HMC7912LP5E [ADI]
21 GHz to 24 GHz, GaAs, MMIC, I/Q Upconverter;
| 型号： | HMC7912LP5E |
| 厂家： | 
ADI |
| 描述： | 21 GHz to 24 GHz, GaAs, MMIC, I/Q Upconverter |
| 文件： | 总24页 (文件大小：552K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
21 GHz to 24 GHz,
GaAs, MMIC, I/Q Upconverter
Data Sheet
HMC7912
FEATURES
GENERAL DESCRIPTION
Conversion gain: 15 dB typical
Sideband rejection: 22 dBc typical
The HMC7912 is a compact, gallium arsenide (GaAs), pseudo-
morphic (pHEMT), monolithic microwave integrated circuit
(MMIC) upconverter in a RoHS compliant, low stress, injection
molded plastic LFCSP package that operates from 21 GHz to
24 GHz. This device provides a small signal conversion gain of
15 dB with 22 dBc of sideband rejection. The HMC7912 uses a
variable gain amplifier preceded by an in-phase/quadrature (I/Q)
mixer that is driven by an active 2× LO multiplier. IF1 and IF2
mixer inputs are provided, and an external 90° hybrid is needed to
select the required sideband. The I/Q mixer topology reduces
the need for filtering of the unwanted sideband. The HMC7912
is a much smaller alternative to hybrid style single sideband (SSB)
upconverter assemblies, and it eliminates the need for wire
bonding by allowing the use of surface-mount manufacturing
techniques.
Input power for 1 dB compression (P1dB): 4 dBm typical
Output third-order intercept (OIP3): 33 dBm typical
2× local oscillator (LO) leakage at RFOUT: 5 dBm typical
2× LO leakage at the intermediate frequency (IF) input:
−35 dBm typical
RF return loss: 15 dB typical
LO return loss: 15 dB typical
32-lead, 5 mm × 5 mm LFCSP package
APPLICATIONS
Point to point and point to multipoint radios
Military radars, electronic warfare (EW), and electronic
intelligence (ELINT)
Satellite communications
Sensors
FUNCTIONAL BLOCK DIAGRAM
32
31
30
29
28
27
26
25
1
2
3
4
5
6
7
8
24
NIC
V
GMIX
23 NIC
22 V
NIC
NIC
NIC
NIC
DRF2
21
20
19
18
17
V
V
V
V
CTL1
CTL2
DRF3
DRF4
HMC7912
GND
LOIN
GND
2×
NIC
9
10
11
12
13
14
15
16
EPAD
Figure 1.
Rev. B
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rightsof third parties that may result fromits use. Specifications subject to change without notice. No
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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2016–2018 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
HMC7912
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Leakage Performance................................................................. 16
Return Loss Performance.......................................................... 17
Power Detector Performance.................................................... 18
Spurious Performance ............................................................... 19
Theory of Operation ...................................................................... 20
Applications Information .............................................................. 21
Biasing Sequence ........................................................................ 21
Local Oscillator Nulling ............................................................ 21
Evaluation Printed Circuit Board............................................. 23
Outline Dimensions....................................................................... 24
Ordering Guide .......................................................................... 24
Applications....................................................................................... 1
General Description ......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 4
Thermal Resistance ...................................................................... 4
ESD Caution.................................................................................. 4
Pin Configuration and Function Descriptions............................. 5
Interface Schematics..................................................................... 6
Typical Performance Characteristics ............................................. 7
REVISION HISTORY
4/2018—Rev. A to Rev. B
Changes to Biasing Sequence Section.......................................... 21
Updated Outline Dimensions....................................................... 24
Changes to Ordering Guide .......................................................... 24
6/2016—Rev. 0 to Rev. A
Change to the Local Oscillator (LO) Parameter and Output
Third-Order Intercept (OIP3) at Maximum Gain Parameter,
Table 1 ................................................................................................ 3
Changes to Figure 76, Figure 77, Figure 78, Figure 79, Figure 80,
and Figure 81................................................................................... 18
4/2016—Revision 0: Initial Version
Rev. B | Page 2 of 24
Data Sheet
HMC7912
SPECIFICATIONS
TA = 25°C, IF = 1 GHz, VDLOx = 5 V, V DRFx = 5 V, V CTLx = −5 V, VESD = −5 V, VGMIX = −0.5 V, LO = 4 dBm. Measurements performed with upper
sideband selected and external 90° hybrid at the IF ports, unless otherwise noted.
Table 1.
Parameter
Min
Typ
Max
Unit
OPERATING CONDITIONS
Frequency Range
Radio Frequency (RF)
Local Oscillator (LO)
Intermediate Frequency (IF)
LO Drive Range
21
24
12
3.5
8
GHz
GHz
GHz
dBm
8.75
DC
2
PERFORMANCE
Conversion Gain
10
31
13
15
33
22
4
33
5
dB
dB
Conversion Gain Dynamic Range
Sideband Rejection
Input Power for 1 dB Compression (P1dB)
Output Third-Order Intercept (OIP3) at Maximum Gain
2× LO Leakage at RFOUT1
2× LO Leakage at IFx2
Noise Figure
dBc
dBm
dBm
dBm
dBm
dB
22.5
−35
14
Return Loss
RF
LO
IFx2
15
15
20
dB
dB
dB
POWER SUPPLY
Total Supply Current
LO Amplifier
RF Amplifier3
100
220
mA
mA
1 The LO signal level at the RF output port is not calibrated.
2 Measurements taken without the 90° hybrid at the IF ports.
3 Adjust VGRF between −2 V and 0 V to achieve a total variable gain amplifier quiescent drain current = 220 mA.
Rev. B | Page 3 of 24
HMC7912
Data Sheet
ABSOLUTE MAXIMUM RATINGS
Table 2.
