概述
规格参数
数据手册APT15GP60K 概述
POWER MOS 7 IGBT 功率MOS 7 IGBT IGBT
APT15GP60K 规格参数
| 是否Rohs认证： | 不符合 | 生命周期： | Transferred |
| 包装说明： | TO-220, 3 PIN | Reach Compliance Code： | unknown |
| 风险等级： | 5.67 | Is Samacsys： | N |
| 其他特性： | LOW CONDUCTION LOSS | 外壳连接： | COLLECTOR |
| 最大集电极电流 (IC)： | 56 A | 集电极-发射极最大电压： | 600 V |
| 配置： | SINGLE | 门极发射器阈值电压最大值： | 6 V |
| 门极-发射极最大电压： | 20 V | JEDEC-95代码： | TO-220AB |
| JESD-30 代码： | R-PSFM-T3 | JESD-609代码： | e0 |
| 元件数量： | 1 | 端子数量： | 3 |
| 最高工作温度： | 150 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | FLANGE MOUNT |
| 峰值回流温度（摄氏度）： | NOT SPECIFIED | 极性/信道类型： | N-CHANNEL |
| 最大功率耗散 (Abs)： | 291 W | 认证状态： | Not Qualified |
| 子类别： | Insulated Gate BIP Transistors | 表面贴装： | NO |
| 端子面层： | Tin/Lead (Sn/Pb) | 端子形式： | THROUGH-HOLE |
| 端子位置： | SINGLE | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| 晶体管应用： | POWER CONTROL | 晶体管元件材料： | SILICON |
| 标称断开时间 (toff)： | 157 ns | 标称接通时间 (ton)： | 20 ns |
| Base Number Matches： | 1 |
APT15GP60K 数据手册
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PDF下载APT15GP60K
600V
®
POWER MOS 7 IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
TO-220
G
• Low Conduction Loss
• Low Gate Charge
• 100 kHz operation @ 400V, 19A
• 200 kHz operation @ 400V, 12A
• SSOA rated
C
C
E
E
G
• Ultrafast Tail Current shutoff
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Parameter
UNIT
Symbol
VCES
VGE
APT15GP60K
Collector-Emitter Voltage
Gate-Emitter Voltage
600
±20
±30
Volts
VGEM
IC1
Gate-Emitter Voltage Transient
56
27
65
Continuous Collector Current @ TC = 25°C
Amps
IC2
Continuous Collector Current @ TC = 110°C
1
ICM
Pulsed Collector Current
@ TC = 25°C
SSOA
PD
Switching Safe Operating Area @ TJ = 150°C
65A @ 600V
250
Watts
°C
Total Power Dissipation
TJ,TSTG
TL
-55 to 150
300
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
600
3
TYP
MAX
UNIT
BVCES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250µA)
VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 25°C)
4.5
2.2
2.1
6
Volts
2.7
VCE(ON)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C)
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)
250
2500
±100
ICES
µA
nA
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V)
IGES
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT15GP60K
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
TYP
1685
210
15
MAX
UNIT
Input Capacitance
Cies
Coes
Cres
VGEP
Qg
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Output Capacitance
pF
V
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
7.5
55
Gate Charge
3
VGE = 15V
Total Gate Charge
V
CE = 300V
Qge
nC
Gate-Emitter Charge
12
IC = 15A
Qgc
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
15
SSOA
TJ = 150°C, RG = 5Ω, VGE
=
65
A
15V, L = 100µH,VCE = 600V
td(on)
tr
td(off)
tf
8
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Inductive Switching (25°C)
VCC = 400V
12
ns
VGE = 15V
IC = 15A
29
58
RG = 5Ω
4
Eon1
Eon2
Eoff
td(on)
tr
Turn-on Switching Energy
Turn-on Switching Energy (Diode) 5
130
152
121
8
TJ = +25°C
µJ
ns
6
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Inductive Switching (125°C)
VCC = 400V
12
VGE = 15V
td(off)
tf
69
IC = 15A
RG = 5Ω
Current Fall Time
88
4 4
Turn-on Switching Energy
Eon1
Eon2
Eoff
130
267
268
TJ = +125°C
55
Turn-on Switching Energy (Diode)
µJ
66
Turn-off Switching Energy
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
.50
UNIT
°C/W
gm
RΘJC
RΘJC
WT
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
N/A
1.90
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction temperature.
