OP186GRT-REEL7 [ADI]
IC OP-AMP, 6000 uV OFFSET-MAX, 0.17 MHz BAND WIDTH, PDSO5, SOT-23, 5 PIN, Operational Amplifier;
| 型号： | OP186GRT-REEL7 |
| 厂家： | 
ADI |
| 描述： | IC OP-AMP, 6000 uV OFFSET-MAX, 0.17 MHz BAND WIDTH, PDSO5, SOT-23, 5 PIN, Operational Amplifier 放大器 光电二极管 |
| 文件： | 总12页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
5 A, Rail-to-Rail
a
Output Operational Amplifier
OP186
FUNCTIONAL BLOCK DIAGRAM
5-Lead SOT-23
FEATURES
Low Supply Current: 5.5 A max
Single-Supply Operation: 2.2 V to 12 V
Wide Bandwidth: 160 kHz
Wide Input Voltage Range
Rail-to-Rail Output Swing
No Phase Reversal
(RT Suffix)
1
2
3
5
4
V–
OUT
V+
OP186
TOP VIEW
(Not to Scale)
+IN
–IN
Output Short Circuit Current: ؎10 mA
APPLICATIONS
Portable Phones
Comparator
Battery Powered Instrumentation
Safety Monitoring
Remote Sensors
Low Voltage Strain Gauge Amplifiers
GENERAL DESCRIPTION
The OP186 is a single, low voltage, ultralow power single-
supply, amplifier featuring rail-to-rail outputs. Specifications are
guaranteed at +2.2 V, +2.7 V, and +5.0 V single supply as well
as ±5 V dual supplies.
Fabricated on Analog Device’s CBCMOS process, the OP186
features a bipolar input and an output that swings to within
millivolts of the supplies while continuing to sink or source
current all the way to the supplies.
Applications for these amplifiers include safety monitoring,
portable equipment, battery and power supply control, and as
signal conditioning and interface for transducers in very low
power systems.
The output’s ability to swing rail-to-rail and not increase supply
current when the output is driven to a supply enables the
OP186 to be used as a comparator in very low power systems.
The OP186 is specified over the extended industrial (–40°C to
+125°C) temperature range. The OP186 is available in the
SOT-23-5 package.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
Fax: 781/326-8703
World Wide Web Site: http://www.analog.com
© Analog Devices, Inc., 1998
OP186–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (VS = +2.2 V, VCM = +1.1 V, TA = +25؇C unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ Max
Units
INPUT CHARACTERISTICS
Offset Voltage
1
VOS
0.8
3
5
6
7
10
2
mV
mV
nA
nA
nA
nA
0°C ≤ TA ≤ +125°C
0°C ≤ TA ≤ +125°C
0°C ≤ TA ≤ +125°C
Input Bias Current
Input Offset Current
IB
IOS
0.1
5
Input Voltage Range
Common-Mode Rejection Ratio
VCM
CMRR
0
1.2
V
dB
dB
V/mV
V/mV
µV/°C
pA/°C
pA/°C
VCM = 0 V to 1.2 V
0°C ≤ TA ≤ +125°C
RL = 1 MΩ , VO = 0.3 V to 1.9 V
0°C ≤ TA ≤ +125°C
65
60
5
90
18
Large Signal Voltage Gain
AVO
2
Offset Voltage Drift
Bias Current Drift
Offset Current Drift
∆VOS/∆T
∆IB/∆T
∆IOS/∆T
3.5
30
3
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
VOL
ISC
RL = 100 kΩ to GND
0°C to +125°C
RL = 100 kΩ to V+
0°C to +125°C
2.125 2.16
V
V
mV
mV
µA
2.1
Output Voltage Low
Short Circuit Limit
25
60
75
±500
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
ISY
VS = 2.2 V to 12 V
0°C ≤ TA ≤ +125°C
78
76
95
4
dB
dB
µA
µA
Supply Current/Amplifier
5
5.5
0°C ≤ TA ≤ +125°C
DYNAMIC PERFORMANCE
Slew Rate
Turn-On Time
SR
RL = 100 kΩ, CL = 15 pF
AV = 1, VO = 1
60
17
V/ms
µs
AV = 20, VO = 1
35
150
60
µs
kHz
Degrees
Gain Bandwidth Product
Phase Margin
GBP
Φo
NOISE PERFORMANCE
Voltage Noise Density
Current Noise Density
en
in
f = 1 kHz
80
<1
nV/√Hz
pA/√Hz
NOTE
1VOS is tested under a no load condition.
