SSM2211CP-R2 [ADI]
Low Distortion, 1.5 W Audio Power Amplifier; 低失真， 1.5瓦音频功率放大器
| 型号： | SSM2211CP-R2 |
| 厂家： | 
ADI |
| 描述： | Low Distortion, 1.5 W Audio Power Amplifier |
| 文件： | 总24页 (文件大小：507K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Low Distortion, 1.5 W Audio
Power Amplifier
SSM2211
FUNCTIONAL BLOCK DIAGRAM
FEATURES
1.5 W output1
Differential (BTL2) output
IN–
Single-supply operation: 2.7 V to 5.5 V
Functions down to 1.75 V
V
A
B
OUT
IN+
Wide bandwidth: 4 MHz
Highly stable phase margin: >80 degrees
Low distortion: 0.2% THD + N @ 1 W output
Excellent power supply rejection
V
OUT
BYPASS
APPLICATIONS
SHUTDOWN
BIAS
Portable computers
SSM2211
Personal wireless communicators
Hands-free telephones
Speaker phones
V– (GND)
Figure 1.
Intercoms
Musical toys and talking games
GENERAL DESCRIPTION
The SSM22113 is a high performance audio amplifier that
delivers 1 W rms of low distortion audio power into a bridge-
connected 8 Ω speaker load (or 1.5 W rms into a 4 Ω load).
It operates over a wide temperature range and is specified for
single-supply voltages between 2.7 V and 5.5 V. When oper-
ating from batteries, it continues to operate down to 1.75 V.
This makes the SSM2211 the best choice for unregulated
applications, such as toys and games. Featuring a 4 MHz
bandwidth and distortion below 0.2% THD + N @ 1 W,
superior performance is delivered at higher power or lower
speaker load impedance than competitive units.
shutdown mode, which typically reduces quiescent current
drain to 100 nA.
The SSM2211 is designed to operate over the –40°C to +85°C
temperature range. The SSM2211 is available in 8-lead SOIC
(narrow body) and LFCSP (lead frame chip scale) surface-
mount packages. The advanced mechanical packaging of the
LFCSP models ensures lower chip temperature and enhanced
performance relative to standard packaging options.
Applications include personal portable computers, hands-free
telephones and transceivers, talking toys, intercom systems, and
other low voltage audio systems requiring 1 W output power.
The low differential dc output voltage results in negligible
losses in the speaker winding and makes high value dc blocking
capacitors unnecessary. Battery life is extended by using
1 At RL = 4 Ω, TA = 25°C, THD + N < 1%, VS = 5 V, 4-layer PCB.
2 Bridge-tied load.
3 Protected by U.S. Patent No. 5,519,576.
Rev. D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registeredtrademarks arethe property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
Fax: 781.461.3113
www.analog.com
©2006 Analog Devices, Inc. All rights reserved.
SSM2211
TABLE OF CONTENTS
Features .............................................................................................. 1
Power Dissipation....................................................................... 16
Output Voltage Headroom........................................................ 17
Automatic Shutdown-Sensing Circuit..................................... 17
Shutdown-Circuit Design Example ......................................... 18
Start-Up Popping Noise............................................................. 18
SSM2211 Amplifier Design Example .................................. 18
Single-Ended Applications........................................................ 19
Driving Two Speakers Single Endedly..................................... 19
Evaluation Board........................................................................ 20
LFCSP Printed Circuit Board Layout Considerations .......... 20
Outline Dimensions....................................................................... 21
Ordering Guide .......................................................................... 21
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description......................................................................... 1
Revision History ............................................................................... 2
Electrical Characteristics................................................................. 3
Absolute Maximum Ratings............................................................ 5
Thermal Resistance ...................................................................... 5
ESD Caution.................................................................................. 5
Pin Configurations and Function Descriptions ........................... 6
Typical Performance Characteristics ............................................. 7
Product Overview........................................................................... 14
Thermal Performance—LFCSP................................................ 14
Typical Applications....................................................................... 15
Bridged Output vs. Single-Ended Output Configurations ... 15
Speaker Efficiency and Loudness............................................. 15
REVISION HISTORY
11/06—Rev. C to Rev. D
10/02—Data Sheet Changed from Rev. A to Rev. B
Updated Format..................................................................Universal
Changes to General Description .................................................... 1
Changes to Electrical Characteristics ............................................ 3
Changes to Absolute Maximum Ratings....................................... 5
Added Table 6.................................................................................... 6
Changes to Figure 32...................................................................... 11
Changes to the Product Overview Section ................................. 14
Changes to the Output Voltage Headroom Section................... 17
Changes to the Start-Up Popping Noise Section........................ 18
Changes to the Evaluation Board Section ................................... 20
Updated Outline Dimensions....................................................... 21
Changes to Ordering Guide .......................................................... 21
Deleted 8-Lead PDIP .........................................................Universal
Updated Outline Dimensions....................................................... 15
5/02—Data Sheet Changed from Rev. 0 to Rev. A
Edits to General Description ...........................................................1
Edits to Package Type .......................................................................3
Edits to Ordering Guide ...................................................................3
Edits to Product Overview...............................................................8
Edits to Printed Circuit Board Layout Considerations ............. 13
Added section Printed Circuit Board Layout
Considerations—LFCSP................................................................ 14
10/04—Data Sheet Changed from Rev. B to Rev. C
Updated Format..................................................................Universal
Changes to General Description .................................................... 1
Changes to Table 5............................................................................ 4
Deleted Thermal Performance—SOIC Section ........................... 8
Changes to Figure 31...................................................................... 10
Changes to Figure 40...................................................................... 12
Changes to Thermal Performance—LFCSP Section ................. 13
Deleted Figure 52, Renumbered Successive Figures.................. 14
Deleted Printed Circuit Board Layout—SOIC Section ............. 14
Changes to Output Voltage Headroom Section ......................... 16
Changes to Start-Up Popping Noise Section .............................. 17
Changes to Ordering Guide .......................................................... 20
Rev. D | Page 2 of 24
SSM2211
ELECTRICAL CHARACTERISTICS
VS = 5.0 V, TA = 25°C, RL = 8 Ω, CB = 0.1 μF, VCM = VD/2, unless otherwise noted.
Table 1.
