APT8020LFLL [ADPOW]
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.; 功率MOS 7TM是新一代低损耗,高电压,N沟道增强型功率MOSFET 。型号: | APT8020LFLL |
厂家: | ADVANCED POWER TECHNOLOGY |
描述: | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
文件: | 总2页 (文件大小:75K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
APT8020B2FLL
APT8020LFLL
800V 38A 0.200W
TM
FREDFET
POWER MOS 7
B2FLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)
and Qg. Power MOS 7TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
T-MAX™
TO-264
LFLL
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
D
S
• Popular T-MAX™ or TO-264 Package
G
•
FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT8020
800
UNIT
VDSS
ID
Drain-Source Voltage
Volts
Continuous Drain Current @ TC = 25°C
38
Amps
Volts
1
IDM
Pulsed Drain Current
132
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
690
Watts
W/°C
PD
5.52
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
38
1
EAR
EAS
50
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
800
38
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms
µA
0.200
250
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
1000
±100
5
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
EUROPE
APT8020 B2FLL - LFLL
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
MIN
MIN
TYP
5320
1020
168
196
26
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
VGS = 0V
VDS = 25V
f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
3
VGS = 10V
Total Gate Charge
VDD = 0.5 VDSS
Qgs
Qgd
td(on)
tr
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
ID = ID [Cont.] @ 25°C
111
19
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6W
17
td(off)
tf
Turn-off Delay Time
Fall Time
57
11
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
TYP
MAX
38
UNIT
Continuous Source Current (Body Diode)
IS
Amps
1
ISM
VSD
Pulsed Source Current (Body Diode)
132
1.3
18
2
Diode Forward Voltage
Peak Diode Recovery dv
Reverse Recovery Time
(VGS = 0V, IS = -ID [Cont.])
Volts
V/ns
5
dv
/
/
dt
dt
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
320
650
ns
µC
trr
(IS = -ID [Cont.], di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
2.2
7.5
14
Qrr
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
IRRM
Amps
24
THERMAL CHARACTERISTICS
Symbol Characteristic
TYP
MAX
0.18
40
UNIT
RqJC
RqJA
Junction to Case
°C/W
Junction to Ambient
1
2
3
4
5
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
See MIL-STD-750 Method 3471
Starting T = +25°C, L = 4.16mH, R = 25W, Peak I = 38A
j
G
L
dv
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
S £ -I
/
£ 700A/µs
VR £ V
T £ 150°C
J
dt
D Cont.
[
DSS
]
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAXTM (B2) Package Outline
TO-264 (L) Package Outline
4.69 (.185)
4.60 (.181)
5.31 (.209)
15.49 (.610)
16.26 (.640)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Gate
1.01 (.040)
1.40 (.055)
Drain
Source
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522 5,262,336
5,434,095 5,528,058
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