APT20M21DN [ADPOW]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
APT20M21DN
元器件型号: APT20M21DN
生产厂家: ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述和应用:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

PDF文件: 总4页 (文件大小:380K)
下载文档:  下载PDF数据表文档文件
型号参数:APT20M21DN参数

APT20M21JN

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 120A I(D)

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18 ETC

APT20M22

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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16 ADPOW

APT20M22

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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44 ADPOW

APT20M22B2VFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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37 ADPOW

APT20M22B2VFR

Power Field-Effect Transistor, 100A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TMAX-3

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0 ADPOW

APT20M22B2VFRG

Power Field-Effect Transistor, 100A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-247, TMAX-3

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0 MICROSEMI

APT20M22B2VR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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60 ADPOW

APT20M22B2VRG

Power Field-Effect Transistor, 100A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CLIP MOUNTED TO-247, TMAX-3

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0 MICROSEMI

APT20M22JVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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28 ADPOW

APT20M22JVFR

Power Field-Effect Transistor, 97A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4

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0 ADPOW

APT20M22JVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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52 ADPOW

APT20M22JVRU2

ISOTOP Boost chopper MOSFET Power Module

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25 MICROSEMI

APT20M22JVRU2

ISOTOP Boost chopper MOSFET Power Module

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31 ADPOW

APT20M22JVRU3

ISOTOP Buck chopper MOSFET Power Module

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18 ADPOW

APT20M22JVRU3

ISOTOP Buck chopper MOSFET Power Module

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29 MICROSEMI