Specifications subject to change without notice.
–2–
REV. 0
OP186
(V = +2.7 V, VCM = +1.35 V, TA = +25؇C unless otherwise noted)1
ELECTRICAL CHARACTERISTICS
S
Parameter
Symbol
Conditions
Min
Typ Max
Units
INPUT CHARACTERISTICS
Offset Voltage
2
VOS
IB
0.6
3
5
6
7
10
2
mV
mV
nA
nA
nA
nA
–40°C ≤ TA ≤ +125°C
–40°C ≤ TA ≤ +125°C
–40°C ≤ TA ≤ +125°C
Input Bias Current
Input Offset Current
IOS
0.1
5
Input Voltage Range
Common-Mode Rejection Ratio
VCM
CMRR
0
1.7
V
dB
dB
V/mV
V/mV
µV/°C
pA/°C
pA/°C
VCM = 0 V to 1.7 V
65
60
5
90
22
–40°C ≤ TA ≤ +125°C
RL = 1 MΩ, VO = 0.3 V to 2.4 V
–40°C ≤ TA ≤ +125°C
Large Signal Voltage Gain
AVO
2
Offset Voltage Drift
Bias Current Drift
Offset Current Drift
∆VOS/∆T
∆IB/∆T
∆IOS/∆T
3.5
30
3
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
VOL
ISC
RL = 100 kΩ to GND
–40°C to +125°C
RL = 100 kΩ to V+
–40°C to +125°C
2.625 2.665
V
V
mV
mV
mA
2.6
Output Voltage Low
Short Circuit Limit
22
50
75
±0.8
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
ISY
VS = 2.7 V to 12 V
–40°C ≤ TA ≤ +125°C
78
76
95
dB
dB
µA
µA
Supply Current/Amplifier
4.2
5.5
7
–40°C ≤ TA ≤ +125°C
DYNAMIC PERFORMANCE
Slew Rate
Turn-On Time
SR
RL =100 kΩ, CL = 15 pF
AV = 1, VO = 1
61
17
V/ms
µs
AV = 20, VO = 1
25
155
59
µs
kHz
Degrees
Gain Bandwidth Product
Phase Margin
GBP
Φo
NOISE PERFORMANCE
Voltage Noise Density
Current Noise Density
en
in
f = 1 kHz
80
<1
nV/√Hz
pA/√Hz
NOTES
1+2.7 V specifications are guaranteed by +2.2 V and ±5 V testing.
2VOS is tested under a no load condition.
Specifications subject to change without notice.
REV. 0
–3–
OP186–SPECIFICATIONS
(V = +5.0 V, VCM = +2.5 V, TA = +25؇C unless otherwise noted)1
ELECTRICAL CHARACTERISTICS
S
Parameter
Symbol
Conditions
Min
Typ Max
Units
INPUT CHARACTERISTICS
Offset Voltage
2
VOS
0.6
3
5
6
7
10
2
mV
mV
nA
nA
nA
nA
–40°C ≤ TA ≤ +125°C
–40°C ≤ TA ≤ +125°C
–40°C ≤ TA ≤ +125°C
Input Bias Current
Input Offset Current
IB
IOS
0.1
5
Input Voltage Range
Common-Mode Rejection Ratio
VCM
CMRR
0
4
V
dB
dB
V/mV
V/mV
µV/°C
pA/°C
pA/°C
VCM = 0 V to 4.0 V
65
60
5
90
40
–40°C ≤ TA ≤ +125°C
RL = 1 MΩ, VO = 0.5 V to 4.5 V
–40°C ≤ TA ≤ +125°C
–40°C ≤ TA ≤ +125°C
Large Signal Voltage Gain
AVO
2
Offset Voltage Drift
Bias Current Drift
Offset Current Drift
∆VOS/∆T
∆IB/∆T
∆IOS/∆T
3.3
25
3
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
VOL
ISC
RL = 100 kΩ to GND
–40°C ≤ TA ≤ +125°C
RL = 100 kΩ to V+
4.925 4.965
4.9
20
V
V
mV
mV
mA
Output Voltage Low
Short Circuit Limit
50
75
–40°C ≤ TA ≤ +125°C
±3.5
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
ISY
VS = 2.7 V to 12 V
–40°C ≤ TA ≤ +125°C
78
76
95
dB
dB
µA
µA
Supply Current/Amplifier
4.7
6
7.5
–40°C ≤ TA ≤ +125°C
DYNAMIC PERFORMANCE
Slew Rate
Gain Bandwidth Product
Phase Margin
SR
GBP
Φo
RL = 100 kΩ, CL = 15 pF
62
155
59
V/ms
kHz
Degrees
Saturation Recovery Time
60
µs
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
en p-p
en
0.1 Hz to 10 Hz
f = 1 kHz
f = 10 kHz
6
µV p-p
80
70
<1
nV/√Hz
nV/√Hz
pA/√Hz
Current Noise Density
in
NOTES
1+5 V specifications are guaranteed by +2.2 V and ± 5 V testing.
