APT80GP60J [ADPOW]

POWER MOS 7 IGBT; 功率MOS 7 IGBT

APT80GP60J


型号：	APT80GP60J
厂家：	ADVANCED POWER TECHNOLOGY
描述：	POWER MOS 7 IGBT 功率MOS 7 IGBT 晶体晶体管功率控制瞄准线双极性晶体管栅局域网
文件：	总6页 (文件大小：103K)
下载：	下载PDF数据表文档文件

APT80GP60JD3

Insulated Gate Bipolar Transistor, 68A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4

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0 MICROSEMI

APT80GP60JDF3

Insulated Gate Bipolar Transistor, 151A I(C), 600V V(BR)CES

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0 MICROSEMI

APT80GP60JDQ3

POWER MOS 7 IGBT

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27 ADPOW

APT80GP60JDQ3

POWER MOS 7 IGBT

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30 ADPOW

APT80M60J

N-Channel MOSFET

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18 MICROSEMI

APT80M60J

N-Channel MOSFET

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29 MICROSEMI

APT80M60J_09

N-Channel MOSFET

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4 MICROSEMI

APT80SM120B

Power Field-Effect Transistor,

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0 MICROSEMI

APT81H50B2

Power Field-Effect Transistor, 81A I(D), 500V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB, ROHS COMPLIANT PACKAGE-3

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0 MICROSEMI

APT81H50L

Power Field-Effect Transistor, 81A I(D), 500V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, ROHS COMPLIANT PACKAGE-3

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0 MICROSEMI

APT-8255R

2000MHz - 8000MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER

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0 AGILENT

APT8256

Analog Circuit

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1 APLUS

APT-8266R

2000MHz - 8000MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER

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0 AGILENT

APT83GU30B

POWER MOS 7 IGBT

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43 ADPOW

APT83GU30B

Insulated Gate Bipolar Transistor, 100A I(C), 300V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN

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0 MICROSEMI

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