APTM10DDAM09T3 [ADPOW]
Dual Boost chopper MOSFET Power Module; 双升压斩波MOSFET功率模块
| 型号： | APTM10DDAM09T3 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Dual Boost chopper MOSFET Power Module |
| 文件： | 总6页 (文件大小：316K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM10DDAM09T3
VDSS = 100V
RDSon = 9mΩ typ @ Tj = 25°C
ID = 139A @ Tc = 25°C
MOSFET Power Module
13 14
Application
•
•
•
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
CR1
Q1
CR2
22
23
7
8
Features
•
Power MOS V® MOSFETs
-
-
-
-
-
Low RDSon
Q2
Low input and Miller capacitance
Low gate charge
26
27
4
3
Avalanche energy rated
Very rugged
•
•
Kelvin source for easy drive
Very low stray inductance
29
30
31
R1
32
15
16
-
Symmetrical design
•
•
Internal thermistor for temperature monitoring
High level of integration
28 27 26 25
23 22
20 19 18
Benefits
29
30
16
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
15
31
32
14
13
•
•
Low profile
Each leg can be easily paralleled to achieve a single
boost of twice the current capability
2
3
4
7
8
10 11
12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
Max ratings
100
Unit
VDSS
Drain - Source Breakdown Voltage
V
Tc = 25°C
Tc = 80°C
139
ID
Continuous Drain Current
A
100 *
430
IDM
VGS
RDSon
PD
Pulsed Drain current
Gate - Source Voltage
±30
V
mΩ
W
Drain - Source ON Resistance
Maximum Power Dissipation
9.5
Tc = 25°C
390
IAR
EAR
EAS
Avalanche current (repetitive and non repetitive)
100
A
Repetitive Avalanche Energy
50
mJ
Single Pulse Avalanche Energy
* Specification of MOSFET device but output current must be limited to 75A to not exceed a delta of temperature
3000
greater than 30°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1 – 6
APTM10DDAM09T3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 100V Tj = 25°C
100
500
9.5
4
±100
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V,VDS = 80V
Tj = 125°C
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
IGS S
VGS = 10V, ID = 69.5A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
9
mΩ
V
nA
2
Gate – Source Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
9875
VGS = 0V
VDS = 25V
f = 1MHz
pF
Output Capacitance
3940
1470
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
350
60
VGS = 10V
VBus = 50V
ID =139A
nC
180
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
35
70
95
Inductive switching @ 125°C
VGS = 15V
VBus = 66V
ns
ID = 139A
RG = 5Ω
Tf
Fall Time
125
Inductive switching @ 25°C
VGS = 15V, VBus = 66V
ID = 139A, RG = 5Ω
Eon
Turn-on Switching Energy X
552
604
608
641
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy Y
Turn-on Switching Energy X
Turn-off Switching Energy Y
Inductive switching @ 125°C
VGS = 15V, VBus = 66V
ID = 139A, RG = 5Ω
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
200
V
µA
A
Tj = 25°C
Tj = 125°C
Tc = 80°C
250
500
IRM
VR=200V
IF(AV)
Maximum Average Forward Current
Diode Forward Voltage
50% duty cycle
100
IF = 100A
IF = 200A
IF = 100A
1
1.4
0.9
VF
V
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
60
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 100A
110
200
840
VR = 133V
di/dt =200A/µs
Qrr
nC
APT website – http://www.advancedpower.com
2 – 6
APTM10DDAM09T3
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.32
0.55
RthJC
Junction to Case
°C/W
V
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
2500
-40
-40
-40
1.5
150
125
100
4.7
°C
Torque Mounting torque
Wt
To heatsink
M4
N.m
g
Package Weight
110
Temperature sensor NTC (for more information see application note APT0406 on www.advancedpower.com).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
Package outline (dimensions in mm)
2 8
1 7
1
12
APT website – http://www.advancedpower.com
3 – 6
APTM10DDAM09T3
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3
0.9
0.25
0.2
0.7
0.5
0.3
0.15
0.1
Single Pulse
0.1
0.05
0
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
600
500
400
300
200
100
0
120
100
80
60
40
20
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
VGS=15V, 10V & 9V
8V
7V
TJ=25°C
6V
TJ=125°C
TJ=-55°C
0
4
8
12 16 20 24 28
0
1
2
3
4
5
6
7
V
DS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
160
RDS(on) vs Drain Current
1.2
1.1
1
Normalized to
GS=10V @ 69.5A
140
120
100
80
V
VGS=10V
60
VGS=20V
0.9
0.8
40
20
0
0
25
50
75
100
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
4 – 6
APTM10DDAM09T3
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
1.15
1.10
1.05
1.00
0.95
0.90
VGS=10V
ID= 69.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1.2
1.1
1.0
0.9
0.8
0.7
0.6
1000
100
10
limited by
RDS on
100µs
1ms
10ms
Single pulse
TJ=150°C
1
-50 -25
0
25 50 75 100 125 150
1
10
VDS, Drain to Source Voltage (V)
100
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
16
ID=139A
VDS=20V
14
12
10
8
TJ=25°C
Ciss
10000
1000
100
VDS=50V
Coss
Crss
VDS=80V
6
4
2
0
0
100
200
300
400
500
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
APT website – http://www.advancedpower.com
5 – 6
APTM10DDAM09T3
Delay Times vs Current
Rise and Fall times vs Current
160
120
100
80
60
40
20
0
VDS=66V
140
RG=5Ω
TJ=125°C
td(off)
tf
120
L=100µH
100
VDS=66V
RG=5Ω
80
TJ=125°C
L=100µH
tr
td(on)
60
40
20
0
0
50
100
150
200
250
0
50
100
150
200
250
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
2.5
2
1.5
VDS=66V
ID=139A
TJ=125°C
L=100µH
VDS=66V
RG=5Ω
TJ=125°C
L=100µH
Eoff
Eoff
1
0.5
0
1.5
1
Eon
Eon
0.5
0
0
50
100
150
200
250
0
10
20
30
40
50
60
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
300
1000
100
10
VDS=66V
D=50%
250
200
150
100
50
RG=5Ω
TJ=150°C
TJ=25°C
TJ=125°C
TC=75°C
ZVS
ZCS
Hard
switching
0
1
25
50
75
100
125
150
0.3
0.5
0.7
0.9
1.1
1.3
1.5
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6 – 6
相关型号：
APTM10DSKM09T3
Power Field-Effect Transistor, 139A I(D), 100V, 0.0095ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-25
MICROSEMI
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