HMC606LC5TR [ADI]

HMC606LC5TR;
HMC606LC5TR
型号: HMC606LC5TR
厂家: ADI    ADI
描述:

HMC606LC5TR

射频 微波
文件: 总10页 (文件大小:236K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GaAs, InGaP, HBT, MMIC, Ultralow Phase Noise,  
Distributed Amplifier, 2 GHz to 18 GHz  
Data Sheet  
HMC606LC5  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
Ultralow phase noise: −160 dBc/Hz typical at 10 kHz  
Output power for 1 dB compression (P1dB): 15 dBm typical  
at 2 GHz to 12 GHz frequency range  
Gain: 13.5 dB typical at 2 GHz to 12 GHz frequency range  
Output third-order intercept (IP3): 27 dBm typical at 2 GHz to  
12 GHz frequency range  
NC  
1
2
3
4
5
6
7
8
NC  
NC  
22 GND  
24  
23  
HMC606LC5  
V
1
CC  
NC  
21 RFOUT  
GND  
RFIN  
GND  
NC  
GND  
NC  
NC  
20  
19  
18  
17  
Supply voltage: 5.0 V at 64 mA typical  
50 Ω matched input/output  
NC  
NC  
32-terminal, ceramic, leadless chip carrier (LCC)  
PACKAGE  
BASE  
APPLICATIONS  
GND  
Radars, electronic warfare (EW), and electronic counter  
measures (ECMs)  
Figure 1.  
Microwave radios  
Test instrumentation  
Military and space  
Fiber optic systems  
GENERAL DESCRIPTION  
The HMC606LC5 is a gallium arsenide (GaAs), indium gallium  
phosphide (InGaP), heterojunction bipolar transistor (HBT),  
monolithic microwave integrated circuit (MMIC) distributed  
amplifier housed in a 32-terminal, ceramic, leadless chip carrier  
(LCC) package that operates from 2 GHz to 18 GHz. With an  
input signal of 12 GHz, the amplifier provides ultralow phase noise  
performance of −160 dBc/Hz at a 10 kHz offset, representing a  
significant improvement over field effect transistor (FET)-based  
distributed amplifiers.  
The HMC606LC5 provides 13.5 dB of small signal gain, 27 dBm  
output IP3, and 15 dBm of output power for 1 dB compression  
while requiring 64 mA from a 5.0 V supply. The input and output  
of the HMC606LC5 amplifier are internally matched to 50 Ω  
and are internally dc blocked.  
Rev. I  
Document Feedback  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registered trademarks are the property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700 ©2017–2018 Analog Devices, Inc. All rights reserved.  
Technical Support  
www.analog.com  
 
 
 
 
HMC606LC5  
Data Sheet  
TABLE OF CONTENTS  
Features .............................................................................................. 1  
Pin Configuration and Function Descriptions..............................5  
Interface Schematics .....................................................................5  
Typical Performance Characteristics ..............................................6  
Applications information .................................................................9  
Evaluation Printed Circuit Board (PCB) ...................................9  
Outline Dimensions....................................................................... 10  
Ordering Guide .......................................................................... 10  
Applications....................................................................................... 1  
Functional Block Diagram .............................................................. 1  
General Description......................................................................... 1  
Revision History ............................................................................... 2  
Specifications..................................................................................... 3  
Electrical Specifications............................................................... 3  
Absolute Maximum Ratings............................................................ 4  
ESD Caution.................................................................................. 4  
REVISION HISTORY  
1/2018—Rev. H to Rev. I  
This Hittite Microwave Products data sheet has been reformatted  
to meet the styles and standards of Analog Devices, Inc.  
Changes to Figure 16, Figure 16 Caption, Figure 17, Figure 17  
Caption, Figure 18, Figure 18 Caption, and Figure 19 ................ 8  
Changes to Ordering Guide .......................................................... 10  
2/2017—Rev. 05.0514 to Rev. F  
Updated Format..................................................................Universal  
Changes to Features Section and General Description Section........1  
Changes to Table 4.............................................................................4  
Updated Outline Dimensions..........................................................9  
Changes to Ordering Guide.............................................................9  
10/2017—Rev. G to Rev. H  
Changes to Typical Performance Characteristics Section........... 7  
Added Figure 19; Renumbered Sequentially ................................ 9  
Updated Outline Dimensions ...................................................... 10  
Changes to Ordering Guide .......................................................... 10  
8/2017—Rev. F to Rev. G  
Changes to Continuous Power Dissipation, PDISS Parameter,  
Table 4 ................................................................................................ 4  
Rev. I | Page 2 of 10  
 
