APTM120U100D-ALN [ADPOW]
Single switch with Series diodes MOSFET Power Module; 单开关系列二极管， MOSFET功率模块
| 型号： | APTM120U100D-ALN |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Single switch with Series diodes MOSFET Power Module |
| 文件： | 总6页 (文件大小：311K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM120U100D-AlN
VDSS = 1200V
RDSon = 100mΩ max @ Tj = 25°C
ID = 116A @ Tc = 25°C
Single switch
with Series diodes
MOSFET Power Module
Application
•
Zero Current Switching resonant mode
Features
•
Power MOS 7® MOSFETs
-
-
-
-
-
Low RDSon
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
•
•
Kelvin source for easy drive
Very low stray inductance
-
-
Symmetrical design
M5 power connectors
•
•
High level of integration
AlN substrate for improved thermal performance
S
D
Benefits
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
SK
G
Absolute maximum ratings
Symbol
Parameter
Max ratings
1200
116
Unit
VDSS
Drain - Source Breakdown Voltage
V
Tc = 25°C
ID
Continuous Drain Current
A
Tc = 80°C
86
IDM
VGS
RDSon
PD
Pulsed Drain current
464
Gate - Source Voltage
±30
V
mΩ
W
Drain - Source ON Resistance
Maximum Power Dissipation
100
Tc = 25°C
3290
IAR
EAR
EAS
Avalanche current (repetitive and non repetitive)
24
A
Repetitive Avalanche Energy
50
mJ
Single Pulse Avalanche Energy
3200
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1 – 6
APTM120U100D-AlN
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 1mA
VGS = 0V,VDS = 1200V
1200
V
Tj = 25°C
1
IDSS
Zero Gate Voltage Drain Current
mA
VGS = 0V,VDS = 1000V Tj = 125°C
VGS = 10V, ID = 58A
VGS = VDS, ID = 20mA
VGS = ±30 V, VDS = 0V
4
100
5
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
mΩ
V
nA
3
IGS S
Gate – Source Leakage Current
±400
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
28.9
VGS = 0V
VDS = 25V
f = 1MHz
nF
Output Capacitance
4.4
0.8
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
1100
128
716
20
17
245
62
VGS = 10V
VBus = 600V
ID = 116A
nC
Gate – Source Charge
Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ns
ID = 116A
RG =1.2Ω
Tf
Fall Time
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 116A, RG = 1.2Ω
Eon
Turn-on Switching Energy X
5
mJ
mJ
Eoff
Eon
Eoff
Turn-off Switching Energy Y
Turn-on Switching Energy X
Turn-off Switching Energy Y
4.6
9.2
5.6
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 116A, RG = 1.2Ω
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IF(AV)
Maximum Repetitive Reverse Voltage
Maximum Average Forward Current
1200
V
A
50% duty cycle
IF = 180A
Tc = 70°C
180
2
2.3
1.8
2.5
VF
Diode Forward Voltage
IF = 360A
V
IF = 180A
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
IF = 180A
370
500
3.9
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
VR = 800V
di/dt = 800A/µs
IF = 180A
Qrr
µC
VR = 800V
20.7
di/dt = 800A/µs
APT website – http://www.advancedpower.com
2 – 6
APTM120U100D-AlN
Thermal and package characteristics
Symbol Characteristic
Min Typ Max
Unit
°C/W
V
Transistor
0.038
RthJC
Junction to Case
Series diode
0.22
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
2500
-40
-40
-40
3
150
125
100
5
3.5
280
°C
TSTG
TC
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
g
2
Wt
Package Weight
Package outline
APT website – http://www.advancedpower.com
3 – 6
APTM120U100D-AlN
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
280
240
200
160
120
80
320
280
240
200
160
120
80
VDS > ID(on)xRDS (on)MAX
250µs pulse test @ < 0.5 duty cycle
VGS=15, 10V
7V
6V
5.5V
TJ=-55°C
TJ=25°C
5V
40
40
TJ=125°C
4.5V
0
0
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
V
DS, Drain to Source Voltage (V)
V
GS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1.3
1.2
1.1
1
120
100
80
60
40
20
0
Normalized to
GS=10V @ 58A
V
VGS=10V
VGS=20V
0.9
0.8
0
40
80
120 160 200 240
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
4 – 6
APTM120U100D-AlN
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
1.15
1.10
1.05
1.00
0.95
0.90
0.85
VGS=10V
ID=58A
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
100
10
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100µs
limited by RDSon
1ms
10ms
Single pulse
TJ=150°C
1
1200
1000
-50 -25
0
25 50 75 100 125 150
1
10
100
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source Voltage
14
12
10
8
100000
ID=116A
VDS=240V
TJ=25°C
Ciss
VDS=600V
VDS=960V
10000
1000
100
Coss
6
Crss
4
2
0
0
300
600
900
1200 1500
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
APT website – http://www.advancedpower.com
5 – 6
APTM120U100D-AlN
Delay Times vs Current
Rise and Fall times vs Current
100
300
250
200
150
100
50
VDS=800V
RG=1.2Ω
tf
td(off)
80
TJ=125°C
L=100µH
60
VDS=800V
RG=1.2Ω
TJ=125°C
L=100µH
tr
40
20
0
td(on)
0
30
60
90
120
150
180
30
60
90
120
150
180
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
24
20
16
12
8
16
VDS=800V
ID=116A
VDS=800V
RG=1.2Ω
TJ=125°C
Eon
TJ=125°C
L=100µH
12
8
Eoff
L=100µH
Eoff
Eon
4
0
4
30
60
90
120
150
180
0
2
4
6
8
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
100
10
175
150
125
100
75
VDS=800V
D=50%
RG=1.2Ω
ZCS
TJ=150°C
TJ=25°C
TJ=125°C
TC=75°C
Hard
switching
50
25
1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
30
50
70
90
110
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6 – 6
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