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APT4585BN-GULLWING [ADPOW]

Power Field-Effect Transistor, 9.5A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN;

APT4585BN-GULLWING


元器件型号：	APT4585BN-GULLWING
生产厂家：	ADVANCED POWER TECHNOLOGY
描述和应用：	Power Field-Effect Transistor, 9.5A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN 局域网脉冲晶体管
PDF文件：	总4页 (文件大小：155K)
下载文档：	下载PDF数据表文档文件
型号参数：APT4585BN-GULLWING参数

APT4585CN

TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 8A I(D) | TO-254ISO

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11 ETC

APT4585DN

TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | CHIP

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12 ETC

APT4585DN

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 ADPOW

APT4585GN

TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 7A I(D) | TO-257ISO

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12 ETC

APT45G100BN

TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 45A I(C) | TO-247AD

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22 ETC

APT45GF60BN

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-247

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39 ETC

APT45GF60BN

45A, 600V, N-CHANNEL IGBT, TO-247

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0 MICROSEMI

APT45GF60BNU1

45A, 600V, N-CHANNEL IGBT, TO-247

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0 MICROSEMI

APT45GL100BN

TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 45A I(C) | TO-247

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42 ETC

APT45GL100BN

Insulated Gate Bipolar Transistor, 45A I(C), 1000V V(BR)CES, N-Channel, TO-247

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0 ADPOW

APT45GL100BN

45A, 1000V, N-CHANNEL IGBT, TO-247

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0 MICROSEMI

APT45GP120B

POWER MOS 7 IGBT

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58 ADPOW

APT45GP120B

POWER MOS 7 IGBT

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45 ADPOW

APT45GP120B2D2

54A, 1200V, N-CHANNEL IGBT, TMAX-3

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0 MICROSEMI

APT45GP120B2DF2

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, B2, TMAX-3

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0 ADPOW

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