Data Sheet  
HMC606LC5  
SPECIFICATIONS  
ELECTRICAL SPECIFICATIONS  
TA = 25°C, VCC1 = VCC2 = 5 V, unless otherwise noted.  
Table 1.  
Parameter  
Min  
2
Typ  
Max  
Unit  
GHz  
dB  
dB  
dB/°C  
dB  
FREQUENCY RANGE  
GAIN  
Flatness  
Variation Over Temperature  
NOISE FIGURE  
INPUT RETURN LOSS  
OUTPUT  
12  
10.5  
13.5  
1.0  
0.021  
5
20  
dB  
Return Loss  
Power for 1 dB Compression (P1dB)  
Saturated Power (PSAT  
Third-Order Intercept (IP3)  
PHASE NOISE  
At 100 Hz  
At 1 kHz  
At 10 kHz  
15  
15  
17  
27  
dB  
12  
dBm  
dBm  
dBm  
)
−140  
−150  
−160  
−170  
64  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
mA  
At 1 MHz  
SUPPLY CURRENT  
95  
Table 2.  
Parameter  
Min  
Typ  
Max  
Unit  
GHz  
dB  
dB  
dB/°C  
dB  
FREQUENCY RANGE  
GAIN  
Flatness  
Variation Over Temperature  
NOISE FIGURE  
INPUT RETURN LOSS  
OUTPUT  
2
18  
9.5  
12.5  
1.0  
0.024  
7
18  
dB  
Return Loss  
Power for 1 dB Compression (P1dB)  
Saturated Power (PSAT  
Third-Order Intercept (IP3)  
PHASE NOISE  
At 100 Hz  
At 1 kHz  
At 10 kHz  
15  
13  
15  
22  
dB  
10  
dBm  
dBm  
dBm  
)
−140  
−150  
−160  
−170  
64  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
mA  
At 1 MHz  
SUPPLY CURRENT  
95  
Table 3. VCC1, VCC2 vs. Typical Supply Current  
VCC1, VCC2 (V)  
ICC1 + ICC2 (mA)  
4.5  
5.0  
5.5  
53  
64  
71  
Rev. I | Page 3 of 10  
 
 
HMC606LC5  
Data Sheet  
ABSOLUTE MAXIMUM RATINGS  
Stresses at or above those listed under Absolute Maximum  
Table 4.  
Ratings may cause permanent damage to the product. This is a  
stress rating only; functional operation of the product at these  
or any other conditions above those indicated in the operational  
section of this specification is not implied. Operation beyond  
the maximum operating conditions for extended periods may  
affect product reliability.  
Parameter  
Rating  
VCC1 = VCC  
2
7 V  
RF Input Power (RFIN)  
Channel Temperature  
Continuous Power Dissipation, PDISS (TA =  
85°C, Derate 10.9 mW/°C Above 85°C)  
Maximum Peak Reflow Temperature (MSL3)1  
15 dBm  
175°C  
0.978 W  
260°C  
92°C/W  
ESD CAUTION  
Thermal Resistance (Channel to Ground  
Paddle)  
Storage Temperature Range  
Operating Temperature Range  
ESD Sensitivity (Human Body Model, HBM)  
−65°C to +150°C  
−40°C to +85°C  
Class 0, Pass 100 V  
1 See the Ordering Guide section.  
Rev. I | Page 4 of 10  
 
 
Data Sheet  
HMC606LC5  
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS  
NC  
1
2
3
4
5
6
7
8
24 NC  
23 NC  
V
1
CC  
22  
GND  
NC  
HMC606LC5  
21 RFOUT  
GND  
RFIN  
GND  
NC  
TOP VIEW  
20  
19  
GND  
NC  
(Not to Scale)  
18 NC  
17 NC  
NC  
PACKAGE  
BASE  
GND  
NOTES  
1. NC = NO CONNECT. THESE PINS MAY BE CONNECTED TO RF  
GROUND. PERFORMANCE WILL NOT BE AFFECTED.  
2. THE EXPOSED PAD MUST BE CONNECTED TO RF/DC GROUND.  
Figure 2. Pin Configuration  
Table 5. Pin Function Descriptions  
Pin No.  
Mnemonic Description  
1, 3, 7 to 15, 17 to 19, 23 to 32  
2, 16  
NC  
VCC1, VCC  
No Connect. These pins may be connected to RF ground. Performance will not be affected.  
Power Supply Voltages for the Amplifier. See Figure 3 for the interface schematic.  
2
4, 6, 20, 22  
GND  
Ground. These pins must be connected to RF/dc ground. See Figure 4 for the interface  
schematic.  
5
RFIN  
RF Input. This pin is ac-coupled and matched to 50 Ω. See Figure 5 for the interface  
schematic.  
21  
RFOUT  
EPAD  
RF Output. This pin is ac-coupled and matched to 50 Ω. See Figure 6 for the interface  
schematic.  
Exposed Pad. The exposed pad must be connected to RF/dc ground.  
INTERFACE SCHEMATICS  
V
1, V  
2
CC  
CC  
RFIN  
Figure 3. VCC1, VCC2 Interface Schematic  
Figure 5. RFIN Interface Schematic  
GND  
RFOUT  
Figure 6. RFOUT Interface Schematic  
Figure 4. GND Interface Schematic  
Rev. I | Page 5 of 10  
 