2VOS is tested under a no load condition.
Specifications subject to change without notice.
–4–
REV. 0
OP186
(VS = ؎5.0 V, TA = +25؇C unless otherwise noted)
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Conditions
Min
Typ Max
Units
INPUT CHARACTERISTICS
Offset Voltage
1
VOS
IB
0.6
3
5
6
7
10
2
mV
mV
nA
nA
nA
nA
–40°C ≤ TA ≤ +125°C
–40°C ≤ TA ≤ +125°C
–40°C ≤ TA ≤ +125°C
Input Bias Current
Input Offset Current
IOS
0.1
5
Input Voltage Range
Common-Mode Rejection
VCM
CMRR
–5
65
60
50
10
+4
V
dB
dB
V/mV
V/mV
µV/°C
pA/°C
pA/°C
VCM = –5.0 V to +4.0 V
–40°C ≤ TA ≤ +125°C
RL = 1 MΩ, VO = ±4.0 V,
–40°C ≤ TA ≤ +125°C
90
Large Signal Voltage Gain
AVO
250
Offset Voltage Drift
Bias Current Drift
Offset Current Drift
∆VOS/∆T
∆IB/∆T
∆IOS/∆T
3
25
3
OUTPUT CHARACTERISTICS
Output Voltage Swing
VO
ISC
RL = 100 kΩ to GND
–40°C to +125°C
±4.95 ±4.98
±4.90
V
V
mA
Short Circuit Limit
±10
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
ISY
VS = ±1.35 V to ±6 V
–40°C ≤ TA ≤ +125°C
VO = 0 V
78
76
95
dB
dB
µA
µA
Supply Current/Amplifier
5.2
7
8
–40°C ≤ TA ≤ +125°C
DYNAMIC PERFORMANCE
Slew Rate
Gain Bandwidth Product
Phase Margin
±SR
GBP
Φo
RL = 100 kΩ, CL = 15 pF
62
170
58
V/ms
kHz
Degrees
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
en p-p
en
0.1 Hz to 10 Hz
f = 1 kHz
f = 10 kHz
6
µV p-p
80
70
<1
nV/√Hz
nV/√Hz
pA/√Hz
Current Noise Density
in
NOTE
1VOS is tested under a no load condition.
Specifications subject to change without notice.
REV. 0
–5–
OP186
ABSOLUTE MAXIMUM RATINGS1
1
Package Type
Units
JA
JC
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +16 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . GND to VS + 10 V
Differential Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . ±3.5 V
Output Short-Circuit Duration to GND . . . . . . . . . Indefinite
Storage Temperature Range
5-Lead SOT-23 (RT)
230
140
°C/W
NOTE
1θJA is specified for worst case conditions, i.e., θJA is specified for device in socket
for SOT packages.
RT Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range
ORDERING GUIDE
OP186G . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +125°C
Junction Temperature Range
RT Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) . . . . . . .+300°C
Temperature
Range
Package
Description
Package
Option
Model
OP186GRT –40°C to +125°C 5-Lead SOT-23
RT-5
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect device reliability.
