APTGT50H60T3 [ADPOW]

Full - Bridge Trench + Field Stop IGBT Power Module; 全 - 桥沟道+场站IGBT功率模块
APTGT50H60T3
型号: APTGT50H60T3
厂家: ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述:

Full - Bridge Trench + Field Stop IGBT Power Module
全 - 桥沟道+场站IGBT功率模块

晶体 晶体管 功率控制 双极性晶体管 局域网
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中文:  中文翻译
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APTGT50H60T3  
Full - Bridge  
Trench + Field Stop IGBT®  
Power Module  
VCES = 600V  
IC = 50A @ Tc = 80°C  
Application  
13 14  
Welding converters  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Motor control  
Q1  
Q3  
CR1  
22  
CR3  
11  
10  
18  
19  
Features  
Trench + Field Stop IGBT® Technology  
7
8
-
-
-
-
-
-
-
-
Low voltage drop  
23  
Low tail current  
Q2  
29  
Q4  
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
CR2  
CR4  
26  
27  
4
3
Low leakage current  
Avalanche energy rated  
RBSOA and SCSOA rated  
30  
31  
32  
Kelvin emitter for easy drive  
Very low stray inductance  
15  
16  
R1  
-
Symmetrical design  
High level of integration  
Internal thermistor for temperature monitoring  
28 27 26 25  
23 22  
20 19 18  
29  
16  
Benefits  
30  
15  
Stable temperature behavior  
Very rugged  
Solderable terminals for easy PCB mounting  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
Low profile  
Each leg can be easily paralleled to achieve a phase  
leg of twice the current capability  
31  
32  
14  
13  
2
3
4
7
8
10 11  
12  
All multiple inputs and outputs must be shorted together  
Example: 13/14 ; 29/30 ; 22/23 …  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
V
VCES  
Collector - Emitter Breakdown Voltage  
600  
TC = 25°C  
80  
IC  
Continuous Collector Current  
A
TC = 80°C  
TC = 25°C  
50  
100  
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
±20  
V
W
TC = 25°C  
TJ = 150°C  
Maximum Power Dissipation  
176  
RBSOA Reverse Bias Safe Operating Area  
100A @ 550V  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 - 5  
APT website – http://www.advancedpower.com  
APTGT50H60T3  
All ratings @ Tj = 25°C unless otherwise specified  
Electrical Characteristics  
Symbol Characteristic  
Test Conditions  
Min Typ Max Unit  
ICES  
Zero Gate Voltage Collector Current  
VGE = 0V, VCE = 600V  
250  
1.9  
µA  
Tj = 25°C  
Tj = 150°C  
1.5  
1.7  
5.8  
VGE =15V  
VCE(sat) Collector Emitter Saturation Voltage  
VGE(th) Gate Threshold Voltage  
IGES  
V
IC = 50A  
VGE = VCE , IC = 600µA  
VGE = 20V, VCE = 0V  
5.0  
6.5  
600  
V
nA  
Gate – Emitter Leakage Current  
Dynamic Characteristics  
Symbol Characteristic  
Test Conditions  
Min Typ Max Unit  
Cies  
Coes  
Cres  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
3150  
200  
95  
110  
45  
200  
40  
VGE = 0V  
VCE = 25V  
f = 1MHz  
pF  
Inductive Switching (25°C)  
VGE = ±15V  
Td(on) Turn-on Delay Time  
Tr Rise Time  
Td(off) Turn-off Delay Time  
Tf Fall Time  
Td(on) Turn-on Delay Time  
Tr Rise Time  
ns  
VBus = 300V  
IC = 50A  
RG = 10  
Inductive Switching (150°C)  
120  
50  
VGE = ±15V  
ns  
VBus = 300V  
Td(off) Turn-off Delay Time  
250  
IC = 50A  
Tf  
Eon  
Eoff  
Fall Time  
Turn-on Switching Energy  
Turn-off Switching Energy  
60  
RG = 10Ω  
0.87  
1.75  
mJ  
Reverse diode ratings and characteristics  
Symbol Characteristic  
Test Conditions  
Min Typ Max Unit  
VRRM  
Maximum Peak Repetitive Reverse Voltage  
Maximum Reverse Leakage Current  
600  
V
µA  
A
Tj = 25°C  
VR=600V  
250  
500  