Parameter
Symbol Conditions
Min Typ Max Unit
GENERAL CHARACTERISTICS
Differential Output Offset Voltage
Output Impedance
VOOS
ZOUT
AVD = 2, –40°C ≤ TA ≤ +85°C
4
0.1
50
mV
Ω
SHUTDOWN CONTROL
Input Voltage High
VIH
VIL
ISY = < 100 mA
ISY = normal
3.0
V
V
Input Voltage Low
1.3
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current
Supply Current, Shutdown Mode
DYNAMIC PERFORMANCE
Gain Bandwidth
PSRR
ISY
ISD
VS = 4.75 V to 5.25 V
VO1 = VO2 = 2.5 V, –40°C ≤ TA ≤ +85°C
Pin 1 = VDD (see Figure 32), –40°C < TA < +85°C
66
9.5
0.1
dB
mA
μA
20
1
GBP
ΦM
4
86
MHz
Degrees
Phase Margin
AUDIO PERFORMANCE
Total Harmonic Distortion
Total Harmonic Distortion
Voltage Noise Density
THD + N
THD + N
en
0.15
0.2
85
%
P = 0.5 W into 8 Ω, f = 1 kHz
P = 1.0 W into 8 Ω, f = 1 kHz
f = 1 kHz
%
nV√Hz
VS = 3.3 V, TA = 25°C, RL = 8 Ω, CB = 0.1 μF, VCM = VD/2, unless otherwise noted.
Table 2.
Parameter
Symbol Conditions
Min Typ Max Unit
GENERAL CHARACTERISTICS
Differential Output Offset Voltage
Output Impedance
VOOS
ZOUT
AVD = 2, –40°C ≤ TA ≤ +85°C
5
0.1
50
mV
Ω
SHUTDOWN CONTROL
Input Voltage High
VIH
VIL
ISY = < 100 μA
ISY = normal
1.7
V
V
Input Voltage Low
1
POWER SUPPLY
Supply Current
ISY
ISD
VO1 = VO2 = 1.65 V, –40°C ≤ TA ≤ +85°C
Pin 1 = VDD (see Figure 32), –40°C ≤ TA ≤ +85°C
5.2
0.1
20
1
mA
μA
Supply Current, Shutdown Mode
AUDIO PERFORMANCE
Total Harmonic Distortion
THD + N
0.1
%
P = 0.35 W into 8 Ω, f = 1 kHz
Rev. D | Page 3 of 24
SSM2211
VS = 2.7 V, TA = 25°C, RL = 8 Ω, CB = 0.1 μF, VCM = VS/2, unless otherwise noted.
Table 3.
Parameter
Symbol Conditions
Min Typ Max Unit
GENERAL CHARACTERISTICS
Differential Output Offset Voltage
Output Impedance
VOOS
ZOUT
AVD = 2
5
0.1
50
mV
Ω
SHUTDOWN CONTROL
Input Voltage High
VIH
VIL
ISY = < 100 mA
ISY = normal
1.5
V
V
Input Voltage Low
0.8
POWER SUPPLY
Supply Current
ISY
ISD
VO1 = VO2 = 1.35 V, –40°C ≤ TA ≤ +85°C
Pin 1 = VDD (see Figure 32), –40°C ≤ TA ≤ +85°C
4.2
0.1
20
1
mA
μA
Supply Current, Shutdown Mode
AUDIO PERFORMANCE
Total Harmonic Distortion
THD + N P = 0.25 W into 8 Ω, f = 1 kHz
0.1
%
Rev. D | Page 4 of 24
SSM2211
ABSOLUTE MAXIMUM RATINGS
Absolute maximum ratings apply at 25°C, unless otherwise noted.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 4.
Parameter
Rating
Supply Voltage
Input Voltage
6 V
VDD
VDD
2000 V
−65°C to +150°C
−40°C to +85°C
−65°C to +165°C
300°C
Table 5. Thermal Resistance
Package Type
8-Lead LFCSP_VD (CP-Suffix)1
8-Lead SOIC_N (S-Suffix)2
θJA
50
121
Unit
°C/W
°C/W
Common-Mode Input Voltage
ESD Susceptibility
Storage Temperature Range
Operating Temperature Range
Junction Temperature Range
Lead Temperature Range, Soldering (60 sec)
1 For the LFCSP_VD, θJA is measured with exposed lead frame soldered to the
printed circuit board.
2 For the SOIC_N, θJA is measured with the device soldered to a 4-layer printed
circuit board.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
Rev. D | Page 5 of 24
SSM2211
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
PIN 1
SHUTDOWN
BYPASS
IN+
1
2
3
4
INDICATOR
8
7
6
5
V
B
A
OUT
SHUTDOWN
BYPASS
IN+
1
2
3
4
8
7
6
5
V
B
OUT
V–
V+
SSM2211
V–
V+
SSM2211
TOP VIEW
(Not to Scale)
TOP VIEW
IN–
V
OUT
(Not to Scale)
IN–
V
OUT
A
Figure 2. 8-Lead SOIC_N Pin Configuration (R-8)
Figure 3. 8-Lead LFCSP_VD Pin Configuration (CP-8-2)
Table 6. Pin Function Descriptions
Pin No.
Mnemonic
Description
1
2
3
4
5
6
7
8
SHUTDOWN Shutdown Enable.
BYPASS
IN+
IN–
Bypass Capacitor.
Noninverting Input.
Inverting Input.
Output A.
VOUT
V+
A
B
Positive Supply.
Negative Supply.
Output B.
