APT5016BLL [ADPOW]

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS; 功率MOS 7TM是新一代低损耗,高电压,N沟道增强型功率MOSFET
APT5016BLL
元器件型号: APT5016BLL
生产厂家: ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述和应用:

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
功率MOS 7TM是新一代低损耗,高电压,N沟道增强型功率MOSFET

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PDF文件: 总2页 (文件大小:65K)
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型号参数:APT5016BLL参数

APT5016BLL_03

POWER MOS 7 MOSFET

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10 ADPOW

APT5016BLLG

Power Field-Effect Transistor, 30A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

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0 MICROSEMI

APT5016SFLL

POWER MOS 7 FREDFET

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18 ADPOW

APT5016SFLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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10 ADPOW

APT5016SFLL

POWER MOS 7 R FREDFET

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6 MICROSEMI

APT5016SFLL

Power Field-Effect Transistor, 30A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3

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0 ADPOW

APT5016SFLLG

Power Field-Effect Transistor, 30A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3

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0 MICROSEMI

APT5016SLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

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9 ADPOW

APT5016SLL

POWER MOS 7 MOSFET

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20 ADPOW

APT5016SLL

Power Field-Effect Transistor, 30A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3

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0 ADPOW

APT5016SLLG

Power Field-Effect Transistor, 30A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3

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0 MICROSEMI

APT5017

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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24 ADPOW

APT5017

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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25 ADPOW

APT5017BFLC

Power Field-Effect Transistor, 30A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN

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0 ADPOW

APT5017BLC

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

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33 ADPOW