APTM100H45ST [ADPOW]
Full bridge Series & parallel diodes MOSFET Power Module; 全桥系列和并联二极管的MOSFET功率模块
| 型号： | APTM100H45ST |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Full bridge Series & parallel diodes MOSFET Power Module |
| 文件： | 总6页 (文件大小：314K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM100H45ST
VDSS = 1000V
Full bridge
RDSon = 450mΩ max @ Tj = 25°C
Series & parallel diodes
MOSFET Power Module
ID = 18A @ Tc = 25°C
VBUS
Application
•
•
•
Motor control
CR1A
CR3A
Switched Mode Power Supplies
Uninterruptible Power Supplies
CR1B CR3B
O UT1 OUT2
Q1
Q3
G3
S3
G1
S1
Features
•
Power MOS 7® MOSFETs
CR2A
CR4A
-
-
-
-
-
Low RDSon
CR2B CR4B
Q2
Q4
Low input and Miller capacitance
Low gate charge
G4
S4
G2
S2
Avalanche energy rated
Very rugged
0/VBUS
NTC1
NTC2
•
•
Kelvin source for easy drive
Very low stray inductance
-
-
Symmetrical design
Lead frames for power connections
•
•
Internal thermistor for temperature monitoring
High level of integration
G3
G4
S4
OUT2
OUT1
S3
Benefits
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
VBUS
0/VBUS
S1
G1
S2
G2
NTC2
NTC1
•
Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
Tc = 80°C
18
ID
Continuous Drain Current
A
14
IDM
VGS
RDSon
PD
Pulsed Drain current
72
Gate - Source Voltage
±30
450
357
V
mΩ
W
Drain - Source ON Resistance
Maximum Power Dissipation
Tc = 25°C
IAR
EAR
EAS
Avalanche current (repetitive and non repetitive)
18
A
Repetitive Avalanche Energy
50
mJ
Single Pulse Avalanche Energy
2500
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1 – 6
APTM100H45ST
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
VGS = 0V, ID = 250µA
VGS = 0V,VDS= 1000V
VGS = 0V,VDS= 800V
VGS = 10V, ID = 9A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage
1000
V
Tj = 25°C
Tj = 125°C
100
500
450
5
IDSS
Zero Gate Voltage Drain Current
µA
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
mΩ
V
nA
3
IGS S
Gate – Source Leakage Current
±100
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
4350
VGS = 0V
VDS = 25V
f = 1MHz
pF
Output Capacitance
715
120
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
154
26
VGS = 10V
VBus = 500V
ID = 18A
nC
97
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
10
12
121
35
Inductive switching @ 125°C
VGS = 15V
VBus = 667V
ns
ID = 18A
RG = 5Ω
Tf
Fall Time
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 18A, RG = 5Ω
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy X
Turn-off Switching Energy Y
Turn-on Switching Energy X
Turn-off Switching Energy Y
639
380
µJ
µJ
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 18A, RG = 5Ω
1046
451
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 85°C
30
1.1
1.4
0.9
A
IF = 30A
1.15
VF
Diode Forward Voltage
IF = 60A
IF = 30A
IF = 30A
V
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
24
48
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
VR = 133V
di/dt = 200A/µs
IF = 30A
33
Qrr
nC
VR = 133V
di/dt = 200A/µs
150
APT website – http://www.advancedpower.com
2 – 6
APTM100H45ST
Parallel diode ratings and characteristics
Symbol Characteristic
IF(AV) Maximum Average Forward Current
Test Conditions
Min Typ Max Unit
50% duty cycle
Tc = 65°C
30
1.9
2.2
1.7
A
IF = 30A
2.3
VF
Diode Forward Voltage
IF = 60A
V
IF = 30A
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
IF = 30A
290
390
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
VR = 667V
di/dt = 200A/µs
IF = 30A
670
Qrr
nC
VR = 667V
di/dt = 200A/µs
2350
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC
Junction to Case
Transistor
Diode
0.35
°C/W
1.2
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
2500
-40
-40
V
150
125
100
4.7
°C
TSTG
TC
Operating Case Temperature
-40
Torque Mounting torque
To Heatsink
M5
N.m
g
Wt
Package Weight
160
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R25
Resistance @ 25°C
68
kΩ
B25/85 T25 = 298.16 K
4080
K
R25
RT
=
T: Thermistor temperature
RT: Thermistor value at T
1
1
T
25 /85
exp B
−
T25
Package outline
APT website – http://www.advancedpower.com
3 – 6
APTM100H45ST
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
0.35
0.3
0.9
0.7
0.25
0.2
0.5
0.3
0.15
0.1
0.1
0.05
0.05
0
0.00001
Single Pulse
0.01
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
7V
6.5V
VGS=15&8V
6V
TJ=25°C
5.5V
5V
TJ=125°C
TJ=-55°C
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
9 10
V
DS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1.3
1.2
1.1
1
20
18
16
14
12
10
8
Normalized to
GS=10V @ 9A
V
VGS=10V
VGS=20V
6
4
2
0
0.9
0.8
0
10
20
30
40
50
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
4 – 6
APTM100H45ST
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
VGS=10V
ID=9A
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100µs
limited by
RDSon
1ms
10
1
Single pulse
TJ=150°C
10ms
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
14
12
10
8
ID=18A
TJ=25°C
VDS=200V
VDS=500V
10000
1000
100
Ciss
VDS=800V
Coss
Crss
6
4
2
0
10
0
40
80
120
160
200
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
APT website – http://www.advancedpower.com
5 – 6
APTM100H45ST
Delay Times vs Current
Rise and Fall times vs Current
60
50
40
30
20
10
0
160
140
120
100
80
VDS=667V
RG=5Ω
td(off)
TJ=125°C
L=100µH
tf
tr
VDS=667V
RG=5Ω
TJ=125°C
L=100µH
60
40
td(on)
20
0
5
10 15 20 25 30 35 40
5
10 15
20 25
30
35
40
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
2.5
2
2
1.5
1
VDS=667V
ID=18A
VDS=667V
RG=5Ω
Eoff
Eon
TJ=125°C
L=100µH
TJ=125°C
L=100µH
1.5
1
Eon
Eoff
0.5
0
0.5
0
5
10 15 20 25 30 35 40
0
5
10
15
20
25
30
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
100
10
250
200
150
100
50
VDS=667V
D=50%
RG=5Ω
TJ=125°C
TJ=150°C
TJ=25°C
1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
6
8
10
12
14
16
18
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6 – 6
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