V–
VOUT
Rev. D | Page 6 of 24
SSM2211
TYPICAL PERFORMANCE CHARACTERISTICS
10
10
T
= 25°C
T
= 25°C
A
A
V
A
R
P
= 5V
= 2 (BTL)
= 8Ω
= 500mW
V
A
R
P
= 5V
DD
VD
L
DD
VD
= 8Ω
= 2 (BTL)
L
L
= 1W
L
C
= 0
B
1
1
C = 0
B
C
= 0.1μF
C
= 0.1μF
B
B
C
= 1μF
B
0.1
0.1
C
= 1μF
B
0.01
10
0.01
10
20
100
1k
FREQUENCY (Hz)
10k 20k
10k 20k
10k 20k
20
20
20
100
1k
FREQUENCY (Hz)
10k
20k
Figure 4. THD + N vs. Frequency
Figure 7. THD + N vs. Frequency
C
= 0
B
C
C
= 0
B
= 0.1μF
C
= 0.1μF
1
B
1
B
C
= 1μF
B
C
= 1μF
B
0.1
0.1
T
V
A
R
= 25°C
T
V
= 25°C
= 5V
A
A
DD
= 5V
DD
= 10 (BTL)
A
R
P
= 10 (BTL)
VD
= 8Ω
= 1W
VD
L
L
= 8Ω
L
L
P
= 500mW
100
0.01
10
0.01
10
100
1k
FREQUENCY (Hz)
10k 20k
20
1k
FREQUENCY (Hz)
Figure 8. THD + N vs. Frequency
Figure 5. THD + N vs. Frequency
C
= 0.1μF
B
C
= 0.1μF
B
1
1
C
= 1μF
B
C
= 1μF
B
0.1
0.1
T
V
= 25°C
T
= 25°C
= 5V
A
A
= 5V
V
A
R
P
DD
DD
VD
L
L
A
R
P
= 20 (BTL)
= 20 (BTL)
VD
= 8Ω
= 1W
= 8Ω
L
L
= 500mW
0.01
0.01
100
1k
FREQUENCY (Hz)
10k 20k
20
100
1k
FREQUENCY (Hz)
Figure 9. THD + N vs. Frequency
Figure 6. THD + N vs. Frequency
Rev. D | Page 7 of 24
SSM2211
10
10
T
V
A
R
= 25°C
A
T
V
A
R
P
= 25°C
A
= 5V
DD
VD
= 3.3V
DD
VD
= 8Ω
= 2 (BTL)
= 2 (BTL)
= 8Ω
L
L
L
FREQUENCY = 20Hz
= 350mW
C
= 0.1μF
B
C
= 0
B
1
1
C
= 0.1μF
B
0.1
0.1
C
= 1μF
B
0.01
0.01
10
20n
0.1
1
1
1
2
20
100
1k
FREQUENCY (Hz)
10k 20k
P
(W)
OUTPUT
Figure 10. THD + N vs. POUTPUT
Figure 13. THD + N vs. Frequency
10
T
= 25°C
A
C
= 0
V
A
R
= 5V
B
DD
VD
= 8Ω
= 2 (BTL)
L
FREQUENCY = 1kHz
C
= 0.1μF
B
C
= 0.1μF
1
0.1
0.01
10
1
B
C
= 1μF
B
0.1
T
V
= 25°C
DD
A
= 3.3V
A
R
P
= 10 (BTL)
= 8Ω
= 350mW
VD
L
L
0.01
20n
0.1
2
20
100
1k
FREQUENCY (Hz)
10k 20k
P
(W)
OUTPUT
Figure 11. THD + N vs. POUTPUT
Figure 14. THD + N vs. Frequency
10
T
V
A
R
= 25°C
A
= 5V
DD
= 2 (BTL)
= 8Ω
VD
L
FREQUENCY = 20kHz
= 0.1μF
C
B
C = 0.1μF
B
1
1
C
= 1μF
B
0.1
0.1
T
V
= 25°C
DD
A
= 3.3V
A
R
P
= 20 (BTL)
= 8Ω
= 350mW
100
VD
L
L
0.01
0.01
20n
0.1
2
20
1k
FREQUENCY (Hz)
10k 20k
P
(W)
OUTPUT
Figure 12. THD + N vs. POUTPUT
Figure 15. THD + N vs. Frequency
Rev. D | Page 8 of 24
SSM2211
10
10
T
V
A
R
= 25°C
A
T
V
A
R
P
= 25°C
A
= 3.3V
DD
VD
= 2.7V
DD
VD
= 8Ω
= 2 (BTL)
= 2 (BTL)
= 8Ω
L
L
L
FREQUENCY = 20Hz
= 0.1μF
= 250mW
C
B
C
= 0
B
1
1
C
= 0.1μF
B
0.1
0.01
0.1
C
= 1μF
B
0.01
10
20n
0.1
1
1
1
2
20
100
1k
FREQUENCY (Hz)
10k 20k
P
(W)
OUTPUT
Figure 16. THD + N vs. POUTPUT
Figure 19. THD + N vs. Frequency
10
T
V
A
R
= 25°C
A
= 3.3V
DD
VD
= 8Ω
C
= 0
= 2 (BTL)
B
L
FREQUENCY = 1kHz
= 0.1μF
C
B
C
= 0.1μF
B
1
1
0.1
0.01
10
C
= 1μF
B
0.1
0.01
T
V
A
R
P
= 25°C
DD
VD
= 8Ω
= 250mW
A
= 2.7V
= 10 (BTL)
L
L
20n
0.1
2
20
100
1k
10k 20k
P
(W)
OUTPUT
FREQUENCY (Hz)
Figure 17. THD + N vs. POUTPUT
Figure 20. THD + N vs. Frequency
10
T
V
A
R
= 25°C
A
= 3.3V
= 2 (BTL)
= 8Ω
DD
VD
L
FREQUENCY = 20kHz
= 0.1μF
C
= 0.1μF
B
C
B
1
1
C
= 1μF
B
0.1
0.1
0.01
T
V
A
R
P
= 25°C
A
= 2.7V
= 20 (BTL)
= 8Ω
DD
VD
L
L
= 250mW
100
0.01
20n
0.1
2
20
1k
FREQUENCY (Hz)
10k 20k
P
(W)
OUTPUT
Figure 18. THD + N vs. POUTPUT
Figure 21. THD + N vs. Frequency
Rev. D | Page 9 of 24
SSM2211
10
10
T
V
A
R
= 25°C
T
= 25°C
A
A
= 2.7V
V
A
C
C
= 5V
DD
VD
DD
VD
= 0.1μF
= 2 (BTL)
= 10 SINGLE ENDED
= 8Ω
L
B
C
FREQUENCY = 20Hz
= 1000μF
1
1
R
= 8Ω
= 250mW
L
P
O
0.1
0.1
0.01
R
= 32Ω
= 60mW
L
P
O
0.01
20n
0.1
1
2
20
100
1k
FREQUENCY (Hz)
10k 20k
P
(W)
OUTPUT
Figure 22. THD + N vs. POUTPUT
Figure 25. THD + N vs. Frequency
10
10
T
V
A
R
= 25°C
A
T
V
= 25°C
DD
A
= 2.7V
DD
VD
= 3.3V
= 2 (BTL)
A
C
C
= 10 SINGLE ENDED
= 0.1μF
= 1000μF
VD
B
C
= 8Ω
L
FREQUENCY = 1kHz
1
1
R
= 8Ω
= 85mW
L
P
O
0.1
0.01
0.1
R
= 32Ω
L
P
= 20mW
O
0.01
10
20n
0.1
1
2
20
100
1k
FREQUENCY (Hz)
10k 20k
P
(W)
OUTPUT
Figure 23. THD + N vs. POUTPUT
Figure 26. THD + N vs. Frequency
10
T
= 25°C
T
= 25°C
= 2.7V
= 10 SINGLE ENDED
= 0.1μF
= 1000μF
A
A
V
A
R
= 2.7V
V
A
C
C
DD
DD
VD
B
C
= 2 (BTL)
VD
= 8Ω
L
FREQUENCY = 20kHz
1
1
R
= 8Ω
= 65mW
L
P
O
0.1
0.1
R
= 32Ω
= 15mW
L
P
O
0.01
0.01
20n
0.1
1
2
20
100
1k
FREQUENCY (Hz)
10k 20k
P
(W)
