APT30M75BLL_03 [ADPOW]
POWER MOS 7 R MOSFET; 功率MOS 7 R MOSFET
| 型号： | APT30M75BLL_03 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | POWER MOS 7 R MOSFET |
| 文件： | 总5页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT30M75BLL
APT30M75SLL
300V 44A 0.075Ω
R
BLL
POWER MOS 7 MOSFET
D3PAK
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
TO-247
SLL
D
S
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• IncreasedPowerDissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
G
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT30M75
300
UNIT
VDSS
ID
Drain-Source Voltage
Volts
Continuous Drain Current @ TC = 25°C
44
Amps
Volts
1
IDM
Pulsed Drain Current
176
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
329
Watts
W/°C
PD
2.63
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
44
1
EAR
EAS
30
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
300
44
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 22A)
Ohms
µA
0.075
100
500
±100
5
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
IDSS
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMICCHARACTERISTICS
Symbol Characteristic
APT30M75BLL-SLL
TestConditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
3018
771
43
V
= 0V
GS
Output Capacitance
V
= 25V
DS
pF
f = 1 MHz
Reverse Transfer Capacitance
3
Total Gate Charge
V
= 10V
57
GS
V
= 200V
Qgs
Qgd
td(on)
tr
DD
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
21
nC
ns
I
= 44A @ 25°C
D
23
RESISTIVESWITCHING
13
V
= 15V
GS
3
V
= 200V
DD
I
= 44A @ 25°C
td(off)
20
Turn-off Delay Time
Fall Time
D
R
= 0.6Ω
G
tf
2
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy
268
189
402
220
V
= 200V, V = 15V
GS
DD
I
= 44A, R = 5Ω
Turn-off Switching Energy
D
G
INDUCTIVESWITCHING@125°C
µJ
6
Turn-on Switching Energy
V
= 200V V = 15V
GS
DD
I
= 44A, R = 5Ω
Turn-off Switching Energy
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol
IS
MIN
TYP
MAX
44
Characteristic / Test Conditions
UNIT
Continuous Source Current (Body Diode)
Amps
ISM
1
176
1.3
Pulsed Source Current
(Body Diode)
2
VSD
t rr
Diode Forward Voltage (VGS = 0V, IS = -ID44A)
Volts
ns
416
5.9
Reverse Recovery Time (IS = -ID44A, dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID44A, dlS/dt = 100A/µs)
Q rr
µC
dv
/
dv
5
V/ns
5
Peak Diode Recovery
/
dt
dt
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.38
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
4 Starting T = +25°C, L = 1.34mH, R = 25Ω, Peak I = 44A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
device itself.
I
≤ -I 44A
/
≤ 700A/µs
V
R ≤ V
T ≤ 150°C
J
dt
S
D
DSS
6
Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.40
0.9
0.7
0.5
0.3
0.35
0.30
0.25
0.20
0.15
0.10
Note:
t
1
t
2
t
1
Duty Factor D =
/
t
2
0.1
0.05
0
Peak T = P
x Z + T
J
DM
θJC C
0.05
SINGLEPULSE
10-5
10-4
10-3
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
10-2
10-1
1.0
Typical Performance Curves
APT30M75BLL-SLL
100
90
80
70
60
50
40
30
20
RC MODEL
V
=15 &10V
GS
8.5V
8V
0.0329
0.00334
0.00802
0.165
Power
(Watts)
7.5
7V
Junction
temp. ( ”C)
0.158
0.189
6.5V
6V
10
0
Case temperature
0
5
10
15
20
25
30
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
160
1.40
NORMALIZED TO
V
> I (ON) x
R
MAX.
DS(ON)
DS
D
V
= 10V
@
I
= 22A
250µSEC. PULSE TEST
GS
D
140
120
100
80
@ <0.5 % DUTY CYCLE
1.30
1.20
1.10
1.00
T
= -55°C
J
V
=10V
GS
60
V
=20V
GS
40
T
= +25°C
J
0.90
0.80
20
0
T
= +125°C
J
0
2
4
6
8
10
12
14
0
20
40
60
80
100
120
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5,R
vsDRAINCURRENT
DS(ON)
1.15
1.10
1.05
1.00
45
40
35
30
25
20
15
10
5
0.95
0.90
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
2.5
1.2
I
= 22A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
2.0
1.5
1.0
0.5
0.0
0.7
0.6
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8, R
vs. TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
DS(ON)
APT30M75BLL-SLL
176
100
20,000
10,000
OPERATIONHERE
LIMITEDBYR (ON)
DS
C
iss
1,000
100
10
C
100µS
oss
10
1mS
C
rss
T
=+25°C
C
T =+150°C
10mS
J
SINGLEPULSE
1
16
12
1
10
100
300
0
V
10
20
30
40
50
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
200
I
= 44A
D
100
V
=60V
T =+150°C
J
DS
V
=150V
T =+25°C
J
DS
8
V
=240V
DS
10
4
0
1
0
10
20
30
40
50 60
70 80
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
Q ,TOTALGATECHARGE(nC)
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
g
SD
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
70
50
V
= 200V
DD
= 5Ω
R
T
G
60
50
40
30
20
= 125°C
J
t
40
30
20
10
0
d(off)
L = 100µH
V
= 200V
DD
R
= 5Ω
G
T
= 125°C
t
J
f
L = 100µH
t
r
t
d(on)
10
0
5
15
25
35
I
45
55
65
75
5
15
25
35
I
45
(A)
55
65
75
(A)
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
800
800
600
V
= 200V
DD
= 5Ω
R
T
G
700
600
500
= 125°C
J
E
on
L = 100µH
includes
E
ON
diode reverse recovery.
E
on
400
200
0
400
300
200
100
0
E
off
V
I
= 200V
DD
= 44A
D
T
= 125°C
J
L = 100µH
includes
E
off
E
ON
diode reverse recovery.
5
15
25
35
45
(A)
55
65
75
0
5
10 15 20 25 30 35 40 45 50
R ,GATERESISTANCE(Ohms)
I
D
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT30M75BLL-SLL
Gate Voltage
10 %
90%
d(off)
Gate Voltage
T
= 125 C
T
= 125 C
J
J
t
t
d(on)
t
r
Drain Voltage
Drain Current
90%
Drain Current
Drain Voltage
90%
t
f
5 %
5 %
10%
0
10 %
Switching Energy
Switching Energy
Figure18,Turn-onSwitchingWaveformsandDefinitions
Figure19,Turn-offSwitchingWaveformsandDefinitions
APT30D30B
VCE
IC
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
D3PAKPackageOutline
TO-247 Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
4.69 (.185)
15.95 (.628)
16.05 (.632)
13.41 (.528)
13.51 (.532)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15 (.045)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99 (.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.}
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT'sdevicesarecoveredbyoneormoreofthefollowingU.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
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