APT6015EN [ADPOW]

Transistor;
APT6015EN
型号: APT6015EN
厂家: ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述:

Transistor

文件: 总2页 (文件大小:140K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

APT6015JFVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW

APT6015JN

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
ADPOW

APT6015JVFR

POWER MOS V FREDFET
ADPOW

APT6015JVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW

APT6015LVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW

APT6015LVFRG

Power Field-Effect Transistor, 38A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
MICROSEMI

APT6015LVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW

APT6015LVRG

Power Field-Effect Transistor, 38A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
MICROSEMI

APT6017AFN

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 600V V(BR)DSS | 39A I(D)
ETC

APT6017B2FLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
ADPOW

APT6017B2FLLG

Power Field-Effect Transistor, 35A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
MICROSEMI

APT6017B2FLL_04

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
ADPOW