THERMAL RESISTANCE
θJA is specified for the worst case conditions, that is, a device
soldered in a circuit board for surface-mount packages. The θJA
values in Table 3 assume a 4-layer JEDEC standard board with
zero airflow.
Parameter
Rating
Drain Bias Voltage
VDRFx, VDLOx, VREF, VDET
Gate Bias Voltage
VGRF
VCTLx, VESD
VGMIX
5.5 V
−3 V to 0 V
−7 V to 0 V
−2 V to 0 V
10 dBm
Table 3. Thermal Resistance
Package Type
θJA
θJC
Unit
32-Lead LFCSP
31.66
37.6
°C/W
LO Input Power
IF Input Power
10 dBm
Maximum Junction Temperature
Storage Temperature Range
Operating Temperature Range
Reflow Temperature
ESD Sensitivity (HBM)
175°C
ESD CAUTION
−65°C to +150°C
−40°C to +85°C
260°C
250 V (Class 1A)
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Rev. B | Page 4 of 24
Data Sheet
HMC7912
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
32 31 30 29 28 27 26 25
24 NIC
23 NIC
V
V
1
GMIX
NIC 2
NIC 3
22
21
20
19
18
DRF2
CTL1
CTL2
DRF3
DRF4
V
V
V
V
NIC
4
HMC7912
TOP VIEW
NIC 5
(Not to Scale)
GND 6
LOIN 7
GND 8
17 NIC
9
10 11 12 13 14 15 16
EPAD
NOTES
1. NIC = NOT INTERNALLY CONNECTED. NO CONNECTION IS REQUIRED.
THESE PINS ARE NOT CONNECTED INTERNALLY. HOWEVER, ALL DATA
SHOWN HEREIN WERE MEASURED WITH THESE PINS CONNECTED
EXTERNALLY TO RF/DC GROUND.
2. EXPOSED PAD. CONNECT TO A LOW IMPEDANCE THERMAL AND
ELECTRICAL GROUND PLANE.
Figure 2. Pin Configuration
Table 4. Pin Function Descriptions
Pin No.
Mnemonic Description
1
VGMIX
Gate Voltage for the FET Mixer. See Figure 3. Refer to the typical application circuit for the required external
components (see Figure 83).
2 to 5, 16, 17,
23, 24, 29, 31, 32
NIC
Not Internally Connected. No connection is required. These pins are not connected internally. However, all
data shown herein were measured with these pins connected externally to RF/dc ground.
6, 8, 13, 15
7
GND
LOIN
Ground Connect. See Figure 4. These pins and package bottom must be connected to RF/dc ground.
Local Oscillator Input. See Figure 5. This pin is dc-coupled and matched to 50 Ω.
9, 10
VDLO1, VDLO2
Power Supply Voltage for the LO Amplifier. See Figure 6. Refer to the typical application circuit for the
required external components (see Figure 83).
11
12
VREF
Reference Voltage for the Power Detector. See Figure 8. VREF is the dc bias of the diode biased through the
external resistor used for temperature compensation of VDET. Refer to the typical application circuit for the
required external components (see Figure 83).
Detector Voltage for the Power Detector. See Figure 8. VDET is the dc voltage representing the RF output
power rectified by the diode, which is biased through an external resistor. Refer to the typical application
circuit for the required external components (see Figure 83).
VDET
14
RFOUT
Radio Frequency Output. See Figure 9. This pin is dc-coupled and matched to 50 Ω.
18, 19, 22, 25
VDRF4, VDRF3
DRF2, VDRF1
,
Power Supply Voltage for the Variable Gain Amplifier. See Figure 10. Refer to the typical application circuit
for the required external components (see Figure 83).
V
20, 21
26
VCTL2, VCTL1
Gain Control Voltage for the Variable Gain Amplifier. See Figure 11. Refer to the typical application circuit
for the required external components (see Figure 83).
Gate Voltage for the Variable Gain Amplifier. See Figure 12. Refer to the typical application circuit for the
required external components (see Figure 83).
VGRF
27
VESD
DC Voltage for ESD Protection. See Figure 13. Refer to the typical application circuit for the required
external components (see Figure 83).
28, 30
IF1, IF2
Quadrature IF Inputs. See Figure 14. For applications not requiring operation to dc, use an off chip dc
blocking capacitor. For operation to dc, these pins must not source/sink more than 3 mA of current or
device malfunction and failure may result.
EPAD
Exposed Pad. Connect to a low impedance thermal and electrical ground plane.
Rev. B | Page 5 of 24
HMC7912
Data Sheet
INTERFACE SCHEMATICS
RFOUT
V
GMIX
Figure 3. VGMIX Interface
Figure 9. RFOUT Interface
V
, V
, V
, V
DRF1
DRF2
DRF3 DRF4
GND
Figure 4. GND Interface
Figure 10. VDRF1, VDRF2, VDRF3, VDRF4 Interface
LOIN
V
V
CTL1, CTL2
Figure 5. LOIN Interface
Figure 11. VCTL1, VCTL2 Interface
V
, V
DLO1 DLO2
V
GRF
Figure 12. VGRF Interface
Figure 6. VDLO1, VDLO2 Interface
V
V
ESD
REF
Figure 7. VREF Interface
Figure 13. VESD Interface
V
IF1, IF2
DET
Figure 14. IF1, IF2 Interface
Figure 8. VDET Interface
Rev. B | Page 6 of 24
Data Sheet
HMC7912
TYPICAL PERFORMANCE CHARACTERISTICS
Data taken as SSB upconverter with external IF 90° hybrid at the IF ports, IF = 1 GHz.
