HMC516LC5RTR [ADI]

HMC516LC5RTR;
HMC516LC5RTR
型号: HMC516LC5RTR
厂家: ADI    ADI
描述:

HMC516LC5RTR

射频 微波
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中文:  中文翻译
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HMC516LC5  
v02.1208  
SMT PHEMT LOW NOISE  
AMPLIFIER, 9 - 18 GHz  
8
Typical Applications  
The HMC516LC5 is ideal for use as a LNA or driver  
amplifier for:  
Features  
Noise Figure: 2 dB  
Gain: 20 dB  
• Point-to-Point Radios  
• Point-to-Multi-Point Radios & VSAT  
• Test Equipment and Sensors  
• Military  
OIP3: +25 dBm  
Single Supply: +3V @ 65 mA  
50 Ohm Matched Input/Output  
RoHS Compliant 5x5 mm Package  
Functional Diagram  
General Description  
The HMC516LC5 is a high dynamic range GaAs  
PHEMT MMIC Low Noise Amplifier (LNA) housed in  
a leadless “Pb free” RoHS compliant SMT package.  
The HMC516LC5 provides 20 dB of small signal  
gain, 2 dB of noise figure and has an output IP3 of  
+25 dBm. The P1dB output power of +13 dBm enables  
the LNA to also function as a LO driver for balanced,  
I/Q or image reject mixers. The HMC516LC5 allows  
the use of surface mount manufacturing techniques.  
Electrical Specifications, TA = +25° C, Vdd 1, 2, 3 = +3V  
Parameter  
Min.  
Typ.  
9 - 12  
20  
Max.  
Min.  
18  
Typ.  
12 - 18  
20.5  
0.015  
2.0  
Max.  
Units  
GHz  
dB  
Frequency Range  
Gain  
17.5  
Gain Variation Over Temperature  
Noise Figure  
0.015  
2.0  
10  
0.025  
2.5  
0.025  
2.5  
dB/ °C  
dB  
Input Return Loss  
10  
dB  
Output Return Loss  
12  
12  
dB  
Output Power for 1 dB Compression (P1dB)  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3)  
Supply Current (Idd)(Vdd = +3V)  
13  
14  
dBm  
dBm  
dBm  
mA  
15  
16  
25  
25  
65  
88  
65  
88  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
8 - 138  
HMC516LC5  
v02.1208  
SMT PHEMT LOW NOISE  
AMPLIFIER, 9 - 18 GHz  
8
Broadband Gain & Return Loss  
Gain vs. Temperature  
25  
20  
15  
10  
5
22  
20  
18  
16  
14  
12  
10  
S21  
S11  
S22  
0
+25C  
+85C  
-40C  
-5  
-10  
-15  
-20  
4
6
8
10  
12  
14  
16  
18  
20  
22  
18  
18  
8
10  
12  
14  
16  
18  
18  
18  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Input Return Loss vs. Temperature  
Output Return Loss vs. Temperature  
0
0
+25C  
+85C  
-40C  
-5  
-10  
-15  
-20  
-25  
-30  
+25C  
+85C  
-40C  
-5  
-10  
-15  
-20  
8
10  
12  
14  
16  
8
10  
12  
14  
16  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Noise Figure vs. Temperature  
Output IP3 vs. Temperature  
10  
35  
9
30  
25  
20  
15  
8
7
6
5
4
3
2
1
0
+25C  
+85C  
-40C  
+25C  
+85C  
-40C  
10  
5
0
8
10  
12  
14  
16  
8
10  
12  
14  
16  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
8 - 139  
HMC516LC5  
v02.1208  
SMT PHEMT LOW NOISE  
AMPLIFIER, 9 - 18 GHz  
8
P1dB vs.Temperature  
Psat vs.Temperature  
20  
18  
16  
14  
12  
10  
8
20  
18  
16  
14  
12  
10  
8
+25C  
+85C  
-40C  
+25C  
+85C  
-40C  
6
6
4
4
2
2
0
0
8
10  
12  
14  
16  
18  
8
10  
12  
14  
16  
18  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Reverse Isolation vs.Temperature  
Power Compression @ 12 GHz  
0
-10  
-20  
25  
20  
Pout  
Gain  
PAE  
-30  
+25C  
15  
10  
5
+85C  
-40C  
-40  
-50  
-60  
-70  
-80  
0
8
10  
12  
14  
16  
18  
-22 -20 -18 -16 -14 -12 -10 -8  
