LTC6561DICE/DWF [ADI]

Analog Circuit;
LTC6561DICE/DWF
型号: LTC6561DICE/DWF
厂家: ADI    ADI
描述:

Analog Circuit

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中文:  中文翻译
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LTC6561 DICE/DWF  
Four-Channel Multiplexed Transimpedance  
Amplifier with Output Multiplexing  
24  
23  
22  
21  
PAD # PAD NAME X COORDINATE (µm) Y COORDINATE (µm)  
1
2
CHSEL1  
417.9  
302.9  
303.24  
303.24  
303.24  
303.24  
303.24  
303.24  
303.24  
303.24  
172.5  
V
CCO  
3
CHSEL0  
187.9  
1
2
3
4
20  
19  
18  
17  
4
V
CC1  
72.9  
5
V
–72.9  
REF1  
6
GND  
IN1  
–187.9  
–302.9  
–417.9  
–546.21  
–546.21  
–546.21  
–546.21  
–417.9  
–302.9  
–187.9  
–72.9  
7
8
GND  
IN2  
9
*(0, 0)  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
V
57.5  
16  
15  
14  
13  
5
6
7
8
REF2  
REF3  
V
–57.5  
IN3  
GND  
IN4  
–172.5  
–303.24  
–303.24  
–303.24  
–303.24  
–303.24  
–303.24  
–303.24  
–303.24  
–172.5  
–57.5  
GND  
DIE ID  
V
REF4  
V
CC2  
72.9  
O_MUX  
187.9  
9
10  
11  
12  
V
CCO  
302.9  
Die Size: 36mils (914.4µm)× 55mils (1397µm)  
Bond Pad Size: 4mils (102µm)× 4mils (102µm)  
Bond Pad Opening: 3.2mils (82µm)× 3.2mils (82µm)  
Bond Pad Metal Thickness: 0.29mils (7.4µm)  
Wafer Saw Street Width: 2.4mils (61µm)  
Wafer/Die Thickness: 8mils (200µm)  
Backside Metal: None  
DNC  
OUTTERM  
GND  
417.9  
546.21  
546.21  
546.21  
546.21  
GND  
57.5  
OUT  
172.5  
*Die center coordinate (0, 0)  
Backside Potential: V–  
All registered trademarks and trademarks are the property of their respective owners.  
FEATURES  
n
n
220MHz –3dB Bandwidth with 2pF Input Capacitance  
Single 5V Supply  
n
n
Single-Ended Output  
200mW Power Dissipation for 4 Channels  
n
n
74kΩ Transimpedance Gain  
2V Output Swing on 100Ω Load  
n
P-P  
n
4.8pA/√Hz Input Current Noise Density at  
Output MUX Combines Multiple 4-Channel Devices to  
Create 4, 8,12,16, 24, 32 Channel Solutions  
200MHz (2pF)  
n
64nA  
Integrated Input Current Noise Over  
RMS  
200MHz (2pF)  
APPLICATIONS  
n
n
n
n
Linear Input Range 0µA to 30µA  
Overload Current > 400mA Peak  
Fast Overload Recovery 12ns, 1mA  
Fast Channel Switchover < 50ns  
n
LIDAR Receiver  
Industrial Imaging  
n
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog  
Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications  
subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
1
LTC6561 DICE/DWF  
DESCRIPTION  
®
is needed and the device consumes only 200mW. Utilizing  
the internal 4-to-1 MUX along with the LTC6561’s output  
MUX; multiple 4-channel LTC6561 devices can be com-  
bined to directly interface with 12-, 16- and 32-channel  
APD arrays. The LTC6561’s fast overload recovery and  
fast channel switchover make it well suited for LIDAR  
receivers with multiple APDs. Its single-ended output can  
The LTC 6561 is a low-noise, four-channel, transimped-  
anceamplifier(TIA)with220MHzbandwidth.TheLTC6561  
multi-channel transimpedance amplifier’s low noise, high  
transimpedance, and low power dissipation are ideal for  
LIDARreceiversusingAvalanchePhotodiodes(APDs).The  
amplifier features 74kΩ transimpedance gain and 30µA  
linear input current range. Using an APD input circuit with  
a total capacitance of 2pF, the input current noise density  
is 4.8pA/√Hz at 200MHz. With lower capacitance, noise  
and bandwidth improve further. Only a 5V single supply  
swing 2V on a 100Ω load while its low impedance op  
P-P  
amp style output can drive back-terminated 50Ω cables.  