20
18
16
14
12
10
8
20
18
16
14
12
10
8
LO = 0dBm
LO = 2dBm
LO = 4dBm
LO = 6dBm
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
6
21.0
6
21.0
21.5
22.0
22.5
23.0
23.5
24.0
21.5
22.0
22.5
23.0
23.5
24.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 15. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 4 dBm
Figure 18. Conversion Gain vs. RF Frequency at Various LO Powers
20
16
12
8
20
15
10
5
4
V
V
V
= –5.0V
= –4.8V
= –4.5V
V
V
V
= –4.3V
= –4.0V
= –3.8V
V
V
V
= –3.5V
= –3.3V
= –3.0V
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
0
–4
0
V
= –2.0V
= –1.8V
= –1.5V
V
V
V
= –2.8V
= –2.5V
= –2.3V
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
V
V
= –1.3V
= –1.0V
–5
CTLx
CTLx
V
V
–8
–10
–12
–16
–20
RF = 21GHz
RF = 22GHz
–15
RF = 23GHz
RF = 24GHz
–20
–5.0
21.0
21.5
22.0
22.5
23.0
23.5
24.0
–4.5
–4.0
–3.5
–3.0
–2.5
–2.0
–1.5
–1.0
RF FREQUENCY (GHz)
CONTROL VOLTAGE (V)
Figure 16. Conversion Gain vs. RF Frequency at Various Control Voltages,
LO = 4 dBm
Figure 19. Conversion Gain vs. Control Voltage at Various RF Frequencies,
LO = 4 dBm
40
35
30
25
20
15
10
40
35
30
25
20
15
10
LO = 0dBm
T
T
T
= +85°C
= +25°C
= –40°C
LO = 2dBm
LO = 4dBm
LO = 6dBm
A
A
A
5
5
0
21.0
0
21.0
21.5
22.0
22.5
23.0
23.5
24.0
21.5
22.0
22.5
23.0
23.5
24.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 17. Sideband Rejection vs. RF Frequency at Various Temperatures,
LO = 4 dBm
Figure 20. Sideband Rejection vs. RF Frequency at Various LO Powers
Rev. B | Page 7 of 24
HMC7912
Data Sheet
Data taken as SSB upconverter with external IF 90° hybrid at the IF ports, IF = 1 GHz.
25
23
21
19
17
15
13
11
9
40
38
36
34
32
30
28
26
24
22
20
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
7
5
21.0
21.5
22.0
22.5
23.0
23.5
24.0
21.0
21.5
22.0
22.5
23.0
23.5
24.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 21. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 4 dBm
Figure 24. Output IP3 vs. RF Frequency at Various Temperatures,
LO = 4 dBm
25
23
21
19
17
15
13
11
40
38
36
34
32
30
28
26
LO = 0dBm
9
LO = 0dBm
24
LO = 2dBm
LO = 2dBm
LO = 4dBm
LO = 6dBm
5
LO = 4dBm
LO = 6dBm
20
7
22
21.0
21.5
22.0
22.5
23.0
23.5
24.0
21.0
21.5
22.0
22.5
23.0
23.5
24.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 22. Input IP3 vs. RF Frequency at Various LO Powers
Figure 25. Output IP3 vs. RF Frequency at Various LO Powers
30
48
V
V
V
V
V
V
= –5.0V
= –4.8V
= –4.5V
= –4.3V
= –4.0V
= –3.8V
V
V
V
V
V
V
= –3.5V
= –3.3V
= –3.0V
= –2.8V
= –2.5V
= –2.3V
V
V
V
V
V
= –2.0V
= –1.8V
= –1.5V
= –1.3V
= –1.0V
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
28
26
24
22
20
18
16
14
12
10
8
44
40
36
32
28
24
20
16
12
8
V
V
V
V
V
V
= –5.0V
= –4.8V
= –4.5V
= –4.3V
= –4.0V
= –3.8V
V
V
V
V
V
V
= –3.5V
= –3.3V
= –3.0V
= –2.8V
= –2.5V
= –2.3V
V
V
V
V
V
= –2.0V
= –1.8V
= –1.5V
= –1.3V
= –1.0V
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
4
6
21.0
0
21.0
21.5
22.0
22.5
23.0
23.5
24.0
21.5
22.0
22.5
23.0
23.5
24.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 23. Input IP3 vs. RF Frequency at Various Control Voltages,
LO = 4 dBm
Figure 26. Output IP3 vs. RF Frequency at Various Control Voltages,
LO = 4 dBm
Rev. B | Page 8 of 24
Data Sheet
HMC7912
Data taken as SSB upconverter with external IF 90° hybrid at the IF ports, IF = 1 GHz.
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
RF = 21GHz
RF = 22GHz
RF = 23GHz
RF = 24GHz
RF = 21GHz
RF = 22GHz
RF = 23GHz
RF = 24GHz
0
–5.0
0
–5.0
–4.5
–4.0
–3.5
–3.0
–2.5
–2.0
–1.5
–1.0
–4.5
–4.0
–3.5
–3.0
–2.5
–2.0
–1.5
–1.0
CONTROL VOLTAGE (V)
CONTROL VOLTAGE (V)
Figure 27. Input IP3 vs. Control Voltage at Various RF Frequencies,
LO = 4 dBm
Figure 30. Output IP3 vs. Control Voltage at Various RF Frequencies,
LO = 4 dBm
10
26
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
8
6
24
22
20
18
16
14
12
10
4
2
0
–2
–4
–6
21.0
21.5
22.0
22.5
23.0
23.5
24.0
21.0
21.5
22.0
22.5
23.0
23.5
24.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 28. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 4 dBm
Figure 31. Output P1dB vs. RF Frequency at Various Temperatures,
LO = 4 dBm
25
25
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
23
21
19
17
15
13
11
9
23
21
19
17
15
13
11
9
7
7
5
21.0
5
1.0
21.5
22.0
22.5
23.0
23.5
24.0
1.5
2.0
2.5
3.0
3.5
RF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 29. Noise Figure vs. RF Frequency at Various Temperatures,
LO = 6 dBm
Figure 32. Noise Figure vs. IF Frequency at Various Temperatures,
LO = 6 dBm, LO Frequency = 19 GHz
Rev. B | Page 9 of 24
HMC7912
Data Sheet
Data taken as SSB upconverter with external IF 90° hybrid at the IF ports, IF = 2 GHz.