2For supplies less than ± 5 V the differential input voltage is limited to the supplies.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the OP186 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
–6–
REV. 0
Typical Performance Characteristics–
OP186
45
45
40
35
45
40
35
V
T
= +5V
V
T
= +2.2V
V
T
= +2.7V
S
= +25؇C
A
S
S
40
35
= +25؇C
= +25؇C
A
A
30
25
20
15
10
5
30
25
20
15
10
5
30
25
20
15
10
5
0
0
0
؊2 ؊1.5 ؊1 ؊0.5
0
0.5
1
1.5
2
؊2 ؊1.5 ؊1 ؊0.5
0
0.5
1
1.5
2
؊2 ؊1.5 ؊1 ؊0.5
0
0.5
1
1.5
2
INPUT OFFSET VOLTAGE – mV
INPUT OFFSET VOLTAGE – mV
INPUT OFFSET VOLTAGE – mV
Figure 3. Input Offset Voltage
Distribution
Figure 1. Input Offset Voltage
Distribution
Figure 2. Input Offset Voltage
Distribution
0
؊1
؊2
45
350
300
V
T
= ؎5V
S
40
35
= +25؇C
V
= +2.2V
A
S
250
200
30
25
20
15
10
5
V
= +2.2V
S
؊3
؊4
؊5
؊6
؊7
150
100
50
V
= ؎5V
S
V
= +2.7V
S
V
= ؎5V
S
0
؊50
0
؊100
0
20 40 60 80 100 120 140
TEMPERATURE – ؇C
؊40 ؊20
؊2 ؊1.5 ؊1 ؊0.5
0
0.5
1
1.5
2
؊40 ؊20
0
20 40 60 80 100 120 140
TEMPERATURE – ؇C
INPUT OFFSET VOLTAGE – mV
Figure 6. Input Bias Current vs.
Temperature
Figure 5. Input Offset Voltage vs.
Temperature
Figure 4. Input Offset Voltage
Distribution
1.0
0
0.4
0.3
V
T
= +5V
S
0.5
0
= +25؇C
؊1
A
؊2
؊3
؊4
؊5
؊6
؊7
0.2
0.1
V = +2.7V, +5V
S
؊0.5
؊1.0
؊1.5
؊2.0
؊2.5
V
= +2.7V
S
0
–0.1
–0.2
–0.3
V
= ؎5.5V
S
؊3.0
؊3.5
؊4.0
0
20 40 60 80 100 120 140
؊20
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
COMMON-MODE VOLTAGE – Volts
؊40
0
20 40 60 80 100 120 140
–40 –20
TEMPERATURE – ؇C
TEMPERATURE – ؇C
Figure 7. Input Bias Current vs.
Temperature
Figure 8. Input Bias Current vs.
Common-Mode Voltage
Figure 9. Input Offset Current vs.
Temperature
REV. 0
–7–
OP186
1k
1k
1k
V
T
= +5V
V
T
= +2.7V
V
T
= ؎5V
S
= +25؇C
A
S
S
= +25؇C
= +25؇C
A
A
100
100
100
SOURCE
SOURCE
SOURCE
SINK
SINK
SINK
10
1
10
1
10
1
0.1
0.1
0.1
1
10
100
1000
1
10
100
1000
1
10
100
1000
LOAD CURRENT – A
LOAD CURRENT – A
LOAD CURRENT – A
Figure 11. Output Voltage to Supply
Rail vs. Load Current
Figure 12. Output Voltage to Supply
Rail vs. Load Current
Figure 10. Output Voltage to Supply
Rail vs. Load Current
70
70
70
V
T
= ؎5V
S
V
T
= +5V
V
T
= +2.2V
= +25؇C
= 100k⍀
S
S
60
60
50
40
30
20
10
60
50
40
= +25؇C
= 100k⍀
= +25؇C
= 100k⍀
A
A
A
50
40
R
R
R
L
L
L
GAIN
GAIN
GAIN
0
0
0
30
20
45
45
30
20
45
90
90
90
PHASE
PHASE
PHASE
135
10
0
135
180
10
135
180
225
270
0
–10
–20
–30
180
225
270
0
–10
–20
–30
225
270
؊10
؊20
؊30
100
1k
10k
100k
1M
100
1k
10k
100k
FREQUENCY – Hz
1M
100
1k
10k
100k
FREQUENCY – Hz
1M
FREQUENCY – Hz
Figure 13. Open-Loop Gain and
Phase vs. Frequency
Figure 14. Open-Loop Gain and
Phase vs. Frequency
Figure 15. Open-Loop Gain and
Phase vs. Frequency
50
120
100
80
60
40
20
0
120
T
= +25؇C
A
+2.7V Յ V Յ +5V
V
T
= +5V
= +25؇C
=
S
S
+2.7V Յ V Յ +5V
S
T
= +25؇C
R
=
A
40
30
L
A
R
100
80
L
20
10
60
40
20
0
–10
–20
–30
10
100
1k
10k
100k
1M
100
1k
10k
100k
1M
10
100k
FREQUENCY – HZ
1M
10M
1k
10k
FREQUENCY – Hz
FREQUENCY – Hz
Figure 16. Closed-Loop Gain vs.
