APT5018BLL [ADPOW]

POWER MOS 7 MOSFET; 功率MOS 7 MOSFET

APT5018BLL


型号：	APT5018BLL
厂家：	ADVANCED POWER TECHNOLOGY
描述：	POWER MOS 7 MOSFET 功率MOS 7 MOSFET 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总5页 (文件大小：97K)
下载：	下载PDF数据表文档文件

APT5018BLL_03

POWER MOS 7 MOSFET

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13 ADPOW

APT5018BLLG

Power Field-Effect Transistor, 27A I(D), 500V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN

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0 MICROSEMI

APT5018SFLL

POWER MOS 7 FREDFET

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9 ADPOW

APT5018SFLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

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19 ADPOW

APT5018SLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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10 ADPOW

APT5018SLL

POWER MOS 7 MOSFET

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20 ADPOW

APT5018SLLG

Power Field-Effect Transistor, 27A I(D), 500V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D3PAK-3/2

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0 MICROSEMI

APT5019HVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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17 ADPOW

APT501R1AN

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7.5A I(D) | TO-3

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12 ETC

APT501R1BN

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 9A I(D) | TO-247AD

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11 ETC

APT501R1BN-BUTT

Power Field-Effect Transistor, 9A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

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0 ADPOW

APT501R1BN-GULLWING

Power Field-Effect Transistor, 9A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

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0 ADPOW

APT501R1BNR

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 9.5A I(D) | TO-247AD

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7 ETC

APT501R1CN

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7A I(D) | TO-254ISO

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9 ETC

APT501R1GN

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 6.5A I(D) | TO-257ISO

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9 ETC

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