
-30
-40
-50
4
4.5
5
5.5
6
6.5
7
7.5
8
4
5
6
7
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders: Analog Devices, Inc.,
responsibility is assumed byAnalogDevices foritsuse, nor for anyinfringementsofpatentsor other
rights of third parties thatmay resultfromitsuse.Specificationssubject to changewithout notice. NoPOhnoenTee:c7h8n1o-3lo2g9y-4W7a0y0, •P.OOr.dBeorxon9l1in0e6,aNtworwwwoo.adn,aMloAg.0c2o0m62-9106
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
11 - 30
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
HMC407MS8G / 407MS8GE
v03.1006
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 7 GHz
Gain, Power & Quiescent
Supply Current vs. Vpd @ 5.8 GHz
Absolute Maximum Ratings
250
200
150
100
50
30
Collector Bias Voltage (Vcc1, Vcc2)
+5.5 Vdc
+5.5 Vdc
+20 dBm
150 °C
Control Voltage (Vpd)
25
RF Input Power (RFIN)(Vs = Vpd = +5Vdc)
Junction Temperature
P1dB
Psat
Gain
20
Continuous Pdiss (T = 85 °C)
(derate 31 mW/°C above 85 °C)
2 W
Icq
15
Thermal Resistance
(junction to ground paddle)
32 °C/W
11
10
5
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +85 °C
0
2.5
3
3.5
4
4.5
5
Vpd (Vdc)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
H407
XXXX
HMC407MS8G
HMC407MS8GE
Low Stress Injection Molded Plastic
Sn/Pb Solder
H407
XXXX
MSL1 [2]
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders: Analog Devices, Inc.,
responsibility is assumed byAnalogDevices foritsuse, nor for anyinfringementsofpatentsor other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
11 - 31
HMC407MS8G / 407MS8GE
v03.1006
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 7 GHz
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
Power supply voltage for the first amplifier stage. An external bypass capacitor
of 330 pF is required as shown in the application schematic.
1
Vcc1
11
Power control pin. For maximum power, this pin should be connected to 5V. A
higher voltage is not recommended. For lower die current, this voltage can be
reduced.
2
Vpd
Ground: Backside of package has exposed metal ground slug that must be
connected to ground thru a short path. Vias under the device are required.
3, 6, 7
GND
This pin is AC coupled
and matched to 50 Ohms.
4
5
RFIN
This pin is AC coupled
and matched to 50 Ohms.
RFOUT
Power supply voltage for the output amplifier stage. An external bypass
capacitor of 330 pF is required. This capacitor should be placed no more than
20 mils form package lead.
8
Vcc2
Application Circuit
Note 1: Vcc1 and Vcc2 may be connected to a common Vcc.
Note 2: C2 should be located < 0.020” from Pin 8 (Vcc2).
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders: Analog Devices, Inc.,
responsibility is assumed byAnalogDevices foritsuse, nor for anyinfringementsofpatentsor other
rights of third parties thatmay resultfromitsuse.Specificationssubject to changewithout notice. NoPOhnoenTee:c7h8n1o-3lo2g9y-4W7a0y0, •P.OOr.dBeorxon9l1in0e6,aNtworwwwoo.adn,aMloAg.0c2o0m62-9106
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
11 - 32
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
HMC407MS8G / 407MS8GE
v03.1006
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 7 GHz
Evaluation PCB
11
List of Materials for Evaluation PCB 104987 [1]
The circuit board used in the final application should
use RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown. A
sufficient number of via holes should be used to con-
nect the top and bottom ground planes. The evalua-
tion board should be mounted to an appropriate heat
sink. The evaluation circuit board shown is available
from Hittite upon request.
Item
J1 - J2
J3
Description
PCB Mount SMA RF Connector
2 mm DC Header
C1 - C3
C4
330 pF Capacitor, 0603 Pkg.
2.2 μF Capacitor, Tantalum
HMC407MS8G / HMC407MS8GE Amplifier
104628 Eval Board
U1
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Roger 4350
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders: Analog Devices, Inc.,
responsibility is assumed byAnalogDevices foritsuse, nor for anyinfringementsofpatentsor other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
11 - 33
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