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元器件品牌
APT1001R3BN
[ADPOW]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS; N沟道增强型高压功率MOSFET
元器件型号:
APT1001R3BN
生产厂家:
ADVANCED POWER TECHNOLOGY
描述和应用:
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N沟道增强型高压功率MOSFET
晶体 晶体管 功率场效应晶体管 开关 脉冲 高压 局域网 高电压电源
PDF文件:
总4页 (文件大小:56K)
下载文档:
下载PDF数据表文档文件
型号参数:APT1001R3BN参数
查看货源
APT1001R3BN-BUTT
暂无描述
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ADPOW
APT1001R3HN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9A I(D) | TO-258ISO
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14
ETC
APT1001R6BFLL
POWER MOS 7 R FREDFET
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156
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29
ADPOW
APT1001R6BFLLG
Power Field-Effect Transistor, 8A I(D), 1000V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
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0
MICROSEMI
APT1001R6BLL
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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156
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0
MICROSEMI
APT1001R6BLL
Power Field-Effect Transistor, 8A I(D), 1000V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
Warning
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ADPOW
APT1001R6BN
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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47
ADPOW
APT1001R6BN-BUTT
Power Field-Effect Transistor, 8A I(D), 1000V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
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156
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0
ADPOW
APT1001R6BN-GULLWING
8A, 1000V, 1.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
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156
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0
MICROSEMI
APT1001R6SFLL
POWER MOS 7 R FREDFET
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156
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32
ADPOW
APT1001R6SFLLG
Power Field-Effect Transistor, 8A I(D), 1000V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3
Warning
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156
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0
MICROSEMI
APT1001R6SLL
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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156
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0
MICROSEMI
APT1001R6SLL
Power Field-Effect Transistor, 8A I(D), 1000V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-2
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156
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0
ADPOW
APT1001RAN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
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20
ETC
APT1001RAN
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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156
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7
ADPOW
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