OUTPUT
Figure 24. THD + N vs. POUTPUT
Figure 27. THD + N vs. Frequency
Rev. D | Page 10 of 24
SSM2211
10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
T
A
R
= 25°C
VD
= 8Ω
A
V
= 2.7V
DD
T
= 150°C
= 2 (BTL)
J,MAX
FREE AIR, NO HEAT SINK
L
FREQUENCY = 20Hz
C = 0.1μF
SOIC θ = 121°C/W
JA
LFCSP θ = 50°C/W
B
JA
1
8-LEAD LFCSP
V
= 5V
DD
V
DD
= 3.3V
0.1
8-LEAD SOIC
0.01
20n
0.1
1
2
–40 –30 –20 –10
0
10 20 30 40 50 60 70 80 90 100 110 120
P
(W)
OUTPUT
AMBIENT TEMPERATURE (°C)
Figure 28. THD + N vs. POUTPUT
Figure 31. Maximum Power Dissipation vs. Ambient Temperature
10
10k
T
A
R
= 25°C
VD
= 8Ω
A
V
= 2.7V
T
V
= 25°C
= 5V
DD
A
= 2 (BTL)
DD
L
FREQUENCY = 1kHz
C
= 0.1μF
8k
6k
4k
2k
0
B
1
0.1
V
= 5V
DD
V
= 3.3V
DD
0.01
20n
0.1
1
2
0
1
2
3
4
5
P
(W)
OUTPUT
SHUTDOWN VOLTAGE AT PIN 1 (V)
Figure 29. THD + N vs. POUTPUT
Figure 32. Supply Current vs. Shutdown Voltage at Pin 1
10
14
12
10
8
T
A
R
= 25°C
VD
= 8Ω
A
= 2 (BTL)
V
= 3.3V
DD
T
R
= 25°C
= OPEN
A
L
L
FREQUENCY = 20kHz
= 0.1μF
C
B
1
V
= 2.7V
DD
6
0.1
4
2
0
V
= 5V
DD
1
0.01
20n
0.1
2
0
1
2
3
4
5
6
P
(W)
OUTPUT
SUPPLY VOLTAGE (V)
Figure 30. THD + N vs. POUTPUT
Figure 33. Supply Current vs. Supply Voltage
Rev. D | Page 11 of 24
SSM2211
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
25
20
V
= 2.7V
DD
SAMPLE SIZE = 300
15
10
5
5V
44
3.3V
2.7V
24
0
–20
4
8
12
16
20
28
32
36
40
48
–15
–10
–5
0
5
10
15
20
25
OUTPUT OFFSET VOLTAGE (mV)
LOAD RESISTANCE (Ω)
Figure 36. Output Offset Voltage Distribution
Figure 34. POUTPUT vs. Load Resistance
80
60
40
20
180
135
20
16
12
8
V
= 3.3V
DD
SAMPLE SIZE = 300
90
45
0
0
–20
–40
–45
–90
–135
–180
4
–60
–80
0
100
1k
10k
100k
1M
10M
100M
–30
–20
–10
0
10
20
30
FREQUENCY (Hz)
OUTPUT OFFSET VOLTAGE (mV)
Figure 35. Gain and Phase Shift vs. Frequency (Single Amplifier)
Figure 37. Output Offset Voltage Distribution
Rev. D | Page 12 of 24
SSM2211
20
16
12
8
–50
–55
= 5V
T
V
C
A
= 25°C
DD
= 15μF
V
DD
A
= 5V ± 100mV
SAMPLE SIZE = 300
B
= 2
VD
–60
–65
–70
4
0
–30
–20
–10
0
10
20
30
20
100
1k
10k
30k
OUTPUT OFFSET VOLTAGE (mV)
FREQUENCY (Hz)
Figure 38. Output Offset Voltage Distribution
Figure 40. PSRR vs. Frequency
600
500
V
= 5V
DD
SAMPLE SIZE = 1,700
400
300
200
100
0
6
7
8
9
10
11
12
13
14
15
SUPPLY CURRENT (mA)
Figure 39. Supply Current Distribution
Rev. D | Page 13 of 24
SSM2211
PRODUCT OVERVIEW
The SSM2211 is a low distortion speaker amplifier that can run
from a 2.7 V to 5.5 V supply. It consists of a rail-to-rail input
and a differential output that can be driven within 400 mV of
either supply rail while supplying a sustained output current of
350 mA. The SSM2211 is unity-gain stable, requiring no
external compensation capacitors, and can be configured for
gains of up to 40 dB. Figure 41 shows the simplified schematic.
Pin 4 and Pin 3 are the inverting and noninverting terminals
to A1. An offset voltage is provided at Pin 2, which should be
connected to Pin 3 for use in single-supply applications. The
output of A1 appears at Pin 5. A second operational amplifier,
A2, is configured with a fixed gain of AV = −1 and produces an
inverted replica of Pin 5 at Pin 8. The SSM2211 outputs at Pin 5
and Pin 8 produce a bridged configuration output to which a
speaker can be connected. This bridge configuration offers the
advantage of a more efficient power transfer from the input to
the speaker. Because both outputs are symmetric, the dc bias at
Pin 5 and Pin 8 are exactly equal, resulting in zero dc differ-
ential voltage across the outputs. This eliminates the need for a
coupling capacitor at the output.
20kΩ
V
DD
6
SSM2211
20kΩ
4
3
V
IN
5
8
V
V
A1
O1
THERMAL PERFORMANCE—LFCSP
50kΩ
50kΩ
The addition of the LFCSP to the Analog Devices, Inc., package
portfolio offers the SSM2211 user even greater choice when
considering thermal performance criteria. For the 8-lead,
3 mm × 3 mm LFCSP, the θJA is 50°C/W. This is a significant
performance improvement over most other packaging options.