IRM  
Tj = 150°C  
IF(AV)  
VF  
Maximum Average Forward Current  
Diode Forward Voltage  
50% duty cycle  
Tc = 80°C  
50  
1.6  
1.5  
IF = 50A  
Tj = 25°C  
Tj = 150°C  
2
VGE = 0V  
V
Tj = 25°C  
Tj = 150°C  
Tj = 25°C  
Tj = 150°C  
125  
220  
2.6  
5.4  
trr  
Reverse Recovery Time  
Reverse Recovery Charge  
ns  
IF = 50A  
VR = 300V  
di/dt =1800A/µs  
Qrr  
µC  
2 - 5  
APT website – http://www.advancedpower.com  
APTGT50H60T3  
Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).  
Symbol Characteristic  
R25 Resistance @ 25°C  
B25/85 T25 = 298.15 K  
Min Typ Max Unit  
50  
kΩ  
K
3952  
R25  
T: Thermistor temperature  
RT: Thermistor value at T  
RT  
=
1
1
T
25/85   
exp B  
T25  
Thermal and package characteristics  
Symbol Characteristic  
Min Typ Max Unit  
IGBT  
Diode  
0.85  
RthJC  
Junction to Case  
°C/W  
1.42  
VISOL  
TJ  
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz  
Operating junction temperature range  
Storage Temperature Range  
2500  
-40  
-40  
-40  
1.5  
V
175  
125  
100  
4.7  
°C  
TSTG  
TC  
Operating Case Temperature  
Torque Mounting torque  
Wt  
To heatsink  
M4  
N.m  
g
Package Weight  
110  
Package outline (dimensions in mm)  
2 8  
1 7  
1
12  
3 - 5  
APT website – http://www.advancedpower.com  
APTGT50H60T3  
Typical Performance Curve  
Output Characteristics (VGE=15V)  
Output Characteristics  
100  
80  
60  
40  
20  
0
100  
80  
60  
40  
20  
0
VGE=19V  
TJ=25°C  
TJ = 150°C  
TJ=125°C  
VGE=13V  
VGE=15V  
TJ=150°C  
VGE=9V  
TJ=25°C  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
0.5  
1
1.5  
2
2.5  
3
VCE (V)  
V
CE (V)  
Energy losses vs Collector Current  
Transfert Characteristics  
100  
80  
60  
40  
20  
0
3.5  
3
VCE = 300V  
VGE = 15V  
Eoff  
TJ=25°C  
RG = 10  
2.5  
2
TJ = 150°C  
Eon  
1.5  
1
TJ=125°C  
Er  
TJ=150°C  
0.5  
0
Eon  
TJ=25°C  
10  
0
20  
40  
IC (A)  
60  
80  
100  
5
6
7
8
9
11  
12  
VGE (V)  
Switching Energy Losses vs Gate Resistance  
Reverse Bias Safe Operating Area  
6
125  
100  
75  
50  
25  
0
VCE = 300V  
VGE =15V  
IC = 50A  
Eon  
5
4
3
2
1
0
TJ = 150°C  
Eoff  
Eoff  
Eon  
25  
VGE=15V  
TJ=150°C  
RG=10Ω  
Er  
5
15  
35  
45  
55  
65  
0
100 200 300 400 500 600 700  
VCE (V)  
Gate Resistance (ohms)  
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration  
1
IGBT  
0.9  
0.7  
0.5  
0.3  
0.1  
0.8  
0.6  
0.4  
0.2  
0
Single Pulse  
0.05  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Rectangular Pulse Duration in Seconds  
4 - 5  
APT website – http://www.advancedpower.com  
APTGT50H60T3  
Operating Frequency vs Collector Current  
Forward Characteristic of diode  
100  
80  
60  
40  
20  
0
120  
100  
80  
60  
40  
20  
0
VCE=300V  
D=50%  
RG=10  
TJ=150°C  
Tc=85°C  
ZCS  
ZVS  
TJ=125°C  
TJ=150°C  
Hard  
switching  
TJ=25°C  
0
0.4  
0.8  
1.2  
VF (V)  
1.6  
2
2.4  
0
20  
40  
IC (A)  
60  
80  
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration  
1.6  
1.4  
1.2  
1
Diode  
0.9  
0.7  
0.5  
0.3  
0.8  
0.6  
0.4  
0.2  
0
0.1  
0.05  
Single Pulse  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Rectangular Pulse Duration in Seconds  
APT reserves the right to change, without notice, the specifications and information contained herein  
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522  
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.  
5 - 5  
APT website – http://www.advancedpower.com  

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