APTGT150TDU60P [ADPOW]
Triple Dual Common Source Trench + Field Stop IGBT Power Module; 三重双共源沟道+场截止IGBT功率模块
| 型号： | APTGT150TDU60P |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Triple Dual Common Source Trench + Field Stop IGBT Power Module |
| 文件： | 总5页 (文件大小：283K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT150TDU60P
Triple Dual Common Source
Trench + Field Stop IGBT®
VCES = 600V
IC = 150A @ Tc = 80°C
Application
C1
C3
C5
•
•
•
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
G1
G3
G5
E1
E2
E3
E4
E5
E6
Features
E1/E2
E3/E4
E5/E6
•
Trench + Field Stop IGBT® Technology
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
G6
G2
G4
C2
C4
C6
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
•
•
Kelvin emitter for easy drive
Very low stray inductance
-
-
Symmetrical design
Lead frames for power connections
•
High level of integration
Benefits
•
•
•
•
•
•
•
•
Stable temperature behavior
C 1
C 3
C 5
Very rugged
G1
E1
G3
E3
G5
E5
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Very low (12mm) profile
Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
E1/E2
E3/E4
E5/E6
E2
E4
G4
E6
G6
G2
C 2
C 4
C 6
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
225
150
350
±20
480
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 150°C
RBSOA Reverse Bias Safe Operating Area
300A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 5
APT website – http://www.advancedpower.com
APTGT150TDU60P
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
250
1.9
µA
Tj = 25°C
Tj = 150°C
1.5
1.7
5.8
VGE =15V
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES
V
IC = 150A
VGE = VCE , IC = 1.5 mA
VGE = 20V, VCE = 0V
5.0
6.5
400
V
nA
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
9200
pF
Output Capacitance
580
270
115
45
225
55
Reverse Transfer Capacitance
Inductive Switching (25°C)
VGE = ±15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
ns
VBus = 300V
IC = 150A
RG = 6.8Ω
Inductive Switching (150°C)
VGE = ±15V
130
50
300
70
ns
VBus = 300V
IC = 150A
Tf
Fall Time
RG = 6.8Ω
Eon
Eoff
Turn on Energy
Turn off Energy
2.6
5.3
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
VR=600V
250
500
IRM
Maximum Reverse Leakage Current
µA
Tj = 150°C
IF(AV)
VF
Maximum Average Forward Current
Diode Forward Voltage
50% duty cycle
IF = 150A
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
150
1.6
A
V
2
VGE = 0V
1.5
130
225
6.9
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 150A
VR = 300V
di/dt =2100A/µs
Qrr
µC
Tj = 150°C
14.5
2 - 5
APT website – http://www.advancedpower.com
APTGT150TDU60P
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.31
0.52
RthJC
Junction to Case
°C/W
V
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
3
175
125
100
5
°C
Operating Case Temperature
Torque Mounting torque
Wt
To heatsink
M6
N.m
g
Package Weight
250
Package outline (dimensions in mm)
5 places (3:1)
3 - 5
APT website – http://www.advancedpower.com
APTGT150TDU60P
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
300
300
250
200
150
100
50
VGE=19V
TJ=25°C
TJ = 150°C
250
200
150
100
50
TJ=125°C
VGE=13V
VGE=15V
TJ=150°C
VGE=9V
TJ=25°C
0
0
0
0.5
1
1.5
VCE (V)
2
2.5
3
3.5
0
0.5
1
1.5
VCE (V)
2
2.5
3
Energy losses vs Collector Current
Transfert Characteristics
300
250
200
150
100
50
10
8
VCE = 300V
Eoff
TJ=25°C
VGE = 15V
RG = 6.8Ω
TJ = 150°C
Eon
Er
6
4
TJ=125°C
TJ=150°C
2
Eon
TJ=25°C
10
0
0
0
50
100
150
C (A)
200
250
300
5
6
7
8
9
11
12
I
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
20
350
300
250
200
150
100
50
VCE = 300V
VGE =15V
Eon
16
IC = 150A
TJ = 150°C
12
8
Eoff
Er
Eoff
VGE=15V
TJ=150°C
RG=6.8Ω
Eon
4
0
0
5
10
15
20
25
30
35
40
0
100 200 300 400 500 600 700
VCE (V)
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.35
0.3
IGBT
0.9
0.7
0.5
0.3
0.25
0.2
0.15
0.1
0.1
0.05
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
4 - 5
APT website – http://www.advancedpower.com
APTGT150TDU60P
Operating Frequency vs Collector Current
Forward Characteristic of diode
300
120
100
80
60
40
20
0
VCE=300V
D=50%
RG=6.8Ω
250
200
150
100
50
ZCS
TJ=150°C
Tc=85°C
ZVS
TJ=125°C
TJ=150°C
Hard
switching
TJ=25°C
1.6
0
0
0.4
0.8
1.2
F (V)
2
2.4
0
50
100
C (A)
150
200
V
I
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.6
0.5
0.4
0.3
0.2
0.1
0
Diode
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
5 - 5
APT website – http://www.advancedpower.com
相关型号：
©2020 ICPDF网 联系我们和版权申明