SRF4427 [ADPOW]
RF AND MICROWAVE DISCRETE LOW POWER TRANSISTORS GENERAL RF AMPLIFIER APPLICATIONS; 射频和微波离散小功率三极管一般的RF放大器应用
| 型号： | SRF4427 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | RF AND MICROWAVE DISCRETE LOW POWER TRANSISTORS GENERAL RF AMPLIFIER APPLICATIONS |
| 文件： | 总3页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
SRF4427
SRF4427G
* G Denotes RoHS Compliant, Pb Free Terminal Finish
RF AND MICROWAVE DISCRETE LOW
POWER TRANSISTORS
GENERAL RF AMPLIFIER APPLICATIONS
Features
·
·
·
·
Low Cost SO-8 Plastic Surface Mount Package.
S-Parameter Characterization
Tape and Reel Packaging Options Available
Maximum Available Gain – 20dB(typ) @ 200MHz
DESCRIPTION:
Designed for general-purpose RF amplifier applications, such as pre-drivers and oscillators.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Value
18
Unit
Vdc
Vdc
Vdc
mA
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
36
4.0
400
Thermal Data
1.5
Watts
mW/ ºC
ºC
Total Device Dissipation @ TC = 25ºC
Derate above 25ºC
P
D
12.5
TSTG
Storage Temperature
-65 to + 150
R
125
ºC/W
Thermal Resistance, Junction to Ambient
qJA
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
SRF4427
SRF4427G
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC (off)
Value
Symbol
BVCEO
BVCES
BVEBO
ICBO
Test Conditions
Units
Min.
18
36
4
Typ.
Max.
Collector-Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
-
Vdc
Vdc
Vdc
uA
-
-
-
-
Collector-Base Breakdown Voltage
(IC = 5 mAdc, IE = 0)
-
-
Emitter-Base Breakdown Voltage
(IE = 5 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 12.5 Vdc)
800
-
STATIC (on)
Value
Typ.
Symbol
Test Conditions
Units
Min.
20
Max.
200
DC Current Gain
HFE
(VCE = 5 Vdc, IC = 150 mAdc)
DYNAMIC
Value
Typ.
Symbol
Test Conditions
Units
Min.
Max.
3.4
Current-Gain Bandwidth Product
(IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz)
Output Capacitance
FTAU
GHz
GHz
1.3
COB
(VCB = 12 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL
Value
Test Conditions
Symbol
Unit
Min.
Typ.
Max.
Power Gain
G
PE
VCE = 12 Vdc, f = 175 MHz, Pin = 15 mW
Insertion Gain
-
-
dB
dB
17
12
18
|S21|2
VCE = 12 Vdc , IC = 50 mAdc, f = 200 MHz
14
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
SRF4427
SRF4427G
PACKAGE MECHANICAL DATA
PIN 1. EMITTER
2. COLLECTOR
3. COLLECTOR
4. EMITTER
5. EMITTER
6. BASE
7. BASE
8. EMITTER
5.
4.
8.
1.
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
相关型号：
©2020 ICPDF网 联系我们和版权申明