50kΩ
A2
O2
2
BIAS
CONTROL
50kΩ
0.1μF
7
1
SHUTDOWN
Figure 41. Simplified Schematic
Rev. D | Page 14 of 24
SSM2211
TYPICAL APPLICATIONS
R
F
the power delivered to the load. In a typical application
5V
operating from a 5 V supply, the maximum power that can be
delivered by the SSM2211 to an 8 Ω speaker in a single-ended
configuration is 250 mW. By driving this speaker with a bridged
output, 1 W of power can be delivered. This translates to a
12 dB increase in sound pressure level from the speaker.
C
S
6
C
C
R
I
4
3
AUDIO
INPUT
–
–
+
5
SPEAKER
8V
SSM2211
8
Driving a speaker differentially from a bridged output offers
another advantage in that it eliminates the need for an output
coupling capacitor to the load. In a single-supply application,
the quiescent voltage at the output is half of the supply voltage.
If a speaker is connected in a single-ended configuration, a
coupling capacitor is needed to prevent dc current from flowing
through the speaker. This capacitor also needs to be large
enough to prevent low frequency roll-off. The corner frequency
is given by
+
1
7
2
C
B
Figure 42. Typical Configuration
Figure 42 shows how the SSM2211 is connected in a typical
application. The SSM2211 can be configured for gain much like
a standard operational amplifier. The gain from the audio input
to the speaker is
1
f−3dB
=
(4)
2πRL × CC
RF
A = 2 ×
(1)
V
RI
where RL is the speaker resistance and CC is the coupling
capacitance.
The 2× factor comes from the fact that Pin 8 has the opposite
polarity of Pin 5, providing twice the voltage swing to the
speaker from the bridged-output configuration.
For an 8 Ω speaker and a corner frequency of 20 Hz, a 1000 μF
capacitor would be needed, which is physically large and costly.
By connecting a speaker in a bridged-output configuration, the
quiescent differential voltage across the speaker becomes nearly
zero, eliminating the need for the coupling capacitor.
CS is a supply bypass capacitor used to provide power supply
filtering. Pin 2 is connected to Pin 3 to provide an offset voltage
for single-supply use, with CB providing a low ac impedance to
ground to help power supply rejection. Because Pin 4 is a
virtual ac ground, the input impedance is equal to RI. CC is the
input coupling capacitor, which also creates a high-pass filter
with a corner frequency of
SPEAKER EFFICIENCY AND LOUDNESS
The effective loudness of 1 W of power delivered into an 8 Ω
speaker is a function of speaker efficiency. The efficiency is
typically rated as the sound pressure level (SPL) at 1 meter in
front of the speaker with 1 W of power applied to the speaker.
Most speakers are between 85 dB and 95 dB SPL at 1 meter at
1 W. Table 7 shows a comparison of the relative loudness of
different sounds.
1
fHP
=
(2)
2πRI × CC
Because the SSM2211 has an excellent phase margin, a feedback
capacitor in parallel with RF to band limit the amplifier is not
required, as it is in some competitor products.
Table 7. Typical Sound Pressure Levels
Source of Sound
dB SPL
120
95
80
65
50
30
0
BRIDGED OUTPUT VS. SINGLE-ENDED OUTPUT
CONFIGURATIONS
Threshold of Pain
Heavy Street Traffic
Cabin of Jet Aircraft
Average Conversation
Average Home at Night
Quiet Recording Studio
Threshold of Hearing
The power delivered to a load with a sinusoidal signal can be
expressed in terms of the peak voltage of the signal and the
resistance of the load as
2
VPK
PL =
(3)
2×RL
It can easily be seen that 1 W of power into a speaker can
produce quite a bit of acoustic energy.
By driving a load from a bridged-output configuration, the
voltage swing across the load doubles. Therefore, an advantage
in using a bridged-output configuration becomes apparent from
Equation 3, as doubling the peak voltage results in four times
Rev. D | Page 15 of 24
SSM2211
The power dissipated by the amplifier internally is simply the
difference between Equation 6 and Equation 3. The equation
for internal power dissipated, PDISS, expressed in terms of power
delivered to the load and load resistance, is
POWER DISSIPATION
Another important advantage in using a bridged-output config-
uration is the fact that bridged-output amplifiers are more
efficient than single-ended amplifiers in delivering power to a
load. Efficiency is defined as the ratio of power from the power
supply to power delivered to the load
2 2VDD ×VPEAK
PDISS
=
(7)
πRL
P
L
η =
The graph of this equation is shown in Figure 44.
P
SY
1.5
V
= 5V
DD
An amplifier with a higher efficiency has less internal power
dissipation, which results in a lower die-to-case junction tem-
perature as compared to an amplifier that is less efficient. This is
important when considering the amplifier maximum power
dissipation rating vs. ambient temperature. An internal power
dissipation vs. output power equation can be derived to fully
understand this.
R
= 4Ω
L
1.0
0.5
0
R
= 8Ω
L
The internal power dissipation of the amplifier is the internal
voltage drop multiplied by the average value of the supply
current. An easier way to find internal power dissipation is to
measure the difference between the power delivered by the
supply voltage source and the power delivered into the load.
The waveform of the supply current for a bridged-output
amplifier is shown in Figure 43.
R
= 16Ω
L
0
0.5
1.0
1.5
OUTPUT POWER (W)
Figure 44. Power Dissipation vs. Output Power with VDD = 5 V
Because the efficiency of a bridged-output amplifier (Equation 3
divided by Equation 6) increases with the square root of PL, the
power dissipated internally by the device stays relatively flat and
actually decreases with higher output power. The maximum
power dissipation of the device can be found by differentiating
Equation 7 with respect to load power and setting the derivative
equal to zero. This yields
V
OUT
V
PEAK
TIME
T
I
SY
2 ×VDD
πRL
∂PDISS
∂PL
−1
I
DD, PEAK
2
=
× PL −1=0
(8)
I
DD, AVG
and occurs when
2VDD
T
TIME
2
PDISS,MAX
=
(9)
Figure 43. Bridged Amplifier Output Voltage and Supply Current vs. Time
π2 RL
By integrating the supply current over a period, T, then dividing
the result by T, IDD,AVG can be found. Expressed in terms of peak
output voltage and load resistance
Using Equation 9 and the power derating curve in Figure 31,
the maximum ambient temperature can be found easily. This
ensures that the SSM2211 does not exceed its maximum
junction temperature of 150°C. The power dissipation for a
2VPEAK
IDD,AVG
=
(5)
single-ended output application where the load is capacitively
πRL
coupled is given by
Therefore, power delivered by the supply, neglecting the bias
current for the device, is
2 2 ×VDD
∂PDISS
=
×
P L − PL
(10)
2 VDD ×VPEAK
π RL
The graph of Equation 10 is shown in Figure 45.