20
18
16
14
12
10
8
20
18
16
14
12
10
8
LO = 0dBm
LO = 2dBm
LO = 4dBm
LO = 6dBm
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
6
21.0
6
21.0
21.5
22.0
22.5
23.0
23.5
24.0
21.5
22.0
22.5
23.0
23.5
24.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 33. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 4 dBm
Figure 36. Conversion Gain vs. RF Frequency at Various LO Powers
20
16
12
8
20
15
10
5
4
V
V
V
= –5.0V
= –4.8V
= –4.5V
V
V
V
= –4.3V
= –4.0V
= –3.8V
V
V
V
= –3.5V
= –3.3V
= –3.0V
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
0
–4
0
V
= –2.0V
= –1.8V
= –1.5V
V
V
V
= –2.8V
= –2.5V
= –2.3V
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
V
V
= –1.3V
= –1.0V
–5
CTLx
CTLx
V
V
–8
–10
–12
–16
–20
RF = 21GHz
RF = 22GHz
–15
RF = 23GHz
RF = 24GHz
–20
–5.0
21.0
21.5
22.0
22.5
23.0
23.5
24.0
–4.5
–4.0
–3.5
–3.0
–2.5
–2.0
–1.5
–1.0
RF FREQUENCY (GHz)
CONTROL VOLTAGE (V)
Figure 34. Conversion Gain vs. RF Frequency at Various Control Voltages,
LO = 4 dBm
Figure 37. Conversion Gain vs. Control Voltage at Various RF Frequencies,
LO = 4 dBm
40
40
35
30
25
20
15
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
35
30
25
20
15
10
5
10
LO = 0dBm
LO = 2dBm
LO = 4dBm
5
LO = 6dBm
0
0
21.0
21.5
22.0
22.5
23.0
23.5
24.0
21.0
21.5
22.0
22.5
23.0
23.5
24.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 35. Sideband Rejection vs. RF Frequency at Various Temperatures,
LO = 4 dBm
Figure 38. Sideband Rejection vs. RF Frequency at Various LO Powers
Rev. B | Page 10 of 24
Data Sheet
HMC7912
Data taken as SSB upconverter with external IF 90° hybrid at the IF ports, IF = 2 GHz.
25
23
21
19
17
15
13
11
9
40
38
36
34
32
30
28
26
24
22
20
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
7
5
21.0
21.5
22.0
22.5
23.0
23.5
24.0
21.0
21.5
22.0
22.5
23.0
23.5
24.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 39. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 4 dBm
Figure 42. Output IP3 vs. RF Frequency at Various Temperatures,
LO = 4 dBm
25
23
21
19
17
15
13
11
40
38
36
34
32
30
28
26
LO = 0dBm
9
LO = 0dBm
24
LO = 2dBm
LO = 2dBm
LO = 4dBm
LO = 6dBm
5
LO = 4dBm
LO = 6dBm
20
7
22
21.0
21.5
22.0
22.5
23.0
23.5
24.0
21.0
21.5
22.0
22.5
23.0
23.5
24.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 40. Input IP3 vs. RF Frequency at Various LO Powers
Figure 43. Output IP3 vs. RF Frequency at Various LO Powers
30
28
26
24
22
20
18
16
14
12
10
48
V
V
V
V
V
= –5.0V
= –4.8V
= –4.5V
= –2.8V
= –2.5V
V
V
V
V
V
V
= –4.3V
= –4.0V
= –3.8V
= –2.3V
= –2.0V
= –1.8V
V
V
V
V
V
V
= –3.5V
= –3.3V
= –3.0V
= –1.5V
= –1.3V
= –1.0V
V
V
V
= –5.0V
= –4.8V
= –4.5V
V
V
V
= –4.3V
= –4.0V
= –3.8V
V
V
V
= –3.5V
= –3.3V
= –3.0V
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
44
40
36
32
28
24
20
16
12
8
V
= –2.0V
= –1.8V
= –1.5V
V
V
V
= –2.8V
= –2.5V
= –2.3V
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
V
V
= –1.3V
= –1.0V
V
CTLx
CTLx
4
V
0
21.0
21.0
21.5
22.0
22.5
23.0
23.5
24.0
21.5
22.0
22.5
23.0
23.5
24.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 41. Input IP3 vs. RF Frequency at Various Control Voltages,
LO = 4 dBm
Figure 44. Output IP3 vs. RF Frequency at Various Control Voltages,
LO = 4 dBm
Rev. B | Page 11 of 24
HMC7912
Data Sheet
Data taken as SSB upconverter with external IF 90° hybrid at the IF ports, IF = 2 GHz.
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
RF = 21GHz
RF = 22GHz
RF = 23GHz
RF = 24GHz
RF = 21GHz
RF = 22GHz
RF = 23GHz
RF = 24GHz
0
–5.0
0
–5.0
–4.5
–4.0
–3.5
–3.0
–2.5
–2.0
–1.5
–1.0
–4.5
–4.0
–3.5
–3.0
–2.5
–2.0
–1.5
–1.0
CONTROL VOLTAGE (V)
CONTROL VOLTAGE (V)
Figure 45. Input IP3 vs. Control Voltage at Various RF Frequencies,
LO = 4 dBm
Figure 48. Output IP3 vs. Control Voltage at Various RF Frequencies,
LO = 4 dBm
10
26
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
8
6
24
22
20
18
16
14
12
10
4
2
0
–2
–4
–6
21.0
21.5
22.0
22.5
23.0
23.5
24.0
21.0
21.5
22.0
22.5
23.0
23.5
24.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 46. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 4 dBm
Figure 49. Output P1dB vs. RF Frequency at Various Temperatures,
LO = 4 dBm
25
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
23
21
19
17
15
13
11
9
7
5
21.0
21.5
22.0
22.5
23.0
23.5
24.0
RF FREQUENCY (GHz)
Figure 47. Noise Figure vs. RF Frequency at Various Temperatures,
LO = 6 dBm
Rev. B | Page 12 of 24
Data Sheet
HMC7912
Data taken as SSB upconverter with external IF 90° hybrid at the IF ports, IF = 3 GHz.