ABSOLUTE MAXIMUM RATINGS  
(Note 1)  
Total Supply Voltage (V , V , V  
to GND)......5.5V  
Amplifier Output Current (OUT, OUTTERM)..........+80mA  
Operating Temperature Range  
LTC6561............................................. –40°C to 125°C  
Storage Temperature Range................... –65°C to 150°C  
Junction Temperature ........................................... 150°C  
CC1 CC2 CCO  
Input Voltage (CHSEL0, CHSEL1, O_MUX).....–0.3V to 5.5V  
Amplifier Reference Current (V , V  
,
REF1 REF2  
)........................................................ 10mA  
Amplifier Input Current (IN1, IN2,  
V
, V  
REF3 REF4  
IN3, IN4)................. 400mA RMS 2A Transient (10ns)  
DIE CROSS REFERENCE  
FINISHED PART NUMBER  
ORDER PART NUMBER  
LTC6561 DICE/DWF  
LTC6561  
Please refer to ADI standard LTC6561 product data sheet for other applicable product information and typical performance information.  
AC ELECTRICAL CHARACTERISTICS TA = 25°C, VCC1,2 = VCC0 = 5V, O_MUX = 0V, GND = 0V, ZLOAD = 100Ω.  
Output taken from OUT pin.  
SYMBOL  
PARAMETER  
CONDITIONS  
200mV  
MIN  
TYP  
220  
74  
MAX  
UNITS  
MHz  
kΩ  
BW  
–3dB Bandwidth  
and C  
= 2pF  
P-P,OUT  
IN,TOT  
R
R
R
Small Signal Transimpedance  
Input Resistance  
I
< 2µA  
P-P  
63  
85  
T
IN  
f = 100kHz  
236  
3
Ω
IN  
Output Resistance  
f = 100kHz  
Ω
OUT  
I
Input Current Noise Density  
f = 100MHz, C  
f = 200MHz, C  
= 2pF  
= 2pF  
4.3  
4.8  
43  
pA/√Hz  
pA/√Hz  
n
IN,TOT  
IN,TOT  
Integrated Input Current Noise  
f = 0.1MHz to 100MHz, C  
f = 0.1MHz to 200MHz, C  
f = 100MHz  
= 2pF  
nA  
nA  
IN,TOT  
IN,TOT  
RMS  
= 2pF  
64  
RMS  
Adjacent Channel to Channel Isolation  
Non Adjacent Channel Isolation  
Overload Recovery Time  
–45  
–65  
12  
dB  
f = 100MHz  
dB  
ns  
ns  
t
t
Input Pulse <1mA  
RECOVER  
SWITCH  
Channel Switchover Time  
50  
2
LTC6561 DICE/DWF  
DC ELECTRICAL CHARACTERISTICS TA = 25°C, VCC1,2 = VCC0 = 5V, O_MUX = 0V, GND = 0V, ZLOAD = 100Ω.  
Output taken from OUT pin.  
SYMBOL  
PARAMETER  
Pins  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
IN1,2,3,4 Pins and V  
REF1,2,3,4  
V
V
Input Bias Voltage  
Active Channel  
1.43  
0.78  
1.55  
0.93  
1.64  
1.38  
V
V
IN  
Inactive Channel  
Input Reference Voltage  
Active Channel  
Inactive Channel  
1.43  
1.34  
1.55  
1.50  
1.63  
1.67  
V
V
REF  
Offset  
V
IN  
– V  
Active Channel  
Inactive Channel  
–12  
–741  
12  
–116  
mV  
mV  
REF  
OUT Pin  
V
OUT  
Output Default Voltage  
O_MUX = 0V (Output Enabled)  
O_MUX = 3.3V, Standalone Device  
0.83  
0.32  
1.10  
0.60  
1.47  
0.88  
V
V
OVR  
Output Voltage Range  
I
IN  
Current Range = 0 to –50µA  
1.22  
44  
1.90  
56  
2.58  
70.8  
V
P-P  
OUTTERM  
Internal Series Resistor for Optional Output  
Ω
CHSEL0, CHSEL1, O_MUX Pins with Internal Pull-Down Resistors  
V
V
0.7  
V
V
IL  
1.5  
16.9  
37  
IH  
I
I
Pin Voltage = 0.7V  
Pin Voltage = 1.5V  
20.7  
47  
26.0  
57  
µA  
µA  
pF  
IL  
IH  
C
IN  
1.5  
29  
R
22  
35  
kΩ  
IN  
Power Supply  
V
Operating Supply Range  
Input Supply Current  
Output Supply Current  
4.75  
29  
5
5.25  
44  
V
mA  
mA  
S
I
I
V
& V are Internally Tied Together  
36.3  
2.3  
CC1,2  
CC0  
CC1  
CC2  
Both V  
Together  
Pins are Internally Tied  
1.8  
2.8  
CCO  
I
Total Supply Current (I  
+ I )  
S(VCC0)  
30.8  
21  
38.6  
25  
46.8  
mA  
dB  
dB  
S
S(VCC1,2)  
PSRR(V  
PSRR(V  
)
Input Power Supply Rejection Ratio  
Output Power Supply Rejection Ratio  
V
V
= 4.75V to 5.25V, V  
= 5V  
= 5V  
CC1,2  
CC1,2  
CC0  
)
CC0  
= 4.75V to 5.25V, V  
34  
40  
CC0  
CC1,2  
Note 1: Stresses beyond those listed under Absolute Maximum Ratings  
may cause permanent damage to the device. Exposure to any Absolute  
Maximum Rating condition for extended periods may affect device  
reliability and lifetime.  