PSY
=
(6)
πRL
Rev. D | Page 16 of 24
SSM2211
0.35
0.30
1.6
1.4
V
= 5V
DD
R
= 4Ω
L
1.2
1.0
0.8
0.6
0.4
0.2
0
0.25
0.20
0.15
RL = 4Ω
RL = 8Ω
R
= 8Ω
L
RL = 16Ω
0.10
0.05
0
R
= 16Ω
L
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0.1
0.2
0.3
0.4
OUTPUT POWER (W)
SUPPLY VOLTAGE (V)
Figure 45. Power Dissipation vs. Single-Ended Output Power
with VDD = 5 V
Figure 46. Maximum Output Power vs. VSY
Shutdown Feature
The maximum power dissipation for a single-ended output is
The SSM2211 can be put into a low power consumption shut-
down mode by connecting Pin 1 to 5 V. In shutdown mode,
the SSM2211 has an extremely low supply current of less than
10 nA. This makes the SSM2211 ideal for battery-powered
applications.
2
VDD
PDISS,MAX
=
(11)
2 π2RL
OUTPUT VOLTAGE HEADROOM
Connect Pin 1 to ground for normal operation. Connecting Pin 1
to VDD mutes the outputs and puts the device into shutdown
mode. A pull-up or pull-down resistor is not required. Pin 1
should always be connected to a fixed potential, either VDD or
ground, and never be left floating. Leaving Pin 1 unconnected
can produce unpredictable results.
The outputs of both amplifiers in the SSM2211 can come to
within 400 mV of either supply rail while driving an 8 Ω load.
As compared to equivalent competitor products, the SSM2211
has a higher output voltage headroom. This means that the
SSM2211 can deliver an equivalent maximum output power
while running from a lower supply voltage. By running at a
lower supply voltage, the internal power dissipation of the
device is reduced, as can be seen in Equation 9. This extended
output headroom, along with the LFCSP package, allows the
SSM2211 to operate in higher ambient temperatures than
competitor devices.
AUTOMATIC SHUTDOWN-SENSING CIRCUIT
Figure 47 shows a circuit that can be used to take the SSM2211
in and out of shutdown mode automatically. This circuit can
be set to turn the SSM2211 on when an input signal of a certain
amplitude is detected. The circuit also puts the device into low
power shutdown mode if an input signal is not sensed within
a certain amount of time. This can be useful in a variety of
portable radio applications, where power conservation is critical.
The SSM2211 is also capable of providing amplification even at
supply voltages as low as 2.7 V. The maximum power available at
the output is a function of the supply voltage. Therefore, as the
supply voltage decreases, so does the maximum power output
from the device. The maximum output power vs. supply voltage
at various bridge-tied load resistances is shown in Figure 46. The
maximum output power is defined as the point at which the
output has 1% total harmonic distortion (THD + N).
R8
V
DD
R7
R5
4
1
5
8
C2
DD
V
DD
V
SSM2211
IN
To find the minimum supply voltage needed to achieve a
specified maximum undistorted output power use Figure 46.
R6
R4
A1
–
V
OP181
For example, an application requires only 500 mW to be
output for an 8 Ω speaker. With the speaker connected in a
bridged-output configuration, the minimum supply voltage
required is 3.3 V.
A2
+
D1
C1
R1
R3
R2
NOTE
ADDITIONAL PINS OMITTED FOR CLARITY
Figure 47. Automatic Shutdown Circuit
Rev. D | Page 17 of 24
SSM2211
The input signal to the SSM2211 is also connected to the non-
inverting terminal of A2. R1, R2, and R3 set the threshold
voltage at which the SSM2211 is to be taken out of shutdown
mode. D1 half-wave rectifies the output of A2, discharging C1
to ground when an input signal greater than the set threshold
voltage is detected. R4 controls the charge time of C1, which
sets the time until the SSM2211 is put back into shutdown
mode after the input signal is no longer detected.
SHUTDOWN-CIRCUIT DESIGN EXAMPLE
In this example, a portable radio application requires the
SSM2211 to be turned on when an input signal greater than
50 mV is detected. The device needs to return to shutdown mode
within 500 ms after the input signal is no longer detected. The
lowest frequency of interest is 200 Hz, and a 5 V supply is used.
The minimum gain of the shutdown circuit, from Equation 12,
is AV = 100. R1 is set to 100 kΩ. Using Equation 13 and
Equation 14, R2 = 98 kΩ and R3 = 4.9 MΩ. C1 is set to 0.01 μF,
and based on Equation 15, R4 is set to 10 MΩ . To minimize
power supply current, R5 and R6 are set to 10 MΩ. The
previous procedure provides an adequate starting point for the
shutdown circuit. Some component values may need to be
adjusted empirically to optimize performance.
R5 and R6 are used to establish a voltage reference point equal
to half of the supply voltage. R7 and R8 set the gain of the
SSM2211. A 1N914 or equivalent diode is required for D1, and
A2 must be a rail-to-rail output amplifier, such as OP181 or
equivalent. This ensures that C1 discharges sufficiently to bring
the SSM2211 out of shutdown mode.
To find the appropriate component values, first, the gain of A2
must be determined by
START-UP POPPING NOISE
During power-up or release from shutdown mode, the midrail
bypass capacitor, CB, determines the rate at which the SSM2211
starts up. By adjusting the charging time constant of CB, the
start-up pop noise can be pushed into the subaudible range,
greatly reducing start-up popping noise. On power-up, the
midrail bypass capacitor is charged through an effective
resistance of 25 kΩ. To minimize start-up popping, the charging
time constant for CB needs to be greater than the charging time
constant for the input coupling capacitor, CC.
VSY
VTHS
AV,MIN
=
(12)
where:
VSY is the single supply voltage.
THS is the threshold voltage.
V
AV must be set to a minimum of 2 for the circuit to work
properly.
Next, choose R1 and set R2 to
CB × 25 kΩ > CC × R1
(16)
⎛
⎜
⎝
⎞
⎟
⎟
⎠
2
AV
For an application where R1 = 10 kΩ and CC = 0.22 μF, CB must
be at least 0.1 μF to minimize start-up popping noise.
