APT5022BN [ADPOW]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS; N沟道增强型高压功率MOSFET型号: | APT5022BN |
厂家: | ADVANCED POWER TECHNOLOGY |
描述: | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
文件: | 总4页 (文件大小:55K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
D
S
TO-247
G
APT5020BN 500V 28.0A 0.20Ω
APT5022BN 500V 27.0A 0.22Ω
POWER MOS IV®
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
APT
APT
Symbol Parameter
5020BN
5022BN
UNIT
VDSS
500
28
500
27
Volts
Drain-Source Voltage
ID
Continuous Drain Current @ TC = 25°C
Amps
1
IDM
VGS
112
108
Pulsed Drain Current
Gate-Source Voltage
±30
360
2.9
Volts
Watts
W/°C
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
PD
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
-55 to 150
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions / Part Number
Symbol
MIN
500
500
28
TYP
MAX
UNIT
APT5020BN
APT5022BN
APT5020BN
APT5022BN
APT5020BN
APT5022BN
Drain-Source Breakdown Voltage
BVDSS
Volts
(VGS = 0V, ID = 250 µA)
2
On State Drain Current
ID(ON)
Amps
Ohms
µA
(VDS > ID(ON) x RDS(ON) Max, VGS = 10V)
27
2
0.20
0.22
250
1000
±100
4
Drain-Source On-State Resistance
RDS(ON)
(VGS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
IGSS
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
nA
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
THERMAL CHARACTERISTICS
2
Volts
Symbol Characteristic
MIN
TYP
MAX
0.34
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT5020/5022BN
Test Conditions
GS = 0V
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
2890
590
230
140
18
3500
830
350
210
27
V
Output Capacitance
VDS = 25V
f = 1 MHz
pF
Reverse Transfer Capacitance
3
VGS = 10V
Total Gate Charge
Qgs
Qgd
VDD = 0.5 VDSS
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
ID = ID [Cont.] @ 25°C
75
110
38
td(on)
tr
VGS = 15V
19
VDD = 0.5 VDSS
43
86
ID = ID [Cont.] @ 25°C
td(off)
tf
Turn-off Delay Time
Fall Time
85
125
112
R
G = 1.8Ω
56
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
MIN
TYP
MAX
28
UNIT
APT5020BN
APT5022BN
APT5020BN
APT5022BN
Continuous Source Current
IS
(Body Diode)
27
Amps
1
112
108
1.3
860
14
Pulsed Source Current
(Body Diode)
ISM
2
VSD
t rr
Diode Forward Voltage
(VGS = 0V, IS = -ID [Cont.])
Volts
ns
Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)
215
3
430
7
Q rr
µC
SAFE OPERATING AREA CHARACTERISTICS
Symbol Characteristic
Test Conditions / Part Number
DS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec.
MIN
TYP
MAX
UNIT
V
SOA1
SOA2
Safe Operating Area
360
360
112
108
Watts
IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.
Safe Operating Area
APT5020BN
APT5022BN
ILM
Inductive Current Clamped
Amps
1
2
3
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.5
D=0.5
0.1
0.2
0.05
0.1
0.05
Note:
0.02
0.01
0.01
t
1
0.005
t
2
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
SINGLE PULSE
J
DM
θJC
C
0.001
-5
-4
-3
-2
-1
10
10
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
10
1.0
10
APT5020/5022BN
20
16
12
8
20
16
V
=6.5, 7, 8, &10V
GS
V
=10V
8V
GS
6.5V
6V
7V
6V
12
8
5.5V
5.5V
5V
5V
4
0
4
4.5V
4.5V
0
0
V
50
100
150
200
250
0
V
1
2
3
4
5
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
40
2.50
2.00
1.50
1.00
T
= 25°C
J
T
= -55°C
T
= +25°C
J
J
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
> I (ON) x
R
(ON)MAX.
T
= +125°C
DS
D
DS
J
32
24
16
8
250µSEC. PULSE TEST
V
= 10V
@
0.5
I
[Cont.]
D
@ <0.5 % DUTY CYCLE
GS
V
=10V
GS
V
=20V
GS
T
= +125°C
= +25°C
J
T
= -55°C
J
T
J
0
0.50
1.2
0
V
2
4
6
8
10
0
10
20
30
40
50
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R (ON) vs DRAIN CURRENT
DS
28
24
APT5020BN
1.1
1.0
20
APT5022BN
16
12
8
0.9
0.8
0.7
4
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100 125 150
T , CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
1.4
I
= 0.5 I [Cont.]
D
D
V
= 10V
GS
1.2
1.0
0.8
0.6
0.4
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT5020/5022BN
10,000
5,000
200
100
APT5020BN
APT5022BN
10µS
OPERATION HERE
LIMITED BY R
APT5020BN
APT5022BN
(ON)
DS
C
iss
100µS
10
1
1mS
1,000
500
10mS
100mS
DC
C
C
oss
T
T
=+25°C
=+150°C
C
J
rss
SINGLE PULSE
.1
100
1
V
5
10
50 100
500 1000
0
V
10
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
20
30
40
50
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
20
I
= I [Cont.]
D
D
100
50
V
=100V
DS
=250V
16
12
8
V
DS
T
=+150°C
T
=+25°C
J
J
20
10
5
V
=400V
DS
4
2
1
0
0
40
g
80
120
160
200
0
V
0.5
1.0
1.5
2.0
2.5
3.0
Q , TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-247AD Package Outline
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
3.55 (.140)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Gate
1.01 (.040)
1.40 (.055)
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
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