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元器件品牌
APT1004
[ADPOW]
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS; N - 沟道增强型高压功率MOSFET
元器件型号：
APT1004
生产厂家：
ADVANCED POWER TECHNOLOGY
描述和应用：
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N - 沟道增强型高压功率MOSFET
高压 高电压电源
PDF文件：
总4页 (文件大小：54K)
下载文档：
下载PDF数据表文档文件
型号参数：APT1004参数
查看货源
APT10040B2VFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW
APT10040B2VFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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28
ADPOW
APT10040B2VFR_02
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
: Undefined variable $rtag in
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156
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17
ADPOW
APT10040B2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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14
ADPOW
APT10040B2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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10
ADPOW
APT10040B2VR
Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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1
MICROSEMI
APT10040B2VR_02
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
9
ADPOW
APT10040B2VRG
Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MICROSEMI
APT10040CFN
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 24.5A I(D)
Warning
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156
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8
ETC
APT10040DN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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15
ETC
APT10040LLC
Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
ADPOW
APT10040LVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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21
ADPOW
APT10040LVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
18
ADPOW
APT10040LVFR
Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MICROSEMI
APT10040LVFRG
Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MICROSEMI
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