⎜
R2 = R1 1−
(13)
(14)
SSM2211 Amplifier Design Example
Find R3 as
Maximum Output Power
Input Impedance
Load Impedance
Input Level
1 W
20 kΩ
8 Ω
1 V rms
R1×R2
R2 + R2
(
)
R3 =
AV −1
C1 can be arbitrarily set but should be small enough to prevent
A2 from becoming capacitively overloaded. R4 and C1 control
the shutdown rate. To prevent intermittent shutdown with low
frequency input signals, the minimum time constant must be
Bandwidth
20 Hz − 20 kHz 0.25 dB
The configuration shown in Figure 42 is used. The first thing to
determine is the minimum supply rail necessary to obtain the
specified maximum output power. From Figure 46, for 1 W of
output power into an 8 Ω load, the supply voltage must be at
least 4.6 V. A supply rail of 5 V can be easily obtained from a
10
R4×C1 ≥
(15)
fLOW
where fLOW is the lowest input frequency expected.
Rev. D | Page 18 of 24
SSM2211
voltage reference. The extra supply voltage also allows the
SSM2211 to reproduce peaks in excess of 1 W without clipping
the signal. With VDD = 5 V and RL = 8 Ω, Equation 9 shows that
the maximum power dissipation for the SSM2211 is 633 mW.
From the power derating curve in Figure 31, the ambient
temperature must be less than 73°C for the SOIC and 118°C for
the LFCSP.
SINGLE-ENDED APPLICATIONS
There are applications in which driving a speaker differentially is
not practical, for example, a pair of stereo speakers where the
minus terminal of both speakers is connected to ground. Figure 48
shows how this can be accomplished.
10kΩ
5V
The required gain of the amplifier can be determined from
Equation 17 as
6
10kΩ
0.47μF
AUDIO
INPUT
4
3
PL × RL
–
5
8
(17)
AV =
= 2.8
SSM2211
VIN,rms
+
1
From Equation 1
7
470μF
+
–
2
250mW
SPEAKER
(8Ω)
RF AV
=
0.1μF
RI
2
or RF = 1.4 × RI. Because the desired input impedance is 20 kΩ,
RI = 20 kΩ and R2 = 28 kΩ.
Figure 48. Single-Ended Output Application
It is not necessary to connect a dummy load to the unused
output to help stabilize the output. The 470 μF coupling
capacitor creates a high-pass frequency cutoff of 42 Hz, as given
in Equation 4, which is acceptable for most computer speaker
applications. The overall gain for a single-ended output
configuration is AV = RF/R1, which for this example is equal to 1.
The final design step is to select the input capacitor. When
adding an input capacitor, CC, to create a high-pass filter, the
corner frequency needs to be far enough away for the design to
meet the bandwidth criteria. For a first-order filter to achieve a
pass-band response within 0.25 dB, the corner frequency must
be at least 4.14× away from the pass-band frequency. So, (4.14 ×
fHP) < 20 Hz. Using Equation 2, the minimum size of input
capacitor can be found.
DRIVING TWO SPEAKERS SINGLE ENDEDLY
It is possible to drive two speakers single endedly with both
outputs of the SSM2211.
1
CC >
(18)
20kΩ
20 Hz
⎛
⎞
2π × 20 kꢀ ⎜
⎟
⎟
⎜
5V
4.14
⎝
⎠
–
470μF
LEFT
Therefore, CC > 1.65 μF. Using a 2.2 μF is a practical choice for CC.
SPEAKER
6
(8Ω)
+
20kΩ
4
3
AUDIO
INPUT
The gain bandwidth product for each internal amplifier in the
SSM2211 is 4 MHz. Because 4 MHz is much greater than
4.14 × 20 kHz, the design meets the upper frequency bandwidth
criteria. The SSM2211 can also be configured for higher
differential gains without running into bandwidth limitations.
Equation 16 shows an appropriate value for CB to reduce start-
up popping noise.
–
5
8
1μF
SSM2211
+
1
7
470μF
+
–
2
RIGHT
SPEAKER
(8Ω)
0.1μF
Figure 49. SSM2211 Used as a Dual-Speaker Amplifier
2.2ꢁF20 kꢀ
CB >
=1.76ꢁF
(19)
Each speaker is driven by a single-ended output. The trade-off
is that only 250 mW of sustained power can be put into each
speaker. Also, a coupling capacitor must be connected in series
with each of the speakers to prevent large dc currents from
flowing through the 8 Ω speakers. These coupling capacitors
produce a high-pass filter with a corner frequency given by
Equation 4. For a speaker load of 8 Ω and a coupling capacitor
of 470 μF, this results in a −3 dB frequency of 42 Hz.
25 kꢀ
Selecting CB to be 2.2 μF for a practical value of capacitor
minimizes start-up popping noise.
To summarize the final design:
VDD
R1
RF
CC
CB
5 V
20 kΩ
28 kΩ
2.2 μF
2.2 μF
Because the power of a single-ended output is one-quarter that
of a bridged output, both speakers together are still half as loud
(−6 dB SPL) as a single speaker driven with a bridged output.
TA, MAX 85°C
Rev. D | Page 19 of 24
SSM2211
The polarity of the speakers is important, as each output is 180
degrees out of phase with the other. By connecting the minus
terminal of Speaker 1 to Pin 5, and the plus terminal of
Speaker 2 to Pin 8, proper speaker phase can be established.
Therefore, for PO = 1 W and RL = 8 Ω, V = 2.8 V rms, or
8 V pp. If the available input signal is 1.4 V rms or more, use
the board as is, with RF = RI = 20 kΩ. If more gain is needed,
increase the value of RF.
The maximum power dissipation of the device, assuming both
loads are equal, can be found by doubling Equation 11. If the
loads are different, use Equation 11 to find the power dissipa-
tion caused by each load, then take the sum to find the total
power dissipated by the SSM2211.
When you have determined the closed-loop gain required by
your source level, and can develop 1 W across the 8 Ω load
resistor with the normal input signal level, replace the resistor
with your speaker. Your speaker can be connected across the
VO1 and VO2 posts for bridged-mode operation only after the
8 Ω load resistor is removed. For no phase inversion, VO2 must
be connected to the (+) terminal of the speaker.
EVALUATION BOARD
An evaluation board for the SSM2211 is available. For more
information, call 1-800-ANALOGD.
