APT5014LVFR [ADPOW]
POWER MOS V FREDFET; 功率MOS V FREDFET
| 型号： | APT5014LVFR |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | POWER MOS V FREDFET |
| 文件： | 总4页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT5014B2VFR
APT5014LVFR
500V 37A 0.140Ω
POWER MOS V® FREDFET
B2VFR
T-MAX™
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
TO-264
LVFR
• T-MAX™ or TO-264 Package
• Avalanche Energy Rated
D
S
FAST RECOVERY BODY DIODE
•
• Faster Switching
• Lower Leakage
G
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT5014B2VFR_LVFR
UNIT
VDSS
ID
Drain-Source Voltage
500
37
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
148
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
450
Watts
W/°C
PD
3.6
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
-55 to 150
300
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
37
1
EAR
EAS
35
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
1600
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
500
37
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, ID = 18.5A)
Ohms
µA
0.14
250
1000
±100
4
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
IDSS
IGSS
nA
VGS(th)
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT5014B2VFR_LVFR
Test Conditions
GS = 0V
DS = 25V
MIN
MIN
MIN
TYP
5600
737
330
234
36
MAX
6720
1030
500
350
54
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
V
Output Capacitance
pF
V
f = 1 MHz
Reverse Transfer Capacitance
3
VGS = 10V
Total Gate Charge
VDD = 0.5 VDSS
Qgs
Qgd
td(on)
tr
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
ID = ID [Cont.] @ 25°C
115
12
170
24
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.6Ω
15
30
td(off)
tf
Turn-off Delay Time
Fall Time
45
70
7
14
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
TYP
MAX
37
UNIT
Continuous Source Current (Body Diode)
IS
Amps
1
ISM
VSD
Pulsed Source Current (Body Diode)
148
1.3
15
2
Diode Forward Voltage
Peak Diode Recovery dv
Reverse Recovery Time
(VGS = 0V, IS = -ID [Cont.])
Volts
V/ns
5
dv
/
/
dt
dt
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
250
525
ns
µC
trr
(IS = -ID [Cont.], di
Reverse Recovery Charge
(IS = -ID [Cont.], di
dt = 100A/µs)
Peak Recovery Current
(IS = -ID [Cont.], di
dt = 100A/µs)
/dt = 100A/µs)
1.6
6.0
14
Qrr
/
IRRM
Amps
/
24
THERMAL CHARACTERISTICS
Symbol Characteristic
TYP
MAX
0.28
40
UNIT
Junction to Case
RθJC
RθJA
°C/W
Junction to Ambient
1
2
3
4
5
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
See MIL-STD-750 Method 3471
Starting T = +25°C, L = 2.34mH, R = 25Ω, Peak I = 37A
j
G
L
dv
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ I -37A
/
≤ 700A/µs
V
R ≤ 500V T ≤ 150°C
dt
S
D
J
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3
D=0.5
0.1
0.05
0.2
0.1
0.05
Note:
0.01
0.02
t
1
0.01
0.005
t
2
t
1
Duty Factor D =
Peak T = P x Z
/
t
SINGLE PULSE
10-4
2
+ T
J
DM θJC
C
0.001
10-5
10-3
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-2
10-1
1.0
10
APT5014B2VFR_LVFR
100
80
60
40
20
0
100
80
60
40
20
0
7V
V
=7V, 10V & 15V
GS
6.5V
6V
6.5V
V
=10V & 15V
GS
6V
5.5V
5.5V
5V
5V
4.5V
4.5V
0
V
50
100
150
200
250
0
V
2
4
6
8
10
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
12
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
80
1.6
NORMALIZED TO
T
= -55°C
J
V
= 10V @ 0.5 I [Cont.]
GS
D
1.5
1.4
1.3
1.2
1.1
1.0
0.9
V
> I (ON) x
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
(ON)MAX.
DS
D
DS
60
40
20
0
V
=10V
GS
V
=20V
GS
T
= +125°C
= +25°C
J
T
J
T
= -55°C
6
J
0
V
2
4
8
0
20
40
60
80
100
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R (ON) vs DRAIN CURRENT
DS
1.15
1.10
1.05
1.00
0.95
0.90
0.85
40
32
24
16
8
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100 125 150
T , CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.5
I
= 0.5 I [Cont.]
D
D
V
= 10V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT5014B2VFR_LVFR
200
100
50
20,000
10,000
5,000
10µS
OPERATION HERE
LIMITED BY R (ON)
100µS
DS
C
iss
1mS
10
5
C
oss
10mS
1,000
500
100mS
DC
1
T
T
=+25°C
=+150°C
C
C
J
rss
.5
SINGLE PULSE
.1
100
1
V
5
10
50 100
500
.01
V
.1
1
10
50
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
100
20
16
12
8
I
= I [Cont.]
D
D
50
V
=100V
DS
=250V
V
DS
T
=+150°C
T =+25°C
J
J
10
5
V
=400V
DS
1
0.5
4
0.1
0
0
100
g
200
300
400
500
0.2
V
0.4
0.6
0.8
1.0
1.2
1.4
Q , TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
T-MAXTM (B2) Package Outline (B2VFR)
TO-264 (L) Package Outline (LVFR)
4.69 (.185)
4.60 (.181)
5.31 (.209)
15.49 (.610)
16.26 (.640)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
Gate
Drain
Source
1.01 (.040)
1.40 (.055)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.21 (.087)
2.59 (.102)
2.79 (.110)
5.45 (.215) BSC
2-Plcs.
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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