HMC516LC5RTR [ADI]
HMC516LC5RTR;型号: | HMC516LC5RTR |
厂家: | ADI |
描述: | HMC516LC5RTR 射频 微波 |
文件: | 总6页 (文件大小:214K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HMC516LC5
v02.1208
SMT PHEMT LOW NOISE
AMPLIFIER, 9 - 18 GHz
8
Typical Applications
The HMC516LC5 is ideal for use as a LNA or driver
amplifier for:
Features
Noise Figure: 2 dB
Gain: 20 dB
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment and Sensors
• Military
OIP3: +25 dBm
Single Supply: +3V @ 65 mA
50 Ohm Matched Input/Output
RoHS Compliant 5x5 mm Package
Functional Diagram
General Description
The HMC516LC5 is a high dynamic range GaAs
PHEMT MMIC Low Noise Amplifier (LNA) housed in
a leadless “Pb free” RoHS compliant SMT package.
The HMC516LC5 provides 20 dB of small signal
gain, 2 dB of noise figure and has an output IP3 of
+25 dBm. The P1dB output power of +13 dBm enables
the LNA to also function as a LO driver for balanced,
I/Q or image reject mixers. The HMC516LC5 allows
the use of surface mount manufacturing techniques.
Electrical Specifications, TA = +25° C, Vdd 1, 2, 3 = +3V
Parameter
Min.
Typ.
9 - 12
20
Max.
Min.
18
Typ.
12 - 18
20.5
0.015
2.0
Max.
Units
GHz
dB
Frequency Range
Gain
17.5
Gain Variation Over Temperature
Noise Figure
0.015
2.0
10
0.025
2.5
0.025
2.5
dB/ °C
dB
Input Return Loss
10
dB
Output Return Loss
12
12
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = +3V)
13
14
dBm
dBm
dBm
mA
15
16
25
25
65
88
65
88
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC516LC5
v02.1208
SMT PHEMT LOW NOISE
AMPLIFIER, 9 - 18 GHz
8
Broadband Gain & Return Loss
Gain vs. Temperature
25
20
15
10
5
22
20
18
16
14
12
10
S21
S11
S22
0
+25C
+85C
-40C
-5
-10
-15
-20
4
6
8
10
12
14
16
18
20
22
18
18
8
10
12
14
16
18
18
18
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
+25C
+85C
-40C
-5
-10
-15
-20
-25
-30
+25C
+85C
-40C
-5
-10
-15
-20
8
10
12
14
16
8
10
12
14
16
FREQUENCY (GHz)
FREQUENCY (GHz)
Noise Figure vs. Temperature
Output IP3 vs. Temperature
10
35
9
30
25
20
15
8
7
6
5
4
3
2
1
0
+25C
+85C
-40C
+25C
+85C
-40C
10
5
0
8
10
12
14
16
8
10
12
14
16
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 139
HMC516LC5
v02.1208
SMT PHEMT LOW NOISE
AMPLIFIER, 9 - 18 GHz
8
P1dB vs.Temperature
Psat vs.Temperature
20
18
16
14
12
10
8
20
18
16
14
12
10
8
+25C
+85C
-40C
+25C
+85C
-40C
6
6
4
4
2
2
0
0
8
10
12
14
16
18
8
10
12
14
16
18
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs.Temperature
Power Compression @ 12 GHz
0
-10
-20
25
20
Pout
Gain
PAE
-30
+25C
15
10
5
+85C
-40C
-40
-50
-60
-70
-80
0
8
10
12
14
16
18
-22 -20 -18 -16 -14 -12 -10 -8
-6
-4
-2
0
FREQUENCY (GHz)
INPUT POWER (dBm)
Gain, Noise Figure & Power vs.
Supply Voltage @ 12 GHz
7
6
5
4
3
2
1
0
24
22
20
18
16
14
12
10
Gain
P1dB
Noise Figure
2.5
3
3.5
Vdd (V)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 140
HMC516LC5
v02.1208
SMT PHEMT LOW NOISE
AMPLIFIER, 9 - 18 GHz
8
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
Vdd (Vdc)
Idd (mA)
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
RF Input Power (RFIN)(Vdd = +3.0 Vdc)
Channel Temperature
+4 Vdc
+2.5
61
65
69
+5 dBm
+3.0
175 °C
1.25 W
+3.5
Continuous Pdiss (T= 85 °C)
(derate 14 mW/°C above 85 °C)
Note: Amplifier will operate over full voltage range shown
above.
Thermal Resistance
(channel to die bottom)
71 °C/W
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
-65 to +150 °C
-40 to +85 °C
Class 1A
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES
GOLD OVER 50 MICROINCHES MINIMUM NICKEL
3. DIMENSIONS ARE IN INCHES [MILLIMETERS]
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 141
HMC516LC5
v02.1208
SMT PHEMT LOW NOISE
AMPLIFIER, 9 - 18 GHz
8
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1, 2, 6-19,
23-25, 27,
29, 31, 32
This pin may be connected to RF/DC ground.
Performance will not be affected.
N/C
4
RFIN
This pin is AC coupled and matched to 50 Ohms.
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 2.2 μF are required.
30, 28, 26
Vdd1, 2, 3
21
RFOUT
GND
This pin is AC coupled and matched to 50 Ohms.
These pins and package bottom must be
connected to RF/DC ground.
3, 5, 20, 22
Application Circuit
Component Value
C1, C2, C3
C4, C5, C6
100 pF
2.2 μF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 142
HMC516LC5
v02.1208
SMT PHEMT LOW NOISE
AMPLIFIER, 9 - 18 GHz
8
Evaluation PCB
List of Materials for Evaluation PCB 110431 [1]
The circuit board used in the final application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
Item
Description
J1 - J2
J3
PCB Mount K Connector
2 mm DC Header
C1 - C3
C4 - C6
U1
100 pF Capacitor, 0402 Pkg.
2.2 μF Capacitor, Tantalum
HMC516LC5 Amplifier
109001 Evaluation PCB
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 143
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