Frequency
Figure 17. CMRR vs. Frequency
Figure 18. PSRR vs. Frequency
–8–
REV. 0
OP186
65
3
2
5
V
V
A
R
= +5V
= 100mV p-p
S
60
55
50
45
40
IN
= +1
VCL
4
3
2
= 100k⍀
= +25؇C
L
+OS
V
= +5V
= 4V p-p
= +1
S
T
A
V
IN
A
R
VCL
؊OS
35
30
25
20
15
10
=
L
T
= +25؇C
A
V
= +2.7V
= 2V p-p
= +1
S
V
IN
A
R
1
0
VCL
=
L
T
= +25؇C
A
1
0
5
0
10
100
CAPACITANCE – pF
1000
10
100
1k
10k
100k
10
100
1k
FREQUENCY – Hz
10k
100k
FREQUENCY – Hz
Figure 19. Small Signal Overshoot
vs. Load Capacitance
Figure 20. Maximum Output Swing
vs. Frequency
Figure 21. Maximum Output Swing
vs. Frequency
6
6.5
6
4.5
4.25
4
T
= +25؇C
5.5
5
A
4.5
4
5.5
3.75
= ؎5V
V
S
3.5
3.5
3
5
4.5
4
V
= +5V
S
3.25
2.5
2
3
2.75
1.5
1
2.5
V
= +2.2V
V
= +5V
=
= +25؇C
S
S
3.5
R
T
L
2.25
2
0.5
0
V
= +2.7V
0
S
A
3
0
0.5
1
1.5
2 2.5 3 3.5 4 4.5 5 5.5 6
20 40 60 80 100 120 140
2.5
3
0
0.5
1
1.5
2
3.5 4 4.5 5 5.5 6
–40 –20
COMMON MODE VOLTAGE – V
SUPPLY VOLTAGE – ؎V
TEMPERATURE – ؇C
Figure 23. Supply Current vs. Supply
Voltage
Figure 24. Supply Current vs.
Common-Mode Voltage
Figure 22. Bias Current vs.
Temperature
V
S
= ؎1.35V
= +1
V
= +5V
= +1
V
= +2.7V
= +1
S
S
A
R
C
T
A
R
C
T
A
R
C
T
V
L
L
V
L
L
V
L
L
= 100k⍀
= 50pF
= +25؇C
= 100k⍀
= 50pF
= +25؇C
= 100k⍀
= 50pF
= +25؇C
A
A
A
50mV
100s
500mV
100s
1.0V
100s
Figure 27. Small Signal Transient
Response
Figure 25. Large Signal Transient
Response
Figure 26. Large Signal Transient
Response
REV. 0
–9–
OP186
V
= +5V
S
T
= +25؇C
A
V
= ؎1.35V
S
A
= CIRCUIT
VOL
V
= ؎2.5V
= +1
S
V
= ؎1V p-p
IN
A
R
C
V
L
R
=
L
= 100k⍀
= 50pF
= +25؇C
T
= +25؇C
A
L
T
A
500mV
100s
50mV
100s
1.0V
200s
Figure 30. Saturation Recovery Time
Figure 28. Small Signal Transient
Response
Figure 29. No Phase Reversal
1.0V
100s
V
= –2.5V
S
A
= CIRCUIT
VOL
V
= –1V p-p
IN
R
=
L
T
= +25؇C
A
Figure 31. Saturation Recovery Time
APPLICATIONS
The OP186 is very similar in design to the OP181. Please see the
OP181/OP281/OP481 data sheet for applications information.