For Combi devices, Ices includes both IGBT and FRED leakages
See MIL-STD-750 Method 3471.
Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5
6
Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.)
Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
TYPICALPERFORMANCECURVES
APT15GP60K
30
30
25
20
15
V
= 10V.
V
= 15V.
GE
GE
250µs PULSE TEST
<0.5 % DUTY CYCLE
250µs PULSE TEST
<0.5 % DUTY CYCLE
25
20
15
T =25°C
T =25°C
C
C
10
5
10
5
T =-55°C
C
T =-55°C
C
T =125°C
C
T =125°C
C
0
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
V
,COLLECTER-TO-EMITTERVOLTAGE(V)
V
,COLLECTER-TO-EMITTERVOLTAGE(V)
CE
CE
FIGURE 1, Output Characteristics(V = 15V)
FIGURE 2, Output Characteristics (V = 10V)
GE
GE
100
16
14
12
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
T
= 15A
= 25°C
C
J
T
= -55°C
J
80
60
40
20
0
V
= 120V
CE
V
= 300V
CE
10
8
V
= 480V
CE
6
T
J
= 25°C
4
T
= 125°C
J
2
0
0
2
4
6
8
10
12
0
10
20
30
40
50
60
V
, GATE-TO-EMITTER VOLTAGE(V)
GATE CHARGE (nC)
GE
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
3.5
3
3.5
3
T
= 25°C.
J
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
=30A
I
C
I
=30A
C
2.5
2
2.5
2
= 15A
I
= 15A
C
C
I
= 7.5A
C
I
= 7.5A
C
1.5
1
1.5
1
V
= 15V.
0.5
0
0.5
0
GE
250µs PULSE TEST
<0.5 % DUTY CYCLE
6
8
10
12
14
16
-50 -25
0
25
50
75
100 125
V
,GATE-TO-EMITTERVOLTAGE(V)
T , Junction Temperature (°C)
GE
J
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE6,OnStateVoltagevsJunctionTemperature
1.2
80
70
60
50
40
30
20
1.15
1.10
1.05
1.0
0.95
0.9
10
0
0.85
0.8
-50 -25
0
25
50
75
100 125
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE7,BreakdownVoltage vs.JunctionTemperature
FIGURE8,DCCollectorCurrentvsCaseTemperature
APT15GP60K
18
16
14
12
10
8
80
70
60
50
40
30
20
VGE =15V,TJ=125°C
V
= 10V
GE
VGE =10V,TJ=125°C
V
= 15V
GE
VGE =15V,TJ=25°C
6
4
2
0
VGE =10V,TJ=25°C
V
= 400V
T = 25°C or 125°C
CE
V
= 400V
R =5Ω
L = 100 µH
CE
J
R
10
0
=5Ω
G
G
L = 100 µH
5
10
15
20
25
30
5
10
15
20
25
30
I
, COLLECTOR TO EMITTER CURRENT(A)
I
, COLLECTOR TO EMITTER CURRENT(A)
CE
CE
FIGURE9, Turn-OnDelayTimevsCollectorCurrent
FIGURE10, Turn-OffDelayTimevsCollectorCurrent
100
30
T = 25 or 125°C,VGE =10V
J
25
20
15
10
80
T = 125°C, VGE = 10V or 15V
J
60
T = 25°C, VGE = 10V or 15V
J
40
T = 25 or 125°C,VGE =15V
20
J
5
R
G =5Ω, L = 100µH, VCE = 400V
R
G =5Ω, L = 100µH, VCE = 400V
0
0
5
10
15 20 25
, COLLECTOR TO EMITTER CURRENT(A)
FIGURE 11, Current Rise Time vs Collector Current
30
5
I
10
15
20
25
30
I
, COLLECTOR TO EMITTER CURRENT(A)
CE
CE
FIGURE 12, Current Fall Time vs Collector Current
700
700
600
500
400
300
200
V
=
400V
L = 100 µH
= 5 Ω
V
=
400V
CE
CE
T = 125°C, VGE = 10V or 15V
J
L = 100 µH
R
R
= 5 Ω
G
G
600
500
400
300
200
TJ=125°C,V =15V
GE
TJ=125°C,V =10V
GE
TJ= 25°C, V =15V
GE
100
0
100
0
T = 25°C, VGE = 10Vor 15V
J
