Toggle navigation
首页
加载中...
马上查询
×
马上查询
关闭背景特效
首页
|
元器件品牌
APT1004RBN
[ADPOW]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS; N沟道增强型高压功率MOSFET
元器件型号:
APT1004RBN
生产厂家:
ADVANCED POWER TECHNOLOGY
描述和应用:
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N沟道增强型高压功率MOSFET
高压 高电压电源
PDF文件:
总4页 (文件大小:55K)
下载文档:
下载PDF数据表文档文件
型号参数:APT1004RBN参数
查看货源
APT1004RBN-BUTT
4.4A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MICROSEMI
APT1004RBNG
Power Field-Effect Transistor, 4.4A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MICROSEMI
APT1004RBN-GULLWING
4.4A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MICROSEMI
APT1004RBNR
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4.4A I(D) | TO-247AD
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
14
ETC
APT1004RCN
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
50
ADPOW
APT1004RDN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
12
ETC
APT1004RDN
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
ADPOW
APT1004RGN
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
37
ADPOW
APT1004RKN
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
55
ADPOW
APT10050B2FLC
Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
1
ADPOW
APT10050B2LC
Power MOS VITM is a new generation of low gate charge, high voltage
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
110
ADPOW
APT10050B2LC
21A, 1000V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TMAX-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MICROSEMI
APT10050B2VFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
30
ADPOW
APT10050B2VFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
26
ADPOW
APT10050B2VFR_04
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
16
ADPOW
©2020 ICPDF网
联系我们和版权申明