关闭背景特效

APT1001R1HVR [ADPOW]

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.; 功率MOS V是新一代高压N沟道增强型功率MOSFET 。

APT1001R1HVR


元器件型号：	APT1001R1HVR
生产厂家：	ADVANCED POWER TECHNOLOGY
描述和应用：	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 功率MOS V是新一代高压N沟道增强型功率MOSFET 。高压
PDF文件：	总4页 (文件大小：71K)
下载文档：	下载PDF数据表文档文件
型号参数：APT1001R1HVR参数

APT1001R1SN

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB

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12 ETC

APT1001R1SN

10.5A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, D3PAK-3

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0 MICROSEMI

APT1001R2AN

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9A I(D) | TO-3

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18 ETC

APT1001R2BN

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10A I(D) | TO-247AD

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20 ETC

APT1001R2HN

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9A I(D) | TO-247HERM

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17 ETC

APT1001R3AN

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 8.5A I(D) | TO-3

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10 ETC

APT1001R3BN

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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27 ADPOW

APT1001R3BN-BUTT

暂无描述

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0 ADPOW

APT1001R3HN

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9A I(D) | TO-258ISO

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14 ETC

APT1001R6BFLL

POWER MOS 7 R FREDFET

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29 ADPOW

APT1001R6BFLLG

Power Field-Effect Transistor, 8A I(D), 1000V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

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0 MICROSEMI

APT1001R6BLL

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 MICROSEMI

APT1001R6BLL

Power Field-Effect Transistor, 8A I(D), 1000V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

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0 ADPOW

APT1001R6BN

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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47 ADPOW

APT1001R6BN-BUTT

Power Field-Effect Transistor, 8A I(D), 1000V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

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0 ADPOW

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