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元器件品牌
APT1001R1BN
[ADPOW]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS; N沟道增强型高压功率MOSFET
元器件型号：
APT1001R1BN
生产厂家：
ADVANCED POWER TECHNOLOGY
描述和应用：
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N沟道增强型高压功率MOSFET
晶体 晶体管 功率场效应晶体管 开关 脉冲 高压 局域网 高电压电源
PDF文件：
总4页 (文件大小：56K)
下载文档：
下载PDF数据表文档文件
型号参数：APT1001R1BN参数
查看货源
APT1001R1BN-BUTT
暂无描述
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ADPOW
APT1001R1BN-GULLWING
Power Field-Effect Transistor, 10.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN
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ADPOW
APT1001R1BNR
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-247AD
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ETC
APT1001R1BNR-GULLWING
10.5A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
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MICROSEMI
APT1001R1BVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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43
ADPOW
APT1001R1DN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
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21
ETC
APT1001R1HN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
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20
ETC
APT1001R1HVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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32
ADPOW
APT1001R1SN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB
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12
ETC
APT1001R1SN
10.5A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, D3PAK-3
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0
MICROSEMI
APT1001R2AN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9A I(D) | TO-3
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18
ETC
APT1001R2BN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10A I(D) | TO-247AD
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20
ETC
APT1001R2HN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9A I(D) | TO-247HERM
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17
ETC
APT1001R3AN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 8.5A I(D) | TO-3
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10
ETC
APT1001R3BN
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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ADPOW
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