MAT02-000C [ADI]
TRANSISTOR 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, DIE-6, BIP General Purpose Small Signal;
| 型号： | MAT02-000C |
| 厂家： | 
ADI |
| 描述： | TRANSISTOR 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, DIE-6, BIP General Purpose Small Signal 晶体管 |
| 文件： | 总6页 (文件大小：188K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Low-Noise Matched Dual
Monolithic Transistor
MAT02
1.0
SCOPE
This specification documents the detailed requirements for Analog Devices space qualified die including
die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as
modified herein.
The manufacturing flow described in the STANDARD DIE PRODUCTS PROGRAM brochure at
http://www.analog.com/marketSolutions/militaryAerospace/pdf/Die_Broc.pdf is to be considered a part
of this specification.
This data sheet specifically details the space grade version of this product. A more detailed operational
description and a complete data sheet for commercial product grades can be found at
www.analog.com/MAT02
2.0
3.0
Part Number. The complete part number(s) of this specification follow:
Part Number
Description
MAT02-000C
Low-Noise Matched Dual Monolithic Transistor
Die Information
3.1
Die Dimensions
Bond Pad
Die Thickness
Die Size
Metalization
56 mil x 60 mil
19 mil ± 2 mil
Al/Cu
3.2
Die Picture
1. C1
2. B1
3. E1
4. E2
5. B2
6. C2
Substrate can be connected to V- or floated.
ASD0012815
Rev.G
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its use,
nor for any infringements of patents or other rights of third parties that may
result from its use. Specifications subject to change without notice. No license
is granted by implication or otherwise under any patent or patent rights of
Analog Devices. Trademarks and registered trademarks are the property of
their respective companies.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106,
U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.326.8703 © 2009 Analog Devices, Inc. All rights reserved.
MAT02
3.3
Absolute Maximum Ratings
Collector to Base Voltage (BVCBO)…............................... 40V
Collector to Emitter Voltage (BVCEO)..…......................... 40V
Emitter to Emitter Voltage (BVEE).................................... 40V
Collector Current (IC) ....................................................... 20mA
Emitter Current (IE) .......................................................... 20mA
Storage Temperature Range ............................................. -65°C to +150°C
Junction Temperature (TJ)………………………………..+150°C
Operating Ambient Temperature Range…........................ -55°C to +125°C
Absolute Maximum Ratings Notes:
1/ Stresses above the absolute maximum rating may cause permanent damage to the device.
Extended operation at the maximum levels may degrade performance and affect reliability.
Die Qualification
4.0
In accordance with class-K version of MIL-PRF-38534, Appendix C, Table C-II, except as
modified herein.
(a) Qual Sample Size and Qual Acceptance Criteria – 25/2
(b) Qual Sample Package – 6 Lead TO Package
(c) Pre-screen electrical test over temperature performed post-assembly prior to die qualification.
Table I - Dice Electrical Characteristics
Conditions
1/
Limit
Min
Limit
Max
Parameter
Symbol
Units
IC =1mA
500
500
400
VCB = 0V,
40V
Current Gain
hFE
IC =100µA
IC =10µA
IC =10µA, 100µA, 1mA;
CB = 0V
Current Gain Match 2/
Offset Voltage
2
%
∆ hFE
V
VOS
VCB = 0V
50
µV
∆ VOS
Offset Voltage vs. VCB
V
CB = 0V, 40V
25
µV
/∆ VCB
Offset Voltage vs. Collector
Current
25
∆ VOS /∆ IC
VCB =0V; IC =10µA, 1mA
µV
Input Offset Current
IOS
VCB = 0V, 40V
0.6
nA
∆ IOS
/∆ VCB
Offset Current vs. VCB
V
CB = 0V, 40V
70
pA/V
Bulk Emitter Resistance
rBE
0.5
Ω
ASD0012815 Rev. G | Page 2 of 6
MAT02
Table I - Dice Electrical Characteristics (Continued)
Conditions
1/
Limit
Min
Limit
Max
Parameter
Symbol
Units
Bias Current
IB
VCB = 0V, 40V
25
nA
V
Collector Saturation Voltage VCESAT
Breakdown Voltage BVCEO
0.1
IC = 1mA, IB = 100µA
40
V
IC =100µA
Table I Notes:
1/ VCB = 15V, IC = ±10µA, and TA = 25°C, unless otherwise specified.