 
 
 
 
 
HMC606LC5  
Data Sheet  
TYPICAL PERFORMANCE CHARACTERISTICS  
20  
16  
12  
8
20  
S11  
S21  
S22  
+85°C  
+25°C  
–40°C  
10  
0
–10  
–20  
–30  
4
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
2
4
6
8
10  
12  
14  
16  
18  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Figure 7. Response (Gain and Return Loss) vs. Frequency  
Figure 10. Gain vs. Frequency for Various Temperatures  
0
0
–5  
+85°C  
+25°C  
–40°C  
+85°C  
+25°C  
–40°C  
–5  
–10  
–15  
–20  
–25  
–30  
–10  
–15  
–20  
–25  
–30  
2
4
6
8
10  
12  
14  
16  
18  
2
4
6
8
10  
12  
14  
16  
18  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Figure 8. Input Return Loss vs. Frequency for Various Temperatures  
Figure 11. Output Return Loss vs. Frequency for Various Temperatures  
20  
14  
+85°C  
+25°C  
–40°C  
12  
15  
10  
5
10  
8
6
4
0
2
OUTPUT POWER  
GAIN  
PAE  
–5  
–15  
0
–10  
–5  
0
5
10  
2
4
6
8
10  
12  
14  
16  
18  
P
(dBm)  
IN  
FREQUENCY (GHz)  
Figure 9. Output Power (POUT), Gain, and Power Added Efficiency (PAE) vs.  
Input Power (PIN  
Figure 12. Noise Figure vs. Frequency for Various Temperatures  
)
Rev. I | Page 6 of 10  
 
Data Sheet  
HMC606LC5  
20  
16  
12  
8
25  
21  
17  
13  
9
+85°C  
+25°C  
–40°C  
+85°C  
+25°C  
–40°C  
4
0
5
2
4
6
8
10  
12  
14  
16  
18  
2
4
6
8
10  
12  
14  
16  
18  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Figure 13. Power for 1 dB Compression (P1dB) vs. Frequency for Various  
Temperatures  
Figure 15. Saturated Power (PSAT) vs. Frequency for Various Temperatures  
35  
+85°C  
+25°C  
–40°C  
30  
25  
20  
15  
10  
5
2
4
6
8
10  
12  
14  
16  
18  
FREQUENCY (GHz)  
Figure 14. Output Third-Order Intercept (IP3) vs. Frequency for Various  
Temperatures  
Rev. I | Page 7 of 10  
HMC606LC5  
Data Sheet  
–80  
–80  
–90  
–90  
–100  
–110  
–120  
–130  
–140  
–150  
–160  
–170  
–180  
–100  
–110  
–120  
–130  
–140  
–150  
–160  
–170  
–180  
10  
100  
1k  
10k  
100k  
1M  
10  
100  
1k  
10k  
100k  
1M  
OFFSET FREQUENCY (Hz)  
OFFSET FREQUENCY (Hz)  
Figure 16. Additive Phase Noise vs. Offset Frequency  
RF Frequency = 12 GHz, RF Input Power = 3 dBm (P1dB)  
Figure 18. Additive Phase Noise vs. Offset Frequency,  
RF Frequency = 12 GHz, RF Input Power = 11 dBm (PSAT  
)
–80  
–90  
–80  
–90  
–100  
–110  
–120  
–130  
–140  
–150  
–160  
–170  
–180  
–100  
–110  
–120  
–130  
–140  
–150  
–160  
–170  
–180  
10  
100  
1k  
10k  
100k  
1M  
100  
1k  
10k  
100k  
1M  
OFFSET FREQUENCY (Hz)  
OFFSET FREQUENCY (Hz)  
Figure 17. Additive Phase Noise vs. Offset Frequency  
RF Frequency = 12 GHz at Small Signal  
Figure 19. Additive Phase Noise vs. Offset Frequency,  
RF Frequency = 8 GHz, RF Input Power = 12 dBm (PSAT  
)
Rev. I | Page 8 of 10  
Data Sheet  
HMC606LC5  
APPLICATIONS INFORMATION  
Use a sufficient number of via holes to connect the top and bottom  
ground planes. Mount the evaluation PCB to an appropriate  
heat sink. The evaluation PCB shown in Figure 20 is available  
from Analog Devices, Inc., upon request.  
EVALUATION PRINTED CIRCUIT BOARD (PCB)  
The circuit board used in the application must use RF circuit  
design techniques. Signal lines must have 50 Ω impedance, and  
the package ground leads and package bottom must be connected  
directly to the ground plane similar to that shown in Figure 20.  
Figure 20. Evaluation PCB  
Table 6. List of Materials for Evaluation PCB (117156-HMC606LC51)  
Item  
J1, J2  
J3, J4  
C1, C2  
C3, C4  
C5, C6  
U1  
Description  
SRI K connectors  
2 mm Molex headers  
4.7 μF, tantalum capacitors  
100 pF capacitors, 0402 package  
1000 pF capacitors, 0603 package  
HMC606LC5  
PCB  
117325-1 evaluation PCB; circuit board material: Rogers 4350  
1 Reference this number when ordering the complete evaluation PCB.  
Rev. I | Page 9 of 10  
 
