关闭背景特效

APT8058HVR [ADPOW]

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.; 功率MOS V是新一代高压N沟道增强型功率MOSFET 。

APT8058HVR


元器件型号：	APT8058HVR
生产厂家：	ADVANCED POWER TECHNOLOGY
描述和应用：	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 功率MOS V是新一代高压N沟道增强型功率MOSFET 。晶体晶体管功率场效应晶体管开关脉冲高压局域网
PDF文件：	总4页 (文件大小：64K)
下载文档：	下载PDF数据表文档文件
型号参数：APT8058HVR参数

APT8065

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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11 ADPOW

APT8065

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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14 ADPOW

APT8065

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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26 ADPOW

APT8065

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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26 ADPOW

APT8065AVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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34 ADPOW

APT8065BVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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33 ADPOW

APT8065BVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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30 ADPOW

APT8065BVFR_05

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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22 ADPOW

APT8065BVFRG

Power Field-Effect Transistor, 13A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

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0 MICROSEMI

APT8065BVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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52 ADPOW

APT8065BVRG

Power Field-Effect Transistor, 13A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,

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0 MICROSEMI

APT8065SVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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32 ADPOW

APT8065SVR

Power Field-Effect Transistor, 13A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3

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0 MICROSEMI

APT8065SVRG

Power Field-Effect Transistor, 13A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3

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0 MICROSEMI

APT-8066

Wide Band Medium Power Amplifier, 4000MHz Min, 8000MHz Max,

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0 AGILENT

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