Note 2: All measurement were conducted in the dark.  
3
LTC6561 DICE/DWF  
PAD FUNCTIONS  
CHSEL1: MSB for Channel Selection. CMOS input. The  
CHSEL1 pad has a 29kΩ internal pull-down resistor.  
Default value is 0V.  
to V , it will float to a default voltage of approximately  
REF  
1.55V on a 5V supply. Each V pad should be bypassed  
REF  
withahighqualityceramicbypasscapacitorofatleast0.1µF.  
The bypass cap should be located close to its V pad.  
REF  
V
CCO  
:PositivePowerSupplyfortheOutputStage.Typically5V.  
CCO  
V
can be tied to V or V for single supply operation.  
GND: Negative Power Supply. Normally tied to ground.  
CC1  
CC2  
Between the positive supply and ground, bypass capacitors  
of 1000pF and 0.1µF should be placed as close to the part as  
IN1, IN2, IN3, IN4: Input Pad for Transimpedance Ampli-  
fier for Channels 1, 2, 3, and 4 Respectively. This pad is  
internally biased to 1.55V.  
possible. V  
pads are internally tied together.  
CCO  
CHSEL0: LSB for Channel Selection. CMOS input. The  
CHSEL0 pad has a 29kΩ internal pull-down resistor.  
Default value is 0V.  
O_MUX: Output MUX. CMOS Input. This pad is functional  
when multiple LTC6561s are combined at the output. When  
O_MUX is low, the output is enabled. When O_MUX is high,  
all 4 inputs are decoupled from the output. Default value is  
0V. This MUX pad is ineffective unless a 2nd LTC6561 is DC-  
coupledattheoutput. SeeApplicationssectiononhowtouse  
O_MUXtoexpandthechannelcountwithmultipleLTC6561’s.  
The O_MUX pad has a 29kΩ internal pull-down resistor.  
V
, V : Positive Power Supply. Typically 5V. Between  
CC1 CC2  
the positive supply and ground, bypass capacitors of  
1000pF and 0.1µF should be placed as close to the part  
as possible. V  
and V  
are internally tied together.  
CC1  
CC2  
V
, V  
, V  
, V  
: Reference Voltage Pad for  
REF1  
REF2  
REF3  
REF4  
Transimpedance Amplifier in Channel 1, 2, 3, and 4 Re-  
spectively. This pad sets the input DC voltage for each  
DNC: Do not connect.  
OUTTERM:TIAOutputwithanInternalSeries50ΩResistor.  
OUT: TIA Output without an internal series 50Ω Resistor.  
transimpedance amplifier. The V  
pad has a Thevenin  
REF  
equivalent resistance of approximately 1.4k and can be  
overdriven by an external voltage. If no voltage is applied  
BLOCK DIAGRAM  
V
V
CC1,2  
CCO  
IN1  
TIA  
TIA  
TIA  
TIA  
V
REF1  
IN2  
V
REF2  
OUT  
4:1  
MUX  
OUTPUT  
STAGE  
IN3  
V
REF3  
50Ω  
GAIN  
OUTTERM  
IN4  
V
REF4  
GND  
CHSEL0,1  
O_MUX  
6561 BD  
Wafer level testing is performed per indicated specifications for dice. Considerable differences in performance can often be observed for dice versus  
packaged units due to the influences of packaging and assembly on certain devices and/or parameters. Please consult factory for more information  
on dice performance and lot qualifications via lot sampling test procedures.  
Dice data sheet subject to change. Please consult factory for current revision in production.  
I.D.No. 66-13-6561  
01/19(0)  
www.analog.com  
4
ANALOG DEVICES, INC. 2019  

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