Design of the OP186 was based on the OP181. The major dif-
ference is that the trim structures have been removed. This
results in the offset of the OP186 being higher than the OP181.
There are no other major changes to the circuit. Other perfor-
mance differences, such as the higher bandwidth and slightly
higher supply current, also result from the removal of the trim
resistors.
–10–
REV. 0
OP186
SPICE MODEL
RPS1 70 0 1E6
RPS2 71 0 1E6
CPS1 99 70 1E-5
CPS2 50 71 1E-5
* OP186 SPICE Macro-model Typical Values
* 2/98, Ver. 1
* TAM / ADSC
*
EPSY 98 72 POLY(2) (70,0) (0,71) 0 1 1
RPS3 72 73 1.59E6
* Copyright 1998 by Analog Devices
*
CPS3 72 73 500E-12
RPS4 73 98 15.9
* Refer to “README.DOC” file for License State-
* ment. Use of this
*
* model indicates your acceptance of the terms
* and provisions in
* INTERNAL VOLTAGE REFERENCE
*
* the License Statement.
EREF 98 0 POLY(2) (99,0) (50,0) 0 .5 .5
*
GSY 99 50 POLY(1) (99,50) 2E-6 .1E-6
* Node Assignments
*
*
noninverting input
* POLE AT 600kHz; ZERO AT 900kHz
*
|
|
|
|
|
|
1
inverting input
*
*
|
|
|
|
|
2
positive supply
G1 98 20 (4,6) 11.3E-6
*
|
negative supply
R1 20 98 88.46E3
*
|
|
|
|
output
R2 20 21 176.8E3
*
|
|
|
C2 21 98 1E-12
*
|
*
.SUBCKT OP186
99
50 45
* GAIN STAGE
*
*
* INPUT STAGE
*
G4 98 30 (20,98) 19.54E-6
R7 30 98 111.6E6
Q1
Q2
4
6
1 3 PIX
7 5 PIX
CF 45 30 32E-12
D3 30 31 DX
RC1 4 50 100E3
RC2 6 50 100E3
D4 32 30 DX
V3 99 31 0.6
RE1
RE2
C1
3
5
4
8 6.452E3
8 6.452E3
6 50E-15
V4 32 50 0.6
*
* OUTPUT STAGE
I1 99 8 1E-6
*
EOS
IOS
7
1
2 POLY(2) (12,98) (73,98) 800E-6 1 1
2 50E-12
M1 45 46 99 99 POX L=2u W=100u
M2 45 47 50 50 NOX L=2u W=98u
EG1 99 46 POLY(1) (98,30) 0.82 1
EG2 47 50 POLY(1) (30,98) 0.79 1
*
V1 99 9 0.9
V2 99 10 0.9
D1
D2
*
3
9 DX
5 10 DX
* MODELS
*
* CMRR 90dB, ZERO AT 1kHz
.MODEL POX PMOS (LEVEL=2, KP=10E-6,
+ VTO=-0.75, LAMBDA=0.01)
.MODEL NOX NMOS (LEVEL=2, KP=17E-6,
+ VTO=0.75, LAMBDA=0.01)
.MODEL PIX PNP (BF=185,KF=1.6E-12,AF=1)
.MODEL DX D(IS=1E-14)
.ENDS OP186
*
ECM1 11 98 POLY(2) (1,98) (2,98) 0 .5 .5
RCM1 11 12 1.59E6
CCM1 11 12 100E-12
RCM2 12 98 50
*
* PSRR=100dB, ZERO AT 200Hz
*
REV. 0
–11–
OP186
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
5-Lead SOT-23
(RT Suffix)
0.1181 (3.00)
0.1102 (2.80)
5
1
4
3
0.1181 (3.00)
0.1024 (2.60)
0.0669 (1.70)
0.0590 (1.50)
2
PIN 1
0.0374 (0.95) BSC
0.0748 (1.90)
BSC
0.0079 (0.20)
0.0031 (0.08)
0.0512 (1.30)
0.0354 (0.90)
0.0571 (1.45)
0.0374 (0.95)
10؇
0؇
SEATING
PLANE
0.0197 (0.50)
0.0138 (0.35)
0.0059 (0.15)
0.0019 (0.05)
0.0217 (0.55)
0.0138 (0.35)
–12–
REV. 0
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