20
18
16
14
12
10
8
20
18
16
14
12
10
8
LO = 0dBm
LO = 2dBm
LO = 4dBm
LO = 6dBm
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
6
21.0
6
21.0
21.5
22.0
22.5
23.0
23.5
24.0
21.5
22.0
22.5
23.0
23.5
24.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 50. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 4 dBm
Figure 53. Conversion Gain vs. RF Frequency at Various LO Powers
32
20
15
10
5
V
V
V
V
V
V
= –5.0V
= –4.8V
= –4.5V
= –4.3V
= –4.0V
= –3.8V
V
V
V
V
V
V
= –3.5V
= –3.3V
= –3.0V
= –2.8V
= –2.5V
= –2.3V
V
V
V
V
V
= –2.0V
= –1.8V
= –1.5V
= –1.3V
= –1.0V
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
28
24
20
16
12
8
0
4
0
–5
–4
–8
–12
–16
–20
–10
RF = 21GHz
RF = 22GHz
–15
RF = 23GHz
RF = 24GHz
–20
–5.0
–4.5
–4.0
–3.5
–3.0
–2.5
–2.0
–1.5
–1.0
21.0
21.5
22.0
22.5
23.0
23.5
24.0
CONTROL VOLTAGE (V)
RF FREQUENCY (GHz)
Figure 54. Conversion Gain vs. Control Voltage at Various RF Frequencies,
LO = 4 dBm
Figure 51. Conversion Gain vs. RF Frequency at Various Control Voltages,
LO = 4 dBm
40
35
30
25
20
15
40
35
30
25
20
15
10
10
LO = 0dBm
LO = 2dBm
LO = 4dBm
LO = 6dBm
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
5
5
0
21.0
0
21.0
21.5
22.0
22.5
23.0
23.5
24.0
21.5
22.0
22.5
23.0
23.5
24.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 55. Sideband Rejection vs. RF Frequency at Various LO Powers
Figure 52. Sideband Rejection vs. RF Frequency at Various Temperatures,
LO = 4 dBm
Rev. B | Page 13 of 24
HMC7912
Data Sheet
Data taken as SSB upconverter with external IF 90° hybrid at the IF ports, IF = 3 GHz.
25
23
21
19
17
15
13
11
9
40
38
36
34
32
30
28
26
24
22
20
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
7
5
21.0
21.5
22.0
22.5
23.0
23.5
24.0
21.0
21.5
22.0
22.5
23.0
23.5
24.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 56. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 4 dBm
Figure 59. Output IP3 vs. RF Frequency at Various Temperatures,
LO = 4 dBm
25
23
21
19
17
15
13
11
40
38
36
34
32
30
28
26
LO = 0dBm
9
LO = 0dBm
24
LO = 2dBm
LO = 2dBm
LO = 4dBm
LO = 6dBm
5
LO = 4dBm
LO = 6dBm
20
7
22
21.0
21.5
22.0
22.5
23.0
23.5
24.0
21.0
21.5
22.0
22.5
23.0
23.5
24.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 57. Input IP3 vs. RF Frequency at Various LO Powers
Figure 60. Output IP3 vs. RF Frequency at Various LO Powers
30
28
26
24
22
20
18
16
14
12
10
52
V
V
V
V
V
V
= –5.0V
= –4.8V
= –4.5V
= –4.3V
= –4.0V
= –3.8V
V
V
V
V
V
V
= –3.5V
= –3.3V
= –3.0V
= –2.8V
= –2.5V
= –2.3V
V
V
V
V
V
= –2.0V
= –1.8V
= –1.5V
= –1.3V
= –1.0V
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
V
V
V
= –5.0V
= –4.8V
= –4.5V
V
V
V
= –4.3V
= –4.0V
= –3.8V
V
V
V
= –3.5V
= –3.3V
= –3.0V
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
48
44
40
36
32
28
24
20
16
12
8
V
V
= –1.3V
= –1.0V
V
= –2.0V
= –1.8V
= –1.5V
V
= –2.8V
= –2.5V
= –2.3V
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
CTLx
V
V
4
V
V
0
21.0
21.0
21.5
22.0
22.5
23.0
23.5
24.0
21.5
22.0
22.5
23.0
23.5
24.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 58. Input IP3 vs. RF Frequency at Various Control Voltages,
LO = 4 dBm
Figure 61. Output IP3 vs. RF Frequency at Various Control Voltages,
LO = 4 dBm
Rev. B | Page 14 of 24
Data Sheet
HMC7912
Data taken as SSB upconverter with external IF 90° hybrid at the IF ports, IF = 3 GHz.