-6  
-4  
-2  
0
FREQUENCY (GHz)  
INPUT POWER (dBm)  
Gain, Noise Figure & Power vs.  
Supply Voltage @ 12 GHz  
7
6
5
4
3
2
1
0
24  
22  
20  
18  
16  
14  
12  
10  
Gain  
P1dB  
Noise Figure  
2.5  
3
3.5  
Vdd (V)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
8 - 140  
HMC516LC5  
v02.1208  
SMT PHEMT LOW NOISE  
AMPLIFIER, 9 - 18 GHz  
8
Typical Supply Current vs. Vdd  
Absolute Maximum Ratings  
Vdd (Vdc)  
Idd (mA)  
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)  
RF Input Power (RFIN)(Vdd = +3.0 Vdc)  
Channel Temperature  
+4 Vdc  
+2.5  
61  
65  
69  
+5 dBm  
+3.0  
175 °C  
1.25 W  
+3.5  
Continuous Pdiss (T= 85 °C)  
(derate 14 mW/°C above 85 °C)  
Note: Amplifier will operate over full voltage range shown  
above.  
Thermal Resistance  
(channel to die bottom)  
71 °C/W  
Storage Temperature  
Operating Temperature  
ESD Sensitivity (HBM)  
-65 to +150 °C  
-40 to +85 °C  
Class 1A  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
Outline Drawing  
NOTES:  
1. PACKAGE BODY MATERIAL: ALUMINA  
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES  
GOLD OVER 50 MICROINCHES MINIMUM NICKEL  
3. DIMENSIONS ARE IN INCHES [MILLIMETERS]  
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE  
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM  
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE  
SOLDERED TO PCB RF GROUND  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
8 - 141  
HMC516LC5  
v02.1208  
SMT PHEMT LOW NOISE  
AMPLIFIER, 9 - 18 GHz  
8
Pin Descriptions  
Pin Number  
Function  
Description  
Interface Schematic  
1, 2, 6-19,  
23-25, 27,  
29, 31, 32  
This pin may be connected to RF/DC ground.  
Performance will not be affected.  
N/C  
4
RFIN  
This pin is AC coupled and matched to 50 Ohms.  
Power Supply Voltage for the amplifier. External bypass  
capacitors of 100 pF and 2.2 μF are required.  
30, 28, 26  
Vdd1, 2, 3  
21  
RFOUT  
GND  
This pin is AC coupled and matched to 50 Ohms.  
These pins and package bottom must be  
connected to RF/DC ground.  
3, 5, 20, 22  
Application Circuit  
Component Value  
C1, C2, C3  
C4, C5, C6  
100 pF  
2.2 μF  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
8 - 142  
HMC516LC5  
v02.1208  
SMT PHEMT LOW NOISE  
AMPLIFIER, 9 - 18 GHz  
8
Evaluation PCB  
List of Materials for Evaluation PCB 110431 [1]  
The circuit board used in the final application should  
use RF circuit design techniques. Signal lines  
should have 50 ohm impedance while the package  
ground leads and exposed paddle should be con-  
nected directly to the ground plane similar to that  
shown. A sufficient number of via holes should be  
used to connect the top and bottom ground planes.  
The evaluation board should be mounted to an  
appropriate heat sink. The evaluation circuit board  
shown is available from Hittite upon request.  
Item  
Description  
J1 - J2  
J3  
PCB Mount K Connector  
2 mm DC Header  
C1 - C3  
C4 - C6  
U1  
100 pF Capacitor, 0402 Pkg.  
2.2 μF Capacitor, Tantalum  
HMC516LC5 Amplifier  
109001 Evaluation PCB  
[2]  
PCB  
[1] Reference this number when ordering complete evaluation PCB  
[2] Circuit Board Material: Rogers 4350  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
8 - 143  

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