APT40N60JCU3 [ADPOW]
ISOTOP Buck chopper Super Junction MOSFET Power Module; ISOTOP降压斩波超级结MOSFET功率模块
| 型号： | APT40N60JCU3 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | ISOTOP Buck chopper Super Junction MOSFET Power Module |
| 文件： | 总8页 (文件大小：485K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT40N60JCU3
ISOTOP® Buck chopper
Super Junction
VDSS = 600V
RDSon = 70mꢀ max @ Tj = 25°C
ID = 40A @ Tc = 25°C
D
Application
Sꢁ AC and DC motor control
Sꢁ Switched Mode Power Supplies
Features
Sꢁ
G
S
-
-
-
-
Ultra low RDSon
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Sꢁ ISOTOP® Package (SOT-227)
Sꢁ Very low stray inductance
Sꢁ High level of integration
A
Benefits
Sꢁ Outstanding performance at high frequency operation
Sꢁ Stable temperature behavior
A
S
Sꢁ Very rugged
Sꢁ Direct mounting to heatsink (isolated package)
Sꢁ Low junction to case thermal resistance
Sꢁ Easy paralleling due to positive TC of VCEsat
D
G
ꢀ
ISOTOP
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
ID
Drain - Source Breakdown Voltage
Continuous Drain Current
600
40
V
Tc = 25°C
Tc = 80°C
A
30
IDM
VGS
Pulsed Drain current
120
±20
70
Gate - Source Voltage
Drain - Source ON Resistance
V
mꢀ
W
RDSon
PD
Maximum Power Dissipation
Tc = 25°C
Tc = 80°C
290
IAR
Avalanche current (repetitive and non repetitive)
20
1
A
EAR
Repetitive Avalanche Energy
mJ
EAS
IFAV
IFRMS
Single Pulse Avalanche Energy
1800
30
Maximum Average Forward Current
Duty cycle=0.5
A
RMS Forward Current (Square wave, 50% duty)
39
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
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APT website – http://www.advancedpower.com
APT40N60JCU3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 250µA
600
2.1
V
VGS = 0V,VDS = 600V Tj = 25°C
VGS = 0V,VDS = 600V Tj = 125°C
25
250
70
IDSS
Zero Gate Voltage Drain Current
µA
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
V
GS = 10V, ID = 20A
mꢀ
V
VGS = VDS, ID = 1mA
3
3.9
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±100 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
7015
VGS = 0V
VDS = 25V
f = 1MHz
pF
Output Capacitance
2565
212
Reverse Transfer Capacitance
Qg
Qgs
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
259
29
VGS = 10V
VBus = 300V
ID = 40A
nC
Qgd
Td(on)
Tr
111
20
30
115
10
Resistive Switching
V
GS = 15V
VBus = 380V
ID = 40A
ns
Td(off) Turn-off Delay Time
Tf
RG = 1.8ꢀ
Fall Time
Inductive switching @ 25°C
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy ꢀ
Turn-off Switching Energy ꢀ
Turn-on Switching Energy ꢀ
Turn-off Switching Energy ꢀ
670
980
V
GS = 15V, VBus = 400V
µJ
µJ
ID = 40A, RG = 5Ω
Inductive switching @ 125°C
1100
1206
V
GS = 15V, VBus = 400V
ID = 40A, RG = 5Ω
ꢁ Eon includes diode reverse recovery
ꢀ In accordance with JEDEC standard JESD24-1.
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APT website – http://www.advancedpower.com
APT40N60JCU3
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
IF = 30A
Min Typ Max Unit
1.6
1.9
1.4
1.8
VF
Diode Forward Voltage
V
IF = 60A
IF = 30A
Tj = 125°C
Tj = 25°C
Tj = 125°C
VR = 600V
VR = 600V
VR = 200V
250
500
IRM
CT
Maximum Reverse Leakage Current
Junction Capacitance
µA
pF
44
23
IF=1A,VR=30V
Reverse Recovery Time
Tj = 25°C
di/dt =100A/µs
trr
ns
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
85
160
4
Reverse Recovery Time
IF = 30A
IRRM
Qrr
Maximum Reverse Recovery Current
A
VR = 400V
di/dt =200A/µs
8
130
700
Reverse Recovery Charge
nC
Tj = 125°C
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
70
1300
30
ns
nC
A
IF = 30A
VR = 400V
di/dt =1000A/µs
Tj = 125°C
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
CoolMos
Diode
0.43
RthJC
Junction to Case
°C/W
1.21
20
RthJA
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
VISOL
2500
-55
V
TJ,TSTG Storage Temperature Range
150
300
1.5
°C
TL
Max Lead Temp for Soldering:0.063” from case for 10 sec
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
N.m
g
Wt
Package Weight
29.2
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
0.45
0.4
0.9
0.7
0.5
0.35
0.3
0.25
0.2
0.3
0.15
0.1
0.1
Single Pulse
0.05
0
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Fig 1, Maximum Effective transient thermal Impedance, Junction to case vs Pulse Duration
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APT website – http://www.advancedpower.com
APT40N60JCU3
45
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature (°C)
Figure 6, DC Drain Current vs Case Temperature
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APT website – http://www.advancedpower.com
APT40N60JCU3
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APT website – http://www.advancedpower.com
APT40N60JCU3
Typical Diode Performance Curve
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APT website – http://www.advancedpower.com
APT40N60JCU3
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APT website – http://www.advancedpower.com
APT40N60JCU3
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
r = 4.0 (.157)
(2 places)
25.4 (1.000)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030) 12.6 (.496)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
Drain
Anode
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
Source
Dimensions in Millimeters and (Inches)
Gate
ISOTOP® is a Registered Trademark of SGS Thomson
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APT website – http://www.advancedpower.com
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