JX2N7227 [ADPOW]
JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS; JEDEC挂号N - 通道高电压功率MOSFET
| 型号： | JX2N7227 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS |
| 文件： | 总4页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
D
S
TO-254
G
2N7227 400 Volt 0.315Ω
JX2N7227*
JV2N7227*
TM
POWER MOS IV
*QUALIFIED TO MIL-S-19500/592 31/7/92
JEDEC REGISTERED N -CHANNEL HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
2N7227
400
±20
14
UNIT
VDSS
VGS
Drain-Source Voltage
Volts
Gate-Source Voltage
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
ID
9
d
Amps
Watts
1
IDM
IAR
Pulsed Drain Current
56
14
1
Avalanche Current
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 100°C
Linear Derating Factor
150
PD
60
1.2
W/K
mJ
EAS
EAR
Single Pulse Avalanche Energy
700
Repetitive Avalanche Energy
15
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec.
-55 to 150
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
UNIT
MIN
TYP
MAX
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
400
valanche Rated
Volts
VGS(TH)
Gate Threshold Voltage (VDS = VGS, ID = 250µA)
2
4
Avalanche Rate
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V)
25
IDSS
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
250
±100
IGSS
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
nA
2
ID(ON)
On State Drain Current (VDS > ID(ON) x RDS(ON) Max, VGS = 10V)
Amps
14
2
Drain-Source On-State Resistance (VGS = 10V, ID = 9.0A)
0.315
0.680
0.415
2
Ohms
Drain-Source On-State Resistance (VGS = 10V, ID = 9.0A, TC = 125°C)
RDS(ON)
2
Drain-Source On-State Resistance (VGS = 10V, ID = 14.0A)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
EUROPE
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
2N7227
UNIT
DYNAMIC CHARACTERISTICS
Characteristic
Test Conditions
Symbol
CDC
Ciss
Coss
Crss
Qg
MIN
TYP
12
MAX
24
Drain-to-Case Capacitance
Input Capacitance
f = 1 MHz
2400
385
160
100
12
2800
540
240
150
24
VGS = 0V
VDS = 25V
f = 1 MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
VGS = 10V
Qgs
VDD = 0.5 VDSS
nC
ns
ID = ID [Cont.] @ 25°C
Qgd
td(on)
tr
41
65
12
35
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 2.35Ω
18
190
170
130
td(off)
tf
Turn-off Delay Time
Fall Time
40
13
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
IS
Continuous Source Current (Body Diode)
14
56
Amps
1
ISM
VSD
t rr
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
2
(VGS = 0V, IS = -ID [Cont.])
1.7
Volts
ns
Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)
279
3.6
1200
Q rr
9.0
µC
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
UNIT
RθJC
RθJA
Junction to Case
0.83
31
3
K/W
Junction to Ambient
1
2
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
1.0
D=0.5
0.5
0.2
0.1
0.1
0.05
0.05
0.02
Note:
0.01
t
0.01
SINGLE PULSE
1
t
0.005
2
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
J
DM
θJC
C
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
2N7227
20
16
12
20
16
12
V
=6V, 6.5V & 10V
GS
V
=10V
GS
V
=6.5V
GS
5.5V
5V
5.5V
5V
V
=6V
GS
8
4
0
8
4
0
4.5V
4V
4.5V
4V
0
V
40
80
120
160
200
0
2
4
6
8
10
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
20
16
12
8
1.75
T
= -55°C
J
NORMALIZED TO
V
= 10V @ 0.5 I [Cont.]
D
V
> I (ON) x
R
(ON)MAX.
GS
DS
D
DS
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
T = +125°C
J
1.50
1.25
1.00
0.75
V
=10V
GS
T
= +125°C
= +25°C
J
V
=20V
GS
4
0
T
T
= -55°C
J
J
0
2
4
6
8
0
10
20
30
40
50
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R (ON) vs DRAIN CURRENT
DS
16
1.2
1.1
1.0
0.9
0.8
0.7
12
8
4
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100 125 150
T , CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
1.4
I
= 0.5 I [Cont.]
D
D
V
= 10V
GS
2.0
1.5
1.0
0.5
0.0
1.2
1.0
0.8
0.6
0.4
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
2N7227
60
7,000
5,000
100µS
OPERATION HERE
LIMITED BY R (ON)
DS
C
C
iss
1mS
10
5
10mS
1,000
500
oss
100mS
DC
1
C
rss
0.5
T
T
=+25°C
=+150°C
C
J
SINGLE PULSE
100
70
.1
1
V
5
10
50 100
400
0.1
0.5
1
5
10
50
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
16
12
8
100
I
= I [Cont.]
D
D
V
=80V
50
20
DS
=200V
V
DS
T
=+150°C
T =+25°C
J
V
=320V
J
DS
10
5
4
2
1
0
0
40
g
g
80
120
160
200
0
V
.5
1.0
1.5
2.0
Q , TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-254AA Package Outline
13.84 (.545)
13.59 (.535)
6.91 (.272)
6.81 (.268)
1.27 (.050)
1.02 (.040)
3.78 (.149)
3.53 (.139)
Dia.
20.32 (.800)
20.07 (.790)
17.40 (.685)
16.89 (.665)
13.84 (.545)
13.59 (.535)
31.37 (1.235)
30.35 (1.195)
Drain
Source
Gate
1.14 (.045) Dia. Typ.
.89 (.035) 3 Leads
3.81 (.150) BSC
6.60 (.260)
6.32 (.249)
3.81 (.150) BSC
Dimensions in Millimeters and (Inches)
相关型号：
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