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
RF = 21GHz
RF = 22GHz
RF = 23GHz
RF = 24GHz
RF = 21GHz
RF = 22GHz
RF = 23GHz
RF = 24GHz
0
–5.0
0
–5.0
–4.5
–4.0
–3.5
–3.0
–2.5
–2.0
–1.5
–1.0
–4.5
–4.0
–3.5
–3.0
–2.5
–2.0
–1.5
–1.0
CONTROL VOLTAGE (V)
CONTROL VOLTAGE (V)
Figure 62. Input IP3 vs. Control Voltage at Various RF Frequencies,
LO = 4 dBm
Figure 65. Output IP3 vs. Control Voltage at Various RF Frequencies,
LO = 4 dBm
10
26
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
8
6
24
22
20
18
16
14
12
10
4
2
0
–2
–4
–6
21.0
21.5
22.0
22.5
23.0
23.5
24.0
21.0
21.5
22.0
22.5
23.0
23.5
24.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 63. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 4 dBm
Figure 66. Output P1dB vs. RF Frequency at Various Temperatures,
LO = 4 dBm
25
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
23
21
19
17
15
13
11
9
7
5
21.0
21.5
22.0
22.5
23.0
23.5
24.0
RF FREQUENCY (GHz)
Figure 64. Noise Figure vs. RF Frequency at Various Temperatures,
LO = 6 dBm
Rev. B | Page 15 of 24
HMC7912
Data Sheet
LEAKAGE PERFORMANCE
20
–10
–15
–20
–25
–30
–35
–40
–45
–50
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
15
10
5
0
–5
–10
17
18
19
20
21
22
23
24
17
18
19
20
21
22
23
24
LO FREQUENCY (GHz)
LO FREQUENCY (GHz)
Figure 67. 2× LO Leakage at RFOUT vs. LO Frequency at
Various Temperatures, LO = 4 dBm
Figure 70. 2× LO Leakage at IF1 vs. LO Frequency at
Various Temperatures, LO = 4 dBm
–10
–15
–20
–25
–30
–35
–40
–45
–50
–10
–15
–20
–25
–30
–35
–40
–45
–50
–55
–60
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
17
18
19
20
21
22
23
24
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
LO FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 68. 2× LO Leakage at IF2 vs. LO Frequency at
Various Temperatures, LO = 4 dBm
Figure 71. IF1 Leakage at RFOUT vs. IF Frequency at
Various Temperatures
–10
–15
–20
–25
–30
–35
–40
–45
–50
–55
–60
–65
–70
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IF FREQUENCY (GHz)
Figure 69. IF2 Leakage at RFOUT vs. IF Frequency at
Various Temperatures
Rev. B | Page 16 of 24
Data Sheet
HMC7912
RETURN LOSS PERFORMANCE
0
0
–5
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
–5
–10
–15
–20
–25
–30
–10
–15
–20
–25
–30
21.0
21.5
22.0
22.5
23.0
23.5
24.0
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
RF FREQUENCY (GHz)
LO FREQUENCY (GHz)
Figure 72. RF Return Loss vs. RF Frequency at Various Temperatures,
LO = 4 dBm at LO Frequency = 20 GHz
Figure 74. LO Return Loss vs. LO Frequency at Various Temperatures,
LO = 4 dBm
0
0
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
–5
–10
–15
–20
–25
–30
–35
–40
–5
–10
–15
–20
–25
–30
–35
–40
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 73. IF1 Return Loss vs. IF Frequency at Various Temperatures,
LO = 4 dBm at LO Frequency = 20 GHz
Figure 75. IF2 Return Loss vs. IF Frequency at Various Temperatures,
LO = 4 dBm at LO Frequency = 20 GHz
Rev. B | Page 17 of 24
HMC7912
Data Sheet
POWER DETECTOR PERFORMANCE
10
0.1
1
0.01
0.1
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
0.01
0.001
–16 –14 –12 –10 –8 –6 –4 –2
0
2
4
6
8
10
–16 –14 –12 –10 –8 –6 –4 –2
0
2
4
6
8
10
OUTPUT POWER (dBm)
OUTPUT POWER (dBm)
Figure 76. Detector Output Voltage (VREF − VDET) vs. Output Power at Various
Temperatures, LO = 17.5 GHz
Figure 79. Detector Sensitivity vs. Output Power at Various Temperatures,
LO = 17.5 GHz
10
0.1
1
0.01
0.1
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
0.01
–16 –14 –12 –10 –8 –6 –4 –2
0.001
–16 –14 –12 –10 –8 –6 –4 –2
0
2
4
6
8
10
0
2
4
6
8
10
OUTPUT POWER (dBm)
OUTPUT POWER (dBm)
Figure 77. Detector Output Voltage (VREF − VDET) vs. Output Power at Various
Temperatures, LO = 19 GHz
Figure 80. Detector Sensitivity vs. Output Power at Various Temperatures,
LO = 19 GHz
10
0.1
1
0.01
0.1
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
A
A
A
A
A
A
0.01
–16 –14 –12 –10 –8 –6 –4 –2
0.001
–16 –14 –12 –10 –8 –6 –4 –2
0
2
4
6
8
10
0
2
4
6
8
10
OUTPUT POWER (dBm)
OUTPUT POWER (dBm)
Figure 78. Detector Output Voltage (VREF − VDET) vs. Output Power at Various
Temperatures, LO = 20.5 GHz
Figure 81. Detector Sensitivity vs. Output Power at Various Temperatures,
LO = 20.5 GHz
Rev. B | Page 18 of 24
Data Sheet
HMC7912
M × N Spurious Output, RF = 24 GHz
SPURIOUS PERFORMANCE
IF = 1 GHz at IF input power = −6 dBm, LO frequency =
23 GHz at LO input = +4 dBm.
TA = 25°C, IF = 1 GHz, VDLOx = 5 V, VDRFx = 5 V, V CTLx = −5 V,
V
ESD = −5 V, VGMIX = −0.5 V.
N × LO
Mixer spurious products are measured in dBc from the RF
output power level. Spur values are (M × IF) + (N × LO). N/A
means not applicable.
