HMC718LP4RTR [ADI]
IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,DUAL,LLCC,24PIN,PLASTIC;
| 型号： | HMC718LP4RTR |
| 厂家： | 
ADI |
| 描述： | IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,DUAL,LLCC,24PIN,PLASTIC 放大器 |
| 文件： | 总10页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC718LP4 / 718LP4E
v01.1008
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
5
Features
Typical Applications
The HMC718LP4(E) is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
Noise Figure: 0.9 dB
Gain: 32 dB
Output IP3: +40 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
24 Lead 4x4 mm SMT Package: 16 mm2
• Repeaters and Femtocells
• Access Points
• Test Equipment
Functional Diagram
General Description
The HMC718LP4(E) is a GaAs PHEMT MMIC
Low Noise Amplifier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 600 and 1400 MHz. The amplifier
has been optimized to provide 0.9 dB noise figure,
32 dB gain and +40 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC718LP4(E) shares the same package and
pinout with the HMC719LP3(E) 1.3 - 2.9 GHz LNA.
The HMC718LP4(E) can be biased with +3V to +5V
and features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application.
Electrical Specifications, TA = +25°C, Rbias = 3.92k Ohms*
Vdd = +3V
Vdd = +5V
Max. Min.
Parameter
Units
Min.
26
Typ.
0.6 - 1.0
30.5
0.01
0.95
15
Max.
Min.
25
Typ.
1.0 - 1.4
27.5
0.01
0.75
20
Max.
Min.
27
Typ.
0.6 - 1.0
32
Typ.
1.0 - 1.4
29
Max.
Frequency Range
Gain
GHz
dB
25
Gain Variation Over Temperature
Noise Figure
0.01
0.01
0.8
dB/ °C
dB
0.95
Input Return Loss
Output Return Loss
15.5
23
dB
13
10
15.5
13
dB
Output Power for 1 dB
Compression (P1dB)
13
15.5
13
15.7
19
21.5
19
21.5
dBm
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)
19
35
19
23.5
40.5
254
23.3
40
dBm
dBm
mA
34.5
187
187
200
200
281
254
281
* Rbias resistor sets current, see application circuit herein
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 334
HMC718LP4 / 718LP4E
v01.1008
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
5
[1] [2]
[1]
Broadband Gain & Return Loss
Gain vs. Temperature
40
40
S21
30
+25C
+85C
-40C
20
35
30
25
20
Vdd=5V
Vdd=3V
10
0
-10
-20
-30
-40
S22
S11
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0.5
0.7
0.9
1.1
1.3
1.5
1.5
1.5
FREQUENCY (GHz)
FREQUENCY (GHz)
[2]
[1]
Gain vs. Temperature
Input Return Loss vs. Temperature
40
0
-10
-20
+25C
+85C
-40C
35
30
25
20
-30
+25C
-40
+85C
-40C
-50
0.5
0.7
0.9
1.1
1.3
0.5
0.7
0.9
1.1
1.3
1.5
FREQUENCY (GHz)
FREQUENCY (GHz)
[1]
[1]
Output Return Loss vs. Temperature
Reverse Isolation vs.Temperature
0
0
+25C
+85C
-40C
-10
-5
-10
-15
-20
-25
+25C
+85C
-40C
-20
-30
-40
-50
-60
0.5
0.7
0.9
1.1
1.3
1.5
0.5
0.7
0.9
1.1
1.3
FREQUENCY (GHz)
FREQUENCY (GHz)
[1] Vdd = 5V, Rbias = 3.92K [2] Vdd = 3V, Rbias = 3.92K
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 335
HMC718LP4 / 718LP4E
v01.1008
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
5
[1] [2]
[1] [2]
Noise Figure vs.Temperature
P1dB vs. Temperature
1.6
26
Vdd=5V
24
Vdd=5V
1.4
Vdd=3V
+85C
1.2
22
1
0.8
0.6
20
+25C
+85C
-40C
18
16
0.4
14
+25C
-40C
1.3
Vdd=3V
0.2
12
0.5
0.7
0.9
1.1
1.3
1.5
0.5
0.7
0.9
1.1
1.5
FREQUENCY (GHz)
FREQUENCY (GHz)
[1] [2]
[1] [2]
Psat vs. Temperature
Output IP3 vs.Temperature
26
50
24
+25C
+85C
-40C
Vdd=5V
45
40
35
30
25
22
Vdd=5V
20
18
Vdd=3V
16
+25C
+85C
-40C
14
Vdd=3V
12
0.5
0.7
0.9
1.1
1.3
1.5
0.5
0.7
0.9
1.1
1.3
1.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 and Idd vs.
Output IP3 and Idd vs.