TJ = 25°C, V =10V
GE
0
5
10
15
20
25
30
5
10
,COLLECTORTOEMITTERCURRENT(A)
CE
15
20
25
30
I
,COLLECTORTOEMITTERCURRENT(A)
I
CE
FIGURE13,Turn-OnEnergyLossvsCollectorCurrent
FIGURE 14, Turn Off Energy Loss vs Collector Current
700
900
V
V
R
=
=
= 5 Ω
400V
+15V
V
V
=
400V
CE
GE
CE
GE
E
30A
on2
= +15V
800
700
600
500
400
300
TJ = 125°C
G
600
500
400
300
200
E
30A
15A
off
E
30A
on2
E
30A
off
E
on2
E
15A
off
E
15A
on2
200
100
0
E
7.5A
on2
E
7.5A
on2
E
15A
100
0
off
E
7.5A
off
E
7.5A
off
0
10
20
30
40
50
-50 -25
0
25
50
75
100 125
R ,GATE RESISTANCE(OHMS)
T ,JUNCTIONTEMPERATURE(°C)
G
J
FIGURE 15, Switching EnergyLosses vs. GateResistance
FIGURE16,SwitchingEnergyLosses vsJunctionTemperature
TYPICALPERFORMANCECURVES
APT15GP60K
4,000
70
60
50
40
30
20
C
ies
1,000
500
C
oes
100
50
C
res
10
0
10
0
10
20
30
40
50
0
100 200 300 400 500 600 700
V ,COLLECTORTOEMITTERVOLTAGE
CE
V
,COLLECTOR-TO-EMITTERVOLTAGE(VOLTS)
CE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18, Minimim Switching Safe Operating Area
0.60
0.50
0.9
0.40
0.7
0.30
0.5
Note:
0.20
t
1
0.3
t
2
0.10
t
1
0.1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
0.05
J
DM θJC
C
SINGLEPULSE
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
Figure19A,MaximumEffectiveTransientThermalImpedance,Junction-To-CasevsPulseDuration
292
RC MODEL
Junction
temp. ( ”C)
0.216
0.284
0.00600
0.164
100
50
Power
(Watts)
Case temperature
T
T
=
125°C
75°C
J
=
C
D = 50 %
V
=
400V
CE
R
= 5 Ω
G
10
5
10 15 20 25 30 35 40 45 50
FIGURE19B, TRANSIENT THERMALIMPEDANCE MODEL
I , COLLECTOR CURRENT (A)
C
Figure 20, Operating Frequency vs Collector Current
Fmax = min(fmax1,fmax 2
)
0.05
fmax1
=
td(on) + tr + td(off ) + tf
P
− P
diss
cond
fmax 2
=
Eon2 + Eoff
T − TC
RθJC
J
P
=
diss
APT15GP60K
Gate Voltage
APT15DF60
10%
TJ = 125 C
td(on)
VCE
IC
VCC
Collector Current
t
r
90%
A
10%
5 %
5%
D.U.T.
Collector Voltage
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure22,Turn-onSwitchingWaveformsandDefinitions
VTEST
*DRIVER SAME TYPE AS D.U.T.
90%
Gate Voltage
T
TJ = 125 C
Collector Voltage
A
td(off)
tf
VCE
IC
90%
100uH
A
VCLAMP
B
10%
Collector Current
0
Switching Energy
D.U.T.
DRIVER*
Figure23,Turn-offSwitchingWaveformsandDefinitions
Figure 24, E
Test Circuit
ON1
TO-220ACPackageOutline
10.66 (.420)
9.66 (.380)
1.39 (.055)
0.51 (.020)
5.33 (.210)
4.83 (.190)
Collector
6.85 (.270)
5.85 (.230)
4.08 (.161) Dia.
3.54 (.139)
3.42 (.135)
2.54 (.100)
16.51 (.650)
14.23 (.560)
6.35 (.250)
MAX.
14.73 (.580)
12.70 (.500)
Gate
0.50 (.020)
0.41 (.016)
Collector
Emitter
2.92 (.115)
2.04 (.080)
1.01 (.040) 3-Plcs.
0.38 (.015)
1.77 (.070) 3-Plcs.
1.15 (.045)
2.79 (.110)
2.29 (.090)
4.82 (.190)
3.56 (.140)
5.33 (.210)
4.83 (.190)
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
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