2 / Current gain match (∆hFE) is defined as: ∆hFE= 100(∆ IB)hFEmin .
IC
ASD0012815 Rev. G | Page 3 of 6
MAT02
Table II - Electrical Characteristics for Qual Samples
Conditions
1/
Sub-
groups
Limit
Min
Limit
Max
Parameter
Symbol
Units
1
450
225
IC = 1mA; VCB = 0V, 40V
2, 3
1
450
175
350
125
IC =100µA, VCB = 0V, 40V
IC = 100µA, VCB = 15V
IC = 10µA; VCB = 0V, 40V
IC = 10µA; VCB = 15V
Current Gain
hFE
2, 3
1
2, 3
IC = 10µA, 100µA, 1mA; VCB
=
Current Gain Match 2/
Offset Voltage
1
3
%
∆ hFE
0V
1
60
90
VOS
VCB = 0V
VCB = 0V
µV
2, 3
Offset Voltage vs. Temperature
4/
TCVOS
0.4
40
40
µV/°C
µV
Offset Voltage vs. VCB
V
CB = 0V, 40V
1
1
∆ VOS /∆ VCB
∆ VOS /∆ IC
Offset Voltage vs. Collector
Current
VCB =0V; IC =10µA, 1mA
µV
1
1
Input Offset Current
IOS
VCB = 0V, 40V
nA
2, 3
10
∆ IOS
/∆ VCB
rBE
Offset Current vs. VCB
VCB = 0V, 40V
1
100
pA/V
Bulk Emitter Resistance
1
1
0.75
200
Ω
Collector Base Leakage Current
ICBO
VCB = 40V
pA
Collector Emitter Leakage
Current 3/
Collector-Collector Leakage
Current 3/
ICES
ICC
VCE = 40V, VBE = 0V
1
1
200
200
pA
pA
VCC = 40V
1
30
70
Bias Current
IB
VCB = 0V, 40V
nA
V
2, 3
Collector Saturation Voltage
Breakdown Voltage
VCESAT
BVCEO
1
1
0.1
IC = 1mA, IB = 100µA
IC = 100µA
40
Table II Notes:
1/ VCB = 15V, IC = ±10µA, and TA = 25°C, unless otherwise specified.
2./ Current gain match (∆hFE) is defined as: ∆hFE= 100(∆ IB)hFEmin .
IC
3./ ICC and ICES are verified by measurement of ICBO
.
4./ Guaranteed by VOS test （TCVOS≅ VOS for VOS<<VBE）T=298°K for TA=+25°C.
ASD0012815 Rev. G | Page 4 of 6
MAT02
Table III - Life Test Endpoint and Delta Parameter
(Product is tested in accordance with Table II with the following exceptions)
Life
Test
Delta
Post Burn In Limit
Post Life Test Limit
Sub-
groups
Parameter
Symbol
Units
Min
370
Max
Min
290
Max
1
±80
Current Gain @ 1mA
Current Gain @ 100µA
Current Gain @ 10µA
Input Offset Current
hFE
hFE
hFE
IOS
2, 3
1
145
270
135
360
250
±90
2, 3
1
150
75
±100
±0.5
2, 3
1
1.5
2
nA
2, 3
11.5
5.0
Life Test/Burn-In Information
5.1
5.2
5.3
HTRB is not applicable for this drawing.
Burn-in is per MIL-STD-883 Method 1015 test condition A, B, or C.
Steady state life test is per MIL-STD-883 Method 1005.
ASD0012815 Rev. G | Page 5 of 6
MAT02
Rev
A
B
C
D
E
Description of Change
Date
Initiate
Update web address
Feb. 28, 2002
Aug. 5, 2003
Oct. 15, 2004
Aug. 2, 2007
Feb. 19, 2008
Change Pin 4 from C2 to E2 and Pin 6 from E2 to C2
Update 1.0 Scope description.
Update header/footer & add to 1.0 Scope description
F
Add Junction Temperature(TJ)….150°C to 3.3 Absolute Max Ratings March 31, 2008
G
6-JUN-2009
Updated Section 4.0c note to indicate pre-screen temp testing being
performed.
© 2009 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective
companies.
Printed in the U.S.A.
06/09
ASD0012815 Rev. G | Page 6 of 6
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