APT6040BNR-BUTT [ADPOW]

Power Field-Effect Transistor, 18A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247;
APT6040BNR-BUTT
型号: APT6040BNR-BUTT
厂家: ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述:

Power Field-Effect Transistor, 18A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

高压 高电压电源
文件: 总4页 (文件大小:54K)
中文:  中文翻译
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D
S
TO-247  
G
APT6040BN 600V 18.0A 0.40  
APT6045BN 600V 17.0A 0.45Ω  
POWER MOS IV®  
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS  
MAXIMUM RATINGS  
All Ratings: T = 25°C unless otherwise specified.  
C
APT  
APT  
Symbol Parameter  
6040BN  
6045BN  
UNIT  
VDSS  
600  
18  
600  
17  
Volts  
Drain-Source Voltage  
ID  
Continuous Drain Current @ TC = 25°C  
Amps  
1
IDM  
VGS  
72  
68  
Pulsed Drain Current  
Gate-Source Voltage  
±30  
310  
2.48  
Volts  
Watts  
W/°C  
Total Power Dissipation @ TC = 25°C  
Linear Derating Factor  
PD  
TJ,TSTG  
TL  
Operating and Storage Junction Temperature Range  
Lead Temperature: 0.063" from Case for 10 Sec.  
-55 to 150  
300  
°C  
STATIC ELECTRICAL CHARACTERISTICS  
Characteristic / Test Conditions / Part Number  
Symbol  
MIN  
600  
600  
18  
TYP  
MAX  
UNIT  
APT6040BN  
APT6045BN  
APT6040BN  
APT6045BN  
APT6040BN  
APT6045BN  
Drain-Source Breakdown Voltage  
BVDSS  
Volts  
(VGS = 0V, ID = 250 µA)  
2
On State Drain Current  
ID(ON)  
Amps  
Ohms  
µA  
(VDS > ID(ON) x RDS(ON) Max, VGS = 10V)  
17  
2
0.40  
0.45  
250  
1000  
±100  
4
Drain-Source On-State Resistance  
RDS(ON)  
(VGS = 10V, 0.5 ID [Cont.])  
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)  
IDSS  
IGSS  
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)  
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)  
nA  
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)  
THERMAL CHARACTERISTICS  
2
Volts  
Symbol Characteristic  
MIN  
TYP  
MAX  
0.40  
40  
UNIT  
RθJC  
RθJA  
Junction to Case  
°C/W  
Junction to Ambient  
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
USA  
405 S.W. Columbia Street  
EUROPE  
Bend, Oregon 97702-1035  
F-33700 Merignac - France  
Phone: (541) 382-8028  
Phone: (33) 5 57 92 15 15  
FAX: (541) 388-0364  
FAX: (33) 5 56 47 97 61  
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord  
DYNAMIC CHARACTERISTICS  
Symbol Characteristic  
APT6040/6045BN  
Test Conditions  
GS = 0V  
MIN  
TYP  
MAX  
UNIT  
Ciss  
Coss  
Crss  
Qg  
Input Capacitance  
2400  
436  
154  
87  
2950  
610  
230  
130  
16  
V
Output Capacitance  
VDS = 25V  
f = 1 MHz  
pF  
Reverse Transfer Capacitance  
3
VGS = 10V  
Total Gate Charge  
Qgs  
Qgd  
VDD = 0.5 VDSS  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time  
Rise Time  
nC  
ns  
11  
ID = ID [Cont.] @ 25°C  
46  
69  
td(on)  
tr  
VGS = 15V  
14  
28  
VDD = 0.5 VDSS  
23  
46  
ID = ID [Cont.] @ 25°C  
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
63  
95  
R
G = 1.8Ω  
23  
46  
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS  
Symbol Characteristic / Test Conditions / Part Number  
MIN  
TYP  
MAX  
18  
UNIT  
APT6040BN  
APT6045BN  
APT6040BN  
APT6045BN  
Continuous Source Current  
IS  
(Body Diode)  
17  
Amps  
1
72  
Pulsed Source Current  
(Body Diode)  
ISM  
68  
2
VSD  
t rr  
Diode Forward Voltage  
(VGS = 0V, IS = -ID [Cont.])  
Volts  
ns  
1.3  
668  
10  
Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs)  
Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)  
334  
5
Q rr  
µC  
SAFE OPERATING AREA CHARACTERISTICS  
Symbol Characteristic  
Test Conditions / Part Number  
DS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec.  
MIN  
TYP  
MAX  
UNIT  
V
SOA1  
SOA2  
Safe Operating Area  
310  
310  
72  
Watts  
IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.  
Safe Operating Area  
APT6040BN  
APT6045BN  
ILM  
Inductive Current Clamped  
Amps  
68  
1
2
3
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)  
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%  
See MIL-STD-750 Method 3471  
APT Reserves the right to change, without notice, the specifications and information contained herein.  
1.0  
0.5  
D=0.5  
0.2  
0.1  
0.1  
0.05  
0.05  
Note:  
0.02  
0.01  
t
0.01  
1
0.005  
t
2
t
SINGLE PULSE  
1
Duty Factor D =  
Peak T = P x Z  
/
t
2
+ T  
J
DM  
θJC  
C
0.001  
-5  
-4  
-3  
-2  
-1  
10  
10  
10  
RECTANGULAR PULSE DURATION (SECONDS)  
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION  
10  
10  
1.0  
10  
APT6040/6045BN  
20  
10  
8
V
=10V  
GS  
16  
12  
8
V
=6V  
5.5V  
5V  
GS  
6V  
6
4
5.5V  
5V  
4
4.5V  
4V  
2
0
4.5V  
4V  
150  
0
0
V
50  
100  
200  
2 5 0  
0
V
1
2
3
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
DS  
4
5
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
DS  
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS  
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS  
20  
2.5  
T
= 25°C  
T
= -55°C  
J
T
T
= +25°C  
J
2µ SEC. PULSE TEST  
J
NORMALIZED TO  
= +125°C  
V
= 10V @ 0.5 I [Cont.]  
D
V
> I (ON) x R  
(ON)MAX.  
230µ SEC. PULSE TEST  
J
GS  
V
=10V  
GS  
DS DS  
D
2.0  
1.5  
1.0  
15  
10  
V
=20V  
GS  
5
0
T
T
= +125°C  
= +25°C  
J
T
= -55°C  
J
J
0.5  
0
V
2
4
6
8
0
10  
20  
30  
40  
50  
, GATE-TO-SOURCE VOLTAGE (VOLTS)  
I , DRAIN CURRENT (AMPERES)  
GS  
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS  
FIGURE 5, R (ON) vs DRAIN CURRENT  
DS  
1.2  
1.1  
1.0  
20  
16  
APT6040BN  
12  
APT6045BN  
8
4
0
0.9  
0.8  
0.7  
25  
50  
75  
100  
125  
150  
-50 -25  
0
25 50 75 100 125 150  
T , CASE TEMPERATURE (°C)  
T , JUNCTION TEMPERATURE (°C)  
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE  
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE  
1.4  
2.5  
I
= 0.5 I [Cont.]  
D
D
V
= 10V  
GS  
1.2  
1.0  
0.8  
0.6  
0.4  
2.0  
1.5  
1.0  
0.5  
0.0  
-50 -25  
0
25 50 75 100 125 150  
-50 -25  
0
25 50 75 100 125 150  
T , JUNCTION TEMPERATURE (°C)  
T , CASE TEMPERATURE (°C)  
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE  
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE  
APT6040/6045BN  
100  
10  
1
APT6040BN  
APT6045BN  
10µS  
OPERATION HERE  
C
LIMITED BY R (ON)  
iss  
DS  
100µS  
APT6040BN  
APT6045BN  
C
1mS  
oss  
10mS  
100mS  
DC  
C
rss  
T
T
=+25°C  
=+150°C  
C
J
SINGLE PULSE  
.1  
1
V
5
10  
50 100  
600  
0
V
10  
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
DS  
20  
30  
40  
50  
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
DS  
FIGURE 10, MAXIMUM SAFE OPERATING AREA  
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE  
20  
16  
12  
8
I
= I [Cont.]  
D
D
V
=120V  
DS  
V
=320V  
DS  
V
=480V  
DS  
T
= +150°C  
T
= +25°C  
J
J
4
0
0
40  
g
80  
120  
1 6 0  
200  
0
V
.5  
1.0  
1.5  
2.0  
Q , TOTAL GATE CHARGE (nC)  
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)  
SD  
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE  
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE  
TO-247AD Package Outline  
4.69 (.185)  
5.31 (.209)  
15.49 (.610)  
16.26 (.640)  
1.49 (.059)  
2.49 (.098)  
5.38 (.212)  
6.20 (.244)  
6.15 (.242) BSC  
20.80 (.819)  
21.46 (.845)  
3.55 (.140)  
3.81 (.150)  
2.87 (.113)  
3.12 (.123)  
4.50 (.177) Max.  
1.65 (.065)  
2.13 (.084)  
0.40 (.016)  
0.79 (.031)  
19.81 (.780)  
20.32 (.800)  
Gate  
1.01 (.040)  
1.40 (.055)  
Drain  
Source  
2.21 (.087)  
2.59 (.102)  
5.45 (.215) BSC  
2-Plcs.  
Dimensions in Millimeters and (Inches)  

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