APL501J [ADPOW]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS; N沟道增强型高压功率MOSFET
| 型号： | APL501J |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| 文件： | 总4页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S
D
S
S
D
G
G
SOT-227
APL501J
500V 43.0A 0.12W
ISOTOP®
"UL Recognized" File No. E145592 (S)
POWER MOS IV®
SINGLE DIE ISOTOP® PACKAGE
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Symbol Parameter
APL501J
500
UNIT
VDSS
Volts
Drain-Source Voltage
ID
43
Continuous Drain Current @ TC = 25°C
Amps
1
IDM, lLM
VGS
172
Pulsed Drain Current
and Inductive Current Clamped
Gate-Source Voltage
±30
Volts
Watts
W/°C
520
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
PD
4.16
TJ,TSTG
TL
-55 to 150
300
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
MIN
500
43
TYP
MAX
UNIT
Volts
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 8V)
Amps
Ohms
ID(ON)
RDS(ON) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID [Cont.])
0.12
25
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
µA
250
±100
4
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
IGSS
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
nA
VGS(TH)
2
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
Volts
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
UNIT
RQJC
RQCS
Junction to Case
0.24
°C/W
Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
0.06
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
EUROPE
APL501J
UNIT
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
TYP
6040
1220
510
13
MAX
7300
1710
770
26
Ciss
Coss
Crss
td(on)
tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
VGS = 0V
VDS = 25V
f = 1 MHz
pF
ns
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6W
20
40
td(off)
tf
54
81
Turn-off Delay Time
Fall Time
11
20
SAFE OPERATING AREA CHARACTERISTICS
UNIT
Symbol
Test Conditions / Part Number
MIN
TYP
MAX
Characteristic
V
DS = 400 V, IDS = 0.813A, t = 20 sec., TC = 60°C
Watts
SOA1
325
Safe Operating Area
1
2
3
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
See MIL-STD-750 Method 3471
0.3
D=0.5
0.1
0.2
0.05
0.1
0.05
Note:
0.01
0.02
0.01
t
1
0.005
t
2
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
SINGLE PULSE
10-4
J
DM
θJC
C
0.001
10-5
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
80
80
9 V
8 V
V
=10, 12, 14 & 16V
V
=9V, 10V, 12V, 14 & 16V
8 V
GS
GS
60
40
20
0
60
40
20
0
7 V
7 V
6 V
5 V
6 V
5 V
0
20
40
60
80
100
0
4
8
12
16
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE2,TYPICALOUTPUTCHARACTERISTICS
FIGURE3,TYPICALOUTPUTCHARACTERISTICS
APL501J
40
30
20
10
0
1.30
1.20
1.10
1.00
0.90
0.80
T
= -55°C
NORMALIZED TO
J
V
= 10V
@
0.5
I
[Cont.]
GS
D
T
= +25°C
J
T
= +125°C
J
V
=10V
GS
V
> I (ON) x
R
(ON)MAX.
DS
D
DS
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
T
= +125°C
= +25°C
J
T
T = -55°C
J
J
V
=20V
GS
0
2
4
6
8
0
20
40
60
80
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4,TYPICALTRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
1.15
1.10
1.05
1.00
0.95
0.90
0.85
50
40
30
20
10
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
1.2
2.5
I
= 0.5
I
[Cont.]
D
D
V
= 10V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25
50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
175
30,000
OPERATION HERE
LIMITED BY (ON)
100
50
R
DS
100µS
1mS
10,000
5,000
C
C
iss
10
5
10mS
100mS
DC
1,000
500
oss
1
C
rss
.5
T
T
=+25°C
=+150°C
C
J
SINGLE PULSE
.1
100
1
V
5
10
50 100
500
.01
V
.1
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
1
10
50
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11,TYPICALCAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
APL501J
SOT-227(ISOTOP®)PackageOutline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030) 12.6 (.496)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Dimensions in Millimeters and (Inches)
Gate
ISOTOP®isaRegisteredTrademarkofSGSThomson.
"UL Recognized" File No. E145592
APT'sdevicesarecoveredbyoneormoreofthefollowingU.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
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