APT6060BN [ADPOW]

Power Field-Effect Transistor, 13A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN;
APT6060BN
型号: APT6060BN
厂家: ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述:

Power Field-Effect Transistor, 13A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN

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文件: 总4页 (文件大小:178K)
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APT6060BN-BUTT

Power Field-Effect Transistor, 13A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

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0 ADPOW

APT6060BNR

TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 13A I(D) | TO-247AD

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15 ETC

APT6060BNR-BUTT

13 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

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2 MICROSEMI

APT6060BNR-GULLWING

Power Field-Effect Transistor, 13A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

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0 MICROSEMI

APT6060CN

TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10.5A I(D) | TO-254ISO

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22 ETC

APT6060DN

TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | CHIP

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30 ETC

APT-6065

Wide Band Medium Power Amplifier, 2000MHz Min, 6000MHz Max,

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0 AGILENT

APT-6065R

Wide Band Medium Power Amplifier, 2000MHz Min, 6000MHz Max,

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0 AGILENT

APT6070AN

TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10.5A I(D) | TO-3

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13 ETC

APT6070AN

N-CHANNEL ENHANCEMENT-MODE HIGH VOLTAGE POWER MOSFETS

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17 ADPOW

APT6070AN

Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3

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0 ADPOW

APT6070BN

TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 12A I(D) | TO-247AD

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14 ETC

APT6070BN

Power Field-Effect Transistor, 12A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN

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0 ADPOW

APT6070BN-BUTT

12 A, 600 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

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0 MICROSEMI

APT6070BN-GULLWING

12 A, 600 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN

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0 MICROSEMI