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APT1001RBNR-GULLWING [ADPOW]

Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN;

APT1001RBNR-GULLWING


元器件型号：	APT1001RBNR-GULLWING
生产厂家：	ADVANCED POWER TECHNOLOGY
描述和应用：	Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN 栅
PDF文件：	总2页 (文件大小：38K)
下载文档：	下载PDF数据表文档文件
型号参数：APT1001RBNR-GULLWING参数

APT1001RBVFR

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | TO-247AD

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20 ETC

APT1001RBVFR

POWER MOS V FREDFET

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19 ADPOW

APT1001RBVFR

POWER MOS V FREDFET

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31 ADPOW

APT1001RBVFRG

Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN

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1 MICROSEMI

APT1001RBVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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60 ADPOW

APT1001RBVRG

Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,

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0 MICROSEMI

APT1001RDN

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP

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27 ETC

APT1001RSLC

Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs

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19 ADPOW

APT1001RSVFR

POWER MOS V FREDFET

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22 ADPOW

APT1001RSVFR

POWER MOS V FREDFET

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15 ADPOW

APT1001RSVR

100% Avalanche Tested

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10 MICROSEMI

APT1001RSVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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40 ADPOW

APT1001RSVRG

100% Avalanche Tested

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6 MICROSEMI

APT10021DFN

TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 1KV V(BR)DSS | 40A I(D)

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30 ETC

APT10021DN

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP

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24 ETC

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