APT75GN120LG [ADPOW]
IGBT; IGBT
| 型号： | APT75GN120LG |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | IGBT |
| 文件： | 总6页 (文件大小：404K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1200V
APT75GN120L
APT75GN120B2
APT75GN120B2G* APT75GN120LG*
®
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
(B2)
T-Max®
TO-264
(L)
• 1200V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• Intergrated Gate Resistor: Low EMI, High Reliability
C
E
G
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Parameter
Symbol
APT75GN120B2_L(G)
UNIT
VCES
Collector-Emitter Voltage
Gate-Emitter Voltage
1200
Volts
VGE
IC1
±30
200
99
8
Continuous Collector Current
@ TC = 25°C
IC2
Continuous Collector Current @ TC = 110°C
Amps
1
ICM
Pulsed Collector Current
@ TC = 150°C
225
Switching Safe Operating Area @ TJ = 150°C
225A @ 1200V
833
SSOA
PD
Total Power Dissipation
Watts
°C
TJ,TSTG
Operating and Storage Junction Temperature Range
-55 to 150
300
TL
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
1200
5.0
TYP
MAX
Units
V(BR)CES
VGE(TH)
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 3mA)
Gate Threshold Voltage (VCE = VGE, IC = 3mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 75A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 75A, Tj = 125°C)
5.8
1.7
2.0
6.5
2.1
Volts
1.4
VCE(ON)
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
100
ICES
µA
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
TBD
600
IGES
nA
RG(int)
Ω
10
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT75GN120B2_L(G)
DYNAMIC CHARACTERISTICS
Test Conditions
Capacitance
Characteristic
Symbol
Cies
MIN
TYP
4800
275
210
9.0
MAX
UNIT
Input Capacitance
Coes
Cres
Output Capacitance
pF
VGE = 0V, VCE = 25V
f = 1 MHz
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
VGEP
Qg
V
Gate Charge
VGE = 15V
VCE = 600V
IC = 75A
3
425
30
Total Gate Charge
Qge
Gate-Emitter Charge
nC
Qgc
Gate-Collector ("Miller") Charge
245
TJ = 150°C, RG = 4.3Ω 7, VGE
=
225
SSOA
Switching Safe Operating Area
A
15V, L = 100µH,VCE = 1200V
td(on)
tr
td(off)
tf
Inductive Switching (25°C)
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
60
41
VCC = 800V
VGE = 15V
IC = 75A
ns
620
110
8045
9620
7640
60
RG = 1.0Ω 7
4
Eon1
Eon2
Eoff
td(on)
tr
Turn-on Switching Energy
TJ = +25°C
5
µJ
ns
Turn-on Switching Energy (Diode)
6
Turn-off Switching Energy
Inductive Switching (125°C)
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
VCC = 800V
VGE = 15V
IC = 75A
41
td(off)
tf
725
200
Current Fall Time
RG = 1.0Ω 7
4 4
Eon1
Eon2
Eoff
8620
13000
11400
Turn-on Switching Energy
TJ = +125°C
55
µJ
Turn-on Switching Energy (Diode)
66
Turn-off Switching Energy
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
UNIT
MIN
TYP
MAX
.15
R
Junction to Case (IGBT)
θJC
°C/W
gm
R
Junction to Case (DIODE)
N/A
θJC
WT
Package Weight
5.9
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction temperature.
For Combi devices, Ices includes both IGBT and FRED leakages
See MIL-STD-750 Method 3471.
Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5
Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6
7
Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
8
Current limited by lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
APT75GN120B2_L(G)
160
140
120
100
80
160
13 &15V
V
= 15V
GE
12V
140
120
100
80
TJ = -55°C
11V
TJ = 25°C
TJ = 125°C
10V
60
60
9V
40
40
8V
20
20
0
7V
0
0
0.5 1.0
1.5 2.0
2.5 3.0
3.5
0
2
4
6
8
10 12 14 16
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE
CE
FIGURE 1, Output Characteristics(T = 25°C)
FIGURE 2, Output Characteristics (T = 125°C)
J
J
160
16
14
12
250µs PULSE
TEST<0.5 % DUTY
CYCLE
I
T
= 75A
= 25°C
C
J
140
120
100
80
V
= 240V
CE
V
= 600V
CE
10
8
TJ = -55°C
V
= 960V
TJ = 25°C
TJ = 125°C
CE
6
60
4
40
2
20
0
0
0
2
4
6
8
10
12
14
0
100
200
300
400
500
V
, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
GE
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
3.5
3.0
2.5
2.0
1.5
1.0
3.5
3.0
2.5
2.0
1.5
1.0
T
J = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
= 150A
C
I
= 150A
C
I
= 75A
C
I
= 75A
C
I
= 37.5A
I
= 37.5A
C
C
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0.5
0
0.5
0
8
10
12
14
16
-50 -25
0
25 50 75 100 125 150
V
, GATE-TO-EMITTER VOLTAGE (V)
T , Junction Temperature (°C)
GE
J
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
1.15
300
1.10
1.05
1.00
0.95
0.90
0.85
0.80
250
200
150
100
LeadTemperature
50
Limited
0.75
0.70
0
-50 -25
-50 -25
0
25 50 75 100 125 150
0
25 50 75 100 125 150
T , CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
J
C
FIGURE 7, Threshold Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
APT75GN120B2_L(G)
800
700
600
500
400
300
200
100
70
60
50
40
30
20
10
V
= 15V
GE
VGE =15V,TJ=125°C
VGE =15V,TJ=25°C
VCE = 800V
VCE = 800V
RG = 1.0Ω
L = 100µH
TJ = 25°C, or =125°C
RG = 1.0Ω
L = 100µH
0
I
0
I
10
40
70
100
130
160
10
40
70
100
130
160
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
180
300
R
G = 1.0Ω, L = 100µH, VCE = 800V
R
G = 1.0Ω, L = 100 H, VCE = 800V
µ
160
140
120
100
80
250
200
150
100
50
TJ = 25 or 125°C,VGE = 15V
T
J = 125°C, VGE = 15V
60
T
J = 25°C, VGE = 15V
40
20
0
I
0
I
10
40
70
100
130
160
10
40
70
100
130
160
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
50000
40000
30000
20000
10000
0
25000
20000
15000
10000
V
V
R
=
=
800V
+15V
V
V
R
=
=
800V
+15V
CE
GE
CE
GE
= 1.0Ω
= 1.0Ω
G
G
T
J = 125°C
TJ = 125°C
T
J = 25°C
5000
0
T
J = 25°C
10
40
70
100
130
160
10
40
70
100
130
160
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
50000
100000
80000
60000
40000
20000
0
V
V
T
=
=
800V
+15V
V
V
R
=
=
800V
+15V
CE
GE
CE
GE
E
150A
E
150A
on2,
on2,
= 125°C
= 1.0Ω
J
G
40000
30000
20000
E
150A
75A
off,
E
150A
off,
E
75A
on2,
E
10000
0
E
75A
E
75A
off,
on2,
E
off,
E
37.5A
E
37.5A
off,
on2,
E
37.5A
off,
37.5A
on2,
0
10
20
30
40
50
0
25
50
75
100
125
R , GATE RESISTANCE (OHMS)
T , JUNCTION TEMPERATURE (°C)
G
J
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
APT75GN120B2_L(G)
250
200
150
100
6,000
Cies
1,000
500
Coes
Cres
50
0
100
0
10
20
30
40
50
0 200 400 600 800 1000 1200 1400
V , COLLECTOR TO EMITTER VOLTAGE
CE
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
CE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18,Minimim Switching Safe Operating Area
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
D = 0.9
0.7
0.5
Note:
t
1
0.3
t
2
t
1
t
/
2
SINGLE PULSE
10-3
Duty Factor D =
Peak T = P x Z
0.1
+ T
C
J
DM
θJC
0.05
10-5
10-4
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
60
RC MODEL
Junction
temp. (°C)
0.0686
0.0630
0.0182
0.0139
0.203
1.62
Fmax = min (fmax, fmax2
)
10
5
0.05
fmax1
=
=
Power
(watts)
td(on) + tr + td(off) + tf
Pdiss - Pcond
Eon2 + Eoff
fmax2
T
T
=
125°C
75°C
J
=
C
D = 50 %
V
R
TJ - TC
RθJC
=
800V
Pdiss
=
CE
= 1.0Ω
G
Case temperature. (°C)
1
10 30
50
70 90 110 130 150
I , COLLECTOR CURRENT (A)
C
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Figure 20, Operating Frequency vs Collector Current
APT75GN120B2_L(G)
Gate Voltage
10%
APT75DQ120
T
= 125°C
J
td(on)
tr
VCE
IC
VCC
Collector Current
5%
90%
10%
5%
Collector Voltage
A
Switching Energy
D.U.T.
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 21, Inductive Switching Test Circuit
90%
Gate Voltage
T
= 125°C
J
td(off)
Collector Voltage
90%
tf
10%
Collector Current
0
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
T-MAX® (B2) Package Outline
TO-264(L) Package Outline
SAC: Tin, Silver, Copper
e1
e1
SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
4.60 (.181)
5.21 (.205)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
4.50
(.177) Max.
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
0.40 (.016)
0.79 (.031)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
Gate
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Collector
Emitter
Collector
Emitter
1.01 (.040)
1.40 (.055)
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.21 (.087)
2.59 (.102)
2.59 (.102)
3.00 (.118)
2.79 (.110)
5.45 (.215) BSC
2-Plcs.
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Dimensions in Millimeters and (Inches)
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