APT8075BNR-GULLWING [ADPOW]
Power Field-Effect Transistor, 13A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN;
| 型号： | APT8075BNR-GULLWING |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Power Field-Effect Transistor, 13A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN 高压 高电压电源 |
| 文件： | 总4页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
D
S
TO-247
G
APT8075BN 800V 13.0A 0.75Ω
APT8090BN 800V 12.0A 0.90Ω
POWER MOS IV®
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
APT
APT
Symbol Parameter
8075BN
8090BN
UNIT
VDSS
800
13
800
12
Volts
Drain-Source Voltage
ID
Continuous Drain Current @ TC = 25°C
Amps
1
IDM
VGS
56
48
Pulsed Drain Current
Gate-Source Voltage
±30
310
2.48
Volts
Watts
W/°C
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
PD
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
-55 to 150
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
MIN
800
800
13
TYP
MAX
UNIT
APT8075BN
APT8090BN
APT8075BN
APT8090BN
APT8075BN
APT8090BN
Drain-Source Breakdown Voltage
BVDSS
Volts
(VGS = 0V, ID = 250 µA)
2
On State Drain Current
ID(ON)
Amps
Ohms
µA
(VDS > ID(ON) x RDS(ON) Max, VGS = 10V)
12
2
0.75
0.90
250
1000
±100
4
Drain-Source On-State Resistance
RDS(ON)
(VGS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
IGSS
nA
VGS(TH)
2
Volts
THERMAL CHARACTERISTICS
Characteristic
Symbol
MIN
TYP
MAX
0.40
40
UNIT
RθJC
Junction to Case
Junction to Ambient
°C/W
RθJA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 556 47 97 61
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT8075/8090BN
Test Conditions
GS = 0V
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
2410
370
120
88
2950
520
180
130
13
V
Output Capacitance
VDS = 25V
f = 1 MHz
pF
Reverse Transfer Capacitance
3
VGS = 10V
Total Gate Charge
Qgs
Qgd
td(on)
tr
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
8.9
44
67
VGS = 15V
13
27
V
DD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
G = 1.8Ω
18
36
td(off)
tf
Turn-off Delay Time
Fall Time
62
94
R
24
48
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
MIN
TYP
MAX
13
UNIT
APT8075BN
APT8090BN
APT8075BN
APT8090BN
Continuous Source Current
IS
(Body Diode)
12
Amps
1
56
Pulsed Source Current
(Body Diode)
ISM
48
2
VSD
t rr
Diode Forward Voltage (VGS = 0V, IS = -ID [Cont.])
1.3
1200
12
Volts
ns
Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs)
656
6.2
Q rr
Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)
µC
SAFE OPERATING AREA CHARACTERISTICS
Symbol Characteristic
Test Conditions / Part Number
DS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec.
MIN
TYP
MAX
UNIT
V
SOA1
SOA2
Safe Operating Area
310
310
56
Watts
I
DS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.
Safe Operating Area
APT8075BN
APT8090BN
ILM
Inductive Current Clamped
Amps
48
1
2
3
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
1.0
0.5
D=0.5
0.2
0.1
0.1
0.05
0.05
Note:
0.02
0.01
t
0.01
1
0.005
t
2
t
SINGLE PULSE
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
J
DM
θJC
C
0.001
-5
-4
-3
-2
-1
10
10
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
10
1.0
10
APT8075/8090BN
16
16
V
=6V &10V
GS
V
=10V
GS
5.5V
5V
6V
12
8
12
8
5.5V
5V
4.5V
4V
4.5V
4
4
4V
10
0
0
0
V
2
12
0
V
50
100
150
2 0 0
2 5 0
4
6
8
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
20
2.5
T
= -55°C
T
= 25°C
J
T
= +25°C
J
J
V
=10V
2µ SEC. PULSE TEST
GS
NORMALIZED TO
16
12
8
2.0
1.5
V
> I (ON) x R (ON)MAX.
DS
V
= 10V
@
0.5 I [Cont.]
D
DS
D
GS
230µ SEC. PULSE TEST
T
= +125°C
J
V
=20V
GS
1.0
0.5
0.0
4
T
= +125°C
= +25°C
J
T
T
= -55°C
J
J
0
0
V
2
4
6
8
0
10
20
30
40
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R (ON) vs DRAIN CURRENT
DS
16
1.2
1.1
1.0
12
APT8075BN
8
APT8090BN
0.9
0.8
0.7
4
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100 125 150
T , CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.4
2.5
I
= 0.5 I [Cont.]
D
D
V
= 10V
GS
1.2
1.0
0.8
2.0
1.5
1.0
0.5
0.0
0.6
0.4
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
Page 146
APT8075/8090BN
APT8075BN
APT8090BN
OPERATION HERE
60
10
10,000
1,000
100
10µS
C
LIMITED BY R (ON)
DS
iss
100µS
APT8075BN
APT8090BN
1mS
C
oss
10mS
100mS
DC
C
rss
1
T
T
=+25°C
=+150°C
C
J
SINGLE PULSE
10
1
5
10
50 100
800
0
10
20
30
40
50
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
16
12
8
100
I
= I [Cont.]
D
D
V
=80V
DS
50
20
V
=160V
DS
V
=400V
DS
T
= +150°C
T = +25°C
J
J
10
5
4
2
1
0
0
40
g
80
120
160
200
0
V
0.5
1.0
1.5
2.0
Q , TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-247AD Package Outline
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
3.55 (.140)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Gate
1.01 (.040)
1.40 (.055)
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
相关型号：
APT8075BVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
APT8075BVFRG
Power Field-Effect Transistor, 12A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
MICROSEMI
APT8075BVFR_05
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
APT8075BVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
APT8075BVR
Power Field-Effect Transistor, 12A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
MICROSEMI
APT8075BVRG
Power Field-Effect Transistor, 12A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
MICROSEMI
©2020 ICPDF网 联系我们和版权申明