Supply Voltage @ 700 MHz [3]
Supply Voltage @ 1300 MHz [3]
300
300
45
45
IP3
IP3
250
200
150
100
50
250
200
150
100
50
40
40
35
30
25
20
15
35
30
25
20
15
Idd1
Idd2
Idd1
Idd2
0
0
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
VOLTAGE SUPPLY (V)
VOLTAGE SUPPLY (V)
[1] Vdd = 5V, Rbias = 3.92K [2] Vdd = 3V, Rbias = 3.92K [3] Rbias = 3.92K
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 336
HMC718LP4 / 718LP4E
v01.1008
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
5
[2]
[1]
Power Compression @ 700 MHz
Power Compression @ 700 MHz
35
30
25
20
15
10
5
35
30
25
Pout
Gain
PAE
20
Pout
Gain
PAE
15
10
5
0
0
-5
-30
-5
-25
-20
-15
-10
-5
-30
-27
-24
-21
-18
-15
-12
-9
INPUT POWER (dBm)
INPUT POWER (dBm)
[1]
[2]
Power Compression @ 1300 MHz
Power Compression @ 1300 MHz
30
30
25
25
20
20
Pout
Gain
PAE
Pout
Gain
PAE
15
10
5
15
10
5
0
0
-5
-30
-5
-30
-25
-20
-15
-10
-5
0
-25
-20
-15
-10
-5
INPUT POWER (dBm)
INPUT POWER (dBm)
Gain, Power & Noise Figure
vs. Supply Voltage @ 700 MHz
Gain, Power & Noise Figure
vs. Supply Voltage @ 1300 MHz
[3]
[3]
1.2
1.2
40
40
NF
1.1
1
P1dB
Gain
1.1
1
35
35
30
25
20
15
10
NF
30
25
20
15
10
0.9
0.8
0.7
0.6
0.9
0.8
0.7
0.6
P1dB
Gain
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
VOLTAGE SUPPLY (V)
VOLTAGE SUPPLY (V)
[1] Vdd = 5V, Rbias = 3.92K [2] Vdd = 3V, Rbias = 3.92K [3] Rbias = 3.92K
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 337
HMC718LP4 / 718LP4E
v01.1008
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
5
Output IP3 vs. Rbias @ 900 MHz
Gain, Noise Figure & Rbias @ 900 MHz
44
42
40
38
36
34
32
1.5
1.3
1.1
0.9
0.7
33
31
29
27
25
23
Vdd=3V
Vdd=5V
Vdd=3V
Vdd=5V
0.5
1
10
100
1000
10000
100
1000
10000
100000
Rbias (Ohms)
Rbias (Ohms)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 338
HMC718LP4 / 718LP4E
v01.1008
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
Absolute Bias Resistor
Range & Recommended Bias Resistor Values for Idd
5
Rbias Ω
Vdd (V)
Idd1 (mA)
Idd2 (mA)
Min
Max
Recommended
2.7k
3.9k
10k
27
32
41
67
88
92
155
155
155
166
166
166
3V
5V
1K [1]
Open Circuit
820
0
Open Circuit
3.92k
10k
[1] Operation with Vdd= 3V and Rbias < 1K Ohm may result in the part becoming conditionally stable which is not recommended.
Typical Supply
Absolute Maximum Ratings
Current vs. Vdd (Rbias = 3.92k)
Drain Bias Voltage (Vdd)
5.5 V
Vdd (V)
Idd1 (mA)
Idd2 (mA)
RF Input Power (RFIN)
(Vdd = +5 Vdc)
2.7
22
32
43
77
88
95
153
-5 dBm
175 °C
1.8 W
3.0
155
Channel Temperature
3.3
157
Continuous Pdiss (T= 85 °C)
(derate 20 mW/°C above 85 °C)
4.5
164
5.0
166
Thermal Resistance
(channel to ground paddle)
50 °C/W
5.5
169
Note: Amplifier will operate over full voltage ranges shown above.
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 339
HMC718LP4 / 718LP4E
v01.1008
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
5
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE
MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR
SUGGESTED LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
H718
XXXX
HMC718LP4
Low Stress Injection Molded Plastic
Sn/Pb Solder
H718
XXXX
MSL1 [2]
HMC718LP4E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 340
HMC718LP4 / 718LP4E
v01.1008
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
5
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1, 3 - 5, 7 - 16,
18, 20, 22, 23
No connection necessary. These pins may be connected to
RF/DC ground without affecting performance.
N/C
This pin is DC coupled
and matched to 50 Ohms.
2
RFIN
This pin is used to set the DC current of the amplifier by
selection of external bias resistor. See application circuit.
6
RES
RF Output and DC BIAS for the second amplifier.
See Application Circuit for off-chip components.
17
RFOUT
This pin is DC coupled. An off-chip DC
blocking capacitor is required.
19
21
RFIN2
RFOUT1
This pin is matched to 50 Ohms.
Power Supply Voltage for the first amplifier. Choke inductor
and bypass capacitors are required. See application circuit.
24
Vdd
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 341
HMC718LP4 / 718LP4E
v01.1008
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
5
Application Circuit
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 342
HMC718LP4 / 718LP4E
v01.1008
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
5
Evaluation PCB
List of Material for Evaluation PCB 121128 [1]
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appro-
priate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
Item
Description
PCB Mount SMA Connector
2mm Vertical Molex Connector
220 pF Capacitor, 0402 Pkg.
10 nF Capacitor, 0402 Pkg.
10 nF Capacitor, 0603 Pkg.
1000 pF Capacitor, 0603 Pkg.
4.7 uF Capacitor, 0805 Pkg.
15 nH Inductor, 0402 Pkg.
18 nH Inductor, 0603 Pkg.
47 nH Inductor, 0603 Pkg.
Rbias Resistor, 0402 Pkg.
0 Ohm Resistor, 0402 Pkg.
HMC718LP4(E) Amplifier
121126 Evaluation PCB
J1 - J3
J4 - J5
C1, C8, C12
C3
C4, C11
C5, C13
C10
L1
L2
L4
R1
R2, R3
U1
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Arlon 25FR
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 343
相关型号：
HMC719LP4ETR
Wide Band Low Power Amplifier, 1300MHz Min, 2900MHz Max, 2 Func, GAAS, 4 X 4 MM, ROHS COMPLIANT, PLASTIC, SMT, 24 PIN
HITTITE
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