APT13GP120B [ADPOW]
POWER MOS 7 IGBT; 功率MOS 7 IGBT
| 型号： | APT13GP120B |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | POWER MOS 7 IGBT |
| 文件： | 总6页 (文件大小：409K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1200V
APT13GP120B
APT13GP120S
APT13GP120BG* APT13GP120SG*
®
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
®
B
POWER MOS 7 IGBT
D3PAK
S
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
C
G
E
G
C
E
• Low Conduction Loss
• Low Gate Charge
• 100 kHz operation @ 600V, 10A
• 50 kHz operation @ 600V, 16A
• RBSOA Rated
C
E
• Ultrafast Tail Current shutoff
G
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Parameter
Symbol
UNIT
APT13GP120B_S(G)
VCES
VGE
IC1
Collector-Emitter Voltage
1200
Volts
±30
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
41
IC2
20
50
Amps
1
Pulsed Collector Current
ICM
Reverse Bias Safe Operating Area @ TJ = 150°C
50A @ 960V
250
RBSOA
PD
Total Power Dissipation
Watts
°C
TJ,TSTG
Operating and Storage Junction Temperature Range
-55 to 150
300
TL
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
Units
V(BR)CES
VGE(TH)
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 500µA)
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 13A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 13A, Tj = 125°C)
1200
3
4.5
3.3
3.0
6
Volts
3.9
VCE(ON)
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
500
ICES
IGES
µA
nA
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V)
3000
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT13GP120B_S(G)
UNIT
Test Conditions
Capacitance
MIN
TYP
MAX
Cies
1145
90
Input Capacitance
Coes
pF
V
Output Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Cres
15
Reverse Transfer Capacitance
VGEP
7.5
55
Gate-to-Emitter Plateau Voltage
Gate Charge
VGE = 15V
VCE = 600V
IC = 13A
3
Qg
Total Gate Charge
Qge
nC
8
Gate-Emitter Charge
Qgc
26
Gate-Collector ("Miller") Charge
TJ = 150°C, RG = 5Ω, VGE
=
Reverse Bias Safe Operating Area
RBSOA
td(on)
A
50
15V, L = 100µH,VCE = 960V
Inductive Switching (25°C)
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
9
VCC = 600V
VGE = 15V
IC = 13A
tr
12
ns
td(off)
28
tf
34
RG = 5Ω
4
Eon1
Eon2
Turn-on Switching Energy
115
330
165
9
TJ = +25°C
5
µJ
ns
Turn-on Switching Energy (Diode)
6
Eoff
Turn-off Switching Energy
td(on)
Inductive Switching (125°C)
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
tr
VCC = 600V
VGE = 15V
IC = 13A
12
td(off)
tf
70
Current Fall Time
200
225
710
840
RG = 5Ω
4 4
Eon1
Eon2
Eoff
Turn-on Switching Energy
TJ = +125°C
55
µJ
Turn-on Switching Energy (Diode)
6
Turn-off Switching Energy
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
UNIT
MIN
TYP
MAX
.50
R
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
θJC
θJC
°C/W
gm
R
N/A
WT
5.9
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction temperature.
For Combi devices, Ices includes both IGBT and FRED leakages
See MIL-STD-750 Method 3471.
Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5
6
Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
APT13GP120B_S(G)
40
35
30
25
20
15
10
40
35
30
25
TJ = -55°C
TJ = -55°C
20
15
TJ = 125°C
10
TJ = 125°C
TJ = 25°C
TJ = 25°C
5
5
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
CE
CE
FIGURE 1, Output Characteristics(T = 25°C)
FIGURE 2, Output Characteristics (T = 125°C)
J
J
16
14
12
40
250µs PULSE
TEST<0.5 % DUTY
CYCLE
I
T
= 13A
= 25°C
C
J
35
30
25
20
15
10
5
V
= 240V
CE
V
= 600V
CE
10
8
V
= 960V
TJ = -55°C
TJ = 25°C
CE
6
4
TJ = 125°C
2
0
0
0
1
2
3
4
5
6
7
8
9
0
10
20
30
40
50
60
V
, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
GE
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
5
4
3
2
6
5
4
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
= 26A
C
I
= 26A
= 13A
C
I
= 13A
C
I
C
3
2
I
= 6.5A
C
I
= 6.5A
C
1
0
1
0
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
6
8
10
12
14
16
-55 -25
0
25
50
75 100 125
V
, GATE-TO-EMITTER VOLTAGE (V)
T , Junction Temperature (°C)
GE
J
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
60
1.10
50
40
30
20
1.05
1.00
0.95
0.90
10
0
-50 -25
0
25
50
75
100 125
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
APT13GP120B_S(G)
100
90
80
70
60
50
40
30
20
12
10
8
V
= 15V
GE
VGE =15V,TJ=125°C
6
4
VCE = 600V
TJ = 25°C or 125°C
RG = 5Ω
2
VCE = 600V
RG = 5Ω
VGE =15V,TJ=25°C
10
0
L = 100 µH
L = 100 µH
0
I
5
10
15
20
25
30
5
10
15
20
25
30
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
300
30
RG = 5Ω, L = 100µH, VCE = 600V
RG = 5Ω, L = 100µH, VCE = 600V
250
200
150
100
50
25
20
15
10
5
T
J = 125°C, VGE = 15V
TJ = 25 or 125°C,VGE = 15V
T
J = 25°C, VGE = 15V
0
I
0
I
5
10
15
20
25
30
5
10
15
20
25
30
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
1600
1400
1200
1000
800
600
400
200
0
1400
1200
1000
800
600
400
200
0
V
V
R
=
=
= 5Ω
600V
+15V
V
V
R
=
=
= 5Ω
600V
+15V
CE
GE
CE
GE
G
G
T
J = 125°C
T
= 125°C
J
T
= 25°C
J
T
=
25°C
25
J
5
10
15
20
25
30
5
10
15
20
30
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
1800
1600
V
V
R
=
=
= 5Ω
600V
+15V
E
26A
CE
GE
off,
1600
1400
1200
1000
800
1400
1200
1000
800
G
E
26A
on2,
E
26A
on2,
E
13A
off,
E
13A
off,
E
26A
off,
E
13A
on2,
E
13A
600
on2,
600
E
6.5A
E
off,
400
400
E
6.5A
on2,
6.5A
20
V
V
T
=
=
600V on2,
+15V
CE
GE
200
0
200
0
= 125°C
E
6.5A
off,
J
0
10
30
40
50
25
50
75
100
125
R , GATE RESISTANCE (OHMS)
T , JUNCTION TEMPERATURE (°C)
G
J
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
APT13GP120B_S(G)
3,000
60
50
40
30
20
10
0
Cies
1,000
500
100
50
Coes
Cres
10
1
0
10
20
30
40
50
0
V
200
400
600
800
1000
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
, COLLECTOR TO EMITTER VOLTAGE
CE
CE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18,Minimim Switching Safe Operating Area
0.60
0.50
0.9
0.40
0.7
0.30
0.5
Note:
t
0.20
0.3
1
t
2
0.10
0.1
t
1
t
/
2
Duty Factor D =
Peak T = P x Z
SINGLE PULSE
10-3
+ T
C
J
DM
θJC
0.05
0
10-5
10-4
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
181
100
RC MODEL
Fmax = min (fmax, fmax2
)
50
Junction
0.05
temp. (°C)
fmax1
=
=
td(on) + tr + td(off) + tf
0.216
0.284
0.006F
0.161F
Pdiss - Pcond
Eon2 + Eoff
Power
(watts)
fmax2
T
T
=
125°C
75°C
J
=
C
D = 50 %
V
R
TJ - TC
RθJC
=
XXXV
Pdiss
=
CE
= 5Ω
G
10
Case temperature. (°C)
5
10
15
20
25
30
I , COLLECTOR CURRENT (A)
C
Figure 20, Operating Frequency vs Collector Current
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
APT13GP120B_S(G)
Gate Voltage
10%
APT15DQ120
T
= 125°C
J
td(on)
tr
VCE
IC
VCC
Collector Current
90%
5%
5%
10%
A
Collector Voltage
Switching Energy
D.U.T.
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 21, Inductive Switching Test Circuit
90%
Gate Voltage
T
= 125°C
J
td(off)
Collector Voltage
90%
tf
10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
TO-268 (D3) Package Outline
TO-247 Package Outline
e3
SAC: Tin, Silver, Copper
SAC: Tin, Silver, Copper
e1
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
13.41 (.528)
13.51(.532)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
1.04 (.041)
1.15(.045)
20.80 (.819)
21.46 (.845)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99(.551)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
3.81 (.150)
1.98 (.078)
2.08 (.082)
4.06 (.160)
(Base of Lead)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
2.67 (.105)
2.84 (.112)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
1.22 (.048)
1.32 (.052)
Heat Sink (Collector)
and Leads are Plated
Gate
Collector
Emitter
5.45 (.215) BSC
{2 Plcs.}
Emitter
Collector
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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