 
 
HMC606LC5  
Data Sheet  
OUTLINE DIMENSIONS  
5.05  
4.90 SQ  
4.75  
0.36  
0.30  
0.24  
PIN 1  
0.08  
REF  
INDICATOR  
PIN 1  
32  
25  
24  
1
0.50  
BSC  
3.60  
3.50 SQ  
3.40  
EXPOSED  
PAD  
17  
8
16  
9
0.38  
0.32  
0.26  
0.20 MIN  
BOTTOM VIEW  
3.50 REF  
TOP VIEW  
SIDE VIEW  
1.10  
1.00  
0.90  
4.10 REF  
FOR PROPER CONNECTION OF  
THE EXPOSED PAD, REFER TO  
THE PIN CONFIGURATION AND  
FUNCTION DESCRIPTIONS  
SEATING  
PLANE  
SECTION OF THIS DATA SHEET.  
Figure 21. 32-Terminal Ceramic Leadless Chip Carrier [LCC]  
(E-32-1)  
Dimensions shown in millimeters  
ORDERING GUIDE  
Model1  
HMC606LC5  
HMC606LC5TR  
HMC606LC5TR-R5  
117156-HMC606LC5  
Temperature Range  
−40°C to +85°C  
−40°C to +85°C  
−40°C to +85°C  
MSL Rating2  
MSL3  
MSL3  
MSL3  
Package Description  
Package Option  
E-32-1  
E-32-1  
32-Terminal Ceramic Leadless Chip Carrier [LCC]  
32-Terminal Ceramic Leadless Chip Carrier [LCC]  
32-Terminal Ceramic Leadless Chip Carrier [LCC]  
Evaluation Board  
E-32-1  
1 All models are RoHS Compliant.  
2 See the Absolute Maximum Ratings section.  
©2017–2018 Analog Devices, Inc. All rights reserved. Trademarks and  
registered trademarks are the property of their respective owners.  
D14968-0-1/18(I)  
Rev. I | Page 10 of 10  
 
 

相关型号:

HMC606LC5TR-R5

HMC606LC5TR-R5
ADI

HMC606LC5_08

GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
HITTITE

HMC606_09

GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
HITTITE

HMC607

GaAs MMIC HIGH ISOLATION SPDT SWITCH, DC - 15 GHz
HITTITE

HMC607G7

GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 6.0 GHz
HITTITE

HMC607G7_08

GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 6 GHz
HITTITE

HMC607_09

GaAs MMIC HIGH ISOLATION SPDT SWITCH, DC - 15 GHz
HITTITE

HMC608

GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz
HITTITE

HMC608LC4

GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz
HITTITE

HMC608LC4RTR

IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,GAAS,LLCC,24PIN,CERAMIC
ADI

HMC608LC4TR

GaAs pHEMT Medium Power Amplifier, 9.5 - 11.5 GHz
ADI

HMC608LC4TR

Wide Band Medium Power Amplifier,
HITTITE