APT5518BFLL [ADPOW]
POWER MOS 7 FREDFET; 功率MOS 7 FREDFET
| 型号： | APT5518BFLL |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | POWER MOS 7 FREDFET |
| 文件： | 总5页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT5518BFLL
APT5518SFLL
550V 31A 0.180Ω
BFLL
R
POWER MOS 7 FREDFET
D3PAK
TO-247
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
SFLL
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• IncreasedPowerDissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
D
S
G
•
FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT5518
550
UNIT
VDSS
ID
Drain-Source Voltage
Volts
Continuous Drain Current @ TC = 25°C
31
Amps
Volts
1
IDM
Pulsed Drain Current
124
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Watts
W/°C
403
PD
3.23
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
31
1
EAR
EAS
30
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
550
31
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 15.5A)
Ohms
µA
0.180
250
Zero Gate Voltage Drain Current (VDS = 550V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 440V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
IDSS
1000
±100
5
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT5518 BFLL - SFLL
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Coss
Crss
Qg
MIN
TYP
MAX
Characteristic
UNIT
TestConditions
V
= 0V
Input Capacitance
3286
625
31
GS
V
= 25V
pF
Output Capacitance
DS
f = 1 MHz
Reverse Transfer Capacitance
3
V
= 10V
Total Gate Charge
67
GS
V
= 275V
Qgs
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
DD
26
I
= 31A @ 25°C
D
Qgd
34
RESISTIVESWITCHING
td(on)
tr
15
V
= 15V
GS
11
V
= 275V
DD
td(off)
37
Turn-off Delay Time
Fall Time
I
= 31A @ 25°C
D
tf
R
= 0.6Ω
11
G
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
339
190
585
227
Turn-on Switching Energy
V
= 367V, V = 15V
GS
DD
I
Turn-off Switching Energy
= 31A, R = 5Ω
D
G
µJ
INDUCTIVESWITCHING@125°C
6
Eon
Eoff
Turn-on Switching Energy
V
= 367V V = 15V
GS
DD
Turn-off Switching Energy
I
= 31A, R = 5Ω
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
31
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
VSD
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
124
1.3
15
2
Volts
V/ns
(VGS = 0V, IS = -31A)
dv
/
dv
5
Peak Diode Recovery
/
dt
dt
Reverse Recovery Time
(IS = -31A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
250
400
trr
ns
µC
Reverse Recovery Charge
(IS = -31A, di/dt = 100A/µs)
1.9
6
Qrr
Peak Recovery Current
(IS = -31A, di/dt = 100A/µs)
15
26
IRRM
Amps
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.31
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
4 Starting T = +25°C, L = 2.71mH, R = 25Ω, Peak I = 31A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
device itself.
I
≤ -I 31A
/
≤ 700A/µs
V
R ≤ V
T ≤ 150°C
J
dt
S
D
DSS
6
Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.35
0.30
0.9
0.25
0.7
0.20
Note:
0.5
0.15
t
1
0.3
0.10
t
2
t
1
Duty Factor D =
/
t
2
0.05
0
0.1
Peak T = P
x Z + T
J
DM
θJC C
0.05
SINGLEPULSE
10-3
10-5
10-4
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Typical Performance Curves
APT5518 BFLL - SFLL
100
80
60
40
20
0
V
=15 & 10V
GS
RC MODEL
Junction
temp. ( ”C)
7.5V
7V
0.119
0.0135F
0.319F
Power
(Watts)
6.5V
6V
0.191
Case temperature
5.5V
5V
0
5
10
15
20
25
30
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
100
1.40
NORMALIZED TO
V
> I (ON) x
R
(ON)MAX.
DS
DS
D
V
= 10V
@
15.5A
250µSEC. PULSE TEST
GS
@ <0.5 % DUTY CYCLE
1.30
1.20
1.10
1.00
80
60
40
V
=10V
GS
T
= +125°C
= +25°C
V
=20V
J
GS
T
20
0
J
0.90
0.80
T
= -55°C
J
0
2
4
6
8
10
0
10
20
30
40
50
60
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
35
30
25
20
15
10
05
0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
2.5
1.2
I
= 15.5A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
2.0
1.5
1.0
0.5
0.0
0.7
0.6
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
APT5518 BFLL - SFLL
126
50
10,000
1,000
100
OPERATIONHERE
LIMITEDBYR (ON)
DS
C
iss
100µS
C
oss
10
1mS
T
=+25°C
C
J
C
rss
T =+150°C
SINGLEPULSE
10mS
1
10
1
10
100
550
0
10
20
30
40
50
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
16
200
I
= 31A
D
100
V
=110V
12
DS
T =+150°C
J
V
=275V
T =+25°C
J
DS
V
=440V
DS
8
10
4
0
1
0
20
g
40
60
80
100
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
Q ,TOTALGATECHARGE(nC)
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
SD
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
60
60
V
= 367V
DD
= 5Ω
R
T
G
50
40
30
20
50
40
30
20
t
d(off)
= 125°C
J
t
f
L = 100µH
V
= 367V
DD
= 5Ω
R
T
G
= 125°C
J
L = 100µH
t
d(on)
t
10
0
10
0
r
0
10
20
30
40
50
0
10
20
30
40
50
I
(A)
I (A)
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1000
800
600
400
1000
V
= 367V
DD
= 5Ω
R
T
G
E
= 125°C
on
800
600
400
J
L = 100µH
E
on
EON includes
diode reverse recovery.
V
I
= 367V
DD
= 31A
E
off
D
T
= 125°C
J
200
0
200
0
L = 100µH
EON includes
E
diode reverse recovery.
off
0
10
20
30
40
50
0
5
10 15 20 25 30 35 40 45 50
R ,GATERESISTANCE(Ohms)
I
(A)
D
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT5518 BFLL - SFLL
Gate Voltage
10 %
90%
t
Gate Voltage
Drain Voltage
Drain Current
T
= 125 C
T
= 125 C
J
J
d(off)
t
d(on)
t
t
f
r
Drain Current
Drain Voltage
90%
90%
5 %
5 %
10%
0
10 %
Switching Energy
Switching Energy
Figure19,Turn-offSwitchingWaveformsandDefinitions
Figure18,Turn-onSwitchingWaveformsandDefinitions
APT30DF60B
VCE
IC
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
D3PAKPackageOutline
TO-247 Package Outline
4.98 (.196)
4.69 (.185)
15.95 (.628)
16.05 (.632)
13.41 (.528)
13.51 (.532)
5.31 (.209)
5.08 (.200)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15 (.045)
1.49 (.059)
2.49 (.098)
1.47 (.058)
1.57 (.062)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99 (.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.}
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
相关型号：
APT5518BFLLG
Power Field-Effect Transistor, 31A I(D), 550V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
MICROSEMI
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