关闭背景特效

APT20M42HVR [ADPOW]

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.; 功率MOS V是新一代高压N沟道增强型功率MOSFET 。

APT20M42HVR


元器件型号：	APT20M42HVR
生产厂家：	ADVANCED POWER TECHNOLOGY
描述和应用：	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 功率MOS V是新一代高压N沟道增强型功率MOSFET 。晶体晶体管功率场效应晶体管开关脉冲高压局域网
PDF文件：	总4页 (文件大小：70K)
下载文档：	下载PDF数据表文档文件
型号参数：APT20M42HVR参数

APT20M45BNFR

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 58A I(D) | TO-247AD

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26 ETC

APT20M45BNFR

58A, 200V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD

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0 MICROSEMI

APT20M45BNFR-BUTT

暂无描述

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0 ADPOW

APT20M45BNFR-GULLWING

Power Field-Effect Transistor, 58A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

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0 ADPOW

APT20M45BNFR-GULLWING

暂无描述

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0 MICROSEMI

APT20M45BNR

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 58A I(D) | TO-247AD

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36 ETC

APT20M45BNR-BUTT

Power Field-Effect Transistor, 58A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

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0 ADPOW

APT20M45BNR-BUTT

58A, 200V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

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3 MICROSEMI

APT20M45BNR-GULLWING

Power Field-Effect Transistor, 58A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

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0 ADPOW

APT20M45BNR-GULLWING

暂无描述

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0 MICROSEMI

APT20M45BVFR

Power MOS V is a new generation of high voltage N-Channel enhancement

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41 ADPOW

APT20M45BVFRG

Power Field-Effect Transistor, 56A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN

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1 MICROSEMI

APT20M45BVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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37 ADPOW

APT20M45BVR

POWER MOS V®

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29 MICROSEMI

APT20M45BVRG

POWER MOS V®

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20 MICROSEMI

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