0
1
2
3
4
5
0
1
2
3
4
5
N/A
4
0
N/A
N/A
N/A
N/A
N/A
N/A
N/A N/A N/A
N/A N/A N/A
N/A N/A N/A
N/A N/A N/A
N/A N/A N/A
N/A N/A N/A
59
74
91
90
113
M × N Spurious Outputs, RF = 21 GHz
39
58
70
80
IF = 1 GHz at IF input power = −6 dBm, LO frequency =
20 GHz at LO input power = +4 dBm.
M × IF
N × LO
0
N/A
53
1
2
3
4
5
0
1
2
3
4
5
5
0
66
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
IF = 2 GHz at IF input power = −6 dBm, LO frequency =
22 GHz at LO input power = +4 dBm.
52
73
37
52
M × IF
N × LO
90
66
85
0
1
2
3
4
5
101
114
77
95
0
1
2
3
4
5
N/A
5
0
64
N/A N/A N/A
N/A N/A N/A
N/A N/A N/A
N/A N/A N/A
N/A N/A N/A
N/A N/A N/A
102
N/A
60
61
73
93
113
N/A
N/A
N/A
N/A
N/A
44
61
74
86
IF = 2 GHz at IF input power = −6 dBm, LO frequency =
19 GHz at LO input power = +4 dBm.
M × IF
N × LO
0
N/A
61
1
2
3
4
5
0
1
2
3
4
5
11
73
N/A N/A N/A
N/A N/A N/A
N/A N/A N/A
N/A N/A N/A
N/A N/A N/A
N/A N/A N/A
IF = 3 GHz at IF input power = −6 dBm, LO frequency =
21 GHz at LO input power = +4 dBm.
N/A
44
66
63
51
M × IF
N × LO
79
60
74
0
N/A
56
1
2
3
4
5
115
114
81
N/A
N/A
0
1
2
3
4
5
4
0
58
N/A N/A N/A
N/A N/A N/A
N/A N/A N/A
N/A N/A N/A
N/A N/A N/A
N/A N/A N/A
91
N/A
N/A
N/A
N/A
47
57
49
69
84
76
IF = 3 GHz at IF input power = −6 dBm, LO frequency =
18 GHz at LO input = +4 dBm.
M × IF
81
88
N × LO
47
0
1
2
3
4
5
0
1
2
3
4
5
N/A
50
57
59
64
25
3
62
N/A
N/A
N/A
N/A
N/A
N/A
N/A N/A
N/A N/A
N/A N/A
N/A N/A
N/A N/A
N/A N/A
0
64
43
34
51
56
51
M × IF
N/A
N/A
N/A
Rev. B | Page 19 of 24
HMC7912
Data Sheet
THEORY OF OPERATION
The HMC7912 is a GaAs, pHEMT, MMIC I/Q upconverter with
an integrated LO buffer that upconverts intermediate frequencies
between dc and 3.5 GHz to radio frequencies between 21 GHz
and 24 GHz. LO buffer amplifiers are included on chip to allow
a typical LO drive level of only 4 dBm for full performance. The
LO path feeds a quadrature splitter followed by on-chip baluns
that drive the I and Q singly balanced cores of the passive mixers.
The RF output of the I and Q mixers are then summed through
an on-chip Wilkinson power combiner and relatively matched
to provide a single-ended 50 Ω output signal that is amplified
by the RF amplifiers to produce a dc-coupled and 50 Ω matched
RF output signal at the RFOUT port. A voltage attenuator precedes
the RF amplifiers for desired gain control.
The power detector feature provides a LO cancellation capability
to the level of −10 dBm. See Figure 82 for a functional block
diagram of the upconverter circuit architecture.
ESD
ESD
ESD
LOIN
V
V
I
DLO1
DLO2
ESD
ESD
ESD
ESD
V
V
V
V
DRF4
DRF1
DRF2
DRF3
2×
V
GMIX
RFOUT
V
V
DET
REF
V
V
V
CTL1
GRF CTL2
Q
ESD
ESD
ESD
ESD
ESD
ESD
Figure 82. Upconverter Circuit Architecture
Rev. B | Page 20 of 24
Data Sheet
HMC7912
APPLICATIONS INFORMATION
A typical lower sideband upconversion circuit is shown in
Figure 83. The lower sideband input signal is connected to the
input port of the 90° hybrid coupler. The isolated port is loaded
to 50 Ω. The external 90° hybrid splits the IF signal into I and Q
phase terms. The I and Q input signals enter the HMC7912 on
the IF1 and IF2 inputs. IF1 of the device is connected to the 0°
port of the hybrid coupler. IF2 is connected to the 90° port of
the hybrid coupler. The LO to RF leakage can be improved by
applying small dc offsets to the I/Q mixer cores via the VDC_IF1
and VDC_IF2 inputs. However, it is important to limit the applied
dc bias to avoid sourcing or sinking more than 3 mA of bias
current. Depending on the bias sources used, it may be prudent to
add series resistance to ensure that the applied bias current does
not exceed 3 mA.
4. Apply 5 V to Pin 9 (VDLO1) and Pin 10 (VDLO2).
5. Apply −5 V to Pin 20 (VCTL2) and Pin 21 (VCTL1). Adjust
CTL1 and VCTL2 between −5 V and 0 V depending on the
V
amount of attenuation desired.
6. Apply 5 V to Pin 18, Pin 19, Pin 22, and Pin 25 (VDRF4
,
V
DRF3, VDRF2, and VDRF1).
7. Adjust Pin 26 (VGRF) between −2 V and 0 V to achieve a
total amplifier quiescent drain current of 220 mA.
LOCAL OSCILLATOR NULLING
Broad LO nulling may be required to achieve optimum IP3 and
LO to RF isolation performance. This nulling is achieved by
applying dc voltages between −0.2 V and +0.2 V to the I and Q
ports to suppress the LO signal across the RF frequency band by
approximately 5 dBc to 10 dBc. To suppress the LO signal at the
RF port, use the following nulling sequence:
Biasing the power detector circuitry may degrade the IP3
performance. Therefore, to achieve optimum IP3 performance
it is recommended that the power detector of the HMC7912 be
kept in off mode.