V
O2
CH A
5
V+
R1
51kΩ
GND
2.5V
COMMON
MODE
SSM2211
8Ω
1W
+
PROBES
C1
0.1µF
C2
10µF
SHUTDOWN
ON
8
CH B
V
O2
CH B DISPLAY
6
J1
INV. ON A+B
V
O1
8
1
2
3
4
OSCILLOSCOPE
AUDIO
INPUT
R
SSM2211
L
1W 8Ω
Figure 51. Using an Oscilloscope to Display the Bridged-Output Voltage
+
To use the SSM2211 in a single-ended-output configuration,
replace J1 and J2 jumpers with electrolytic capacitors of a
suitable value, with the negative terminals to the output
terminals VO1 and VO2. The single-ended loads can then be
returned to ground. Note that the maximum output power is
reduced to 250 mW (one-quarter of the rated maximum), due
to the maximum swing in the nonbridged mode being one-half
and power being proportional to the square of the voltage. For
frequency response down 3 dB at 100 Hz, a 200 μF capacitor is
required with 8 Ω speakers.
5
J2
VOLUME
20kΩ POT.
R
20kΩ
C
I
IN
1µF
7
V
O1
CW
R
F
20kΩ
C1
0.1µF
Figure 50. Evaluation Board Schematic
The voltage gain of the SSM2211 is given by Equation 20.
RF
AV =2×
RI
(20)
The SSM2211 evaluation board also comes with a shutdown
switch, which allows the user to switch between on (normal
operation) and the power-conserving shutdown mode.
If desired, the input signal may be attenuated by turning the
10 kΩ potentiometer in the CW (clockwise) direction. CIN
isolates the input common-mode voltage (VD/2) present at Pin 2
and Pin 3. With V+ = 5 V, there is 2.5 V common-mode voltage
present at both output terminals, VO1 and VO2, as well.
LFCSP PRINTED CIRCUIT BOARD LAYOUT
CONSIDERATIONS
The LFCSP is a plastic encapsulated package with a copper lead
frame substrate. This is a leadless package with solder lands on
the bottom surface of the package, instead of conventional
formed perimeter leads. A key feature that allows the user to
reach the quoted θJA performance is the exposed die attach
paddle (DAP) on the bottom surface of the package. When
soldered to the PCB, the DAP can provide efficient conduction
of heat from the die to the PCB. In order to achieve optimum
package performance, consideration should be given to the PCB
pad design for both the solder lands and the DAP. For further
information the user is directed to the Amkor Technology
document, “Application Notes for Surface Mount Assembly of
Amkor’s MicroLead Frame (MLF) Packages.” This can be
downloaded from the Amkor Technology website,
CAUTION: The ground lead of the oscilloscope probe, or any
other instrument used to measure the output signal, must not
be connected to either output, as this shorts out one of the
amplifier outputs and can possibly damage the device.
A safe method of displaying the differential output signal using a
grounded scope is shown in Figure 51. Connect Channel A probe
to the VO2 terminal post. Connect Channel B probe to the VO1
post. Invert Channel B, and add the two channels together. Most
multichannel oscilloscopes have this feature built in. If you must
connect the ground lead of the test instrument to either output
signal pins, a power-line isolation transformer must be used to
isolate the instrument ground from the power supply ground.
Recall that
www.amkor.com, as a product application note.
V = P × R
Rev. D | Page 20 of 24
SSM2211
OUTLINE DIMENSIONS
5.00 (0.1968)
4.80 (0.1890)
8
1
5
4
6.20 (0.2440)
5.80 (0.2284)
4.00 (0.1574)
3.80 (0.1497)
0.50 (0.0196)
0.25 (0.0099)
1.27 (0.0500)
BSC
45°
1.75 (0.0688)
1.35 (0.0532)
0.25 (0.0098)
0.10 (0.0040)
8°
0°
0.51 (0.0201)
0.31 (0.0122)
COPLANARITY
0.10
1.27 (0.0500)
0.40 (0.0157)
0.25 (0.0098)
0.17 (0.0067)
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MS-012-AA
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
Figure 52. 8-Lead Standard Small Outline Package [SOIC_N]
Narrow Body, S-Suffix
(R-8)
Dimensions shown in millimeters and (inches)
0.50
0.40
0.30
3.00
BSC SQ
0.60 MAX
8
PIN 1
INDICATOR
1
PIN 1
INDICATOR
1.89
1.74
1.59
2.75
BSC SQ
TOP
VIEW
1.50
REF
0.50
BSC
4
5
1.60
1.45
1.30
0.70 MAX
0.65TYP
12° MAX
0.90 MAX
0.85 NOM
0.05 MAX
0.01 NOM
SEATING
PLANE
0.30
0.23
0.18
0.20 REF
Figure 53. 8-Lead Lead Frame Chip Scale Package [LFCSP_VD]
3 mm × 3 mm Body, Very Thin, Dual Lead
(CP-8-2)
Dimensions shown in millimeters
ORDERING GUIDE
Model
Temperature Range
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
Package Description
8-Lead LFCSP_VD
8-Lead LFCSP_VD
8-Lead LFCSP_VD
8-Lead LFCSP_VD
8-Lead LFCSP_VD
8-Lead LFCSP_VD
8-Lead SOIC_N
8-Lead SOIC_N
8-Lead SOIC_N
8-Lead SOIC_N
8-Lead SOIC_N
Package Option
CP-8-2
CP-8-2
CP-8-2
CP-8-2
Branding
B5A
B5A
SSM2211CP-R2
SSM2211CP-REEL
SSM2211CP-REEL7
SSM2211CPZ-R21
SSM2211CPZ-REEL1
SSM2211CPZ-REEL71
SSM2211S
SSM2211S-REEL
SSM2211S-REEL7
SSM2211SZ1
B5A
B5A#
B5A#
B5A#
CP-8-2
CP-8-2
R-8 (S-Suffix)
R-8 (S-Suffix)
R-8 (S-Suffix)
R-8 (S-Suffix)
R-8 (S-Suffix)
R-8 (S-Suffix)
SSM2211SZ-REEL1
SSM2211SZ-REEL71
SSM2211-EVAL
8-Lead SOIC_N
Evaluation Board
1 Z = Pb-free part; # denotes lead-free product may be top or bottom marked.
Rev. D | Page 21 of 24
SSM2211
NOTES
Rev. D | Page 22 of 24
SSM2211
NOTES
Rev. D | Page 23 of 24
SSM2211
NOTES
©2006 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
C00358-0-11/06(D)
Rev. D | Page 24 of 24
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