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元器件品牌
APT10050LLC
[ADPOW]
Power MOS VITM is a new generation of low gate charge, high voltage; 功率MOS VITM是新一代的低栅电荷,高电压
元器件型号:
APT10050LLC
生产厂家:
ADVANCED POWER TECHNOLOGY
描述和应用:
Power MOS VITM is a new generation of low gate charge, high voltage
功率MOS VITM是新一代的低栅电荷,高电压
晶体 晶体管 功率场效应晶体管 开关 脉冲 栅 局域网
PDF文件:
总2页 (文件大小:72K)
下载文档:
下载PDF数据表文档文件
型号参数:APT10050LLC参数
查看货源
APT10050LVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW
APT10050LVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
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156
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18
ADPOW
APT10050LVFRG
Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Warning
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156
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0
MICROSEMI
APT10050LVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
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156
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210
ADPOW
APT10050LVRG
Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Warning
: Undefined variable $rtag in
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on line
156
-
1
MICROSEMI
APT10053LNR
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 20A I(D) | TO-264AA
Warning
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285
ETC
APT10057WVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
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on line
156
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45
ADPOW
APT10060EN
Transistor
Warning
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on line
156
-
0
ADPOW
APT10078BFLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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25
ADPOW
APT10078BFLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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29
ADPOW
APT10078BFLL
Power Field-Effect Transistor, 14A I(D), 1000V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
Warning
: Undefined variable $rtag in
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156
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0
MICROSEMI
APT10078BFLL_06
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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22
ADPOW
APT10078BFLLG
Power Field-Effect Transistor, 14A I(D), 1000V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
1
MICROSEMI
APT10078BLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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33
ADPOW
APT10078BLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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19
ADPOW
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