APTC80DSK29T3 [ADPOW]
Dual buck chopper Super Junction MOSFET Power Module; 双降压斩波超级结MOSFET功率模块
| 型号： | APTC80DSK29T3 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Dual buck chopper Super Junction MOSFET Power Module |
| 文件： | 总6页 (文件大小：337K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTC80DSK29T3
Super Junction MOSFET
VDSS = 800V
RDSon = 290mΩ max @ Tj = 25°C
ID = 15A @ Tc = 25°C
Application
13 14
•
•
AC and DC motor control
Switched Mode Power Supplies
Q1
Q2
Features
11
10
18
19
•
22
23
7
8
-
-
-
-
-
Ultra low RDSon
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Very rugged
CR1
CR2
32
•
•
Kelvin source for easy drive
Very low stray inductance
29
15
30
31
R1
-
Symmetrical design
16
•
•
Internal thermistor for temperature monitoring
High level of integration
Benefits
28 27 26 25
23 22
20 19 18
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
29
30
16
15
31
32
14
13
•
•
Low profile
Each leg can be easily paralleled to achieve a single
buck of twice the current capability
2
3
4
7
8
10 11
12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
800
V
Tc = 25°C
15
ID
Continuous Drain Current
A
Tc = 80°C
11
IDM
VGS
RDSon
PD
Pulsed Drain current
60
Gate - Source Voltage
±30
290
156
V
mΩ
W
Drain - Source ON Resistance
Maximum Power Dissipation
Tc = 25°C
IAR
EAR
EAS
Avalanche current (repetitive and non repetitive)
24
0.5
670
A
Repetitive Avalanche Energy
mJ
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 – 6
APT website – http://www.advancedpower.com
APTC80DSK29T3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 250µA
800
V
VGS = 0V,VDS = 800V Tj = 25°C
25
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V,VDS = 800V Tj = 125°C
250
290
3.9
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
VGS = 10V, ID = 7.5A
mΩ
V
nA
VGS = VDS, ID = 1mA
2.1
3
IGS S
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±100
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
2254
VGS = 0V
VDS = 25V
f = 1MHz
pF
Output Capacitance
1046
54
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
90
11
45
VGS = 10V
VBus = 400V
ID = 15A
nC
Inductive switching @125°C
VGS = 15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
10
13
83
35
VBus = 533V
ns
ID = 15A
RG = 5Ω
Tf
Fall Time
Inductive switching @ 25°C
VGS = 15V, VBus = 533V
ID = 15A, RG = 5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 533V
ID = 15A, RG = 5Ω
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy X
Turn-off Switching Energy Y
Turn-on Switching Energy X
Turn-off Switching Energy Y
243
139
425
171
µJ
µJ
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Maximum Average Forward Current
1000
V
µA
A
Tj = 25°C
VR=1000V
250
750
IRM
Tj = 125°C
IF(AV)
50% duty cycle
IF = 30A
IF = 60A
Tc = 70°C
30
1.9
2.2
1.7
2.3
VF
Diode Forward Voltage
V
IF = 30A
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
290
390
670
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 30A
VR = 667V
di/dt=200A/µs
Qrr
nC
2350
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
2 – 6
APT website – http://www.advancedpower.com
APTC80DSK29T3
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.8
1.2
RthJC
Junction to Case
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
2500
-40
150
125
100
4.7
°C
-40
Operating Case Temperature
-40
Torque Mounting torque
Wt
To heatsink
M4
N.m
g
Package Weight
110
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R25
Resistance @ 25°C
68
kΩ
K
B25/85 T25 = 298.16 K
4080
R25
RT
=
T: Thermistor temperature
RT: Thermistor value at T
1
1
T
25 /85
exp B
−
T25
Package outline
2 8
1 7
1
12
3 – 6
APT website – http://www.advancedpower.com
APTC80DSK29T3
Typical performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.9
0.7
0.5
0.3
Single Pulse
0.1
0.05
0.00001
0.0001
0.001
0.01
0.1
1
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
40
35
30
25
20
15
10
5
50
40
30
20
10
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
VGS=15&10V
6.5V
6V
5.5V
5V
4.5V
4V
TJ=25°C
TJ=125°C
TJ=-55°C
0
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1.3
1.2
1.1
1
16
14
12
10
8
Normalized to
VGS=10V @ 7.5A
VGS=10V
VGS=20V
6
4
0.9
0.8
2
0
25
50
75
100
125
150
0
5
10
15
20
25
30
TC, Case Temperature (°C)
ID, Drain Current (A)
4 – 6
APT website – http://www.advancedpower.com
APTC80DSK29T3
Breakdown Voltage vs Temperature
ON resistance vs Temperature
3.0
1.15
1.10
1.05
1.00
0.95
0.90
VGS=10V
ID= 7.5A
2.5
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
-50
0
50
100
150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Maximum Safe Operating Area
Threshold Voltage vs Temperature
100
10
1
1.2
1.1
1.0
0.9
0.8
0.7
limited by
RDn
100µs
1ms
10ms
Single pulse
TJ=150°C
100ms
0
-50
0
50
100
150
1
10
100
1000
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Gate Charge vs Gate to Source Voltage
Capacitance vs Drain to Source Voltage
10000
16
ID=15A
TJ=25°C
14
12
10
8
Ciss
VDS=160V
VDS=400V
1000
100
10
Coss
Crss
VDS=640V
6
4
2
0
0
20
40
60
80
100
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
5 – 6
APT website – http://www.advancedpower.com
APTC80DSK29T3
Delay Times vs Current
Rise and Fall times vs Current
50
40
30
20
10
0
100
80
60
40
20
0
td(off)
tf
VDS=533V
RG=5Ω
TJ=125°C
L=100µH
VDS=533V
RG=5Ω
TJ=125°C
L=100µH
tr
td(on)
20
5
10
15
25
5
10
15
20
25
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
800
700
600
500
400
300
200
100
0
1250
1000
750
500
250
0
VDS=533V
VDS=533V
RG=5Ω
TJ=125°C
L=100µH
Eon
ID=15A
TJ=125°C
L=100µH
Eoff
Eon
Eoff
0
10
20
30
40
50
5
10
15
20
25
ID, Drain Current (A)
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
Operating Frequency vs Drain Current
400
350
300
250
200
150
100
50
VDS=533V
ZVS
D=50%
RG=5Ω
TJ=125°C
TC=75°C
ZCS
100
10
1
TJ=150°C
TJ=25°C
1
Hard
switching
0
4
6
8
10
12
14
0.2
0.6
1.4
1.8
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
6 – 6
APT website – http://www.advancedpower.com
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