1. Adjust VDC_IF1 between −0.2 V and +0.2 V and monitor the
LO leakage on the RF port. When the desired or maximum
level of suppression is achieved, proceed to Step 2.
2. Adjust VDC_IF2 between −0.2 V and +0.2 V and monitor the
LO leakage on the RF port until either the desired or the
maximum level of suppression is achieved.
3. If the desired level of the LO signal on the RF port has still
not been achieved, further tune each VDC_IF1 and VDC_IF2
independently to achieve the desired LO leakage. The
resolution of the voltage changed on the voltage of the
BIASING SEQUENCE
The HMC7912 uses buffer amplifiers in the LO and RF paths.
These active stages all use depletion mode pHEMTs. To ensure
transistor damage does not occur, use the following power-up
bias sequence:
1. Apply a −5 V bias to Pin 27 (VESD).
2. Apply a −2 V bias to Pin 26 (VGRF), which is a pinched
off state.
V
DC_IF1 and VDC_IF2 inputs must be in the millivolt range.
3. Apply a −0.5 V bias to Pin 1 (VGMIX). This bias can be
adjusted from −0.5 V to −1 V depending on the LO power
used to provide the optimum IP3 response of the mixer.
Rev. B | Page 21 of 24
HMC7912
Data Sheet
IF1
IF2
IFIN
100pF
100pF
HYBRID
COUPLER
V
V
DC_IF1
DC_IF2
33nH
33nH
100nF
100pF
100pF
100nF
V
ESD
100pF
100nF
4.7µF
+
V
GRF
100pF
100pF
100pF
100pF
100pF
100pF
100pF
100nF
100nF
100nF
100nF
100nF
100nF
100nF
4.7µF
+
+
V
DRF1
DRF2
CTL1
CTL2
DRF3
DRF4
4.7µF
4.7µF
4.7µF
4.7µF
4.7µF
4.7µF
32 31 30 29 28 27 26 25
V
V
V
V
V
V
GMIX
1
2
3
4
5
6
7
8
24
23
22
21
20
19
18
17
+
+
4.7µF
100nF
100pF
+
HMC7912
LOIN
+
+
9
10 11 12 13 14 15 16
GND
V
DLO1
+
+
4.7µF
4.7µF
100nF
100pF
+
V
DLO2
RFOUT
100nF
100pF
V
V
DET
REF
V
V
DET
+5V
100kΩ 100kΩ
–5V
V
V
REF
REF
10kΩ
10kΩ
DET
10kΩ
10kΩ
33kΩ
V
= V
– V
OUT
REF DET
VD_5V
100nF
33kΩ
+5V
100pF
ALTERNATE SUGGESTED CIRCUIT
Figure 83. Typical Application Circuit
Rev. B | Page 22 of 24
Data Sheet
HMC7912
EVALUATION PRINTED CIRCUIT BOARD
The circuit board used in this application must use RF circuit
design techniques. Signal lines must have 50 Ω impedance and
the package ground leads and exposed pad must be connected
directly to the ground plane similar to that shown in Figure 84.
Use a sufficient number of via holes to connect the top and
bottom ground planes. The evaluation circuit board shown in
Figure 84 is available from Analog Devices, Inc., upon request.
J3
J2
Q
I
L2
L1
C75
J6
C76
C70
+
VI
VQ
VADJUST
J5
C64
+
-5ESD
C62
VGRF
+
C30
8
C61
C49
4
6
C
4
+
U1
VDLNA
+
VDD2
C47
C
J1
C29
C28
C45
C17
C18
C15
C44
LOIN
C16
C13
C10
+
C11
1
VCTL1
C7
C
C8
C12
VCTL2
C2
+
+
4
VDLO1
6
5
C
C5
C3
C
J8
VDLO2
1
+
3
C9
C32
C
+
C6
VDD3
R1
C26
VDD4
VDREF
C77
+
+
C25
J7
C65
VD_5V
R2
C57
+
VDOUT
C78
C27
+
600-01346-00-2
J4
RFOUT
Figure 84. Evaluation Board Top Layer
Rev. B | Page 23 of 24
HMC7912
Data Sheet
OUTLINE DIMENSIONS
DETAIL A
(JEDEC 95)
5.10
5.00 SQ
4.90
0.30
0.25
0.18
PIN 1
PIN 1
TIONS
INDIC ATOR AREA OP
INDICATOR
(SEE DETAIL A)
25
32
24
1
0.50
BSC
3.80
3.70 SQ
3.60
EXPOSED
PAD
17
8
16
9
0.45
0.40
0.35
0.20 MIN
TOP VIEW
BOTTOM VIEW
3.50 REF
0.90
0.85
0.80
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
0.05 MAX
0.02 NOM
COPLANARITY
0.08
SECTION OF THIS DATA SHEET.
SEATING
PLANE
0.20 REF
COMPLIANT TO JEDEC STANDARDS MO-220-VHHD-4.
Figure 85. 32-Lead Lead Frame Chip Scale Package [LFCSP]
5 mm × 5 mm Body and 0.85 mm Package Height
(HCP-32-1)
Dimensions shown in millimeters
ORDERING GUIDE
Model1
Temperature Range
MSL Rating2
MSL3
Package Description
Package Option
HCP-32-1
HCP-32-1
HMC7912LP5E
HMC7912LP5ETR
EV1HMC7912LP5
−40°C to +85°C
−40°C to +85°C
32-Lead Lead Frame Chip Scale Package [LFCSP]
32-Lead Lead Frame Chip Scale Package [LFCSP]
Evaluation Assembly Board
MSL3
1 HMC7912LP5E and HMC7912LP5ETR are RoHS compliant parts.
2 The peak reflow temperature is 260°C. See the Absolute Maximum Ratings section, Table 2.
©2016–2018 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D13735-0-4/18(B)
Rev. B | Page 24 of 24
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