APTGF50X120E3 [ADPOW]
3 Phase bridge NPT IGBT Power Module; 3相桥NPT IGBT功率模块型号: | APTGF50X120E3 |
厂家: | ADVANCED POWER TECHNOLOGY |
描述: | 3 Phase bridge NPT IGBT Power Module |
文件: | 总3页 (文件大小:213K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
APTGF50X120E3
VCES = 1200V
IC = 50A @ Tc = 80°C
3 Phase bridge
Application
•
Features
•
AC Motor control
Non Punch Through (NPT) IGBT®
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
•
•
•
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
19
17
15
Benefits
•
•
•
•
•
•
•
Stable temperature behavior
Very rugged
20
21
14
13
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
1
2
3
4
5
6
7
8
9
10
11 12
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
TC = 80°C
TC = 25°C
78
50
150
±20
400
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 125°C
SCSOA Short Circuit Save Operating Area
500A@1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 3
APT website – http://www.advancedpower.com
APTGF50X120E3
Electrical Characteristics
Symbol Characteristic
All ratings @ Tj = 25°C unless otherwise specified
Test Conditions
Min Typ Max Unit
1200
BVCES Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 3mA
V
Tj = 25°C
0.8
4
1
VGE = 0V
VCE = 1200V
ICES
Zero Gate Voltage Collector Current
mA
Tj = 125°C
Tj = 25°C
Tj = 125°C
2.0
4.5
2.5
3.1
3.0
VGE =15V
IC = 50A
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
V
3.7
6.5
200
VGE = VCE , IC = 2 mA
VGE = 20V, VCE = 0V
V
nA
IGES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
3300
pF
500
220
44
Inductive Switching (125°C)
Td(on)
V
GE = ±15V
Tr
Rise Time
56
380
70
ns
VBus = 600V
IC = 50A
RG = 22Ω
Td(off) Turn-off Delay Time
Tf Fall Time
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IF = 50A
VGE = 0V
Tj = 25°C
Tj = 125°C
2.3
1.8
2.8
VF
trr
Diode Forward Voltage
Reverse Recovery Time
V
IF = 50A
VR = 600V
di/dt =800A/µs
IF = 50A
VR = 600V
di/dt =800A/µs
Tj = 125°C
200
ns
Tj = 25°C
2.8
8
Qrr
Reverse Recovery Charge
µC
Tj = 125°C
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.35
0.7
°C/W
RthJC
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
VISOL
2500
V
TJ
TSTG
TC
Torque
Wt
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
-40
-40
-40
3
150
125
125
4.5
°C
Mounting torque
To Heatsink
M5
N.m
g
Package Weight
300
2 - 3
APT website – http://www.advancedpower.com
APTGF50X120E3
Package outline
PIN 1
PIN 21
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
3 - 3
APT website – http://www.advancedpower.com
相关型号:
APTGF50X120P2
Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel, MODULE-17
MICROSEMI
APTGF50X120P2G
Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel, MODULE-17
MICROSEMI
APTGF50X120TE3
Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
MICROSEMI
APTGF50X120TE3G
Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
MICROSEMI
APTGF50X60BTP3
Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, MODULE-35
MICROSEMI
APTGF50X60RTP3
Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, MODULE-35
MICROSEMI
©2020 ICPDF网 联系我们和版权申明